公开(公告)号：US20170249250A1

公开(公告)日：2017-08-31

申请号：US15457847

申请日：2017-03-13

Applicant: Intel Corporation

Inventor： Raj K. RAMANUJAN ,  Rajat AGARWAL ,  Kai CHENG ,  Taarinya POLEPEDDI ,  Camille C. RAAD ,  David J. ZIMMERMAN ,  Muthukumar P. SWAMINATHAN ,  Dimitrios ZIAKAS ,  Mohan J. KUMAR ,  Bassam N. COURY ,  Glenn J. HINTON

IPC: G06F12/0811 ,  G11C11/406 ,  G06F12/0895 ,  G06F12/0897 ,  G11C14/00

CPC classification number: G06F12/0811 ,  G06F12/0895 ,  G06F12/0897 ,  G06F2212/2024 ,  G06F2212/205 ,  G11C11/40615 ,  G11C14/009 ,  Y02D10/13

Abstract: A system and method are described for integrating a memory and storage hierarchy including a non-volatile memory tier within a computer system. In one embodiment, PCMS memory devices are used as one tier in the hierarchy, sometimes referred to as “far memory.” Higher performance memory devices such as DRAM placed in front of the far memory and are used to mask some of the performance limitations of the far memory. These higher performance memory devices are referred to as “near memory.”

公开(公告)号：US20210056035A1

公开(公告)日：2021-02-25

申请号：US17009245

申请日：2020-09-01

Applicant: Intel Corporation

Inventor： Raj K. RAMANUJAN ,  Glenn J. HINTON ,  David J. ZIMMERMAN

IPC: G06F12/0891 ,  G06F12/0895 ,  G06F1/3234 ,  G06F1/3225 ,  G06F12/0868 ,  G06F12/0873 ,  G06F12/0804 ,  G06F12/0864

Abstract: A system and method are described for flushing a specified region of a memory side cache (MSC) within a multi-level memory hierarchy. For example, a computer system according to one embodiment comprises: a memory subsystem comprised of a non-volatile system memory and a volatile memory side cache (MSC) for caching portions of the non-volatile system memory; and a flush engine for flushing a specified region of the MSC to the non-volatile system memory in response to a deactivation condition associated with the specified region of the MSC.

公开(公告)号：US20190220406A1

公开(公告)日：2019-07-18

申请号：US16363992

申请日：2019-03-25

Applicant: Intel Corporation

Inventor： Raj K. RAMANUJAN ,  Rajat AGARWAL ,  Kai CHENG ,  Taarinya POLEPEDDI ,  Camille C. RAAD ,  David J. ZIMMERMAN ,  Muthukumar P. SWAMINATHAN ,  Dimitrios ZIAKAS ,  Mohan J. KUMAR ,  Bassam N. COURY ,  Glenn J. HINTON

IPC: G06F12/0811 ,  G06F12/0895 ,  G06F12/0897 ,  G11C11/406 ,  G11C14/00

Abstract: A system and method are described for integrating a memory and storage hierarchy including a non-volatile memory tier within a computer system. In one embodiment, PCMS memory devices are used as one tier in the hierarchy, sometimes referred to as “far memory.” Higher performance memory devices such as DRAM placed in front of the far memory and are used to mask some of the performance limitations of the far memory. These higher performance memory devices are referred to as “near memory.”

公开(公告)号：US20150187436A1

公开(公告)日：2015-07-02

申请号：US14320164

申请日：2014-06-30

Applicant: INTEL CORPORATION

Inventor： Bruce QUERBACH ,  William K. LUI ,  David G. ELLIS ,  David J. ZIMMERMAN ,  Theodore Z. SCHOENBORN ,  Christopher W. HAMPSON ,  Ifar WAN ,  Yulan ZHANG

IPC: G11C29/10 ,  G06F11/27 ,  G06F11/263

CPC classification number: G11C29/38 ,  G06F11/263 ,  G06F11/27 ,  G11C11/406 ,  G11C29/10 ,  G11C29/1201 ,  G11C29/16 ,  G11C29/18 ,  G11C29/20 ,  G11C29/36 ,  G11C29/4401 ,  G11C29/72 ,  G11C29/78 ,  G11C29/783 ,  G11C2029/1202 ,  G11C2029/1204 ,  G11C2029/1206 ,  G11C2029/1208 ,  G11C2029/3602 ,  G11C2029/4402

Abstract: In accordance with the present description, a device includes an internal defect detection and repair circuit which includes a self-test logic circuit built in within the device and a self-repair logic circuit also built in within the device. In one embodiment, the built in self-test logic circuit may be configured to automatically identify defective memory cells in a memory. Upon identifying one or more defective memory cells, the built in self-repair logic circuit may be configured to automatically repair the defective memory cells by replacing defective cells with spare cells within the memory. In one embodiment, data patterns are generated as a function of memory addresses and periodic address offsets. Other aspects are described herein.

Abstract translation: 根据本说明书，装置包括内部缺陷检测和修复电路，其包括内置于装置内的自检逻辑电路和内置在装置内的自修复逻辑电路。 在一个实施例中，内置自检逻辑电路可以被配置为自动识别存储器中的有缺陷的存储器单元。 在识别一个或多个有缺陷的存储器单元时，内置的自修复逻辑电路可以被配置为通过用存储器内的备用单元替换有缺陷的单元来自动修复有缺陷的存储器单元。 在一个实施例中，作为存储器地址和周期性地址偏移的函数产生数据模式。 本文描述了其它方面。

公开(公告)号：US20190057737A1

公开(公告)日：2019-02-21

申请号：US16035443

申请日：2018-07-13

Applicant: Intel Corporation

Inventor： Shekoufeh QAWAMI ,  Rajesh SUNDARAM ,  David J. ZIMMERMAN ,  Blaise FANNING

IPC: G11C13/00 ,  G06F12/02 ,  G06F1/32 ,  G06F9/30 ,  G11C16/06

Abstract: Examples are disclosed for adaptive configuration of non-volatile memory. The examples include a mode register configured to include default and updated values to indicate one or more configurations of the non-volatile memory. The examples may also include discoverable capabilities maintained in a configuration table that may indicate memory address lengths and/or operating power states.

公开(公告)号：US20170084351A1

公开(公告)日：2017-03-23

申请号：US15368402

申请日：2016-12-02

Applicant: INTEL CORPORATION

Inventor： Bruce QUERBACH ,  William K. LUI ,  David G. ELLIS ,  David J. ZIMMERMAN ,  Theodore Z. SCHOENBORN ,  Christopher W. HAMPSON ,  Ifar WAN ,  Yulan ZHANG

IPC: G11C29/38 ,  G11C29/44 ,  G11C29/36

CPC classification number: G11C29/38 ,  G06F11/263 ,  G06F11/27 ,  G11C11/406 ,  G11C29/10 ,  G11C29/1201 ,  G11C29/16 ,  G11C29/18 ,  G11C29/20 ,  G11C29/36 ,  G11C29/4401 ,  G11C29/72 ,  G11C29/78 ,  G11C29/783 ,  G11C2029/1202 ,  G11C2029/1204 ,  G11C2029/1206 ,  G11C2029/1208 ,  G11C2029/3602 ,  G11C2029/4402

Abstract: In accordance with the present description, a device includes an internal defect detection and repair circuit which includes a self-test logic circuit built in within the device and a self-repair logic circuit also built in within the device. In one embodiment, the built in self-test logic circuit may be configured to automatically identify defective memory cells in a memory. Upon identifying one or more defective memory cells, the built in self-repair logic circuit may be configured to automatically repair the defective memory cells by replacing defective cells with spare cells within the memory. In one embodiment, data patterns are generated as a function of memory addresses and periodic address offsets. Other aspects are described herein.