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公开(公告)号：US20200243755A1
公开(公告)日：2020-07-30
申请号：US16260024
申请日：2019-01-28
Inventor： Jaewoo Jeong , Mahesh G. Samant , Stuart S.P. Parkin , Yari Ferrante
Abstract: A device is disclosed. The device includes a tetragonal Heusler compound of the form Mn3-xCoxGe, wherein 0
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公开(公告)号：US10177305B2
公开(公告)日：2019-01-08
申请号：US15410594
申请日：2017-01-19
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Jaewoo Jeong , Stuart S. P. Parkin , Mahesh G. Samant
IPC: H01L43/10 , H01F10/16 , H01F41/14 , H01L43/08 , H01L43/12 , C22C22/00 , C22C19/07 , C22F1/10 , C22F1/16 , H01F10/193 , H01F10/30 , G11C11/16 , H01F10/12 , H01F10/32
Abstract: Devices are described that include a multi-layered structure that is non-magnetic at room temperature, and which comprises alternating layers of Co and at least one other element E (such as Ga, Ge, and Sn). The composition of this structure is represented by Co1-xEx, with x being in the range from 0.45 to 0.55. The structure is in contact with a first magnetic layer that includes a Heusler compound. An MRAM element may be formed by overlying, in turn, the first magnetic layer with a tunnel barrier, and the tunnel barrier with a second magnetic layer (whose magnetic moment is switchable). Improved performance of the MRAM element may be obtained by placing a pinning layer between the first magnetic layer and the tunnel barrier.
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公开(公告)号：US20160217842A1
公开(公告)日：2016-07-28
申请号：US14605908
申请日：2015-01-26
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： JAEWOO JEONG , Stuart S.P. Parkin , Mahesh G. Samant
CPC classification number: G11C11/161 , G11C11/1673 , H01F10/1936 , H01F10/3254 , H01F10/3286 , H01L43/08 , H01L43/10
Abstract: A structure includes a tetragonal Heusler of the form Mn1+cX, in which X includes an element selected from the group consisting of Ge and Ga, with 0≦c≦3. The tetragonal Heusler is grown directly on (or more generally, over) a substrate oriented in the direction (001) and of the form YMn1+d, wherein Y includes an element selected from the group consisting of Ir and Pt, with 0≦d≦4. The tetragonal Heusler and the substrate are in proximity with each other, thereby allowing spin-polarized current to pass from one through the other. This structure may form part of a magnetic tunnel junction magnetoresistive device, and an array of such magnetoresistive devices may together form an MRAM.
Abstract translation: 结构包括Mn1 + cX形式的四方Heusler，其中X包括选自Ge和Ga的元素，其中0≤c≤3。 正方形Heusler直接在（或更一般地，更上面）方向（001）和YMn1 + d方向取向的衬底上生长，其中Y包括选自Ir和Pt的元素，其中0≤d ≤4。 四边形Heusler和衬底彼此靠近，从而允许自旋极化电流从一个通过另一个通过。 该结构可以形成磁性隧道结磁阻器件的一部分，并且这种磁阻器件的阵列可以一起形成MRAM。
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4.发明授权公开(公告)号：US11665979B2
公开(公告)日：2023-05-30
申请号：US16840179
申请日：2020-04-03
Inventor： Jaewoo Jeong , Mahesh G. Samant , Yari Ferrante , Panagiotis Charilaos Filippou , Chirag Garg , Stuart Stephen Papworth Parkin
CPC classification number: H01L43/10 , G11C11/161 , H01F10/329 , H01F10/3254 , H01F10/3286 , H01F41/32 , H01L27/228 , H01L43/02 , H01L43/12
Abstract: A method for providing a magnetic device and the magnetic device so provided are described. The magnetic device includes a magnetic layer having a surface. In some aspects, the magnetic layer is a free layer, a reference layer, or a top layer thereof. A tunneling barrier layer is deposited on the magnetic layer. At least a portion of the tunneling barrier layer adjacent to the magnetic layer is deposited at a deposition angle of at least thirty degrees from a normal to the surface of the magnetic layer. In some aspects, the deposition angle is at least fifty degrees.
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5.发明授权公开(公告)号：US10957848B2
公开(公告)日：2021-03-23
申请号：US16271721
申请日：2019-02-08
Inventor： Panagiotis Charilaos Filippou , Chirag Garg , Yari Ferrante , Stuart S. P. Parkin , Jaewoo Jeong , Mahesh G. Samant
Abstract: Devices are described that include a multi-layered structure that comprises three layers. The first layer is a magnetic Heusler compound, the second layer (acting as a spacer layer) is non-magnetic at room temperature and comprises alternating layers of Ru and at least one other element E (preferably Al; or Ga or Al alloyed with Ga, Ge, Sn or combinations thereof), and the third layer is also a magnetic Heusler compound. The composition of the second layer is represented by Ru1−xEx, with x being in the range from 0.45 to 0.55. An MRAM element may be constructed by forming, in turn, a substrate, the multi-layered structure, a tunnel barrier, and an additional magnetic layer (whose magnetic moment is switchable).
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Patent Agency Ranking
公开(公告)号：US20190035849A1
公开(公告)日：2019-01-31
申请号：US15660681
申请日：2017-07-26
Inventor： JAEWOO JEONG , Stuart S.P. Parkin , Mahesh G. Samant
IPC: H01L27/22 , H01F10/16 , H01F10/32 , H01L43/10 , H01L43/12 , H01L43/02 , G11C11/16 , C22C21/00 , C22C22/00 , B32B15/04
CPC classification number: H01L27/222 , B32B15/04 , B32B2457/00 , C22C21/00 , C22C22/00 , C22C2202/02 , G11C11/161 , H01F10/16 , H01F10/1936 , H01F10/30 , H01F10/3254 , H01F10/3286 , H01F10/329 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: Devices are described that include a multi-layered structure that is non-magnetic at room temperature, and which comprises alternating layers of Co and at least one other element E (that is preferably Al; or Al alloyed with Ga, Ge, Sn or combinations thereof). The composition of this structure is represented by Co1-xEx, with x being in the range from 0.45 to 0.55. The structure is in contact with a first magnetic layer that includes a Heusler compound. An MRAM element may be formed by overlying, in turn, the first magnetic layer with a tunnel barrier, and the tunnel barrier with a second magnetic layer (whose magnetic moment is switchable). Improved performance of the MRAM element may be obtained by placing an optional pinning layer between the first magnetic layer and the tunnel barrier.
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公开(公告)号：US20180205008A1
公开(公告)日：2018-07-19
申请号：US15410594
申请日：2017-01-19
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： JAEWOO JEONG , Stuart S.P. Parkin , Mahesh G. Samant
IPC: H01L43/10 , H01F10/16 , H01F41/14 , H01L43/08 , H01L43/12 , C22C22/00 , C22C19/07 , C22F1/10 , C22F1/16
CPC classification number: H01L43/10 , C22C19/07 , C22C22/00 , C22F1/10 , C22F1/16 , G11C11/161 , H01F10/123 , H01F10/16 , H01F10/1936 , H01F10/30 , H01F10/3254 , H01F10/3286 , H01F41/14 , H01L43/08 , H01L43/12
Abstract: Devices are described that include a multi-layered structure that is non-magnetic at room temperature, and which comprises alternating layers of Co and at least one other element E (such as Ga, Ge, and Sn). The composition of this structure is represented by Co1-xEx, with x being in the range from 0.45 to 0.55. The structure is in contact with a first magnetic layer that includes a Heusler compound. An MRAM element may be formed by overlying, in turn, the first magnetic layer with a tunnel barrier, and the tunnel barrier with a second magnetic layer (whose magnetic moment is switchable). Improved performance of the MRAM element may be obtained by placing a pinning layer between the first magnetic layer and the tunnel barrier.
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公开(公告)号：US11005029B2
公开(公告)日：2021-05-11
申请号：US16146728
申请日：2018-09-28
Inventor： Jaewoo Jeong , Mahesh G. Samant , Stuart S. P. Parkin , Yari Ferrante
Abstract: A device is disclosed. The device includes a first magnetic layer and a tunnel barrier. The first magnetic layer has a volume uniaxial magnetic crystalline anisotropy. The magnetic moment of the first layer is substantially perpendicular to the first layer. The tunnel barrier is in proximity to the first magnetic layer. The orientation of the magnetic moment of the first magnetic layer is reversed by spin transfer torque induced by current passing between and through the first magnetic layer and the tunnel barrier.
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9.发明申请公开(公告)号：US20200259076A1
公开(公告)日：2020-08-13
申请号：US16271721
申请日：2019-02-08
Inventor： Panagiotis Charilaos Filippou , Chirag Garg , Yari Ferrante , Stuart S.P. Parkin , Jaewoo Jeong , Mahesh G. Samant
Abstract: Devices are described that include a multi-layered structure that comprises three layers. The first layer is a magnetic Heusler compound, the second layer (acting as a spacer layer) is non-magnetic at room temperature and comprises alternating layers of Ru and at least one other element E (preferably Al; or Ga or Al alloyed with Ga, Ge, Sn or combinations thereof), and the third layer is also a magnetic Heusler compound. The composition of the second layer is represented by Ru1-xEx, with x being in the range from 0.45 to 0.55. An MRAM element may be constructed by forming, in turn, a substrate, the multi-layered structure, a tunnel barrier, and an additional magnetic layer (whose magnetic moment is switchable).
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公开(公告)号：US10651234B2
公开(公告)日：2020-05-12
申请号：US16119785
申请日：2018-08-31
Inventor： Jaewoo Jeong , Mahesh G. Samant , Stuart S. P. Parkin , Yari Ferrante
IPC: H01L43/08 , H01L43/10 , H01L43/02 , H01L43/12 , H01L43/04 , H01L27/22 , H01L21/02 , H01L21/8239 , G11C11/16
Abstract: A device and method for providing the device are described. The device includes a substrate, a MnxN layer overlying the substrate, a multi-layered structure that is non-magnetic at room temperature and a first magnetic layer. The MnxN layer has 2≤x≤4.75. The multi-layered structure comprises alternating layers of Co and E, wherein E comprises at least one other element that includes Al. The composition of the multi-layered structure is represented by Co1-xEx, with x being in the range from 0.45 to 0.55. The first magnetic layer includes a Heusler compound. The first magnetic layer is in contact with the multi-layered structure and the first magnetic layer forms part of a magnetic tunnel junction.
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