Organ regeneration device
    1.
    发明授权
    Organ regeneration device 有权
    器官再生装置

    公开(公告)号:US08652524B2

    公开(公告)日:2014-02-18

    申请号:US12325015

    申请日:2008-11-28

    摘要: An organ regeneration device adapted to be used by placing it into a defective portion of an organ to regenerate the organ is provided. The organ regeneration device has a base body having a shape corresponding to a shape of the defective portion of the organ. The organ regeneration device also has particles carried on the base body, wherein the particles are composed of a different material from that of the base body. The organ regeneration device also has a growth-related substance contained in the organ regeneration device for growth and differentiation of cells around the defective portion. The growth-related substance contains an angiogenesis factor. Further, the growth-related substance contains nucleic acid containing a base sequence coding for amino-acid sequence of a growth factor different from the angiogenesis factor. Furthermore, the nucleic acid is introduced into a host cell.

    摘要翻译: 提供了一种适于通过将其置于器官的缺陷部分以再生器官而使用的器官再生装置。 器官再生装置具有与器官的有缺陷部的形状对应的形状的基体。 器官再生装置还具有承载在基体上的颗粒,其中颗粒由与基体不同的材料构成。 器官再生装置还具有包含在器官再生装置中的生长相关物质,用于在缺陷部分周围的细胞的生长和分化。 生长相关物质含有血管生成因子。 此外,生长相关物质含有含有编码不同于血管生成因子的生长因子的氨基酸序列的碱基序列的核酸。 此外,将核酸引入宿主细胞。

    Interspinous spacer
    3.
    发明申请
    Interspinous spacer 审中-公开
    椎间间隔

    公开(公告)号:US20070149972A1

    公开(公告)日:2007-06-28

    申请号:US10556790

    申请日:2004-05-14

    IPC分类号: A61F2/30

    CPC分类号: A61B17/7053 A61B17/7062

    摘要: An object of the present invention is to provide an interspinous spacer which can be reliably held between adjacent spinous processes to maintain an appropriate space between the adjacent spinous processes, and in particular to provide an interspinous spacer which allows a less invasive operation to be carried out without extensive resection of bone or soft tissue. The interspinous spacer 1 is adapted to be used by inserting it into a space between a spinous process 101 and a spinous process 102, and it is formed from a block body having a recess 21 for receiving a part of each of the spinous processes in a state that the block body is inserted into the space between the spinous processes 101 and 102. The recess 21 is formed in the peripheral surface of the block body 2. The recess 21 has an arc-shaped bottom. The depth of the recess 21 is in the range of 0.5 to 10 mm, and the width of the recess is in the range of 1 to 15 mm. Further, the block body 2 is formed into a substantially cylindrical shape.

    摘要翻译: 本发明的目的是提供一种棘突间间隔物,其可以可靠地保持在相邻的棘突之间以保持相邻棘突之间的适当空间,并且特别是提供一种椎间间隔垫,其允许进行较少侵入性的操作 没有大量切除骨或软组织。 椎间间隔物1适于通过将其插入到棘突101和棘突102之间的空间中而使用,并且其由具有凹部21的块体形成,所述凹部21用于接收一个棘突中的每个棘突的一部分 指出块体被插入到棘突101和102之间的空间中。 凹部21形成在块体2的周面上。 凹部21具有弧形底部。 凹部21的深度在0.5〜10mm的范围内,凹部的宽度在1〜15mm的范围内。 此外,块体2形成为大致圆筒状。

    Porous composite containing calcium phosphate and process for producing the same
    4.
    发明授权
    Porous composite containing calcium phosphate and process for producing the same 有权
    含磷酸钙的多孔复合材料及其制备方法

    公开(公告)号:US08039090B2

    公开(公告)日:2011-10-18

    申请号:US10558245

    申请日:2004-05-26

    IPC分类号: B32B3/00

    摘要: A porous composite comprising a porous layer containing a calcium phosphate ceramic, and a dense layer formed on part of the porous layer and having a smaller average pore size than that of the porous layer. The porous composite can be produced by (1) introducing a slurry containing a calcium phosphate ceramic/collagen composite and collagen into a molding die having a high thermal conductivity, (2) rapidly freezing and drying the slurry in the molding die, to form a porous body comprising a porous layer and a dense layer formed on the porous layer, (3) cross-linking collagen in the porous body, and (4) removing the dense layer except for a portion thereof on a surface coming into contact with a soft tissue when implanted in a human body, so that the porous layer is exposed.

    摘要翻译: 一种多孔复合体,其包含含有磷酸钙陶瓷的多孔层,以及形成在所述多孔层的一部分上并且具有比所述多孔层的平均孔径更小的致密层。 多孔复合材料可以通过(1)将含有磷酸钙陶瓷/胶原复合材料和胶原的浆料引入到具有高导热性的成型模具中,(2)快速冷冻并干燥成型模具中的浆料,从而形成 多孔体包括多孔层和形成在多孔层上的致密层,(3)在多孔体中交联胶原,以及(4)在与柔软接触的表面上去除除了其一部分之外的致密层 植入人体时的组织,使得多孔层被暴露。

    POLISHING COMPOSITION AND POLISHING METHOD
    6.
    发明申请
    POLISHING COMPOSITION AND POLISHING METHOD 审中-公开
    抛光组合物和抛光方法

    公开(公告)号:US20080125017A1

    公开(公告)日:2008-05-29

    申请号:US11943159

    申请日:2007-11-20

    IPC分类号: B24B1/00 C09K3/14

    摘要: To provide a polishing composition which is capable of selectively polishing a silicon oxide film against a polysilicon film, and a polishing method employing such a polishing composition.The polishing composition of the present invention comprises abrasive grains selected from silica and ceria; an alkali selected from ammonia, an ammonium salt, an alkali metal salt and an alkali metal hydroxide; and an organic modified silicone oil selected from a polyoxyethylene-modified silicone oil, a poly(oxyethyleneoxypropylene)-modified silicone oil, an epoxy/polyether-modified silicone oil and an amino/polyether-modified silicone oil.

    摘要翻译: 提供能够选择性地对多晶硅膜抛光氧化硅膜的抛光组合物和使用这种抛光组合物的抛光方法。 本发明的抛光组合物包含选自二氧化硅和二氧化铈的磨料颗粒; 选自氨,铵盐,碱金属盐和碱金属氢氧化物的碱; 和选自聚氧乙烯改性硅油,聚(氧乙烯氧丙烯)改性硅油,环氧/聚醚改性硅油和氨基/聚醚改性硅油的有机改性硅油。

    Semiconductor device for generating high voltage potentials
    8.
    发明授权
    Semiconductor device for generating high voltage potentials 失效
    用于产生高电压电位的半导体器件

    公开(公告)号:US5550775A

    公开(公告)日:1996-08-27

    申请号:US361551

    申请日:1994-12-22

    CPC分类号: H03K17/063 G11C5/145 G11C8/08

    摘要: A semiconductor device comprises: a signal of high voltage not less than the power voltage; a first transistor for transmitting the high voltage signal; a second transistor for electrically charging and discharging the gate potential of the first transistor; and a circuit for generating a pulse signal of which "H" level is a voltage higher than the power voltage by the threshold voltage of the second transistor. The pulse signal generating circuit is connected to the gate electrode of the second transistor. This cancels the drop of a voltage corresponding to the threshold voltage generated at the time when the electric charge is transferred to the gate electrode of the first transistor. Accordingly, even though the power voltage is low, a high voltage signal can be transferred through the first transistor and the word line potential can be boosted to a voltage not less than the power voltage.

    摘要翻译: 半导体器件包括:不小于电源电压的高电压信号; 用于发送高电压信号的第一晶体管; 用于对第一晶体管的栅极电位进行充电和放电的第二晶体管; 以及电路,用于产生“H”电平是比第二晶体管的阈值电压高于电源电压的电压的脉冲信号。 脉冲信号发生电路连接到第二晶体管的栅电极。 这取消了与将电荷转移到第一晶体管的栅电极时产生的阈值电压相对应的电压的下降。 因此,即使电源电压低,可以通过第一晶体管传输高电压信号,并且可以将字线电位升高到不低于电源电压的电压。

    Polishing composition and polishing method
    9.
    发明申请
    Polishing composition and polishing method 审中-公开
    抛光组合物和抛光方法

    公开(公告)号:US20070202703A1

    公开(公告)日:2007-08-30

    申请号:US11711234

    申请日:2007-02-27

    IPC分类号: H01L21/461 B24D3/02 C09K3/14

    摘要: A polishing composition contains silica abrasive grains and an iodine compound. The silica abrasive grains exhibit a negative zeta potential in the polishing composition. The silica abrasive grains have an average primary particle size of 30 nm or smaller, and the polishing composition has a pH of 4 or lower. The polishing composition is suitable for polishing a polysilicon film and a silicon nitride film.

    摘要翻译: 抛光组合物含有二氧化硅磨粒和碘化合物。 二氧化硅磨粒在抛光组合物中表现出负ζ电位。 二氧化硅磨粒的平均一次粒径为30nm以下,抛光组合物的pH为4以下。 抛光组合物适用于抛光多晶硅膜和氮化硅膜。