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公开(公告)号:US12142567B2
公开(公告)日:2024-11-12
申请号:US16387167
申请日:2019-04-17
Applicant: Intel Corporation
Inventor: Xiao Di Sun Zhou , Debendra Mallik , Xiaoying Guo
IPC: H01L23/538 , H01L21/48 , H01L21/683 , H01L23/00 , H01L23/31
Abstract: Embodiments include semiconductor packages and method of forming the semiconductor packages. A semiconductor package includes a plurality of conductive layers over a package substrate. The conductive layers include a first conductive layer and first-level interconnects (FLIs) in the package substrate. The semiconductor package also includes a solder resist that surrounds the FLIs, where the solder resist has a top surface that is substantially coplanar to top surfaces of the FLIs, a bridge coupled directly to the first conductive layer with solder balls, where the first conductive layer is coupled to the FLIs, and a dielectric over the conductive layers, the bridge, and the solder resist of the package substrate. The bridge may be an embedded multi-die interconnect bridge (EMIB). The first conductive layer may include first conductive pads and second conductive pads. The FLIs may include first conductive vias, second conductive vias, diffusion layers, and third conductive pads.
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公开(公告)号:US20240219660A1
公开(公告)日:2024-07-04
申请号:US18089934
申请日:2022-12-28
Applicant: Intel Corporation
Inventor: Bohan Shan , Hongxia Feng , Haobo Chen , Yiqun Bai , Dingying Xu , Eric J.M. Moret , Robert Alan May , Srinivas Venkata Ramanuja Pietambaram , Tarek A. Ibrahim , Gang Duan , Xiaoying Guo , Ziyin Lin , Bai Nie , Kyle Jordan Arrington , Bin Mu
CPC classification number: G02B6/4246 , G02B5/10 , G02B6/4274
Abstract: A semiconductor device and associated methods are disclosed. In one example, the electronic device includes a photonic die and a glass substrate. In selected examples, the semiconductor device includes one or more turning mirrors to direct an optical signal between the photonic die and the glass substrate. Configurations of turning mirrors are provided to improve signal integrity and manufacturability.
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公开(公告)号:US20240219655A1
公开(公告)日:2024-07-04
申请号:US18089916
申请日:2022-12-28
Applicant: Intel Corporation
Inventor: Haobo Chen , Bohan Shan , Bai Nie , Brandon C. Marin , Dingying Xu , Gang Duan , Hongxia Feng , Jeremy D. Ecton , Kristof Darmawikarta , Kyle Jordan Arrington , Srinivas Venkata Ramanuja Pietambaram , Xiaoying Guo , Yiqun Bai , Ziyin Lin
CPC classification number: G02B6/4214 , H01L21/4803 , H01L23/49827
Abstract: A semiconductor device and associated methods are disclosed. In one example, the electronic device includes a photonic die and a glass substrate. In selected examples, the semiconductor device includes one or more turning mirrors to direct an optical signal between the photonic die and the glass substrate. Configurations of turning mirrors are provided to improve signal integrity and manufacturability.
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4.
公开(公告)号:US20240186227A1
公开(公告)日:2024-06-06
申请号:US18061181
申请日:2022-12-02
Applicant: Intel Corporation
Inventor: Haobo Chen , Bohan Shan , Kyle J. Arrington , Kristof Darmawikarta , Gang Duan , Jeremy D. Ecton , Hongxia Feng , Xiaoying Guo , Ziyin Lin , Brandon Christian Marin , Srinivas V. Pietambaram , Dingying Xu
IPC: H01L23/498 , H01L21/48 , H01L23/00 , H01L23/538 , H01L23/64 , H01L25/065 , H05K1/02 , H05K1/03 , H05K1/11 , H05K1/18 , H05K3/46
CPC classification number: H01L23/49822 , H01L21/4857 , H01L21/486 , H01L23/49816 , H01L23/49838 , H01L23/5381 , H01L23/5383 , H01L23/5386 , H01L23/642 , H01L24/16 , H01L24/32 , H01L24/73 , H01L25/0655 , H05K1/0271 , H05K1/0306 , H05K1/113 , H05K1/181 , H05K3/4605 , H01L2224/16235 , H01L2224/32225 , H01L2224/73204 , H01L2924/15174 , H01L2924/157 , H01L2924/15788 , H05K2201/0195
Abstract: In one embodiment, an integrated circuit package substrate includes a core layer comprising a plurality of metal vias electrically coupling a first side of the core layer and a second side of the core layer opposite the first side. The package substrate further includes a build-up layer on the first side of the core layer, the build-up layer comprising metal vias within a dielectric material and electrically connected to the metal vias of the core layer. The dielectric material includes Silicon, Oxygen, and at least one of Boron or Phosphorus.
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公开(公告)号:US20230096835A1
公开(公告)日:2023-03-30
申请号:US17484519
申请日:2021-09-24
Applicant: Intel Corporation
Inventor: Kyle McElhinny , Bohan Shan , Hongxia Feng , Xiaoying Guo , Adam Schmitt , Jacob Vehonsky , Steve Cho , Leonel Arana
IPC: H01L23/00 , H01L21/60 , H01L23/538
Abstract: Methods and apparatus to reduce defects in interconnects between semiconductor dies and package substrates are disclosed. An apparatus includes a substrate and a semiconductor die mounted to the substrate. The apparatus further includes operational bridge bumps to electrically connect the die to a bridge within the substrate. The apparatus also includes dummy bumps adjacent the operational bridge bumps.
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公开(公告)号:US20230095281A1
公开(公告)日:2023-03-30
申请号:US17484499
申请日:2021-09-24
Applicant: Intel Corporation
Inventor: Kyle McElhinny , Hongxia Feng , Xiaoying Guo , Steve Cho , Jung Kyu Han , Changhua Liu , Leonel Arana , Rahul Manepalli , Dingying Xu , Amram Eitan
IPC: H01L23/00 , H01L21/60 , H01L23/488 , H01L23/538
Abstract: Methods and apparatus to reduce defects in interconnects between semiconductor dies and package substrates are disclosed. An apparatus includes a substrate and a semiconductor die mounted to the substrate. The apparatus further includes bumps to electrically couple the die to the substrate. Ones of the bumps have corresponding bases. The bases have a shape that is non-circular.
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公开(公告)号:US20240222243A1
公开(公告)日:2024-07-04
申请号:US18091555
申请日:2022-12-30
Applicant: Intel Corporation
Inventor: Bohan Shan , Haobo Chen , Bai Nie , Srinivas Venkata Ramanuja Pietambaram , Gang Duan , Kyle Jordan Arrington , Ziyin Lin , Hongxia Feng , Yiqun Bai , Xiaoying Guo , Dingying Xu , Kristof Darmawikarta
IPC: H01L23/498 , H01L21/48 , H01L23/15
CPC classification number: H01L23/49822 , H01L21/4857 , H01L23/15 , H01L23/49816 , H01L23/49827 , H01L23/49894 , H01L24/16 , H01L2224/16227
Abstract: An integrated circuit device substrate includes a first glass layer with a redistribution layer mounting region and an integrated circuit device mounting region, wherein a first major surface of the first glass layer is overlain by a first dielectric layer, and wherein the first glass layer includes a first plurality of conductive pillars. A second glass layer is on the redistribution layer mounting region on the first glass layer, wherein the second glass layer includes a second dielectric layer on a second major surface thereof, and wherein the second dielectric layer is bonded to the first dielectric layer on the first major surface of the first glass layer, the second glass layer including a second plurality of conductive pillars electrically interconnected with the first plurality of conductive pillars in the first glass layer.
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公开(公告)号:US20240213169A1
公开(公告)日:2024-06-27
申请号:US18086265
申请日:2022-12-21
Applicant: Intel Corporation
Inventor: Bohan Shan , Haobo Chen , Yiqun Bai , Dingying Xu , Srinivas Venkata Ramanuja Pietambaram , Hongxia Feng , Gang Duan , Xiaoying Guo , Ziyin Lin , Bai Nie , Kyle Jordan Arrington , Jeremy D. Ecton , Brandon C. Marin
IPC: H01L23/538 , H01L21/48 , H01L21/56 , H01L23/15 , H01L23/31 , H01L23/498 , H01L23/64 , H10B80/00
CPC classification number: H01L23/5389 , H01L21/4857 , H01L21/486 , H01L21/565 , H01L23/15 , H01L23/3128 , H01L23/49822 , H01L23/49838 , H01L23/5382 , H01L23/5386 , H01L23/645 , H10B80/00 , H01L24/32
Abstract: An electronic system includes a substrate and a top surface active component die. The substrate includes a glass core layer including a cavity formed through the glass core layer; a glass core layer active component die disposed in the cavity; a first buildup layer contacting a first surface of the glass core layer; a second buildup layer contacting a second surface of the glass core layer; and a mold layer contacting a surface of the first buildup layer. The mold layer includes a mold layer active component die disposed in the mold layer, and the first buildup layer includes electrically conductive interconnect providing electrical continuity between the glass core layer active component die and the mold layer active component die. The top surface active component die is attached to the top surface of the substrate and electrically connected to the mold layer active component die.
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9.
公开(公告)号:US11955448B2
公开(公告)日:2024-04-09
申请号:US16880483
申请日:2020-05-21
Applicant: Intel Corporation
Inventor: Jung Kyu Han , Hongxia Feng , Xiaoying Guo , Rahul N. Manepalli
IPC: H01L23/00 , H01L23/538
CPC classification number: H01L24/14 , H01L23/5381 , H01L24/16 , H01L2224/1403 , H01L2224/16227 , H01L2924/381
Abstract: Embodiments disclosed herein include electronic packages. In an embodiment, an electronic package comprises a package substrate and a bridge substrate embedded in the package substrate. In an embodiment, first pads are over the package substrate, where the first pads have a first pitch, and second pads are over the bridge substrate, where the second pads have a second pitch that is smaller than the first pitch. In an embodiment, a barrier layer is over individual ones of the second pads. In an embodiment, reflown solder is over individual ones of the first pads and over individual ones of the second pads. In an embodiment, a first standoff height of the reflown solder over the first pads is equal to a second standoff height of the reflown solder over the second pads.
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公开(公告)号:US20240112971A1
公开(公告)日:2024-04-04
申请号:US17957359
申请日:2022-09-30
Applicant: Intel Corporation
Inventor: Yiqun Bai , Dingying Xu , Srinivas Pietambaram , Hongxia Feng , Gang Duan , Xiaoying Guo , Ziyin Lin , Bai Nie , Haobo Chen , Kyle Arrington , Bohan Shan
IPC: H01L23/15 , H01L21/02 , H01L23/495
CPC classification number: H01L23/15 , H01L21/02354 , H01L23/49506
Abstract: An integrated circuit (IC) device comprises a substrate comprising a glass core. The glass core comprises a first surface and a second surface opposite the first surface, and a first sidewall between the first surface and the second surface. The glass core may include a conductor within a through-glass via extending from the first surface to the second surface and a build-up layer. The glass cord comprises a plurality of first areas of the glass core and a plurality of laser-treated areas on the first sidewall. A first one of the plurality of laser-treated areas may be spaced away from a second one of the plurality of laser-treated areas. A first area may comprise a first nanoporosity and a laser-treated area may comprise a second nanoporosity, wherein the second nanoporosity is greater than the first nanoporosity.
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