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公开(公告)号：US20240237544A1
公开(公告)日：2024-07-11
申请号：US18150816
申请日：2023-01-06
发明人： Kevin W. Brew , Ching-Tzu Chen , Timothy Mathew Philip , JIN PING HAN , Injo Ok
IPC分类号： H10N50/10 , H01L23/528 , H10N50/01
CPC分类号： H10N50/10 , H01L23/5283 , H10N50/01
摘要： Embodiments of present invention provide a vertical magnetic tunnel junction (MTJ) structure. The structure includes an L-shaped MTJ stack including an L-shaped reference layer conformally on an L-shaped performance enhancing layer; an L-shaped tunnel barrier layer conformally on the L-shaped reference layer; and an L-shaped free layer conformally on the L-shaped tunnel barrier layer, where a vertical portion of the L-shaped MTJ stack is adjacent to a sidewall of a metal stud, the metal stud being directly on top of a metal wire in a dielectric layer. The structure further includes a first and a second electrode contacting a horizontal portion and a vertical portion of the L-shaped MTJ stack. A method of forming the same is also provided.
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公开(公告)号：US20240074336A1
公开(公告)日：2024-02-29
申请号：US17894549
申请日：2022-08-24
发明人： Injo Ok , Timothy Mathew Philip , Jin Ping Han , Ching-Tzu Chen , Kevin W. Brew , Lili Cheng
IPC分类号： H01L45/00
CPC分类号： H01L45/126 , H01L45/06 , H01L45/1233 , H01L45/1675
摘要： A memory device and method of forming a projection liner under a mushroom phase change memory device with sidewall electrode process scheme to provide self-aligned patterning of resistive projection liner during sidewall electrode formation.
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公开(公告)号：US20230189667A1
公开(公告)日：2023-06-15
申请号：US17547152
申请日：2021-12-09
发明人： Kangguo Cheng , Juntao Li , Ching-Tzu Chen , Carl Radens
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/16 , H01L45/126 , H01L45/144
摘要： A phase change memory includes a phase change structure. There is a heater coupled to a first surface of the phase change structure. A first electrode is coupled to a second surface of the phase change structure. A second electrode coupled to a second surface of the heater. A third electrode is connected to a first lateral end of the phase change structure and a fourth electrode connected to a second lateral end of the phase change structure.
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公开(公告)号：US20160351679A1
公开(公告)日：2016-12-01
申请号：US15235161
申请日：2016-08-12
IPC分类号： H01L29/66 , H01L21/02 , H01L51/00 , H01L29/16 , H01L29/24 , H01L29/786 , H01L21/283
CPC分类号： H01L51/0541 , G01N27/414 , G01N27/4141 , G01N27/4146 , H01L21/02527 , H01L21/0254 , H01L21/02568 , H01L21/02606 , H01L21/043 , H01L21/283 , H01L21/441 , H01L21/7682 , H01L23/53276 , H01L28/60 , H01L29/0665 , H01L29/0673 , H01L29/1606 , H01L29/2003 , H01L29/24 , H01L29/66045 , H01L29/66969 , H01L29/778 , H01L29/78684 , H01L29/78696 , H01L43/08 , H01L51/0048 , H01L51/0558 , H01L2221/1094
摘要： Embodiments of the invention include a method for fabricating a semiconductor device and the resulting structure. A substrate is provided. A plurality of metal portions are formed on the substrate, wherein the plurality of metal portions are arranged such that areas of the substrate remain exposed. A thin film layer is deposited on the plurality of metal portions and the exposed areas of the substrate. A dielectric layer is deposited, wherein the dielectric layer is in contact with portions of the thin film layer on the plurality of metal portions, and wherein the dielectric layer is not in contact with portions of the thin film layer on the exposed areas of the substrate such that one or more enclosed spaces are present between the thin film layer on the exposed areas of the substrate and the dielectric layer.
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公开(公告)号：US20140151770A1
公开(公告)日：2014-06-05
申请号：US13689857
申请日：2012-11-30
发明人： Ching-Tzu Chen , Marcin J. Gajek , Simone Raoux
CPC分类号： H01L43/12 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C23C14/024 , C23C14/08 , C23C14/225 , C23C14/35 , H01L29/1606 , H01L29/40111 , H01L29/4908 , H01L29/516 , H01L29/66075 , H01L29/66984 , H01L29/78618 , H01L29/78684
摘要： A method for depositing a material on a graphene layer includes arranging a graphene layer having an exposed substantially planar surface proximate to a magnetron assembly that is operative to emit a plasma plume substantially along a first line, wherein the exposed planar surface of the graphene layer is arranged at an angle that is non-orthogonal to the first line where the first line intersects the exposed planar surface; and emitting the plasma plume from the magnetron assembly such that a layer of deposition material is disposed on the graphene layer without appreciably damaging the graphene layer.
摘要翻译： 用于在石墨烯层上沉积材料的方法包括布置石墨烯层，所述石墨烯层具有接近于磁控管组件的暴露的基本上平坦的表面，所述磁控管组件可操作地基本上沿着第一线发射等离子体羽流，其中所述石墨烯层的暴露的平坦表面是 以与第一线与暴露的平坦表面相交的第一线非正交的角度布置; 并且从磁控管组件发射等离子体羽流，使得沉积材料层设置在石墨烯层上，而不会明显损坏石墨烯层。
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公开(公告)号：US20240130243A1
公开(公告)日：2024-04-18
申请号：US18046948
申请日：2022-10-17
发明人： Timothy Mathew Philip , Ching-Tzu Chen , Kevin W. Brew , JIN PING HAN , Injo Ok
CPC分类号： H01L43/08 , H01L27/222 , H01L43/02 , H01L43/12
摘要： Embodiments of present invention provide a magnetic tunnel junction (MTJ) structure. The MTJ structure includes a MTJ stack, the MTJ stack including a tunnel barrier layer on a reference layer and a free layer on the tunnel barrier layer, wherein the free layer includes multiple sub free layers, the multiple sub free layers being multiple ferromagnetic strips placed parallel to each other on the tunnel barrier layer, the multiple ferromagnetic strips having respective first ends connected to a first electrode and respective second ends connected to a second electrode. A method of forming the MTJ structure is also provided.
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公开(公告)号：US09935283B2
公开(公告)日：2018-04-03
申请号：US15235142
申请日：2016-08-12
IPC分类号： H01L51/05 , H01L29/786 , H01L29/16 , H01L29/06 , H01L21/02 , H01L21/283 , H01L29/20 , H01L29/24 , H01L21/04 , H01L51/00 , H01L21/441 , H01L29/66 , H01L29/778 , G01N27/414 , H01L43/08 , H01L49/02 , H01L23/532 , H01L21/768
CPC分类号： H01L51/0541 , G01N27/414 , G01N27/4141 , G01N27/4146 , H01L21/02527 , H01L21/0254 , H01L21/02568 , H01L21/02606 , H01L21/043 , H01L21/283 , H01L21/441 , H01L21/7682 , H01L23/53276 , H01L28/60 , H01L29/0665 , H01L29/0673 , H01L29/1606 , H01L29/2003 , H01L29/24 , H01L29/66045 , H01L29/66969 , H01L29/778 , H01L29/78684 , H01L29/78696 , H01L43/08 , H01L51/0048 , H01L51/0558 , H01L2221/1094
摘要： Embodiments of the invention include a method for fabricating a semiconductor device and the resulting structure. A substrate is provided. A plurality of metal portions are formed on the substrate, wherein the plurality of metal portions are arranged such that areas of the substrate remain exposed. A thin film layer is deposited on the plurality of metal portions and the exposed areas of the substrate. A dielectric layer is deposited, wherein the dielectric layer is in contact with portions of the thin film layer on the plurality of metal portions, and wherein the dielectric layer is not in contact with portions of the thin film layer on the exposed areas of the substrate such that one or more enclosed spaces are present between the thin film layer on the exposed areas of the substrate and the dielectric layer.
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公开(公告)号：US20170148875A1
公开(公告)日：2017-05-25
申请号：US15427500
申请日：2017-02-08
IPC分类号： H01L29/06 , H01L29/16 , H01L43/02 , H01L43/10 , H01L43/08 , H01L43/06 , H01L49/00 , H01L29/24
CPC分类号： H01L43/065 , G01N27/125 , H01L27/22 , H01L29/0649 , H01L29/1029 , H01L29/1606 , H01L29/24 , H01L43/02 , H01L43/04 , H01L43/06 , H01L43/08 , H01L43/10 , H01L43/14 , H01L49/003
摘要： A technique relates to a semiconductor device. First metal contacts are formed on top of a substrate. The first metal contacts are arranged in a first direction, and the first metal contacts are arranged such that areas of the substrate remain exposed. Insulator pads are positioned at predefined locations on top of the first metal contacts, such that the insulator pads are spaced from one another. Second metal contacts are formed on top of the insulator pads, such that the second metal contacts are arranged in a second direction different from the first direction. The first and second metal contacts sandwich the insulator pads at the predefined locations. Surface-sensitive conductive channels are formed to contact the first metal contacts and the second metal contacts. Four-terminal devices are defined by the surface-sensitive conductive channels contacting a pair of the first metal contacts and contacting a pair of the metal contacts.
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公开(公告)号：US20140151771A1
公开(公告)日：2014-06-05
申请号：US13965781
申请日：2013-08-13
发明人： Ching-Tzu Chen , Marcin J. Gajek , Simone Raoux
IPC分类号： H01L29/82
CPC分类号： H01L43/12 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C23C14/024 , C23C14/08 , C23C14/225 , C23C14/35 , H01L29/1606 , H01L29/40111 , H01L29/4908 , H01L29/516 , H01L29/66075 , H01L29/66984 , H01L29/78618 , H01L29/78684
摘要： A method for depositing a material on a graphene layer includes arranging a graphene layer having an exposed substantially planar surface proximate to a magnetron assembly that is operative to emit a plasma plume substantially along a first line, wherein the exposed planar surface of the graphene layer is arranged at an angle that is non-orthogonal to the first line where the first line intersects the exposed planar surface; and emitting the plasma plume from the magnetron assembly such that a layer of deposition material is disposed on the graphene layer without appreciably damaging the graphene layer.
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公开(公告)号：US20240188455A1
公开(公告)日：2024-06-06
申请号：US18061312
申请日：2022-12-02
发明人： Timothy Mathew Philip , Injo Ok , JIN PING HAN , Ching-Tzu Chen , Kevin W. Brew
CPC分类号： H01L45/1286 , H01L27/2463 , H01L45/1253 , H01L45/1608 , H01L45/1675
摘要： A computer memory device includes a bottom electrode, a top electrode, and a memory component arranged between the top electrode and the bottom electrode. The memory component is made of a dielectric solid-state material and is in direct contact with the top electrode and the bottom electrode. The computer memory device further includes a proximity heater configured to increase a temperature of a portion of the memory component. The computer memory device further includes a layer of dielectric material in direct contact with the proximity heater. The layer of dielectric material is in direct contact with one of the bottom electrode and the top electrode.
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