公开(公告)号：US5600520A

公开(公告)日：1997-02-04

申请号：US441947

申请日：1995-05-16

申请人： Isamu Aokura ,  Kumio Nago ,  Hitoshi Yamanishi ,  Hiroshi Sakakima ,  Youichi Ohnishi

发明人： Isamu Aokura ,  Kumio Nago ,  Hitoshi Yamanishi ,  Hiroshi Sakakima ,  Youichi Ohnishi

IPC分类号： G11B5/31 ,  G11B5/127 ,  G11B5/147 ,  H01F10/14

CPC分类号： G11B5/147 ,  G11B5/3116 ,  Y10S428/90 ,  Y10T428/1129 ,  Y10T428/24975 ,  Y10T428/265

摘要： In a laminated magnetic head core, Fe--M--N system soft magnetic thin films (M being at least one element selected from the group consisting of Ta, Nb, Zr, and Hf) and non-magnetic insulating films are alternately laminated. Each of the soft magnetic thin films is 0.2-10 .mu.m thick. Each of the non-magnetic insulating films is 10 through 1000 nm thick. One of the soft magnetic thin films shows high magnetic permeability in a different direction from that of an adjacent soft magnetic thin film via the non-magnetic insulating film within a film surface of the soft magnetic thin film.

摘要翻译： 在层叠磁头芯中，交替层叠Fe-M-N系软磁薄膜（M为选自Ta，Nb，Zr和Hf中的至少一种元素）和非磁性绝缘膜。 每个软磁薄膜的厚度为0.2-10μm。 每个非磁性绝缘膜的厚度为10〜1000nm。 一个软磁性薄膜通过软磁性薄膜的膜表面内的非磁性绝缘膜，在与相邻的软磁性薄膜的方向不同的方向上表现出高的磁导率。

公开(公告)号：US5403457A

公开(公告)日：1995-04-04

申请号：US111055

申请日：1993-08-24

申请人： Kumio Nago ,  Isamu Aokura ,  Hitoshi Yamanishi ,  Koichi Osano ,  Hiroshi Sakakima ,  Toshiyuki Suemitsu

发明人： Kumio Nago ,  Isamu Aokura ,  Hitoshi Yamanishi ,  Koichi Osano ,  Hiroshi Sakakima ,  Toshiyuki Suemitsu

IPC分类号： G11B5/147 ,  H01F41/18 ,  H01F41/30 ,  C23C14/35 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  G11B5/147 ,  H01F41/18 ,  H01F41/302 ,  Y10T29/49034

摘要： The method of the invention provides a soft magnetic film having a high saturation magnetic flux density and an anisotropy of high magnetic permeability suitable for use in various types of magnetic heads at a high production yield by use of a sputtering apparatus provided with a sputtering electrode, which has permanent magnets arranged above a target 1 mainly of Fe or Co in such a way that lines of magnetic force 3 generated by said permanent magnets are in parallel to the surface of said target 1 and to the center line of said target 1 and have a magnetic strength pattern symmetric with respect to said center line while the lines of magnetic force to the right of said center line are of a reverse direction to those to the left of said center line.

摘要翻译： 本发明的方法通过使用具有溅射电极的溅射装置，提供了一种具有高饱和磁通密度和高磁导率的各向异性的软磁性膜，其适用于各种类型的磁头，以高产率生产， 其具有主要以Fe或Co布置在目标1上方的永磁体，使得由所述永磁体产生的磁力线3平行于所述目标1的表面和所述目标1的中心线并且具有 相对于所述中心线对称的磁强度图案，而所述中心线右侧的磁力线与所述中心线左侧的磁力线相反。

公开(公告)号：US5429731A

公开(公告)日：1995-07-04

申请号：US86364

申请日：1993-07-06

申请人： Koichi Osano ,  Hiroshi Sakakima ,  Keita Ihara ,  Mitsuo Satomi ,  Kumio Nago ,  Youichi Ohnishi ,  Kunio Tanaka ,  Hitoshi Yamanishi

发明人： Koichi Osano ,  Hiroshi Sakakima ,  Keita Ihara ,  Mitsuo Satomi ,  Kumio Nago ,  Youichi Ohnishi ,  Kunio Tanaka ,  Hitoshi Yamanishi

IPC分类号： G11B5/31 ,  C23C14/00 ,  C23C14/34 ,  H01F10/13 ,  H01F10/14 ,  H01F41/18

CPC分类号： C23C14/0036 ,  C23C14/3414 ,  H01F10/13 ,  H01F10/265

摘要： The present invention relates to a method for forming a layer of isotropic soft magnetic nitride alloy even by means of mass-production apparatus wherein a target size is large in comparison to a distance between a substrate and a target, by using a bias sputtering method wherein a negative bias voltage is continuously applied to a substrate and sputtering is carried out in Ar atmosphere mixed with nitrogen gas or periodically mixed with nitrogen gas. Furthermore, the present invention may include a heat treatment of the soft magnetic nitride alloy layer deposited on the substrate in a temperature of more than 300.degree..degree.C. to less than 800.degree. C. to improve a soft magnetic characteristic.

摘要翻译： 本发明涉及通过使用偏置溅射法，即使通过使用偏置溅射方法，通过大量生产设备形成各向同性软磁性氮化物合金层的方法，其中靶材尺寸比基板和靶材之间的距离大 向基板连续施加负偏压，在与氮气混合的Ar气氛中进行溅射或与氮气周期性地混合。 此外，本发明可以包括在大于300℃至小于800℃的温度下沉积在基板上的软磁性氮化物合金层的热处理以改善软磁特性。

公开(公告)号：US5609739A

公开(公告)日：1997-03-11

申请号：US362778

申请日：1994-12-23

申请人： Isamu Aokura ,  Hitoshi Yamanishi ,  Youichi Ohnishi ,  Tanejiro Ikeda

发明人： Isamu Aokura ,  Hitoshi Yamanishi ,  Youichi Ohnishi ,  Tanejiro Ikeda

IPC分类号： C23C14/35 ,  H01J37/34 ,  C23C14/34

CPC分类号： H01J37/3426 ,  H01J37/3408 ,  H01J37/3452

摘要： A sputtering apparatus for performing sputtering operation by using a rectangular target made of ferromagnetic material, the apparatus includes an electrode in which one first permanent magnet is disposed on each side edge of a front surface of the target, polarities of the first magnets confronting each other with the target interposed between the first magnets are opposite to each other, one second permanent magnet is disposed on each side edge of a rear surface of the target, polarities of the second magnets confronting each other with the target interposed between the second magnets are opposite to each other, and the polarity of each second magnet disposed on the rear surface of the target is the same as that of the first magnet disposed on the front surface of the target.

摘要翻译： 一种用于通过使用由铁磁材料制成的矩形靶进行溅射操作的溅射装置，该装置包括：电极，其中一个第一永磁体设置在靶的前表面的每个侧边缘上，第一磁体彼此面对的极性 夹在第一磁体之间的目标彼此相对，在目标的后表面的每个侧边缘上设置一个第二永磁体，并且夹在第二磁体之间的目标彼此面对的第二磁体的极性相反 并且设置在靶的后表面上的每个第二磁体的极性与设置在靶的前表面上的第一磁体的极性相同。

公开(公告)号：US5512156A

公开(公告)日：1996-04-30

申请号：US265019

申请日：1994-06-24

申请人： Hitoshi Yamanishi ,  Isamu Aokura ,  Toshiyuki Suemitsu ,  Takahiro Takisawa

发明人： Hitoshi Yamanishi ,  Isamu Aokura ,  Toshiyuki Suemitsu ,  Takahiro Takisawa

IPC分类号： C23C14/35 ,  H01J37/34

CPC分类号： H01J37/3455 ,  C23C14/35 ,  H01J37/3408

摘要： A magnetron sputtering electrode assembly which is used in a sputtering system having a rectangular flat-plate target, includes permanent magnets arranged along the longitudinal edges of the target to pass lines of magnetic forces in parallel to the surface of the rectangular flat-plate target, and a driving device for reversing polarity of the magnets to change by 180 degrees the direction of the lines of magnetic force caused by the permanent magnets passing in parallel to the surface of the rectangular flat-plate target.

摘要翻译： 在具有矩形平板靶的溅射系统中使用的磁控溅射电极组件包括沿着靶的纵向边缘布置的永磁体，以平行于矩形平板靶的表面传递磁力线， 以及驱动装置，用于使磁铁的极性反转，使永磁体平行于矩形平板靶的表面产生的磁力线的方向变化180度。

公开(公告)号：US5626727A

公开(公告)日：1997-05-06

申请号：US504516

申请日：1995-07-20

申请人： Hitoshi Yamanishi ,  Isamu Aokura ,  Masahide Yokoyama ,  Takahiro Takisawa

发明人： Hitoshi Yamanishi ,  Isamu Aokura ,  Masahide Yokoyama ,  Takahiro Takisawa

IPC分类号： C23C14/34 ,  C23C14/35 ,  H01J37/34 ,  H01L21/203

CPC分类号： H01J37/347 ,  H01J37/3405

摘要： A sputtering apparatus uses a plurality of rectangular targets to form a thin film on a substrate, and includes a plurality of magnets disposed along both side edges of each target in such a manner that the polarities of adjacent magnets along the side edges of the targets are opposite, and polarities of the magnets confronting each other across the targets are opposite. The surfaces of at least two targets are inclined to a surface of the substrate at an angle not smaller than 30.degree. and not larger than 60.degree..

摘要翻译： 溅射装置使用多个矩形目标在基板上形成薄膜，并且包括沿着目标的两个侧边缘设置的多个磁体，使得沿着靶的侧边缘的相邻磁体的极性为 相反的，并且彼此面对的磁体的极性相反。 至少两个靶的表面以不小于30°并且不大于60°的角度倾斜到基底的表面。

公开(公告)号：US5917682A

公开(公告)日：1999-06-29

申请号：US925385

申请日：1997-09-08

申请人： Hitoshi Yamanishi ,  Isamu Aokura ,  Koichi Osano ,  Yasushi Inoue ,  Fumio Sakai

发明人： Hitoshi Yamanishi ,  Isamu Aokura ,  Koichi Osano ,  Yasushi Inoue ,  Fumio Sakai

IPC分类号： G11B5/187 ,  G11B5/31 ,  G11B5/40 ,  G11B5/23

CPC分类号： G11B5/1878 ,  G11B5/314 ,  G11B5/40 ,  Y10T428/115

摘要： A magnetic head includes a back core made of ferrite and a magnetic alloy film arranged in a vicinity of a magnetic gap and having an average composition expressed by TxMyNz wherein T is Fe or Co; M is at least one metal selected from a group consisting of Nb, Zr, Ta, Hf, Cr, W and Mo; N is nitrogen; and x, y and z are atomic percentages holding 65.ltoreq.x.ltoreq.94, 5.ltoreq.y.ltoreq.25, 0

摘要翻译： 磁头包括由铁氧体制成的背芯和布置在磁隙附近的具有由TxMyNz表示的平均组成的磁性合金膜，其中T是Fe或Co; M是选自Nb，Zr，Ta，Hf，Cr，W和Mo中的至少一种金属; N是氮; 而x，y和z是保持65

公开(公告)号：US08419911B2

公开(公告)日：2013-04-16

申请号：US11339506

申请日：2006-01-26

申请人： Hideki Yamashita ,  Takafumi Okuma ,  Hiroshi Hayata ,  Hitoshi Yamanishi ,  Tadashi Kimura ,  Hirokazu Nakaue

发明人： Hideki Yamashita ,  Takafumi Okuma ,  Hiroshi Hayata ,  Hitoshi Yamanishi ,  Tadashi Kimura ,  Hirokazu Nakaue

IPC分类号： C23C14/06

CPC分类号： C23C14/3414 ,  H01J37/3423

摘要： A deposition apparatus includes a processing chamber internally having a reduced-pressure space for deposition process to be carried out therein, a base material holding member for holding a base material to be subjected to the deposition process, a target support member for supporting a target thereon, and a power supply unit for applying electric power to the target support member to generate a plasma in the reduced-pressure space. In the deposition apparatus, deposition process is carried out by using the target, which has a recess portion in its surface and in which a powder target formed of a powder material is placed in an inner surface of the recess portion. Thus, the in-plane uniformity of deposition rate is improved and a stable film deposition is fulfilled.

摘要翻译： 沉积装置包括内部具有用于在其中进行沉积处理的减压空间的处理室，用于保持要进行沉积处理的基底材料的基材保持构件，用于支撑靶材的靶支撑构件 以及用于向目标支撑构件施加电力以在减压空间中产生等离子体的电源单元。 在沉积装置中，通过使用在其表面上具有凹部的靶，并且由粉末材料形成的粉末靶放置在凹部的内表面中来进行沉积工艺。 因此，提高了沉积速率的面内均匀性，并且实现了稳定的膜沉积。

公开(公告)号：US07814796B2

公开(公告)日：2010-10-19

申请号：US12103763

申请日：2008-04-16

申请人： Masahiro Yamamoto ,  Takeshi Koiwasaki ,  Hitoshi Yamanishi ,  Isao Muragishi ,  Mitsuhiro Yoshinaga

发明人： Masahiro Yamamoto ,  Takeshi Koiwasaki ,  Hitoshi Yamanishi ,  Isao Muragishi ,  Mitsuhiro Yoshinaga

IPC分类号： G01L9/00

CPC分类号： G01L11/02 ,  C23C14/0042 ,  H05H1/0037

摘要： Provided is a partial pressure measuring method and a partial pressure measuring apparatus by which a partial pressure distribution is easily measured in a vacuum chamber. The partial pressure measuring method and the partial pressure measuring apparatus includes: moving a local plasma source dedicated to partial pressure measuring provided in the vacuum chamber, to a location at which the measuring is to be performed; and measuring a partial pressure distribution in the vacuum chamber, by receiving emission of plasma generated by the local plasma source through a window which is formed in a wall part of the vacuum chamber and through which the emission passes, and thereby performing emission spectral analysis on intensity of the emission.

摘要翻译： 提供了一种分压测量方法和分压测量装置，通过该分压测量方法在真空室中容易地测量分压。 分压测量方法和分压测量装置包括：将专用于设置在真空室中的分压测量的局部等离子体源移动到要进行测量的位置; 并且通过接收由局部等离子体源产生的等离子体通过形成在真空室的壁部分中的窗口并发射通过的窗口来测量真空室中的分压分布，从而对 发射强度。

公开(公告)号：US08471367B2

公开(公告)日：2013-06-25

申请号：US13377940

申请日：2010-11-01

申请人： Daishiro Saito ,  Takayuki Kai ,  Takafumi Okuma ,  Hitoshi Yamanishi

发明人： Daishiro Saito ,  Takayuki Kai ,  Takafumi Okuma ,  Hitoshi Yamanishi

IPC分类号： H01L23/48 ,  H01L29/40 ,  H01L23/04 ,  H01L23/52 ,  H01L21/44 ,  H01L21/3205

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2924/14 ,  H01L2924/00

摘要： A semiconductor device includes a second oxide film and a pad electrode on a first oxide film that is formed on a front surface of a semiconductor substrate, a contact electrode and a first barrier layer formed in the second oxide film and connected to the pad electrode, a silicide portion formed between the contact electrode and a through-hole electrode layer and connected to the contact electrode and the first barrier layer, a via hole extending from a back surface of the semiconductor substrate to reach the silicide portion and the second oxide film, a third oxide film formed on a sidewall of the via hole and on the back surface of the semiconductor substrate, and a second barrier layer (H) and a rewiring layer formed inside the via hole and on the back surface of the semiconductor substrate and connected to the silicide portion.

摘要翻译： 半导体器件包括第一氧化物膜上的第二氧化物膜和焊盘电极，所述第一氧化物膜形成在半导体衬底的前表面上，接触电极和形成在第二氧化物膜中并连接到焊盘电极的第一势垒层， 在所述接触电极和通孔电极层之间形成并连接到所述接触电极和所述第一阻挡层的硅化物部分，从所述半导体衬底的背面延伸到达所述硅化物部分和所述第二氧化物膜的通孔， 形成在所述通孔的侧壁上和所述半导体衬底的背面上的第三氧化物膜，以及形成在所述通孔内部和所述半导体衬底的背面上的第二阻挡层（H）和再布线层，并且连接 到硅化物部分。