公开(公告)号：US20230203229A1

公开(公告)日：2023-06-29

申请号：US18108108

申请日：2023-02-10

Applicant: JSR CORPORATION

Inventor： Miki TAMADA ,  Ryo KUMEGAWA ,  Motohiro SHIRATANI ,  Hiroyuki KOMATSU ,  Ken MARUYAMA ,  Sosuke OSAWA

IPC: C08F297/02 ,  G03F7/00 ,  G03F7/075

CPC classification number: C08F297/026 ,  G03F7/0035 ,  G03F7/0757 ,  C08F2810/40

Abstract: A composition includes a polymer (1) having a partial structure represented by formula (1), and a solvent. X is a hydrogen atom, a halogen atom, a hydroxyl group, an alkyl group having 1 to 5 carbon atoms, a hydroxyalkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms. Y is a monovalent organic group having 1 to 12 carbon atoms and containing a hetero atom or a monovalent inorganic acid group. Z is a linking group represented by —O—, —S—, or —NR—, where R is an organic group having 1 to 20 carbon atoms. R1 and R2 are each independently a hydrogen atom, a halogen atom, or an organic group having 1 to 20 carbon atoms, or the like.

公开(公告)号：US20210181630A1

公开(公告)日：2021-06-17

申请号：US16710277

申请日：2019-12-11

Applicant: JSR CORPORATION

Inventor： Sosuke OSAWA ,  Kosuke TERAYAMA ,  Hajime INAMI ,  Kanako UEDA ,  Atsuto NISHII

IPC: G03F7/004 ,  G03F7/20 ,  G03F7/039 ,  G03F7/11 ,  G03F7/028 ,  G03F7/032 ,  G03F7/16 ,  C08F220/18

Abstract: Disclosed herein is a method for producing a composition for resist top coat layer, the method including: polymerizing a monomer solution containing a fluorine-containing monomer in a presence of a polymerization initiator that cleaves to generate an active species having 7 or more carbon atoms in total to obtain a fluorine-containing resin A; and mixing the fluorine-containing resin A and a solvent.

公开(公告)号：US20230259032A1

公开(公告)日：2023-08-17

申请号：US18138873

申请日：2023-04-25

Applicant: JSR CORPORATION

Inventor： Miki TAMADA ,  Ryo KUMEGAWA ,  Hiroyuki KOMATSU ,  Motohiro SHIRATANI ,  Ken MARUYAMA ,  Sosuke OSAWA

IPC: G03F7/11 ,  C08F112/08 ,  C08F120/14 ,  C09D125/06 ,  C09D133/12

CPC classification number: G03F7/11 ,  C08F112/08 ,  C08F120/14 ,  C09D125/06 ,  C09D133/12 ,  C08F2810/40

Abstract: A composition includes: at least one polymer represented by formula (1), formula (2), or both; and a solvent. A1 and A2 are each independently a structural unit having 2 or more carbon atoms; a plurality of A's are the same or different and a plurality of A2s are the same or different; n1 and n2 are each independently an integer of 2 to 500; R1, R2, and R3 are each independently an organic group having 1 or more carbon atoms, or R1 and R2 taken together represent a ring together with X1, Y1, and P; R1 and R2 are the same or different; X1, Y1, and Y2 are each independently a single bond, —O—, or —NR4—; R4 is an organic group having 1 or more carbon atoms; and Z1 and Z2 are each independently hydrogen or an organic group having 1 to 15 carbon atoms.

公开(公告)号：US20160299432A1

公开(公告)日：2016-10-13

申请号：US15095774

申请日：2016-04-11

Applicant: JSR CORPORATION

Inventor： Taiichi FURUKAWA ,  Sosuke OSAWA

IPC: G03F7/11 ,  G03F7/32 ,  G03F7/20

CPC classification number: G03F7/11 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/2041 ,  G03F7/325

Abstract: Provided is a negative resist pattern-forming method that enables a resist pattern with fewer development defects to be formed while favorable water repellency of the surface of the upper layer film is maintained. A negative resist pattern-forming method includes the steps of: forming a resist film using a radiation-sensitive resin composition; forming an upper layer film on one face of the resist film using a composition for upper layer film formation; subjecting the resist film having the upper layer film formed thereon to liquid immersion lithography; and developing the resist film subjected to the liquid immersion lithography with a developer solution containing an organic solvent, wherein at least one of the radiation-sensitive resin composition and the composition for upper layer film formation contains a fluorine atom.

Abstract translation: 提供一种抗蚀剂图案形成方法，其能够形成具有较少显影缺陷的抗蚀剂图案，同时保持上层膜的表面的有利的拒水性。 负型抗蚀剂图案形成方法包括以下步骤：使用辐射敏感性树脂组合物形成抗蚀剂膜; 使用上层成膜用组合物在抗蚀剂膜的一个面上形成上层膜; 对其上形成有上层膜的抗蚀剂膜进行液浸光刻; 以及使用含有有机溶剂的显影剂溶液进行液浸光刻的抗蚀剂膜，其中至少一种辐射敏感性树脂组合物和上层成膜用组合物含有氟原子。