公开(公告)号：US20180040530A1

公开(公告)日：2018-02-08

申请号：US15663956

申请日：2017-07-31

Applicant: Infineon Technologies AG

Inventor： Joachim Mahler ,  Benjamin Reichert ,  Chen Wen Lee ,  Giovanni Ragasa Garbin ,  Peter Strobel

IPC: H01L23/29 ,  H01L23/00 ,  C08K3/36 ,  H01L21/56

CPC classification number: H01L23/49513 ,  H01L21/563 ,  H01L24/01 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/75 ,  H01L24/83 ,  H01L2224/01 ,  H01L2224/04026 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05687 ,  H01L2224/27312 ,  H01L2224/2732 ,  H01L2224/29015 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29294 ,  H01L2224/293 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29387 ,  H01L2224/32013 ,  H01L2224/32058 ,  H01L2224/32105 ,  H01L2224/32106 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/83192 ,  H01L2224/83385 ,  H01L2224/83424 ,  H01L2224/83439 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/8346 ,  H01L2224/83464 ,  H01L2224/83815 ,  H01L2224/8384 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2224/83948 ,  H01L2225/06513 ,  H01L2924/07802 ,  H01L2924/07811 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/01028 ,  H01L2924/01015 ,  H01L2924/0665 ,  H01L2924/05442 ,  H01L2924/00012

Abstract: A semiconductor device includes a carrier, a semiconductor die and a die attach material arranged between the carrier and the semiconductor die. A fillet height of the die attach material is less than about 95% of a height of the semiconductor die. A maximum extension of the die attach material over edges of a main surface of the semiconductor die facing the die attach material is less than about 200 micrometers.

公开(公告)号：US11296015B2

公开(公告)日：2022-04-05

申请号：US17036271

申请日：2020-09-29

Applicant: Infineon Technologies AG

Inventor： Joachim Mahler ,  Giovanni Ragasa Garbin ,  Chen Wen Lee ,  Benjamin Reichert ,  Peter Strobel

IPC: H01L29/40 ,  H01L21/00 ,  H01L23/495 ,  H01L23/00

Abstract: A semiconductor device includes a carrier, a power semiconductor die that includes first and second opposite facing main surfaces, a side surface extending from the first main surface to the second main surface, and first and second electrodes disposed on the first and second main surfaces, respectively, a die attach material arranged between the carrier and the first electrode, wherein the die attach material forms a fillet at the side surface of the power semiconductor die, wherein a fillet height of the fillet is less than about 95% of a height of the power semiconductor die, wherein the height of the power semiconductor die is a length of the side surface, and wherein a maximum extension of the die attach material over edges of a main surface of the power semiconductor die facing the die attach material is less than about 200 micrometers.

公开(公告)号：US10396015B2

公开(公告)日：2019-08-27

申请号：US15663956

申请日：2017-07-31

Applicant: Infineon Technologies AG

Inventor： Joachim Mahler ,  Benjamin Reichert ,  Chen Wen Lee ,  Giovanni Ragasa Garbin ,  Peter Strobel

IPC: H01L29/40 ,  H01L21/00 ,  H01L23/495 ,  H01L21/56 ,  H01L23/00

Abstract: A semiconductor device includes a carrier, a semiconductor die and a die attach material arranged between the carrier and the semiconductor die. A fillet height of the die attach material is less than about 95% of a height of the semiconductor die. A maximum extension of the die attach material over edges of a main surface of the semiconductor die facing the die attach material is less than about 200 micrometers.

公开(公告)号：US20210013132A1

公开(公告)日：2021-01-14

申请号：US17036271

申请日：2020-09-29

Applicant: Infineon Technologies AG

Inventor： Joachim Mahler ,  Giovanni Ragasa Garbin ,  Chen Wen Lee ,  Benjamin Reichert ,  Peter Strobel

IPC: H01L23/495 ,  H01L23/00

Abstract: A semiconductor device includes a carrier, a power semiconductor die that includes first and second opposite facing main surfaces, a side surface extending from the first main surface to the second main surface, and first and second electrodes disposed on the first and second main surfaces, respectively, a die attach material arranged between the carrier and the first electrode, wherein the die attach material forms a fillet at the side surface of the power semiconductor die, wherein a fillet height of the fillet is less than about 95% of a height of the power semiconductor die, wherein the height of the power semiconductor die is a length of the side surface, and wherein a maximum extension of the die attach material over edges of a main surface of the power semiconductor die facing the die attach material is less than about 200 micrometers.

公开(公告)号：US10832992B2

公开(公告)日：2020-11-10

申请号：US16518351

申请日：2019-07-22

Applicant: Infineon Technologies AG

Inventor： Joachim Mahler ,  Giovanni Ragasa Garbin ,  Chen Wen Lee ,  Benjamin Reichert ,  Peter Strobel

IPC: H01L21/00 ,  H01L29/40 ,  H01L23/495 ,  H01L23/00

Abstract: A method includes providing a carrier, depositing a die attach material on the carrier, and arranging a semiconductor die on the die attach material, wherein a main surface of the semiconductor die facing the die attach material at least partly contacts the die attach material, wherein immediately after arranging the semiconductor die on the die attach material, a first maximum extension of the die attach material over edges of the main surface is less than about 100 micrometers.