公开(公告)号：US08716724B2

公开(公告)日：2014-05-06

申请号：US13127328

申请日：2009-11-27

申请人： Norwin von Malm ,  Klaus Streubel ,  Patrick Rode ,  Karl Engl ,  Lutz Höppel ,  Jürgen Moosburger

发明人： Norwin von Malm ,  Klaus Streubel ,  Patrick Rode ,  Karl Engl ,  Lutz Höppel ,  Jürgen Moosburger

IPC分类号： H01L33/62

CPC分类号： H01L33/62 ,  H01L27/156 ,  H01L33/22 ,  H01L33/382 ,  H01L2924/0002 ,  H01L2924/00

摘要： An optoelectronic projection device which generates a predefined image during operation, including a semiconductor body having an active layer that generates electromagnetic radiation and a radiation exit side and is an imaging element of the projection device, wherein, to electrically contact the semiconductor body, a first contact layer and a second contact layer are arranged at a rear side of the semiconductor body, the rear side lying opposite the radiation exit side, and are electrically insulated from one another by a separating layer.

摘要翻译： 一种光电投影装置，其在工作期间产生预定图像，包括具有产生电磁辐射的有源层和辐射出射侧的半导体本体，并且是投影装置的成像元件，其中，与半导体本体电接触， 接触层和第二接触层设置在半导体本体的后侧，后侧与辐射出口侧相对，并且通过分离层彼此电绝缘。

公开(公告)号：US09054016B2

公开(公告)日：2015-06-09

申请号：US13123421

申请日：2009-10-29

申请人： Jürgen Moosburger ,  Norwin von Malm ,  Patrick Rode ,  Lutz Höppel ,  Karl Engl

发明人： Jürgen Moosburger ,  Norwin von Malm ,  Patrick Rode ,  Lutz Höppel ,  Karl Engl

IPC分类号： H01L33/00 ,  H01L27/15 ,  H01L25/16 ,  H01L33/08 ,  H01L33/38

CPC分类号： H01L27/15 ,  H01L25/167 ,  H01L33/005 ,  H01L33/02 ,  H01L33/08 ,  H01L33/382 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

摘要： A radiation-emitting semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, wherein an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region that generates radiation, the active region being arranged between a first semiconductor layer and a second semiconductor layer; the first semiconductor layer is arranged on a side of the active region which faces away from the carrier; the emission region has a recess extending through the active region; the first semiconductor layer in the emission region is electrically conductively connected to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier; and the first connection layer in the protective diode region is electrically conductively connected to the second semiconductor layer.

摘要翻译： 辐射发射半导体芯片包括具有半导体层序列的载体和半导体本体，其中在具有半导体层序列的半导体主体中形成发光区域和保护二极管区域; 所述半导体层序列包括产生辐射的有源区，所述有源区布置在第一半导体层和第二半导体层之间; 第一半导体层布置在有源区的背离载体的一侧; 发射区域具有延伸穿过有源区域的凹部; 发射区域中的第一半导体层导电地连接到第一连接层，其中第一连接层在凹部中从第一半导体层朝向载体延伸; 并且保护二极管区域中的第一连接层与第二半导体层导电连接。

公开(公告)号：US20110260205A1

公开(公告)日：2011-10-27

申请号：US13123421

申请日：2009-10-29

申请人： Jürgen Moosburger ,  Norwin Von Malm ,  Patrick Rode ,  Lutz Höppel ,  Karl Engl

发明人： Jürgen Moosburger ,  Norwin Von Malm ,  Patrick Rode ,  Lutz Höppel ,  Karl Engl

IPC分类号： H01L33/62

CPC分类号： H01L27/15 ,  H01L25/167 ,  H01L33/005 ,  H01L33/02 ,  H01L33/08 ,  H01L33/382 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

摘要： A radiation-emitting semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, wherein an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region that generates radiation, the active region being arranged between a first semiconductor layer and a second semiconductor layer; the first semiconductor layer is arranged on a side of the active region which faces away from the carrier; the emission region has a recess extending through the active region; the first semiconductor layer in the emission region is electrically conductively connected to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier; and the first connection layer in the protective diode region is electrically conductively connected to the second semiconductor layer.

摘要翻译： 辐射发射半导体芯片包括具有半导体层序列的载体和半导体本体，其中在具有半导体层序列的半导体主体中形成发光区域和保护二极管区域; 所述半导体层序列包括产生辐射的有源区，所述有源区布置在第一半导体层和第二半导体层之间; 第一半导体层布置在有源区的背离载体的一侧; 发射区域具有延伸穿过有源区域的凹部; 发射区域中的第一半导体层导电地连接到第一连接层，其中第一连接层在凹部中从第一半导体层朝向载体延伸; 并且保护二极管区域中的第一连接层与第二半导体层导电连接。

公开(公告)号：US20110241031A1

公开(公告)日：2011-10-06

申请号：US13127328

申请日：2009-11-27

申请人： Norwin von Malm ,  Klaus Streubel ,  Patrick Rode ,  Karl Engl ,  Lutz Hoppel ,  Jurgen Moosburger

发明人： Norwin von Malm ,  Klaus Streubel ,  Patrick Rode ,  Karl Engl ,  Lutz Hoppel ,  Jurgen Moosburger

IPC分类号： H01L33/62

CPC分类号： H01L33/62 ,  H01L27/156 ,  H01L33/22 ,  H01L33/382 ,  H01L2924/0002 ,  H01L2924/00

摘要： An optoelectronic projection device which generates a predefined image during operation, including a semiconductor body having an active layer that generates electromagnetic radiation and a radiation exit side and is an imaging element of the projection device, wherein, to electrically contact the semiconductor body, a first contact layer and a second contact layer are arranged at a rear side of the semiconductor body, the rear side lying opposite the radiation exit side, and are electrically insulated from one another by a separating layer.

摘要翻译： 一种光电投影装置，其在工作期间产生预定图像，包括具有产生电磁辐射的有源层和辐射出射侧的半导体本体，并且是投影装置的成像元件，其中，与半导体本体电接触， 接触层和第二接触层设置在半导体本体的后侧，后侧与辐射出口侧相对，并且通过分离层彼此电绝缘。

公开(公告)号：US08866175B2

公开(公告)日：2014-10-21

申请号：US13821554

申请日：2011-08-22

申请人： Karl Engl ,  Markus Maute ,  Andreas Weimar ,  Lutz Hoeppel ,  Patrick Rode ,  Juergen Moosburger ,  Norwin von Malm

发明人： Karl Engl ,  Markus Maute ,  Andreas Weimar ,  Lutz Hoeppel ,  Patrick Rode ,  Juergen Moosburger ,  Norwin von Malm

IPC分类号： H01L33/00 ,  H01L33/62 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/22 ,  H01L33/20

CPC分类号： H01L33/62 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

摘要： An optoelectronic semiconductor chip includes a semiconductor layer sequence and a carrier substrate. A first and a second electrical contact layer are arranged at least in regions between the carrier substrate and the semiconductor layer sequence and are electrically insulated from one another by an electrically insulating layer. A mirror layer is arranged between the semiconductor layer sequence and the carrier substrate. The mirror layer adjoins partial regions of the first electrical contact layer and partial regions of the electrically insulating layer. The partial regions of the electrically insulating layer which adjoin the mirror layer are covered by the second electrical contact layer in such a way that at no point do they adjoin a surrounding medium of the optoelectronic semiconductor chip.

摘要翻译： 光电子半导体芯片包括半导体层序列和载体基板。 第一和第二电接触层至少布置在载体衬底和半导体层序列之间的区域中，并且通过电绝缘层彼此电绝缘。 半导体层序列和载体基板之间布置有镜层。 镜层邻接第一电接触层的部分区域和电绝缘层的部分区域。 邻接镜面层的电绝缘层的部分区域被第二电接触层覆盖，使得它们不会与光电子半导体芯片的周围介质邻接。

公开(公告)号：US20130228819A1

公开(公告)日：2013-09-05

申请号：US13821554

申请日：2011-08-22

申请人： Karl Engl ,  Markus Maute ,  Andreas Weimar ,  Lutz Hoeppel ,  Patrick Rode ,  Juergen Moosburger ,  Norwin von Malm

发明人： Karl Engl ,  Markus Maute ,  Andreas Weimar ,  Lutz Hoeppel ,  Patrick Rode ,  Juergen Moosburger ,  Norwin von Malm

IPC分类号： H01L33/62

CPC分类号： H01L33/62 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

摘要： An optoelectronic semiconductor chip includes a semiconductor layer sequence and a carrier substrate. A first and a second electrical contact layer are arranged at least in regions between the carrier substrate and the semiconductor layer sequence and are electrically insulated from one another by an electrically insulating layer. A mirror layer is arranged between the semiconductor layer sequence and the carrier substrate. The minor layer adjoins partial regions of the first electrical contact layer and partial regions of the electrically insulating layer. The partial regions of the electrically insulating layer which adjoin the mirror layer are covered by the second electrical contact layer in such a way that at no point do they adjoin a surrounding medium of the optoelectronic semiconductor chip.

摘要翻译： 光电子半导体芯片包括半导体层序列和载体基板。 第一和第二电接触层至少布置在载体衬底和半导体层序列之间的区域中，并且通过电绝缘层彼此电绝缘。 半导体层序列和载体基板之间布置有镜层。 次层邻接第一电接触层的部分区域和电绝缘层的部分区域。 邻接镜面层的电绝缘层的部分区域被第二电接触层覆盖，使得它们不会与光电子半导体芯片的周围介质邻接。

公开(公告)号：US08956897B2

公开(公告)日：2015-02-17

申请号：US13598896

申请日：2012-08-30

申请人： Patrick Rode ,  Martin Strassburg ,  Karl Engl ,  Lutz Höppel

发明人： Patrick Rode ,  Martin Strassburg ,  Karl Engl ,  Lutz Höppel

IPC分类号： H01L21/00 ,  H01L21/66 ,  H01L33/38 ,  H01L33/22 ,  H01L33/14 ,  H01L33/00 ,  H01L33/62

CPC分类号： H01L33/382 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/14 ,  H01L33/22 ,  H01L33/62 ,  H01L2224/48

摘要： In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence.

摘要翻译： 在制造光电子部件的方法中，提供具有第一热膨胀系数的生长衬底。 向其施加多层缓冲层序列。 随后沉积具有不同于第一热膨胀系数的第二热膨胀系数的层序列。 它还包括用于发射电磁辐射的有源层。 随后将载体衬底施加在外延沉积层序列上。 去除生长衬底，并且构造多层缓冲层序列以增加电磁辐射的耦合。 最后，用外延沉积层序列进行接触。

公开(公告)号：US20120322186A1

公开(公告)日：2012-12-20

申请号：US13598896

申请日：2012-08-30

申请人： Patrick Rode ,  Martin Strassburg ,  Karl Engl ,  Lutz Höppel

发明人： Patrick Rode ,  Martin Strassburg ,  Karl Engl ,  Lutz Höppel

IPC分类号： H01L33/12

CPC分类号： H01L33/382 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/14 ,  H01L33/22 ,  H01L33/62 ,  H01L2224/48

摘要： In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence.

摘要翻译： 在制造光电子部件的方法中，提供具有第一热膨胀系数的生长衬底。 向其施加多层缓冲层序列。 随后沉积具有不同于第一热膨胀系数的第二热膨胀系数的层序列。 它还包括用于发射电磁辐射的有源层。 随后将载体衬底施加在外延沉积层序列上。 去除生长衬底，并且构造多层缓冲层序列以增加电磁辐射的耦合。 最后，用外延沉积层序列进行接触。

公开(公告)号：US08283191B2

公开(公告)日：2012-10-09

申请号：US12990243

申请日：2009-06-09

申请人： Patrick Rode ,  Martin Strassburg ,  Karl Engl ,  Lutz Höppel

发明人： Patrick Rode ,  Martin Strassburg ,  Karl Engl ,  Lutz Höppel

IPC分类号： H01L21/00 ,  H01L33/22 ,  H01L33/38

CPC分类号： H01L33/382 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/14 ,  H01L33/22 ,  H01L33/62 ,  H01L2224/48

摘要： In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence.

摘要翻译： 在制造光电子部件的方法中，提供具有第一热膨胀系数的生长衬底。 向其施加多层缓冲层序列。 随后沉积具有不同于第一热膨胀系数的第二热膨胀系数的层序列。 它还包括用于发射电磁辐射的有源层。 随后将载体衬底施加在外延沉积层序列上。 去除生长衬底，并且构造多层缓冲层序列以增加电磁辐射的耦合。 最后，用外延沉积层序列进行接触。

公开(公告)号：US20110104836A1

公开(公告)日：2011-05-05

申请号：US12990243

申请日：2009-06-09

申请人： Patrick Rode ,  Martin Strassburg ,  Karl Engl ,  Lutz Höppel

发明人： Patrick Rode ,  Martin Strassburg ,  Karl Engl ,  Lutz Höppel

IPC分类号： H01L33/00

CPC分类号： H01L33/382 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/14 ,  H01L33/22 ,  H01L33/62 ,  H01L2224/48

摘要： In a method for producing an optoelectronic component, a growth substrate having a first coefficient of thermal expansion is provided. A multilayered buffer layer sequence is applied thereto. A layer sequence having a second coefficient of thermal expansion—different than the first coefficient of thermal expansion—is subsequently deposited epitaxially. It furthermore comprises an active layer for emitting electromagnetic radiation. A carrier substrate is subsequently applied on the epitaxially deposited layer sequence. The growth substrate is removed and the multilayered buffer layer sequence is structured in order to increase a coupling-out of electromagnetic radiation. Finally, contact is made with the epitaxially deposited layer sequence.

摘要翻译： 在制造光电子部件的方法中，提供具有第一热膨胀系数的生长衬底。 向其施加多层缓冲层序列。 随后沉积具有不同于第一热膨胀系数的第二热膨胀系数的层序列。 它还包括用于发射电磁辐射的有源层。 随后将载体衬底施加在外延沉积层序列上。 去除生长衬底，并且构造多层缓冲层序列以增加电磁辐射的耦合。 最后，用外延沉积层序列进行接触。