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    Substrate having thin film and method of thin film formation
    5.
    发明授权
    Substrate having thin film and method of thin film formation 有权
    具有薄膜的基板和薄膜形成方法

    公开(公告)号：US09236254B2

    公开(公告)日：2016-01-12

    申请号：US14267090

    申请日：2014-05-01

    Applicant: JOLED INC.

    Inventor： Kenichirou Nishida ,  Tomohiko Oda ,  Yui Saitou

    IPC: H01L21/36 ,  H01L21/02 ,  H01L21/268 ,  H01L29/04 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12

    CPC classification number: H01L21/02675 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02683 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66742 ,  H01L29/66765 ,  H01L29/786

    Abstract: A method of thin film formation includes: preparing a substrate; forming a thin film above the substrate; and crystallizing the thin film by irradiating the thin film with a light beam, in which the crystallizing includes steps of: crystallizing the thin film in a first region into a first crystalline thin film by irradiating the first region while scanning a first light beam relative to the substrate, the first region including at least one of: edge portions of the substrate; and a region through which a cutting line passes when the substrate is cut; and subsequently crystallizing the thin film in a second region into a second crystalline thin film by irradiating at least the second region while scanning a second light beam relative to the substrate, and the thin film has a higher absorption ratio of the second light beam than that of the first crystalline thin film.

    Abstract translation: 薄膜形成方法包括：制备基底; 在衬底上形成薄膜; 以及通过用光束照射所述薄膜来使所述薄膜结晶，其中所述结晶包括以下步骤：通过在扫描第一光束时照射第一区域而将第一区域中的薄膜结晶成第一晶体薄膜 所述基板，所述第一区域包括所述基板的边缘部分中的至少一个; 以及当切割基板时切割线通过的区域; 并且随后通过在扫描第二光束相对于衬底扫描至少第二区域的同时将第二区域中的薄膜结晶成第二晶体薄膜，并且该薄膜具有比第二光束更高的吸收比 的第一晶体薄膜。

    Thin-film device, thin-film device array, and method of manufacturing thin-film device
    6.
    发明授权
    Thin-film device, thin-film device array, and method of manufacturing thin-film device 有权
    薄膜器件，薄膜器件阵列和薄膜器件的制造方法

    公开(公告)号：US09111803B2

    公开(公告)日：2015-08-18

    申请号：US14346989

    申请日：2012-09-26

    Applicant: JOLED INC.

    Inventor： Tomohiko Oda ,  Takahiro Kawashima

    IPC: H01L27/105 ,  H01L27/12 ,  H01L21/02 ,  H01L21/324 ,  H01L21/268

    CPC classification number: H01L27/1222 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02612 ,  H01L21/02683 ,  H01L21/02691 ,  H01L21/268 ,  H01L21/324 ,  H01L27/1229 ,  H01L27/1274 ,  H01L27/1281 ,  H01L27/1285 ,  H01L27/1296

    Abstract: A thin-film device includes: a first device unit having a first gate electrode and a first crystalline silicon thin film located opposite to the first gate electrode; and a second device unit having a second gate electrode and a second crystalline silicon thin film located opposite to the second gate electrode. The first crystalline silicon thin film includes a strip-shaped first area and a second area smaller than the strip-shaped first area in average grain size. The first device unit has, as a channel, at least a part of the strip-shaped first area. The second silicon thin film includes a second crystalline area smaller than the strip-shaped first area in average grain size. The second device unit has the second crystalline area as a channel. The strip-shaped first area includes crystal grains in contact with the second area on each side of the strip-shaped first area.

    Abstract translation: 薄膜器件包括：第一器件单元，具有与第一栅电极相对的第一栅极和第一晶体硅薄膜; 以及第二器件单元，其具有与第二栅电极相对的第二栅极和第二晶体硅薄膜。 第一晶体硅薄膜包括带状第一区域和小于平均晶粒尺寸的带状第一区域的第二区域。 第一装置单元具有作为通道的至少一部分带状第一区域。 第二硅薄膜包括平均晶粒尺寸小于带状第一区域的第二晶体面积。 第二装置单元具有作为通道的第二结晶区域。 带状第一区域包括与带状第一区域的每一侧上的第二区域接触的晶粒。

    ORGANIC EL ELEMENT, ORGANIC EL DISPLAY PANEL, AND ORGANIC EL ELEMENT MANUFACTURING METHOD
    7.
    发明申请
    ORGANIC EL ELEMENT, ORGANIC EL DISPLAY PANEL, AND ORGANIC EL ELEMENT MANUFACTURING METHOD 有权

    公开(公告)号：US20220199930A1

    公开(公告)日：2022-06-23

    申请号：US17557072

    申请日：2021-12-21

    Applicant: JOLED Inc.

    Inventor： Yasuhiro Sekimoto ,  Shinichiro Ishino ,  Toshiyuki Akiyama ,  Tomohiko Oda ,  Muneharu Sato

    IPC: H01L51/50 ,  H01L51/56

    Abstract: An organic EL element including an anode, a cathode, and a light emitting layer between the anode and the cathode. The light emitting layer includes a fluorescent material and a host material. A difference between a lowest unoccupied molecular orbital (LUMO) level of the fluorescent material and a highest occupied molecular orbital (HOMO) level of the fluorescent material is less than or equal to a difference between a LUMO level and a HOMO level of the host material. The LUMO level of the fluorescent material is equal to or higher than the LUMO level of the host material. The HOMO level of the fluorescent material is equal to or higher than the HOMO level of the host material, and a difference in energy level between the HOMO level of the fluorescent material and the HOMO level of the host material is 0.3 eV or less.

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