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    Fine alignment system for electron beam exposure system
    4.
    发明授权
    Fine alignment system for electron beam exposure system 有权

    公开(公告)号：US10236161B2

    公开(公告)日：2019-03-19

    申请号：US15555447

    申请日：2015-09-18

    申请人： Intel Corporation

    发明人： Yan A. Borodovsky

    IPC分类号： G06K9/00 ,  H01J37/304 ,  H01L21/027 ,  H01L21/033 ,  H01J37/317 ,  H01L21/311 ,  H01L23/544 ,  H01J37/04 ,  H01J37/09 ,  H01J37/20 ,  H01J37/244

    摘要： Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a method of fine alignment of an e-beam tool includes projecting an electron image of a plurality of apertures of an e-beam column over an X-direction alignment feature of a wafer while moving the wafer along the Y-direction. The method also includes detecting a time-resolved back-scattered electron (BSE) detection response waveform during the projecting. The method also includes determining an X-position of every edge of every feature of the X-direction alignment feature by calculating a derivative of the BSE detection response waveform. The method also includes, subsequent to determining an X-position of every edge of every feature of the X-direction alignment feature, adjusting an alignment of the e-beam column to the wafer.

    Ebeam universal cutter
    5.
    发明授权
    Ebeam universal cutter 有权

    公开(公告)号：US10216087B2

    公开(公告)日：2019-02-26

    申请号：US15122622

    申请日：2014-12-19

    申请人： Intel Corporation

    发明人： Yan A. Borodovsky ,  Donald W. Nelson ,  Mark C. Phillips

    IPC分类号： G03F7/20 ,  H01L21/027 ,  H01J37/317 ,  H01L21/311

    摘要： Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a blanker aperture array (BAA) for an e-beam tool includes a first column of openings along a first direction. The BAA also includes a second column of openings along the first direction and staggered from the first column of openings. The first and second columns of openings together form an array having a pitch in the first direction. A scan direction of the BAA is along a second direction, orthogonal to the first direction. The pitch of the array corresponds to half of a minimal pitch layout of a target pattern of lines for orientation parallel with the second direction.

    Ebeam align on the fly
    9.
    发明授权
    Ebeam align on the fly 有权

    公开(公告)号：US10290528B2

    公开(公告)日：2019-05-14

    申请号：US15122792

    申请日：2014-12-22

    申请人： Intel Corporation

    发明人： Yan A. Borodovsky ,  Donald W. Nelson ,  Mark C. Phillips

    IPC分类号： G03F9/00 ,  H01L21/68 ,  H01L21/027 ,  H01J37/317 ,  H01L21/311

    摘要： Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. In an example, a method of real-time alignment of a wafer situated on a stage of an e-beam tool involves collecting backscattered electrons from an underlying patterned feature of the wafer while an e-beam column of the e-beam tool writes during scanning of the stage. The collecting is performed by an electron detector placed at the e-beam column bottom. The method also involves performing linear corrections of an alignment of the stage relative to the e-beam column based on the collecting.