Abstract:
Examples of methods and systems for laser processing of materials are disclosed. Methods and systems for singulation of a wafer comprising a coated substrate can utilize a laser outputting light that has a wavelength that is transparent to the wafer substrate but which may not be transparent to the coating layer(s). Using techniques for managing fluence and focal condition of the laser beam, the coating layer(s) and the substrate material can be processed through ablation and internal modification, respectively. The internal modification can result in die separation.
Abstract:
Chirped pulse amplification (CPA) systems configured to generate and amplify multi-pulses are described. The nonlinear interaction of pulses can generate a multiple pulse pack with a dense time separation between pulses. Reducing or eliminating the nonlinear interaction can be provided by spectrally and/or temporally splitting pulses in the chirped amplification system.
Abstract:
Various embodiments may be used for laser-based modification of target material of a workpiece while advantageously achieving improvements in processing throughput and/or quality. Embodiments of a method of processing may include focusing and directing laser pulses to a region of the workpiece at a pulse repetition rate sufficiently high so that material is efficiently removed from the region and a quantity of unwanted material within the region, proximate to the region, or both is reduced relative to a quantity obtainable at a lower repetition rate. Embodiments of an ultrashort pulse laser system may include a fiber amplifier or fiber laser. Various embodiments are suitable for at least one of dicing, cutting, scribing, and forming features on or within a semiconductor substrate. Workpiece materials may include metals, inorganic or organic dielectrics, or any material to be micromachined with femtosecond, picosecond, and/or nanosecond pulses.
Abstract:
A method of forming patterns on transparent substrates using a pulsed laser is disclosed. Various embodiments include an ultrashort pulsed laser, a substrate that is transparent to the laser wavelength, and a target plate. The laser beam is guided through the transparent substrate and focused on the target surface. The target material is ablated by the laser and is deposited on the opposite substrate surface. A pattern, for example a gray scale image, is formed by scanning the laser beam relative to the target. Variations of the laser beam scan speed and scan line density control the material deposition and change the optical properties of the deposited patterns, creating a visual effect of gray scale. In some embodiments patterns may be formed on a portion of a microelectronic device during a fabrication process. In some embodiments high repetition rate picoseconds and nanosecond sources are configured to produce the patterns.
Abstract:
Examples of methods and systems for laser processing of materials are disclosed. Methods and systems for singulation of a wafer comprising a coated substrate can utilize a laser outputting light that has a wavelength that is transparent to the wafer substrate but which may not be transparent to the coating layer(s). Using techniques for managing fluence and focal condition of the laser beam, the coating layer(s) and the substrate material can be processed through ablation and internal modification, respectively. The internal modification can result in die separation.
Abstract:
Examples of methods and systems for laser processing of materials are disclosed. Methods and systems for singulation of a wafer comprising a coated substrate can utilize a laser outputting light that has a wavelength that is transparent to the wafer substrate but which may not be transparent to the coating layer(s). Using techniques for managing fluence and focal condition of the laser beam, the coating layer(s) and the substrate material can be processed through ablation and internal modification, respectively. The internal modification can result in die separation.
Abstract:
In at least one embodiment a laser system includes a fiber laser source, a polarization controller and a wavelength converter. The relative power distribution between a pump wavelength and a signal wavelength is controllable using the polarization controller. An optional phase compensator is used to control polarization state of the output laser beam. In various embodiments the relative power distribution among multiple wavelengths may be controlled over a range of at least about 100:1.