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公开(公告)号：US20230191534A1
公开(公告)日：2023-06-22
申请号：US17953338
申请日：2022-09-27
Applicant: Industrial Technology Research Institute
Inventor： Chih-Chieh Chen , Kao-Der Chang , Chih-Chiang Weng , Yo-Sung Lee
IPC: B23K26/352 , B23K26/03 , B23K26/073 , B23K26/14 , B23K26/08
CPC classification number: B23K26/352 , B23K26/032 , B23K26/073 , B23K26/14 , B23K26/0823
Abstract: A surface processing equipment using an energy beam including a measuring device, a gas source, an energy beam supply device, a multi-axis platform, and a processing device is provided. The measuring device measures a workpiece to obtain surface form information. The energy beam supply device receives a processing gas to form an energy beam. The energy beam supply device includes a rotating sleeve. Openings are on a bottom surface of the rotating sleeve. The rotating sleeve rotates along a rotation axis and supplies the energy beam from one of the openings to the workpiece. The processing device controls the gas source, the energy beam supply device, and the multi-axis platform according to the surface form information. Distances from each opening to the rotation axis are all different. The energy beam is formed into a beam shape or rings having different radii via a rotation of the energy beam supply device.
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公开(公告)号：US09363881B2
公开(公告)日：2016-06-07
申请号：US14547149
申请日：2014-11-19
Applicant: Industrial Technology Research Institute
Inventor： Chih-Chiang Weng , Jui-Mei Hsu , Chen-Chung Du , Chen-Der Tsai
CPC classification number: H05H1/46 , H01J37/32009 , H01J37/32348 , H01J37/32541 , H01J37/32568 , H05H1/2406 , H05H2001/2412
Abstract: A plasma device includes a dielectric barrier, a first electrode structure, a second electrode structure, and a third electrode structure. The dielectric barrier has an upstream terminal and a downstream terminal and defines a space, in which the first electrode structure is disposed. A gap with multiple widths is formed between the first electrode structure and the dielectric barrier. The dielectric barrier is located between the first electrode structure and the second electrode structure. The second electrode structure includes electrode blocks sequentially arranged from the upstream terminal to the downstream terminal. The dielectric barrier, the first electrode structure, and the second electrode structure are located on the same side of the third electrode structure located at the downstream terminal. A minimum distance between the electrode blocks and the third electrode structure is not less than a distance between the first electrode structure and the third electrode structure.
Abstract translation: 等离子体装置包括介电阻挡层，第一电极结构，第二电极结构和第三电极结构。 电介质阻挡层具有上游端子和下游端子，并且限定了设置有第一电极结构的空间。 在第一电极结构和电介质屏障之间形成具有多个宽度的间隙。 电介质阻挡层位于第一电极结构和第二电极结构之间。 第二电极结构包括从上游端子到下游端子顺序排列的电极块。 电介质势垒，第一电极结构和第二电极结构位于位于下游端子处的第三电极结构的同一侧。 电极块和第三电极结构之间的最小距离不小于第一电极结构和第三电极结构之间的距离。
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公开(公告)号：US20150156857A1
公开(公告)日：2015-06-04
申请号：US14547149
申请日：2014-11-19
Applicant: Industrial Technology Research Institute
Inventor： Chih-Chiang Weng , Jui-Mei Hsu , Chen-Chung Du , Chen-Der Tsai
CPC classification number: H05H1/46 , H01J37/32009 , H01J37/32348 , H01J37/32541 , H01J37/32568 , H05H1/2406 , H05H2001/2412
Abstract: A plasma device includes a dielectric barrier, a first electrode structure, a second electrode structure, and a third electrode structure. The dielectric barrier has an upstream terminal and a downstream terminal and defines a space, in which the first electrode structure is disposed. A gap with multiple widths is formed between the first electrode structure and the dielectric barrier. The dielectric barrier is located between the first electrode structure and the second electrode structure. The second electrode structure includes electrode blocks sequentially arranged from the upstream terminal to the downstream terminal. The dielectric barrier, the first electrode structure, and the second electrode structure are located on the same side of the third electrode structure located at the downstream terminal. A minimum distance between the electrode blocks and the third electrode structure is not less than a distance between the first electrode structure and the third electrode structure.
Abstract translation: 等离子体装置包括介电阻挡层，第一电极结构，第二电极结构和第三电极结构。 电介质阻挡层具有上游端子和下游端子，并且限定了设置有第一电极结构的空间。 在第一电极结构和电介质屏障之间形成具有多个宽度的间隙。 电介质阻挡层位于第一电极结构和第二电极结构之间。 第二电极结构包括从上游端子到下游端子顺序排列的电极块。 电介质势垒，第一电极结构和第二电极结构位于位于下游端子处的第三电极结构的同一侧。 电极块和第三电极结构之间的最小距离不小于第一电极结构和第三电极结构之间的距离。
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公开(公告)号：US20250006475A1
公开(公告)日：2025-01-02
申请号：US18884124
申请日：2024-09-13
Applicant: Industrial Technology Research Institute
Inventor： Chih-Chieh Chen , Chih-Chiang Weng , Yo-Sung Lee
Abstract: A surface processing equipment using energy beam including a multi-axis platform, a surface profile measuring device, an energy beam generator and a computing device is provided. The multi-axis platform is configured to carry a workpiece and move the workpiece to the first position or the second position. The surface profile measuring device has a working area, and the first position is located on the working area. The surface profile measuring device is configured to measure the workpiece to obtain surface profile. The energy beam generator is configured to provide an energy beam to the workpiece for processing, and the second position is located on a transmission path of the energy beam. The computing device is connected to the surface profile measuring device and the energy beam generator. The computing device adjusts the energy beam generator according to the error profile.
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Patent Agency Ranking
公开(公告)号：US12154768B2
公开(公告)日：2024-11-26
申请号：US17134261
申请日：2020-12-26
Applicant: Industrial Technology Research Institute
Inventor： Chih-Chieh Chen , Chih-Chiang Weng , Yo-Sung Lee
Abstract: A surface processing equipment using energy beam including a multi-axis platform, a surface profile measuring device, an energy beam generator and a computing device is provided. The multi-axis platform is configured to carry a workpiece and move the workpiece to the first position or the second position. The surface profile measuring device has a working area, and the first position is located on the working area. The surface profile measuring device is configured to measure the workpiece to obtain surface profile. The energy beam generator is configured to provide an energy beam to the workpiece for processing, and the second position is located on a transmission path of the energy beam. The computing device is connected to the surface profile measuring device and the energy beam generator. The computing device adjusts the energy beam generator according to the error profile.
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公开(公告)号：US12150234B2
公开(公告)日：2024-11-19
申请号：US17525977
申请日：2021-11-15
Applicant: Industrial Technology Research Institute
Inventor： Chih-Chiang Weng , Yo-Sung Lee
Abstract: A fluid introduction module for plasma system is adapted for being disposed in a plasma system and includes a rotating nozzle and a precursor supply device. The rotating nozzle includes a main flow channel, a plasma outlet located at an end of the main flow channel, a mixing flow channel that penetrates a side wall of the rotating nozzle and communicates with the main flow channel, an independent flow channel separated from the main flow channel, and a precursor independent outlet located at an end of the independent flow channel. The precursor supply device includes a fixed housing and a rotating bearing. The fixed housing is sleeved outside the rotating nozzle and includes a precursor inlet selectively communicating with either the mixing flow channel or the independent flow channel. The rotating bearing is disposed between the rotating nozzle and the fixed housing.
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公开(公告)号：US20230112886A1
公开(公告)日：2023-04-13
申请号：US17525977
申请日：2021-11-15
Applicant: Industrial Technology Research Institute
Inventor： Chih-Chiang Weng , Yo-Sung Lee
IPC: H05H1/24
Abstract: A fluid introduction module for plasma system is adapted for being disposed in a plasma system and includes a rotating nozzle and a precursor supply device. The rotating nozzle includes a main flow channel, a plasma outlet located at an end of the main flow channel, a mixing flow channel that penetrates a side wall of the rotating nozzle and communicates with the main flow channel, an independent flow channel separated from the main flow channel, and a precursor independent outlet located at an end of the independent flow channel. The precursor supply device includes a fixed housing and a rotating bearing. The fixed housing is sleeved outside the rotating nozzle and includes a precursor inlet selectively communicating with either the mixing flow channel or the independent flow channel. The rotating bearing is disposed between the rotating nozzle and the fixed housing.
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公开(公告)号：US20220208533A1
公开(公告)日：2022-06-30
申请号：US17134261
申请日：2020-12-26
Applicant: Industrial Technology Research Institute
Inventor： Chih-Chieh Chen , Chih-Chiang Weng , Yo-Sung Lee
Abstract: A surface processing equipment using energy beam including a multi-axis platform, a surface profile measuring device, an energy beam generator and a computing device is provided. The multi-axis platform is configured to carry a workpiece and move the workpiece to the first position or the second position. The surface profile measuring device has a working area, and the first position is located on the working area. The surface profile measuring device is configured to measure the workpiece to obtain surface profile. The energy beam generator is configured to provide an energy beam to the workpiece for processing, and the second position is located on a transmission path of the energy beam. The computing device is connected to the surface profile measuring device and the energy beam generator. The computing device adjusts the energy beam generator according to the error profile.
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公开(公告)号：US09953809B2
公开(公告)日：2018-04-24
申请号：US14972985
申请日：2015-12-17
Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Inventor： Chih-Chiang Weng , Chen-Der Tsai , Yu-Ming Wang
CPC classification number: H01J37/32394 , B65D25/14 , C23C16/045 , C23C16/26 , C23C16/507 , H01J37/3244 , H01J37/32467 , H01J37/32513 , H01J37/32541 , H01J37/32568 , H01J37/32577 , H01J37/32715 , H01J37/32743 , H01J37/32834 , H01J2237/3321
Abstract: An apparatus for coating a film in a container and a method for coating a film are provided. The apparatus includes a cylindrical housing having a containing space penetrating through both ends thereof; a first arc-shaped electrode and a second arc-shaped electrode surrounding and covering an outer side of the cylindrical housing with a gap formed between the first and second arc-shaped electrodes such that the first arc-shaped electrode is free from electrically connected to the second arc-shaped electrode; a first conductive ring and a second conductive ring surrounding on the first and second arc-shaped electrodes, respectively; an upper supporting seat and a lower supporting seat disposed at the both ends of the cylindrical housing, respectively, to form a sealed environment for the containing space; and a valve component furnished at the upper supporting seat and inserted into the container for providing a processing gas in a film-coating process.
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