公开(公告)号：US20170162387A1

公开(公告)日：2017-06-08

申请号：US15177495

申请日：2016-06-09

Applicant: International Business Machines Corporation

Inventor： CHENG-WEI CHENG ,  SANGHOON LEE ,  KUEN-TING SHIU

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/78 ,  H01L29/20

CPC classification number: H01L21/02491 ,  H01L21/02381 ,  H01L21/02436 ,  H01L21/02463 ,  H01L21/02496 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/823431 ,  H01L21/8252 ,  H01L27/0886 ,  H01L29/20 ,  H01L29/267 ,  H01L29/66522 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/7849 ,  H01L29/785 ,  H01L29/7851

Abstract: A method of forming a semiconductor device is provided. The method includes depositing an aluminum-base interlayer on a silicon substrate, the aluminum-base interlayer having a thickness of less than about 100 nanometers; and growing a III-V compound material on the aluminum-base interlayer. The aluminum-base interlayer deposited directly on silicon allows for continuous and planar growth of III-V compound materials on the interlayer, which facilitates the manufacture of high quality electronic devices.

公开(公告)号：US20170207115A1

公开(公告)日：2017-07-20

申请号：US15478793

申请日：2017-04-04

Applicant: International Business Machines Corporation

Inventor： CHENG-WEI CHENG ,  SANGHOON LEE ,  EFFENDI LEOBANDUNG

IPC: H01L21/762 ,  H01L29/78 ,  H01L29/66 ,  H01L29/06 ,  H01L21/02

CPC classification number: H01L21/76283 ,  H01L21/02381 ,  H01L21/02428 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02538 ,  H01L21/02639 ,  H01L21/308 ,  H01L21/76 ,  H01L21/762 ,  H01L21/76272 ,  H01L29/0649 ,  H01L29/0665 ,  H01L29/20 ,  H01L29/66522 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7851

Abstract: A method of making a dual isolation fin comprises applying a mask to a substrate and etching the exposed areas of the substrate to form a mandrel; forming a dielectric layer on the surface of the substrate and adjacent to the mandrel; forming a first epitaxially formed material on the exposed portions of the mandrel; forming a second epitaxially formed material on the first epitaxially formed material; forming a first isolation layer on the dielectric layer and adjacent to the second epitaxially formed material; removing the mask and mandrel after forming the first isolation layer; removing the first epitaxially formed material after removing the mask and mandrel; and forming a second isolation layer.

公开(公告)号：US20170179251A1

公开(公告)日：2017-06-22

申请号：US15293572

申请日：2016-10-14

Applicant: International Business Machines Corporation

Inventor： KARTHIK BALAKRISHNAN ,  POUYA HASHEMI ,  SANGHOON LEE

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/02 ,  H01L29/06

CPC classification number: H01L21/845 ,  H01L21/02381 ,  H01L21/02428 ,  H01L21/02433 ,  H01L21/02538 ,  H01L21/02639 ,  H01L21/30604 ,  H01L21/30612 ,  H01L21/3081 ,  H01L21/31056 ,  H01L27/1211 ,  H01L29/045 ,  H01L29/0673 ,  H01L29/20 ,  H01L29/42392 ,  H01L29/66522 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/6656 ,  H01L29/66742 ,  H01L29/66772 ,  H01L29/6681 ,  H01L29/7853 ,  H01L29/78654 ,  H01L29/78681 ,  H01L29/78696

Abstract: A method for forming a nanowire device comprises depositing a hard mask on portions of a silicon substrate having a orientation wherein the hard mask is oriented in the direction, etching the silicon substrate to form a mandrel having (111) faceted sidewalls; forming a layer of insulator material on the substrate; forming a sacrificial stack comprising alternating layers of sacrificial material and dielectric material disposed on the layer of insulator material and adjacent to the mandrel; patterning and etching the sacrificial stack to form a modified sacrificial stack adjacent to the mandrel and extending from the mandrel; removing the sacrificial material from the modified sacrificial stack to form growth channels; epitaxially forming semiconductor in the growth channels; and etching the semiconductor to align with the end of the growth channels and form a semiconductor stack comprising alternating layers of dielectric material and semiconductor material.

公开(公告)号：US20170170297A1

公开(公告)日：2017-06-15

申请号：US14963446

申请日：2015-12-09

Applicant: International Business Machines Corporation

Inventor： CHENG-WEI CHENG ,  SANGHOON LEE ,  EFFENDI LEOBANDUNG

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/06 ,  H01L29/78 ,  H01L29/20 ,  H01L21/308 ,  H01L21/762

CPC classification number: H01L21/76283 ,  H01L21/02381 ,  H01L21/02428 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02538 ,  H01L21/02639 ,  H01L21/308 ,  H01L21/762 ,  H01L21/76272 ,  H01L29/0649 ,  H01L29/0665 ,  H01L29/20 ,  H01L29/66522 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7851

Abstract: A method of making a dual isolation fin comprises applying a mask to a substrate and etching the exposed areas of the substrate to form a mandrel; forming a dielectric layer on the surface of the substrate and adjacent to the mandrel; forming a first epitaxially formed material on the exposed portions of the mandrel; forming a second epitaxially formed material on the first epitaxially formed material; forming a first isolation layer on the dielectric layer and adjacent to the second epitaxially formed material; removing the mask and mandrel after forming the first isolation layer; removing the first epitaxially formed material after removing the mask and mandrel; and forming a second isolation layer.