MULTI-DIE PANEL-LEVEL HIGH PERFORMANCE COMPUTING COMPONENTS

    公开(公告)号:US20240030204A1

    公开(公告)日:2024-01-25

    申请号:US17871413

    申请日:2022-07-22

    Abstract: Panel-level high performance computing (HPC) computing architectures and methods for making the same are disclosed. Panel architectures with and without glass cores comprise dielectric layers with interconnect structures (vias, conductive traces) to translate die-level pinouts arranged at a fine pitch to panel-level pinouts arranged at a coarser pitch. Local interconnects and local interconnect components provide for electrical communication between integrated circuit dies in a panel. Coreless panel architectures can comprise a glass reinforcement layer to provide additional mechanical stiffness. The glass reinforcement layer can have interconnect structures and a local interconnect component. Panel embodiments with a glass core or glass reinforcement layer can comprise waveguides and channel a liquid coolant therethrough, and can further comprise photonic integrated circuits. Panel-level manufacturing techniques can enable panels having dimensions larger (e.g., greater than 300 mm) than components fabricated using wafer-level manufacturing techniques.

    Hybrid fine line spacing architecture for bump pitch scaling

    公开(公告)号:US11694898B2

    公开(公告)日:2023-07-04

    申请号:US16363688

    申请日:2019-03-25

    CPC classification number: H01L21/2815 H01L21/4853 H01L24/17 H01L2224/17051

    Abstract: Embodiments disclosed herein include electronic packages and methods of forming such packages. In an embodiment, an electronic package comprises a package substrate, a first die over the package substrate, the first die having a first bump pitch, a second die over the package substrate, the second die having a second bump pitch that is greater than the first bump pitch, and a plurality of conductive traces over the package substrate, the plurality of conductive traces electrically coupling the first die to the second die. In an embodiment, a first end region of the plurality of conductive traces proximate to the first die has a first line space (L/S) dimension, and a second end region of the plurality of conductive traces proximate to the second die has a second L/S dimension. In an embodiment, the second L/S dimension is greater than the first L/S dimension.

    Selective metal deposition by patterning direct electroless metal plating

    公开(公告)号:US11501967B2

    公开(公告)日:2022-11-15

    申请号:US16269357

    申请日:2019-02-06

    Abstract: Embodiments include package substrates and a method of forming the package substrates. A package substrate includes a self-assembled monolayer (SAM) layer over a first dielectric, where the SAM layer includes first end groups and second end groups. The second end groups may include a plurality of hydrophobic moieties. The package substrate also includes a conductive pad on the first dielectric, where the conductive pad has a bottom surface, a top surface, and a sidewall, and where the SAM layer surrounds and contacts a surface of the sidewall of the conductive pad. The hydrophobic moieties may include fluorinated moieties. The conductive pad includes a copper material, where the top surface of the conductive pad has a surface roughness that is approximately equal to a surface roughness of the as-plated copper material. The SAM layer may have a thickness that is approximately 0.1 nm to 20 nm.

    Package architecture with improved via drill process and method for forming such package

    公开(公告)号:US11177234B2

    公开(公告)日:2021-11-16

    申请号:US16017393

    申请日:2018-06-25

    Abstract: Embodiments include a package substrate, a method of forming the package substrate, and a self-assembled monolayers (SAM) layer. The package substrate includes a SAM layer on portions of a conductive pad, where the SAM layer includes light-reflective moieties. The package substrate also includes a via on a surface portion of the conductive pad, and a dielectric on and around the via, the SAM layer, and the conductive pad, where the SAM layer surrounds and contacts a surface of the via. The SAM layer may be an interfacial organic layer. The light-reflective moieties may include a hemicyanine, a cyclic-hemicyanine, an oligothiophene, and/or a conjugated aromatic compound. The SAM layer may include a molecular structure having a first end group of a first monolayer, an intermediate group, a fifth end group of a second monolayer, and one or more of a first and second light-reflective moieties.

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