Abstract:
A miniaturized particulate matter detector that includes a filter and a concentration detector is provided. The filter has a plurality of holes, and the concentration detector is correspondingly disposed under the filter. The concentration detector has a detected area used to detect a concentration of at least one miniaturized particulate matter. A manufacturing method of the filter is also provided.
Abstract:
A miniaturized particulate matter detector that includes a filter and a concentration detector is provided. The filter has a plurality of holes, and the concentration detector is correspondingly disposed under the filter. The concentration detector has a detected area used to detect a concentration of at least one miniaturized particulate matter. A manufacturing method of the filter is also provided.
Abstract:
A semiconductor device includes a substrate, a redistribution layer, a plurality of through-silicon vias (TSVs), and a plating seed layer. The substrate has a first surface and a second surface opposite to each other, and a plurality of cavities. The redistribution layer is disposed on the first surface, and the TSVs are respectively disposed in the cavities. The plating seed layer is disposed between the inner wall of each of the cavities and the corresponding TSVs. The anti-oxidation layer is disposed between the plating seed layer and the corresponding TSVs. The buffer layer covers the first surface and exposes the redistribution layers. Furthermore, a manufacturing method and a stacking structure of the semiconductor device are also provided.
Abstract:
An encapsulation of backside illumination photosensitive device including a circuit sub-mount, a backside illumination photosensitive device, a plurality of conductive terminals, and a heat dissipation structure is provided. The backside illumination photosensitive device includes an interconnection layer and a photosensitive device array, wherein the interconnection layer is located on the circuit sub-mount, and between the photosensitive device array and the circuit sub-mount. The conductive terminals are located between the interconnection layer and the circuit sub-mount to electrically connect the interconnection layer and the circuit sub-mount. The heat dissipation structure is located under the interconnection layer, and the heat dissipation structure and the photosensitive device array are respectively located at two opposite sides of the interconnection layer.
Abstract:
In an embodiment, a miniaturize particulate matter detector includes a filter having a plurality of holes, and a concentration detector correspondingly disposed under the filter. The concentration detector has a detect area used for detecting a concentration of at least one miniaturize particulate matter. A manufacturing method of the filter is also provided.
Abstract:
A semiconductor device includes a substrate, a redistribution layer, a plurality of through-silicon vias (TSVs), and a plating seed layer. The substrate has a first surface and a second surface opposite to each other, and a plurality of cavities. The redistribution layer is disposed on the first surface, and the TSVs are respectively disposed in the cavities. The plating seed layer is disposed between the inner wall of each of the cavities and the corresponding TSVs. The anti-oxidation layer is disposed between the plating seed layer and the corresponding TSVs. The buffer layer covers the first surface and exposes the redistribution layers. Furthermore, a manufacturing method and a stacking structure of the semiconductor device are also provided.
Abstract:
An encapsulation of backside illumination photosensitive device including a circuit sub-mount, a backside illumination photosensitive device, a plurality of conductive terminals, and a heat dissipation structure is provided. The backside illumination photosensitive device includes an interconnection layer and a photosensitive device array, wherein the interconnection layer is located on the circuit sub-mount, and between the photosensitive device array and the circuit sub-mount. The conductive terminals are located between the interconnection layer and the circuit sub-mount to electrically connect the interconnection layer and the circuit sub-mount. The heat dissipation structure is located under the interconnection layer, and the heat dissipation structure and the photosensitive device array are respectively located at two opposite sides of the interconnection layer.
Abstract:
An optical sensing module, adapted to sense a characteristic of an object by a sensing beam, comprises a carrying substrate, a transparent cover having a reflective surface thereon, a side wall, an optical grating, and an optical sensor. The reflective surface has a light-transmissive opening that exposes a part of the transparent cover. The side wall is disposed around the carrying substrate and is located between the carrying substrate and the transparent cover. The optical grating is disposed on the carrying substrate and a position of the optical grating corresponds to the light-transmissive opening. The optical sensor is disposed on the carrying substrate and is located at a side of the optical grating, wherein the carrying substrate, the side wall and the transparent cover form a vacuum chamber. The optical grating and the optical sensor are disposed in the vacuum chamber.
Abstract:
In an embodiment, a miniaturize particulate matter detector includes a filter having a plurality of holes, and a concentration detector correspondingly disposed under the filter. The concentration detector has a detect area used for detecting a concentration of at least one miniaturize particulate matter. A manufacturing method of the filter is also provided.
Abstract:
Conductive plug structures suitable for stacked semiconductor device package is provided, wherein large contact region between the conductive plug structures and the corresponding pads of devices can be achieved, to reduce electrical impedance. Therefore, package structures such as photosensitive device packages using the conductive plug structures have superior electrical performance and reliability.