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公开(公告)号：US20230309323A1
公开(公告)日：2023-09-28
申请号：US18040734
申请日：2021-09-06
发明人： Jin Pyo HONG
摘要： Disclosed is a selective device having high selectivity and temperature stability. The selective device has a doped insulating layer. The doped insulating layer has a metal oxide and a chalcogen element introduced into the metal oxide. Metal oxide has amorphous structure with minimized defects, and the introduced chalcogen elements form a conductive channel at a specific voltage and realize bi-directional switching characteristics.
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2.发明申请公开(公告)号：US20220165950A1
公开(公告)日：2022-05-26
申请号：US17426033
申请日：2020-01-29
发明人： Jin Pyo HONG , Gabriel JANG
摘要： A selection device and a crosspoint memory including the same are provided. The selection device has a lower electrode. A polycrystalline metal oxide layer including insulating crystal grains and a conductive nanochannel formed in a grain boundary between the crystal grains is disposed on the lower electrode. An upper electrode is disposed on the polycrystalline metal oxide layer.
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公开(公告)号：US20240322031A1
公开(公告)日：2024-09-26
申请号：US18578739
申请日：2022-07-12
发明人： Jea Gun PARK , Jin Pyo HONG , Min Won KIM , Byoung Seok LEE , Ji Hun KIM
IPC分类号： H01L29/778 , H01L21/762 , H01L29/08 , H01L29/16
CPC分类号： H01L29/7788 , H01L21/76243 , H01L29/0847 , H01L29/16
摘要： The present invention relates to a transistor based on a compact drain and hetero-material structure. The transistor according to one embodiment includes substrates including a buried oxide (BOX) layer and active layers formed on the buried oxide layer; an insulating layer formed on the substrates; and electrode layers formed on the insulating layer and including a drain electrode, a gate electrode, and a source electrode. The active layers include a first semiconductor layer corresponding to a drain region, a second semiconductor layer corresponding to a channel region, and a third semiconductor layer corresponding to a source region. The first semiconductor layer is formed to be thinner than the second semiconductor layer, and the third semiconductor layer is formed of a material having a band gap lower than that of the second semiconductor layer.
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公开(公告)号：US20210104667A1
公开(公告)日：2021-04-08
申请号：US17123824
申请日：2020-12-16
发明人： Jin Pyo HONG , Gwang Ho BAEK , Ah Rahm LEE , Tae Yoon KIM
IPC分类号： H01L45/00 , G11C13/00 , H01L27/24 , H01L29/732 , G11C11/56 , H01L29/417 , H01L29/66
摘要： Disclosed are a switching atomic transistor with a diffusion barrier layer and a method of operating the same. By introducing a diffusion barrier layer in an intermediate layer having a resistance change characteristic, it is possible to minimize variation in the entire number of ions in the intermediate layer involved in operation of the switching atomic transistor or to eliminate the variation to maintain stable operation of the switching atomic transistor. In addition, it is possible to stably implement a multi-level cell of a switching atomic transistor capable of storing more information without increasing the number of memory cells. Also, disclosed are a vertical atomic transistor with a diffusion barrier layer and a method of operating the same. By producing an ion channel layer in a vertical structure, it is possible to significantly increase transistor integration.
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公开(公告)号：US20190198759A1
公开(公告)日：2019-06-27
申请号：US16322344
申请日：2017-07-12
发明人： Jin Pyo HONG , Gwang Ho BAEK , Ah Rahm LEE , Tea Yoon KIM
CPC分类号： H01L45/1266 , G11C13/0011 , H01L27/2454 , H01L29/417 , H01L29/66 , H01L29/732 , H01L45/00 , H01L45/1206 , H01L45/1233 , H01L45/145 , H01L45/1658
摘要： Disclosed are a switching atomic transistor with a diffusion barrier layer and a method of operating the same. By introducing a diffusion barrier layer in an intermediate layer having a resistance change characteristic, it is possible to minimize variation in the entire number of ions in the intermediate layer involved in operation of the switching atomic transistor or to eliminate the variation to maintain stable operation of the switching atomic transistor. In addition, it is possible to stably implement a multi-level cell of a switching atomic transistor capable of storing more information without increasing the number of memory cells. Also, disclosed are a vertical atomic transistor with a diffusion barrier layer and a method of operating the same. By producing an ion channel layer in a vertical structure, it is possible to significantly increase transistor integration.
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公开(公告)号：US20220263014A1
公开(公告)日：2022-08-18
申请号：US17630574
申请日：2020-06-23
发明人： Jin Pyo HONG
摘要： Disclosed are a synthetic antiferromagnetic material using the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction and a multibit memory using the synthetic antiferromagnetic material that is formed. The synthetic antiferromagnetic material has a non-magnetic metal layer as an RKKY inducing layer in the center, interaction between upper and lower ferromagnetic layers is imparted according to the thickness of the RKKY inducing layer, and the magnetization of an anti-parallel state is maximized therebetween. When such synthetic antiferromagnetic materials are cumulatively stacked and tunnel barrier layers are provided therebetween, multiple bits can be stored. Namely, data may be stored by supplying a program current in parallel to the surface of the RKKY inducing layer, and a resistance state may be checked by supplying current in a vertical direction to the surface of the RKKY inducing layer.
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公开(公告)号：US20200058339A1
公开(公告)日：2020-02-20
申请号：US16344662
申请日：2017-10-25
发明人： Jin Pyo HONG , Hae Soo PARK
摘要： A structure and operation method of a spin device using a magnetic domain wall movement by spin orbit torque are provided. It is possible to invert the magnetization of free layer of the device at a low value of current by using the spin orbital torque, and the structure of the device is simpler than that of the conventional CMOS. Further, a spin synapse device to which a free layer of multiaxial anisotropy is applied in addition to movement of a magnetic domain wall is provided. Since the magnetoresistance can be adjusted according to the angle of the pinned layer and the free layer, it is easy to apply multi-bit and it can be applied to artificial synapse technology.
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公开(公告)号：US20190227130A1
公开(公告)日：2019-07-25
申请号：US16322399
申请日：2017-07-28
发明人： Jin Pyo HONG , Seung Mo YANG , Hae Soo PARK
IPC分类号： G01R33/09
摘要： A three-axis magnetic sensor which is not physically separated from each other and made of one element is provided. A spin-orbit torque is generated through an interface junction between a magnetization seed layer and a magnetization free layer, and through this, a change in an in-plane magnetic field may be sensed in the form of current or voltage in the magnetization seed layer. Further, a tunneling insulating layer and a magnetization pinned layer are formed on the magnetization free layer. The formed structure induces a tunnel magneto-resistance phenomenon. Through this, a change in a magnetic field in a vertical direction is sensed.
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9.发明申请公开(公告)号：US20180013059A1
公开(公告)日：2018-01-11
申请号：US15544356
申请日：2016-01-06
发明人： Jin Pyo HONG , Ja Bin LEE
摘要： An MTJ structure having vertical magnetic anisotropy is provided. The MTJ structure having vertical magnetic anisotropy can comprise: a substrate; an artificial antiferromagnetic layer located on the substrate; a buffer layer located on the artificial antiferromagnetic layer, and including W or an alloy containing W; a first ferromagnetic layer located on the buffer layer, and having vertical magnetic anisotropy; a tunneling barrier layer located on the first ferromagnetic layer; and a second ferromagnetic layer located on the tunneling barrier layer, and having vertical magnetic anisotropy. Accordingly, in the application of bonding the artificial antiferromagnetic layer with a CoFeB/MgO/CoFeB structure, the MTJ structure having improved thermal stability at high temperature can be provided by using the buffer layer therebetween.
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公开(公告)号：US20230083328A1
公开(公告)日：2023-03-16
申请号：US17796102
申请日：2021-01-08
发明人： Jin Pyo HONG , Jeong Hun SHIN , Yoon Seong CHOI
IPC分类号： G11C11/16
摘要： A magnetic tunnel junction device and an operating method thereof are disclosed. The magnetization switching of a free layer may be induced through spin orbit torque or spin transfer torque, and a magnetization direction of a pinned layer may be easily set according to the intention of a designer through ferromagnetic coupling and antiferromagnetic coupling.
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