公开(公告)号：US20190237769A1

公开(公告)日：2019-08-01

申请号：US16255833

申请日：2019-01-24

Applicant: Industrial Technology Research Institute

Inventor： Tzu-Chi Chou ,  Kuo-Chuang Chiu ,  Tzu-Yu Liu ,  Yung-Hsiang Juan ,  Ying-Hao Chu

IPC: H01M4/90 ,  H01M8/1004

CPC classification number: H01M4/9033 ,  H01M8/1004 ,  H01M2004/028 ,  H01M2008/1293

Abstract: A cathode layer and a membrane electrode assembly of a solid oxide fuel cell are provided. The cathode layer consists of a plurality of perovskite crystal films, and the average change rate of linear thermal expansion coefficients of these perovskite crystal films is about 5% to 40% along the thickness direction. The membrane electrode assembly includes the above-mentioned cathode layer, and the linear thermal expansion coefficients of these perovskite crystal films are reduced towards the solid electrolyte layer of the membrane electrode assembly.

公开(公告)号：US09401433B1

公开(公告)日：2016-07-26

申请号：US14982899

申请日：2015-12-29

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Shan-Haw Chiou ,  Tzu-Chi Chou ,  Wen-Hsuan Chao ,  Hsin-Ming Cheng ,  Mu-Tung Chang ,  Tien-Heng Huang ,  Ren-Fong Cai

IPC: H01L29/00 ,  H01L29/786 ,  H01L29/24 ,  H01L21/02

CPC classification number: H01L29/78693 ,  H01L21/0237 ,  H01L21/02565 ,  H01L21/02579 ,  H01L21/02631 ,  H01L29/24

Abstract: A p-type metal oxide semiconductor material is provided, which is composed of AlxGe(1-x)Oy, wherein 0

Abstract translation: 提供了由Al x Ge（1-x）O y组成的p型金属氧化物半导体材料，其中0

公开(公告)号：US20140178753A1

公开(公告)日：2014-06-26

申请号：US13875288

申请日：2013-05-02

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Wen-Bing Chu ,  Ming-Yi Lu ,  Guan-Lin Lai ,  Cheng-Jien Peng ,  Tzu-Chi Chou ,  Dar-Jen Liu ,  Chang-Rung Yang

IPC: H01M4/13

CPC classification number: H01M4/13 ,  H01M4/366 ,  H01M4/62 ,  H01M4/622 ,  H01M4/625 ,  H01M10/4235 ,  H01M2200/106

Abstract: A lithium ion battery and an electrode structure thereof are provided. The electrode structure at least includes a current collecting substrate, an electrode active material layer on the current collecting substrate, and a complex thermo-sensitive coating layer sandwiched in between the current collecting substrate and the electrode active material layer. The complex thermo-sensitive coating layer at least contains two or more of PTC (positive temperature coefficient) materials so as to have adjustable stepped resistivity according to temperature rise.

Abstract translation: 提供锂离子电池及其电极结构。 电极结构至少包括集电衬底，集电衬底上的电极活性材料层和夹在集电衬底和电极活性材料层之间的复合热敏涂层。 复合热敏涂层至少含有两种或多种PTC（正温度系数）材料，以便根据温度升高具有可调节的阶梯电阻率。

公开(公告)号：US10944115B2

公开(公告)日：2021-03-09

申请号：US16255833

申请日：2019-01-24

Applicant: Industrial Technology Research Institute

Inventor： Tzu-Chi Chou ,  Kuo-Chuang Chiu ,  Tzu-Yu Liu ,  Yung-Hsiang Juan ,  Ying-Hao Chu

IPC: H01M4/90 ,  H01M8/1004 ,  H01M4/86 ,  H01M8/124 ,  H01M4/02

Abstract: A cathode layer and a membrane electrode assembly of a solid oxide fuel cell are provided. The cathode layer consists of a plurality of perovskite crystal films, and the average change rate of linear thermal expansion coefficients of these perovskite crystal films is about 5% to 40% along the thickness direction. The membrane electrode assembly includes the above-mentioned cathode layer, and the linear thermal expansion coefficients of these perovskite crystal films are reduced towards the solid electrolyte layer of the membrane electrode assembly.

公开(公告)号：US09224599B2

公开(公告)日：2015-12-29

申请号：US14576401

申请日：2014-12-19

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Shan-Haw Chiou ,  Tzu-Chi Chou ,  Chiung-Hui Huang ,  Yu-Tzu Hsieh

IPC: H01L21/02 ,  H01L29/22 ,  H01L29/36

CPC classification number: H01L21/02579 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02628 ,  H01L21/02664 ,  H01L29/22 ,  H01L29/36

Abstract: A P-type metal oxide semiconductor material is provided. The P-type metal oxide semiconductor material has a formula of In(1−3)Ga(1−b)Zn(1+a+b)O4, wherein 0≦a≦0.1, 0≦b≦0.1, and 0

Abstract translation: 提供了P型金属氧化物半导体材料。 P型金属氧化物半导体材料具有In（1-3）Ga（1-b）Zn（1 + a + b）O4的式，其中0＆nlE; a＆nlE; 0.1,0＆amp; nlE; b＆nlE; 0.1和0 < a + b＆nlE; 0.16。 特别是，P型金属氧化物半导体材料的空穴载流子浓度为1×10 11 cm -3〜5×10 18 cm -3。

公开(公告)号：US11939268B2

公开(公告)日：2024-03-26

申请号：US17133270

申请日：2020-12-23

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Kuo-Chuang Chiu ,  Tzu-Yu Liu ,  Tien-Heng Huang ,  Tzu-Chi Chou ,  Cheng-Ting Lin

IPC: C04B35/64 ,  C04B35/14 ,  C04B35/628

CPC classification number: C04B35/64 ,  C04B35/14 ,  C04B35/62807 ,  C04B2235/5204 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/96

Abstract: A method of forming low-k material is provided. The method includes providing a plurality of core-shell particles. The core of the core-shell particles has a first ceramic with a low melting point. The shell of the core-shell particles has a second ceramic with a low melting point and a low dielectric constant. The core-shell particles are sintered and molded to form a low-k material. The shell of the core-shell particles is connected to form a network structure of a microcrystal phase.

公开(公告)号：US08927986B2

公开(公告)日：2015-01-06

申请号：US14039188

申请日：2013-09-27

Applicant: Industrial Technology Research Institute

Inventor： Tzu-Chi Chou ,  Kuo-Chuang Chiu ,  Show-Ju Peng ,  Shan-Haw Chiou ,  Yu-Tsz Shie

IPC: H01L29/10 ,  H01L29/12

CPC classification number: H01L29/12 ,  C01G9/02 ,  C01G15/006 ,  C01P2002/50 ,  C01P2002/52 ,  C04B35/453 ,  C04B35/624 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3281 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/449 ,  H01L29/26 ,  H01L29/7869 ,  H01L33/26

Abstract: The disclosure provides a p-type metal oxide semiconductor material. The p-type metal oxide semiconductor material has the following formula: In1−xGa1−yMx+yZnO4+m, wherein M is Ca, Mg, or Cu, 0

Abstract translation: 本公开提供了一种p型金属氧化物半导体材料。 p型金属氧化物半导体材料具有下式：In1-xGa1-yMx + yZnO4 + m，其中M是Ca，Mg或Cu，0