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公开(公告)号:US20200066692A1
公开(公告)日:2020-02-27
申请号:US16344633
申请日:2016-12-14
申请人: INTEL IP CORPORATION
摘要: Package devices (systems and methods for their manufacture) may have an integrated circuit (IC) chip mounted on a top surface of a package substrate of and IC package, and embedded in a mold compound formed onto the top surface. They may also have conductive elements mounted on the top surface of the package substrate, embedded in the mold compound, horizontally disposed at a first vertical sidewall of the package device, and having vertical contact pads exposed at the first vertical sidewall. Conductor material traces of the IC package may electrically couple contacts of the chip to the conductive elements. Traces of the IC package may also electrically couple contacts of the chip to bottom surface contacts of the IC package. The vertical contact pads provide a shorter signal path to another device having vertically mounted surface contacts or opposing contact pads, thus improving signaling to the other device.
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公开(公告)号:US20180358317A1
公开(公告)日:2018-12-13
申请号:US15776051
申请日:2015-12-23
申请人: Intel IP Corporation
IPC分类号: H01L23/00 , H01L23/31 , H01L23/36 , H01L23/552 , H01L23/433 , H01L21/56 , H01L23/498 , H01L21/48
摘要: An apparatus is described that includes a redistribution layer and a semiconductor die on the redistribution layer. An electrically conductive layer resides over the semiconductor die. A compound mold resides over the electrically conductive layer.
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公开(公告)号:US20180331053A1
公开(公告)日:2018-11-15
申请号:US15776474
申请日:2015-12-21
申请人: Intel IP Corporation
发明人: Christian GEISSLER , Sven ALBERS , Georg SEIDEMANN , Andreas WOLTER , Klaus REINGRUBER , Thomas WAGNER , Marc DITTES
IPC分类号: H01L23/00
摘要: An electrical device includes a redistribution layer structure, an inter-diffusing material contact structure and a vertical electrically conductive structure located between the redistribution layer structure and the inter-diffusing material contact structure. The vertical electrically conductive structure includes a diffusion barrier structure located adjacently to the inter-diffusing material contact structure. Further, the diffusion barrier structure and the redistribution layer structure comprise different lateral dimensions.
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公开(公告)号:US20180204831A1
公开(公告)日:2018-07-19
申请号:US15743996
申请日:2015-09-14
申请人: Intel IP Corporation
IPC分类号: H01L27/02 , H01L23/00 , H01L23/48 , H01L25/065 , H01L25/18
CPC分类号: H01L27/0296 , H01L23/147 , H01L23/481 , H01L23/49816 , H01L23/49827 , H01L23/60 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/17 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/81 , H01L25/0655 , H01L25/105 , H01L25/18 , H01L27/0255 , H01L28/00 , H01L2224/02166 , H01L2224/02372 , H01L2224/0401 , H01L2224/04042 , H01L2224/05548 , H01L2224/0557 , H01L2224/12105 , H01L2224/13007 , H01L2224/13024 , H01L2224/131 , H01L2224/16145 , H01L2224/16146 , H01L2224/16235 , H01L2224/16237 , H01L2224/16238 , H01L2224/17181 , H01L2224/24137 , H01L2224/32245 , H01L2224/48091 , H01L2224/48106 , H01L2224/48108 , H01L2224/48137 , H01L2224/48145 , H01L2224/48157 , H01L2224/73253 , H01L2224/73265 , H01L2224/81815 , H01L2225/1023 , H01L2225/1041 , H01L2225/1058 , H01L2924/00014 , H01L2924/10253 , H01L2924/10271 , H01L2924/14 , H01L2924/15192 , H01L2924/15311 , H01L2924/15321 , H01L2924/15331 , H01L2924/19107 , H01L2924/014 , H01L2224/45099
摘要: An apparatus including an electrostatic discharge circuit including a first circuit portion coupled beneath a die contact pad of an integrated circuit die and a second circuit portion in an interposer separate from the integrated circuit die, the interposer including a first contact point coupled to the contact pad of the integrated circuit die and a second contact point operable for connection to an external source. A method including forming an integrated circuit die including a first electrostatic discharge structure beneath a contact pad of the die; and coupling the die to an interposer including an interposer contact and a second electrostatic discharge structure, wherein a signal at the contact pad of the die is operable to be routed through the interposer.
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公开(公告)号:US20200273832A1
公开(公告)日:2020-08-27
申请号:US16871325
申请日:2020-05-11
申请人: Intel IP Corporation
IPC分类号: H01L23/00 , H01L23/433 , H01L21/56 , H01L23/552 , H01L21/48 , H01L23/31 , H01L23/36 , H01L23/498
摘要: An apparatus is described that includes a redistribution layer and a semiconductor die on the redistribution layer. An electrically conductive layer resides over the semiconductor die. A compound mold resides over the electrically conductive layer.
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公开(公告)号:US20200176436A1
公开(公告)日:2020-06-04
申请号:US15776378
申请日:2015-12-23
申请人: Intel IP Corporation
IPC分类号: H01L25/00 , H01L25/065
摘要: An apparatus is described that includes a semiconductor die package. The semiconductor die package includes a semiconductor die package substrate having a top side and a bottom side. The semiconductor die package includes I/O balls on the bottom side of the semiconductor die package substrate. The I/O balls are to mount to a planar board. The semiconductor die package includes a first semiconductor die mounted on the bottom side of the semiconductor die package substrate. The first semiconductor die is vertically located between the bottom side of the semiconductor die package substrate and a second semiconductor die that is a part of the semiconductor die package.
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公开(公告)号:US20190393191A1
公开(公告)日:2019-12-26
申请号:US16464213
申请日:2016-12-27
申请人: Intel IP Corporation
IPC分类号: H01L25/065 , H01L23/48 , H01L25/00 , H01L21/768
摘要: Embodiments may include an IC having an active substrate containing devices, and a bulk substrate, separated by an oxide layer or an etching stop layer. The IC may be partially thinned from a backside of the bulk substrate to create a cavity, while maintaining the dicing streets and/or the edges of the bulk substrate without being thinned. The cavity may be surrounded by a first edge and a second edge of the bulk substrate. An additional IC may be placed within the cavity of the bulk substrate to form a stacking IC with a reduced height. The ICs of the stacking IC may be electronically coupled using TSVs embedded within the active substrate of the ICs. Other embodiments may be described and/or claimed.
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8.
公开(公告)号:US20190214369A1
公开(公告)日:2019-07-11
申请号:US16325970
申请日:2016-09-28
申请人: Intel IP Corporation
IPC分类号: H01L25/065 , H01L23/498
CPC分类号: H01L25/0657 , H01L23/00 , H01L23/31 , H01L23/49816 , H01L24/16 , H01L24/24 , H01L24/48 , H01L24/73 , H01L29/0657 , H01L2224/05 , H01L2224/13025 , H01L2224/16227 , H01L2224/24051 , H01L2224/24147 , H01L2224/244 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48148 , H01L2224/48227 , H01L2224/73204 , H01L2224/73257 , H01L2224/73259 , H01L2224/73265 , H01L2224/97 , H01L2225/06506 , H01L2225/0651 , H01L2225/06517 , H01L2225/06541 , H01L2225/06544 , H01L2225/06555 , H01L2924/10158 , H01L2924/15311 , H01L2224/81 , H01L2924/00
摘要: In accordance with disclosed embodiments, there are provided methods, systems, and apparatuses for implementing reduced height semiconductor packages for mobile electronics. For instance, there is disclosed in accordance with one embodiment a stacked die package having therein a bottom functional silicon die; a recess formed within the bottom functional silicon die by a thinning etch partially reducing a vertical height of the bottom functional silicon die at the recess; and a top component positioned at least partially within the recess formed within the bottom functional silicon die. Other related embodiments are disclosed.
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公开(公告)号:US20190206833A1
公开(公告)日:2019-07-04
申请号:US15772730
申请日:2015-12-23
申请人: Intel IP Corporation
发明人: Thorsten MEYER , Klaus REINGRUBER , Georg SEIDEMANN , Andreas WOLTER , Christian GEISSLER , Sven ALBERS
IPC分类号: H01L25/065 , H01L23/31 , H01L23/538 , H01L23/00 , H01L23/498 , H01L21/56 , H01L21/48
CPC分类号: H01L25/0652 , H01L21/4853 , H01L21/56 , H01L21/568 , H01L23/3128 , H01L23/48 , H01L23/49827 , H01L23/5389 , H01L24/00 , H01L24/12 , H01L24/19 , H01L24/20 , H01L24/32 , H01L25/065 , H01L2224/04105 , H01L2224/12105 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/73267 , H01L2224/92244 , H01L2225/06548 , H01L2924/15311 , H01L2924/19105 , H01L2924/19106
摘要: Embodiments of the invention include an eWLB or ePLB based PoP device and methods of forming such devices. According to an embodiment, such a device may include a die embedded within a mold layer. A substrate may be directly contacting a surface of the mold layer. Additionally, embodiments of the invention may include a through mold via formed through the mold layer that is electrically coupled to a contact formed on a surface of the substrate that is contacting the mold layer. In order to form such a device, embodiments may include dispensing a molding material over a die positioned on a mold carrier. Thereafter, a substrate may be pressed into the molding material. After curing the molding material, a mold layer may be formed that encases the die and is adhered to the substrate.
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公开(公告)号:US20180331070A1
公开(公告)日:2018-11-15
申请号:US15774906
申请日:2015-12-26
申请人: Intel IP Corporation
发明人: Georg SEIDEMANN , Klaus REINGRUBER , Christian GEISSLER , Sven ALBERS , Andreas WOLTER , Marc DITTES , Richard PATTEN
IPC分类号: H01L25/065 , H01L23/31 , H01L23/538 , H01L23/498 , H01L23/00
CPC分类号: H01L25/0657 , H01L21/561 , H01L21/568 , H01L23/3107 , H01L23/3135 , H01L23/48 , H01L23/49816 , H01L23/5384 , H01L24/19 , H01L24/20 , H01L24/25 , H01L24/81 , H01L24/96 , H01L24/97 , H01L25/0652 , H01L25/50 , H01L2224/04105 , H01L2224/12105 , H01L2224/16235 , H01L2224/16238 , H01L2224/2518 , H01L2224/73259 , H01L2224/81005 , H01L2224/92224 , H01L2224/97 , H01L2225/06524 , H01L2225/06541 , H01L2225/06548 , H01L2924/15311 , H01L2924/18161 , H01L2924/3511 , H01L2224/81
摘要: Embodiments are generally directed to package stacking using chip to wafer bonding. An embodiment of a device includes a first stacked layer including one or more semiconductor dies, components or both, the first stacked layer further including a first dielectric layer, the first stacked layer being thinned to a first thickness; and a second stacked layer of one or more semiconductor dies, components, or both, the second stacked layer further including a second dielectric layer, the second stacked layer being fabricated on the first stacked layer.
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