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公开(公告)号：US20200027752A1
公开(公告)日：2020-01-23
申请号：US16588447
申请日：2019-09-30
Applicant: Infineon Technologies AG
Inventor： Andre Wedi , Guido Boenig , Niels Oeschler , Christian Stahlhut
IPC: H01L21/48 , H01L23/373 , H01L23/00 , H01L23/492
Abstract: A method includes placing a substrate on a first curved surface of a first bending tool, using a second bending tool with a second surface to apply pressure to the substrate, thereby pressing the substrate onto the first curved surface and bending the substrate, and removing the bended substrate from the first bending tool.
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2.发明申请METHOD FOR PRODUCING A DRIED PASTE LAYER, METHOD FOR PRODUCING A SINTERING CONNECTION, METHOD FOR PRODUCING A POWER SEMICONDUCTOR MODULE AND CONTINUOUS INSTALLATION 审中-公开用于生产干粉末层的方法，用于生产烧结连接的方法，用于生产功率半导体模块的方法和连续的安装公开(公告)号：US20150257280A1
公开(公告)日：2015-09-10
申请号：US14639635
申请日：2015-03-05
Applicant: Infineon Technologies AG
Inventor： Alexander Ciliox , Nicolas Heuck , Christian Stahlhut
CPC classification number: H05K3/3484 , B05D3/0254 , B05D5/00 , B23K1/0016 , B23K1/005 , B23K1/008 , B23K1/20 , B23K31/02 , B23K35/02 , B23K35/0238 , B23K35/025 , B23K35/30 , B23K35/3006 , B23K35/3013 , B23K2101/42 , H01L24/75 , H01L24/83 , H01L2224/75251 , H01L2224/75252 , H01L2224/75501 , H01L2224/83101 , H01L2224/8384 , H01L2924/13055 , H01L2924/13091 , H05K1/0306 , H05K3/1283 , H05K3/341 , H05K3/3494 , H05K2203/04 , H05K2203/111 , H05K2203/1545 , H01L2924/00
Abstract: One aspect of the invention relates to producing a dried paste layer on a joining partner. For this purpose, a joining partner having a contact surface is provided, to which contact surface a paste is applied. Furthermore, a heating device is provided, which is preheated to a preheating temperature. The paste applied to the contact surface is then dried during a drying phase, such that a dried paste layer arises from the paste. In the drying phase, the joining partner and the preheated heating device are at a distance of at most 5 mm.
Abstract translation: 本发明的一个方面涉及在接合配偶体上制备干糊层。 为此，提供具有接触表面的接合对象，其上施加有粘合剂的接触表面。 此外，提供加热装置，其被预热到预热温度。 然后将施加到接触表面的糊剂在干燥阶段中干燥，从而使糊状物从糊状物产生。 在干燥阶段，接合对象和预热加热装置的距离最大为5mm。
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公开(公告)号：US10475668B2
公开(公告)日：2019-11-12
申请号：US16021619
申请日：2018-06-28
Applicant: Infineon Technologies AG
Inventor： Andre Wedi , Guido Boenig , Niels Oeschler , Christian Stahlhut
IPC: H01L21/48 , H01L23/373 , H01L23/00 , H01L23/492
Abstract: A method includes placing a semiconductor substrate on a first curved surface of a first bending tool, using a second bending tool with a second surface to apply pressure to the semiconductor substrate, thereby pressing the semiconductor substrate onto the first curved surface and bending the semiconductor substrate, and removing the bended semiconductor substrate from the first bending tool.
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公开(公告)号：US20190006193A1
公开(公告)日：2019-01-03
申请号：US16021619
申请日：2018-06-28
Applicant: Infineon Technologies AG
Inventor： Andre Wedi , Guido Boenig , Niels Oeschler , Christian Stahlhut
IPC: H01L21/48 , H01L23/373 , H01L23/492
CPC classification number: H01L21/4878 , H01L23/3735 , H01L23/492 , H01L24/75 , H01L2224/79315 , H01L2924/3511
Abstract: A method includes placing a semiconductor substrate on a first curved surface of a first bending tool, using a second bending tool with a second surface to apply pressure to the semiconductor substrate, thereby pressing the semiconductor substrate onto the first curved surface and bending the semiconductor substrate, and removing the bended semiconductor substrate from the first bending tool.
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公开(公告)号：US11211303B2
公开(公告)日：2021-12-28
申请号：US16701790
申请日：2019-12-03
Applicant: Infineon Technologies AG
Inventor： Jens Peter Konrath , Jochen Hilsenbeck , Dethard Peters , Paul Salmen , Tobias Schmidutz , Vice Sodan , Christian Stahlhut , Juergen Steinbrenner , Bernd Zippelius
IPC: H01L29/417 , H01L23/31 , H01L29/06 , H01L29/78 , H01L29/739 , H01L29/861 , H01L23/29 , H01L29/16
Abstract: An embodiment of a semiconductor device includes a semiconductor body having a first main surface. The semiconductor body includes an active device area and an edge termination area at least partly surrounding the active device area. The semiconductor device further includes a contact electrode on the first main surface and electrically connected to the active device area. The semiconductor device further includes a passivation structure on the edge termination area and laterally extending into the active device area. The semiconductor device further includes an encapsulation structure on the passivation structure and covering a first edge of the passivation structure above the contact electrode.
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Patent Agency Ranking
公开(公告)号：US09978711B2
公开(公告)日：2018-05-22
申请号：US15378993
申请日：2016-12-14
Applicant: Infineon Technologies AG
Inventor： Gopalakrishnan Trichy Rengarajan , Christian Stahlhut
CPC classification number: H01L24/83 , H01L21/4825 , H01L21/4853 , H01L23/3735 , H01L23/488 , H01L24/05 , H01L24/06 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/92 , H01L24/94 , H01L2224/05624 , H01L2224/06131 , H01L2224/2745 , H01L2224/27452 , H01L2224/27462 , H01L2224/27464 , H01L2224/2747 , H01L2224/29124 , H01L2224/29139 , H01L2224/29144 , H01L2224/29163 , H01L2224/29169 , H01L2224/29173 , H01L2224/29176 , H01L2224/29178 , H01L2224/32227 , H01L2224/32245 , H01L2224/40137 , H01L2224/40177 , H01L2224/40195 , H01L2224/40245 , H01L2224/45014 , H01L2224/48091 , H01L2224/48105 , H01L2224/48137 , H01L2224/48177 , H01L2224/48195 , H01L2224/48227 , H01L2224/48245 , H01L2224/48472 , H01L2224/73263 , H01L2224/73265 , H01L2224/75301 , H01L2224/83193 , H01L2224/83203 , H01L2224/83439 , H01L2224/83444 , H01L2224/83469 , H01L2224/83473 , H01L2224/83476 , H01L2224/83478 , H01L2224/83895 , H01L2224/85181 , H01L2224/92246 , H01L2224/92247 , H01L2224/94 , H01L2924/00014 , H01L2924/00012 , H01L2224/27 , H01L2924/01076 , H01L2224/45099 , H01L2224/37099 , H01L2224/84 , H01L2224/32225 , H01L2224/48247
Abstract: A semiconductor chip includes a semiconductor body having a lower side with a lower chip metallization applied thereto. A first contact metallization layer is produced on the lower chip metallization. A second contact metallization layer is produced on a metal surface of a substrate. The semiconductor chip and the substrate are pressed onto one another for a pressing time so that the first and second contact metallization layers bear directly and extensively on one another. During the pressing time, the first contact metallization layer is kept continuously at temperatures which are lower than the melting temperature of the first contact metallization layer. The second contact metallization layer is kept continuously at temperatures which are lower than the melting temperature of the second contact metallization layer during the pressing time. After the pressing together, the first and second contact metallization layers have a total thickness less than 1000 nm.
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公开(公告)号：US20150333034A1
公开(公告)日：2015-11-19
申请号：US14708964
申请日：2015-05-11
Applicant: Infineon Technologies AG
Inventor： Daniel Bolowski , Achim Froemelt , Christian Kersting , Christian Stahlhut
CPC classification number: B22F1/0074 , B23K1/0016 , B23K1/203 , H01L21/00 , H01L24/29 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/83 , H01L24/85 , H01L2224/29026 , H01L2224/32225 , H01L2224/37124 , H01L2224/37147 , H01L2224/40095 , H01L2224/40225 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/73265 , H01L2224/83065 , H01L2224/83359 , H01L2224/8384 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2224/92246 , H01L2224/92247 , H01L2924/00014 , H01L2924/01029 , H01L2924/13055 , H01L2924/13091 , H01L2924/19107 , H01L2924/00 , H01L2224/45015 , H01L2924/207
Abstract: A method includes providing a subassembly having a circuit carrier with a first metallic surface portion, a first joining partner, which is integrally connected to the first metallic surface portion by means of a first connecting layer, and a second metallic surface portion. In a heat treatment, the second metallic surface portion is held uninterruptedly at temperatures which are higher than a minimum heat-treatment temperature of at least 300° C. Moreover, a second joining partner is provided. A fixed connection is produced between the second joining partner and the subassembly in that the second joining partner is integrally connected to the subassembly following completion of the heat treatment on the second surface portion.
Abstract translation: 一种方法包括提供具有第一金属表面部分的电路载体的子组件，通过第一连接层与第一金属表面部分一体地连接的第一接合配合体和第二金属表面部分。 在热处理中，第二金属表面部分在高于至少300℃的最小热处理温度的温度下不间断地保持。此外，提供第二接合对象。 在第二接合伙伴和子组件之间产生固定连接，因为在第二表面部分上的热处理完成之后，第二接合伙伴一体地连接到子组件。
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公开(公告)号：US20200185297A1
公开(公告)日：2020-06-11
申请号：US16701790
申请日：2019-12-03
Applicant: Infineon Technologies AG
Inventor： Jens Peter Konrath , Jochen Hilsenbeck , Dethard Peters , Paul Salmen , Tobias Schmidutz , Vice Sodan , Christian Stahlhut , Juergen Steinbrenner , Bernd Zippelius
IPC: H01L23/31 , H01L29/417 , H01L29/06 , H01L29/861 , H01L29/78 , H01L29/739
Abstract: An embodiment of a semiconductor device includes a semiconductor body having a first main surface. The semiconductor body includes an active device area and an edge termination area at least partly surrounding the active device area. The semiconductor device further includes a contact electrode on the first main surface and electrically connected to the active device area. The semiconductor device further includes a passivation structure on the edge termination area and laterally extending into the active device area. The semiconductor device further includes an encapsulation structure on the passivation structure and covering a first edge of the passivation structure above the contact electrode.
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公开(公告)号：US10600658B2
公开(公告)日：2020-03-24
申请号：US16588447
申请日：2019-09-30
Applicant: Infineon Technologies AG
Inventor： Andre Wedi , Guido Boenig , Niels Oeschler , Christian Stahlhut
IPC: H01L21/48 , H01L23/373 , H01L23/492 , H01L23/00
Abstract: A method includes placing a substrate on a first curved surface of a first bending tool, using a second bending tool with a second surface to apply pressure to the substrate, thereby pressing the substrate onto the first curved surface and bending the substrate, and removing the bended substrate from the first bending tool.
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公开(公告)号：US09925588B2
公开(公告)日：2018-03-27
申请号：US14708964
申请日：2015-05-11
Applicant: Infineon Technologies AG
Inventor： Daniel Bolowski , Achim Froemelt , Christian Kersting , Christian Stahlhut
CPC classification number: B22F1/0074 , B23K1/0016 , B23K1/203 , H01L21/00 , H01L24/29 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/83 , H01L24/85 , H01L2224/29026 , H01L2224/32225 , H01L2224/37124 , H01L2224/37147 , H01L2224/40095 , H01L2224/40225 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/73265 , H01L2224/83065 , H01L2224/83359 , H01L2224/8384 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2224/92246 , H01L2224/92247 , H01L2924/00014 , H01L2924/01029 , H01L2924/13055 , H01L2924/13091 , H01L2924/19107 , H01L2924/00 , H01L2224/45015 , H01L2924/207
Abstract: A method includes providing a subassembly having a circuit carrier with a first metallic surface portion, a first joining partner, which is integrally connected to the first metallic surface portion by means of a first connecting layer, and a second metallic surface portion. In a heat treatment, the second metallic surface portion is held uninterruptedly at temperatures which are higher than a minimum heat-treatment temperature of at least 300° C. Moreover, a second joining partner is provided. A fixed connection is produced between the second joining partner and the subassembly in that the second joining partner is integrally connected to the subassembly following completion of the heat treatment on the second surface portion.
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