公开(公告)号：US20170235225A1

公开(公告)日：2017-08-17

申请号：US15501591

申请日：2015-08-04

Applicant: JSR CORPORATION

Inventor： Yuusuke MURATA ,  Kaori SAKAI ,  Yuuki SUEMITSU ,  Tomohiro TAKAMI ,  Shin-ichi OOTA ,  Masatsugu AYABE ,  Mibuko SHIMADA

IPC: G03F7/031 ,  H01L27/146 ,  G03F7/032 ,  C09B57/04 ,  C09B57/00

CPC classification number: G03F7/031 ,  C08F2/44 ,  C08F2/48 ,  C08F265/06 ,  C08F290/061 ,  C09B57/00 ,  C09B57/004 ,  C09B57/04 ,  G02B5/223 ,  G03F7/0007 ,  G03F7/027 ,  G03F7/032 ,  G03F7/033 ,  G03F7/038 ,  G03F7/0388 ,  G03F7/105 ,  H01L27/14621 ,  C08F220/12 ,  C08F212/08 ,  C08F220/40 ,  C08F220/20 ,  C08F220/06 ,  C08F2220/1825 ,  C08F220/14 ,  C08F220/32 ,  C08F2220/185 ,  C08F222/40

Abstract: A coloring composition including: (A) a colorant; (C) a binder resin; (D) a polymerizable compound; and (F) a solvent, whereinthe colorant (A) comprises (A1) a pigment having a structure represented by the following Formula (X), and (A2) an isoindoline pigment, andwherein the solvent (F) comprises (G) at least one member selected from the group consisting of an alcohol, a ketone, and an alkyl lactate: and wherein, in the Formula (X), Ra and Rb each independently represent a monovalent organic group, and p and q each independently represent an integer from 0 to 5.

公开(公告)号：US20170088740A1

公开(公告)日：2017-03-30

申请号：US15374342

申请日：2016-12-09

Applicant: JSR CORPORATION

Inventor： Hiroyuki KOMATSU ,  Takehiko NARUOKA ,  Shinya MINEGISHI ,  Kaori SAKAI ,  Tomoki NAGAI

IPC: C09D125/14 ,  G03F7/11 ,  C09D133/12 ,  G03F7/00

CPC classification number: C09D125/14 ,  C08F220/14 ,  C09D133/06 ,  C09D133/12 ,  G03F7/0002 ,  G03F7/0388 ,  G03F7/11 ,  C08F2220/325 ,  C08F212/08 ,  C08F2220/1841

Abstract: A base film-forming composition includes a compound including a group capable of reacting with Si—OH or Si—H, and a solvent. The base film-forming composition is for forming a base film provided between a layer including a silicon atom and a directed self-assembling film in a directed self-assembly lithography process. The receding contact angle of the base film for pure water is no less than 70° and no greater than 90°. The compound is preferably represented by formula (1). In the formula (1), A represents a linking group having a valency of (m+n); D represents a monovalent organic group having at least 10 carbon atoms; E represents the group capable of reacting with Si—OH or Si—H; and m and n are each independently an integer of 1 to 200. (En-AD)m  (1)

公开(公告)号：US20170248847A1

公开(公告)日：2017-08-31

申请号：US15595030

申请日：2017-05-15

Applicant: JSR CORPORATION

Inventor： Hiroyuki KOMATSU ,  Takehiko NARUOKA ,  Shinya MINEGISHI ,  Kaori SAKAI ,  Tomoki NAGAI

IPC: G03F7/038 ,  H01L21/311 ,  G03F7/039 ,  G03F7/004 ,  C09D153/00 ,  G03F7/20 ,  G03F7/32 ,  G03F7/38 ,  G03F7/11 ,  H01L21/027 ,  G03F7/16

CPC classification number: G03F7/038 ,  B05D3/064 ,  C08L2201/56 ,  C09D125/14 ,  C09D153/00 ,  G03F7/0002 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0048 ,  G03F7/039 ,  G03F7/11 ,  G03F7/16 ,  G03F7/168 ,  G03F7/2006 ,  G03F7/322 ,  G03F7/38 ,  H01L21/027 ,  H01L21/0271 ,  H01L21/0332 ,  H01L21/3065 ,  H01L21/31138

Abstract: A composition for a base of a directed self-assembling film includes a compound including an oxo acid group, and a solvent. The compound is preferably represented by formula (1). A represents an organic group having 10 or more carbon atoms and having a valency of n. B represents an oxo acid group. n is an integer of 1 to 200. In a case where n is 2 or greater, a plurality of Bs are identical or different. AB)n   (1)

公开(公告)号：US20150191829A1

公开(公告)日：2015-07-09

申请号：US14591323

申请日：2015-01-07

Applicant: JSR CORPORATION

Inventor： Hiroyuki KOMATSU ,  Takehiko NARUOKA ,  Shinya MINEGISHI ,  Kaori SAKAI ,  Tomoki NAGAI

IPC: C23F1/02

CPC classification number: C23F1/02 ,  C08F297/02 ,  C09D153/00 ,  C23F1/12 ,  G03F7/0002 ,  H01L21/3081 ,  C08L83/04 ,  C08L25/08

Abstract: A pattern-forming method includes providing a metal-containing film directly or indirectly on a substrate. A directed self-assembling film is provided directly or indirectly on the metal-containing film such that a plurality of phases of the directed self-assembling film is formed. At least a part of the plurality of phases of the directed self-assembling film is removed such that a pattern of the directed self-assembling film is formed. The metal-containing film and the substrate are sequentially etched using the pattern of the directed self-assembling film as a mask.

Abstract translation: 图案形成方法包括直接或间接地在基底上提供含金属的膜。 直接或间接地在含金属膜上提供定向自组装膜，从而形成定向自组装膜的多个相。 定向自组装膜的多个相的至少一部分被去除，从而形成定向自组装膜的图案。 使用定向自组装膜的图案作为掩模，依次蚀刻含金属膜和基板。

公开(公告)号：US20130164695A1

公开(公告)日：2013-06-27

申请号：US13769907

申请日：2013-02-19

Applicant: JSR CORPORATION

Inventor： Yukio NISHIMURA ,  Kaori SAKAI ,  Nobuji MATSUMURA ,  Makoto SUGIURA ,  Atsushi NAKAMURA ,  Gouji WAKAMATSU ,  Yuusuke ANNO

IPC: G03F7/20

CPC classification number: G03F7/0035 ,  G03F7/0397 ,  G03F7/2024 ,  G03F7/2041 ,  G03F7/40

Abstract: A method for forming a pattern includes providing a first positive-working radiation-sensitive resin composition on a substrate to form a first resist layer. The first positive-working radiation-sensitive resin composition includes a crosslinking agent, a polymer containing an acid-unstable group and not containing a crosslinking group, a radiation-sensitive acid generator, and a solvent. The first resist layer is exposed selectively to radiation, and developed to form a first resist pattern. The first resist pattern is made inactive to radiation, or insolubilized in an alkaline developer or in a second positive-working radiation-sensitive resin composition. The second positive-working radiation-sensitive resin composition is provided on the substrate to form a second resist layer. The second resist layer is exposed selectively to radiation, and developed to form a second resist pattern in the space area of the first resist pattern.

Abstract translation: 形成图案的方法包括在基板上提供第一正性辐射敏感树脂组合物以形成第一抗蚀剂层。 第一正性辐射敏感性树脂组合物包含交联剂，含有酸不稳定基团并且不含交联基团的聚合物，辐射敏感性酸产生剂和溶剂。 第一抗蚀剂层选择性地暴露于辐射，并显影以形成第一抗蚀剂图案。 第一抗蚀剂图案对辐射无活性，或在碱性显影剂或第二正性辐射敏感树脂组合物中不溶化。 第二正性辐射敏感性树脂组合物设置在基板上以形成第二抗蚀剂层。 第二抗蚀剂层选择性地暴露于辐射，并显影以在第一抗蚀剂图案的空间区域中形成第二抗蚀剂图案。