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公开(公告)号：US06359288B1
公开(公告)日：2002-03-19
申请号：US09064242
申请日：1998-04-22
申请人： Jackie Y. Ying , Zhibo Zhang , Lei Zhang , Mildred S. Dresselhaus
发明人： Jackie Y. Ying , Zhibo Zhang , Lei Zhang , Mildred S. Dresselhaus
IPC分类号： H01L2915
CPC分类号： B82B1/00 , B82Y30/00 , C30B11/00 , C30B29/02 , C30B29/605 , H01L21/31111 , H01L21/76885 , Y10S977/762 , Y10S977/781 , Y10S977/888 , Y10T428/12431 , Y10T428/12486 , Y10T428/1259
摘要： An array of nanowires having a relatively constant diameter and techniques and apparatus for fabrication thereof are described. In one embodiment, a technique for melting a material under vacuum and followed by pressure injection of the molten material into the pores of a porous substrate produces continuous nanowires. In another embodiment, a technique to systematically change the channel diameter and channel packing density of an anodic alumina substrate includes the steps of anodizing an aluminum substrate with an electrolyte to provide an anodic aluminum oxide film having a pore with a wall surface composition which is different than aluminum oxide and etching the pore wall surface with an acid to affect at least one of the surface properties of the pore wall and the pore wall composition.
摘要翻译： 描述了具有相对恒定直径的纳米线阵列及其制造技术和装置。 在一个实施例中，用于在真空下熔化材料并随后将熔融材料压力注入多孔基材的孔中的技术产生连续的纳米线。 在另一个实施例中，系统地改变阳极氧化铝基板的通道直径和通道堆积密度的技术包括以下步骤：用电解液对铝基板进行阳极氧化以提供具有不同壁面组成的孔的阳极氧化铝膜 比氧化铝和用酸蚀刻孔壁表面以影响孔壁和孔壁组成的至少一个表面性质。
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公开(公告)号：US06231744B1
公开(公告)日：2001-05-15
申请号：US09064439
申请日：1998-04-22
申请人： Jackie Y. Ying , Zhibo Zhang , Lei Zhang , Mildred S. Dresselhaus
发明人： Jackie Y. Ying , Zhibo Zhang , Lei Zhang , Mildred S. Dresselhaus
IPC分类号： C25D1104
CPC分类号： B82B1/00 , B82Y30/00 , C30B11/00 , C30B29/02 , C30B29/605 , H01L21/31111 , H01L21/76885 , Y10S977/762 , Y10S977/781 , Y10S977/888 , Y10T428/12431 , Y10T428/12486 , Y10T428/1259
摘要： An array of nanowires having a relativley constant diameter and techniques and apparatus for fabrication thereof are described. In one embodiment, a technique for melting a material under vacuum and followed by pressure injection of the molten material into the pores of a porous substrate produces continuous nanowires. In another embodiment, a technique to systematically change the channel diameter and channel packing density of an anodic alumina substrate includes the steps of anodizing an aluminum substrate with an electrolyte to provide an anodic aluminum oxide film having a pore with a wall surface composition which is different than aluminum oxide and etching the pore wall surface with an acid to affect at least one of the surface properties of the pore wall and the pore wall composition.
摘要翻译： 描述了具有相对恒定直径的纳米线阵列及其制造技术和装置。 在一个实施例中，用于在真空下熔化材料并随后将熔融材料压力注入多孔基材的孔中的技术产生连续的纳米线。 在另一个实施例中，系统地改变阳极氧化铝基板的通道直径和通道堆积密度的技术包括以下步骤：用电解液对铝基板进行阳极氧化以提供具有不同壁面组成的孔的阳极氧化铝膜 比氧化铝和用酸蚀刻孔壁表面以影响孔壁和孔壁组成的至少一个表面性质。
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3.发明授权Thick porous anodic alumina films and nanowire arrays grown on a solid substrate 有权在固体基底上生长的厚多孔阳极氧化铝膜和纳米线阵列公开(公告)号：US07875195B2
公开(公告)日：2011-01-25
申请号：US11832309
申请日：2007-08-01
IPC分类号： H01B13/00
CPC分类号： C23C14/024 , B82Y30/00 , C23C14/16 , C23C14/5873 , C30B7/00 , C30B7/005 , C30B29/605 , H01L35/32 , H01L35/34 , Y10T156/10 , Y10T428/12486 , Y10T428/1259 , Y10T428/24273 , Y10T428/24322 , Y10T428/24917
摘要： The presently disclosed invention provides for the fabrication of porous anodic alumina (PAA) films on a wide variety of substrates. The substrate comprises a wafer layer and may further include an adhesion layer deposited on the wafer layer. An anodic alumina template is formed on the substrate. When a rigid substrate such as Si is used, the resulting anodic alumina film is more tractable, easily grown on extensive areas in a uniform manner, and manipulated without danger of cracking. The substrate can be manipulated to obtain free-standing alumina templates of high optical quality and substantially flat surfaces. PAA films can also be grown this way on patterned and non-planar surfaces. Furthermore, under certain conditions, the resulting PAA is missing the barrier layer (partially or completely) and the bottom of the pores can be readily accessed electrically. The resultant film can be used as a template for forming an array of nanowires wherein the nanowires are deposited electrochemically into the pores of the template. By patterning the electrically conducting adhesion layer, pores in different areas of the template can be addressed independently, and can be filled electrochemically by different materials. Single-stage and multi-stage nanowire-based thermoelectric devices, consisting of both n-type and p-type nanowires, can be assembled on a silicon substrate by this method.
摘要翻译： 目前公开的发明提供了在各种基底上制造多孔阳极氧化铝（PAA）膜。 衬底包括晶片层，并且还可以包括沉积在晶片层上的粘附层。 在基板上形成阳极氧化铝模板。 当使用诸如Si的刚性基材时，所得的阳极氧化铝膜更易于处理，容易在均匀的方式在广泛的区域生长，并且操作而没有开裂的危险。 可以操作基底以获得高光学质量和基本平坦表面的独立氧化铝模板。 PAA膜也可以在图案和非平面表面上生长。 此外，在某些条件下，所得PAA缺少阻挡层（部分或完全），并且孔的底部可以容易地电接触。 所得膜可以用作形成纳米线阵列的模板，其中纳米线电化学沉积到模板的孔中。 通过图案化导电粘合层，可以独立地解决模板的不同区域中的孔，并且可以通过不同的材料电化学填充。 通过这种方法，可以在硅衬底上组装由n型和p型纳米线组成的单级和多级纳米线型热电装置。
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公开(公告)号：US20100021708A1
公开(公告)日：2010-01-28
申请号：US12422747
申请日：2009-04-13
CPC分类号： H01L21/02527 , B82Y30/00 , B82Y40/00 , C01B32/186 , C01B32/194 , C01B2204/02 , C01B2204/04 , C01B2204/22 , C01B2204/32 , H01L21/02381 , H01L21/0242 , H01L21/02425 , H01L21/02488 , H01L21/02491 , H01L21/02502 , H01L21/02664 , H01L29/16 , H01L29/1606 , Y10T428/31786
摘要： A film of single-layer to few-layer graphene is formed by depositing a graphene film via chemical vapor deposition on a surface of a growth substrate. The surface on which the graphene is deposited can be a polycrystalline nickel film, which is deposited by evaporation on a SiO2/Si substrate. A protective support layer is then coated on the graphene film to provide support for the graphene film and to maintain its integrity when it is removed from the growth substrate. The surface of the growth substrate is then etched to release the graphene film and the protective support layer from the growth substrate, wherein the protective support layer maintains the integrity of the graphene film during and after its release from the growth substrate. After being released from the growth substrate, the graphene film and protective support layer can be applied onto an arbitrary target substrate for evaluation or use in any of a wide variety of applications.
摘要翻译： 通过在生长衬底的表面上通过化学气相沉积沉积石墨烯膜来形成单层至几层石墨烯的膜。 石墨烯沉积在其上的表面可以是通过蒸发沉积在SiO 2 / Si衬底上的多晶镍膜。 然后将保护性支撑层涂覆在石墨烯膜上以提供对石墨烯膜的支撑并且当其从生长衬底移除时保持其完整性。 然后蚀刻生长衬底的表面以从生长衬底释放石墨烯膜和保护性支撑层，其中保护性支持层在其从生长衬底释放期间和之后维持石墨烯膜的完整性。 在从生长衬底释放之后，可以将石墨烯膜和保护性支撑层施加到任意目标衬底上以用于评估或用于各种应用中的任何一种。
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公开(公告)号：US20090226361A1
公开(公告)日：2009-09-10
申请号：US12042544
申请日：2008-03-05
申请人： Jessica Campos-Delgado , Mildred S. Dresselhaus , Morinobu Endo , Edgar E. Gracia-Espino , Xiaoting Jia , Jose Manuel Romo-Herrera , Humberto Terrones , Mauricio Terrones
发明人： Jessica Campos-Delgado , Mildred S. Dresselhaus , Morinobu Endo , Edgar E. Gracia-Espino , Xiaoting Jia , Jose Manuel Romo-Herrera , Humberto Terrones , Mauricio Terrones
IPC分类号： D01F9/12
摘要： The nanoribbon structure includes a plurality of thin graphite ribbons having long and highly crystalline structure. A voltage is applied across the length of the thin graphite ribbons to cause current flow so as to increase crystallinity as well as establishing interplanar stacking order and well-defined graphene edges of the thin graphite ribbons.
摘要翻译： 纳米纤维结构包括多个具有长且高度结晶结构的薄的石墨带。 在薄的石墨带的长度上施加电压以引起电流流动，以便提高结晶度，以及建立薄的石墨带的面间堆叠顺序和明确定义的石墨烯边缘。
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6.发明申请THICK POROUS ANODIC ALUMINA FILMS AND NANOWIRE ARRAYS GROWN ON A SOLID SUBSTRATE 有权厚多孔阳极氧化铝膜和固体基底上的纳米阵列公开(公告)号：US20080210662A1
公开(公告)日：2008-09-04
申请号：US11832309
申请日：2007-08-01
CPC分类号： C23C14/024 , B82Y30/00 , C23C14/16 , C23C14/5873 , C30B7/00 , C30B7/005 , C30B29/605 , H01L35/32 , H01L35/34 , Y10T156/10 , Y10T428/12486 , Y10T428/1259 , Y10T428/24273 , Y10T428/24322 , Y10T428/24917
摘要： The presently disclosed invention provides for the fabrication of porous anodic alumina (PAA) films on a wide variety of substrates. The substrate comprises a wafer layer and may further include an adhesion layer deposited on the wafer layer. An anodic alumina template is formed on the substrate. When a rigid substrate such as Si is used, the resulting anodic alumina film is more tractable, easily grown on extensive areas in a uniform manner, and manipulated without danger of cracking. The substrate can be manipulated to obtain free-standing alumina templates of high optical quality and substantially flat surfaces. PAA films can also be grown this way on patterned and non-planar surfaces. Furthermore, under certain conditions the resulting PAA is missing the barrier layer (partially or completely) and the bottom of the pores can be readily accessed electrically. The resultant film can be used as a template for forming an array of nanowires wherein the nanowires are deposited electrochemically into the pores of the template. By patterning the electrically conducting adhesion layer, pores in different areas of the template can be addressed independently, and can be filled electrochemically by different materials. Single-stage and multi-stage nanowire-based thermoelectric devices, consisting of both n-type and p-type nanowires, can be assembled on a silicon substrate by this method.
摘要翻译： 目前公开的发明提供了在各种基底上制造多孔阳极氧化铝（PAA）膜。 衬底包括晶片层，并且还可以包括沉积在晶片层上的粘附层。 在基板上形成阳极氧化铝模板。 当使用诸如Si的刚性基材时，所得的阳极氧化铝膜更易于处理，容易在均匀的方式在广泛的区域生长，并且操作而没有开裂的危险。 可以操作基底以获得高光学质量和基本平坦表面的独立氧化铝模板。 PAA膜也可以在图案和非平面表面上生长。 此外，在某些条件下，所得PAA缺少阻挡层（部分或完全），并且孔的底部可以容易地电接触。 所得膜可以用作形成纳米线阵列的模板，其中纳米线电化学沉积到模板的孔中。 通过图案化导电粘合层，可以独立地解决模板的不同区域中的孔，并且可以通过不同的材料电化学填充。 通过这种方法，可以在硅衬底上组装由n型和p型纳米线组成的单级和多级纳米线型热电装置。
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7.发明授权公开(公告)号：US06627809B1
公开(公告)日：2003-09-30
申请号：US09711160
申请日：2000-11-09
IPC分类号： H01L3512
摘要： A carrier pocket engineering technique used to provide superlattice structures having relatively high values of the three-dimensional thermoelectric figure of merit (Z3DT) is described. Also described are several superlattice systems provided in acordance with the carrier pocket engineering technique. Superlattice structures designed in accordance with this technique include a plurality of alternating layers of at least two different semiconductor materials. First ones of the layers correspond to barrier layers and second ones of the layers correspond to well layers but barrier layers can also work as well layers for some certain carrier pockets and vice-versa. Each of the well layers are provided having quantum well states formed from carrier pockets at various high symmetry points in the Brillouin zone of the structure to provide the superlattice having a relatively high three-dimensional thermoelectric figure of merit.
摘要翻译： 描述了用于提供具有相对高的三维热电品质因数值（Z3DT）的超晶格结构的载体袋工程技术。 还描述了根据载体袋工程技术提供的几个超晶格系统。 根据该技术设计的超晶格结构包括至少两种不同半导体材料的多个交替层。 层中的第一层对应于阻挡层，并且第二层对应于阱层，但是阻挡层也可以对于某些载流子袋也起作用，反之亦然。 提供每个阱层具有由结构的布里渊区域中的各种高对称点处的载流子袋形成的量子阱状态，以提供具有相对较高的三维热电品质因数的超晶格。
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公开(公告)号：US08535553B2
公开(公告)日：2013-09-17
申请号：US12422747
申请日：2009-04-13
CPC分类号： H01L21/02527 , B82Y30/00 , B82Y40/00 , C01B32/186 , C01B32/194 , C01B2204/02 , C01B2204/04 , C01B2204/22 , C01B2204/32 , H01L21/02381 , H01L21/0242 , H01L21/02425 , H01L21/02488 , H01L21/02491 , H01L21/02502 , H01L21/02664 , H01L29/16 , H01L29/1606 , Y10T428/31786
摘要： A film of single-layer to few-layer graphene is formed by depositing a graphene film via chemical vapor deposition on a surface of a growth substrate. The surface on which the graphene is deposited can be a polycrystalline nickel film, which is deposited by evaporation on a SiO2/Si substrate. A protective support layer is then coated on the graphene film to provide support for the graphene film and to maintain its integrity when it is removed from the growth substrate. The surface of the growth substrate is then etched to release the graphene film and the protective support layer from the growth substrate, wherein the protective support layer maintains the integrity of the graphene film during and after its release from the growth substrate. After being released from the growth substrate, the graphene film and protective support layer can be applied onto an arbitrary target substrate for evaluation or use in any of a wide variety of applications.
摘要翻译： 通过在生长衬底的表面上通过化学气相沉积沉积石墨烯膜来形成单层至几层石墨烯的膜。 石墨烯沉积在其上的表面可以是通过蒸发沉积在SiO 2 / Si衬底上的多晶镍膜。 然后将保护性支撑层涂覆在石墨烯膜上以提供对石墨烯膜的支撑并且当其从生长衬底移除时保持其完整性。 然后蚀刻生长衬底的表面以从生长衬底释放石墨烯膜和保护性支撑层，其中保护性支持层在其从生长衬底释放期间和之后维持石墨烯膜的完整性。 在从生长衬底释放之后，可以将石墨烯膜和保护性支撑层施加到任意目标衬底上以用于评估或用于各种应用中的任何一种。
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9.发明授权Thick porous anodic alumina films and nanowire arrays grown on a solid substrate 失效在固体基底上生长的厚多孔阳极氧化铝膜和纳米线阵列公开(公告)号：US07267859B1
公开(公告)日：2007-09-11
申请号：US10303653
申请日：2002-11-25
CPC分类号： C23C14/024 , B82Y30/00 , C23C14/16 , C23C14/5873 , C30B7/00 , C30B7/005 , C30B29/605 , H01L35/32 , H01L35/34 , Y10T156/10 , Y10T428/12486 , Y10T428/1259 , Y10T428/24273 , Y10T428/24322 , Y10T428/24917
摘要： The presently disclosed invention provides for the fabrication of porous anodic alumina (PAA) films on a wide variety of substrates. The substrate comprises a wafer layer and may further include an adhesion layer deposited on the wafer layer. An anodic alumina template is formed on the substrate. When a rigid substrate such as Si is used, the resulting anodic alumina film is more tractable, easily grown on extensive areas in a uniform manner, and manipulated without danger of cracking. The substrate can be manipulated to obtain free-standing alumina templates of high optical quality and substantially flat surfaces PAA films can also be grown this way on patterned and non-planar surfaces. Furthermore, under certain conditions the resulting PAA is missing the barrier layer (partially or completely) and the bottom of the pores can be readily accessed electrically. The resultant film can be used as a template for forming an array of nanowires wherein the nanowires are deposited electrochemically into the pores of the template. By patterning the electrically conducting adhesion layer, pores in different areas of the template can be addressed independently, and can be filled electrochemically by different materials. Single-stage and multi-stage nanowire-based thermoelectric devices, consisting of both n-type and p-type nanowires, can be assembled on a silicon substrate by this method.
摘要翻译： 目前公开的发明提供了在各种基底上制造多孔阳极氧化铝（PAA）膜。 衬底包括晶片层，并且还可以包括沉积在晶片层上的粘附层。 在基板上形成阳极氧化铝模板。 当使用诸如Si的刚性基材时，所得的阳极氧化铝膜更易于处理，容易在均匀的方式在广泛的区域生长，并且操作而没有开裂的危险。 可以操作基底以获得高光学质量的自立式氧化铝模板和基本平坦的表面。也可以在图案化和非平面表面上生长PAA膜。 此外，在某些条件下，所得PAA缺少阻挡层（部分或完全），并且孔的底部可以容易地电接触。 所得膜可以用作形成纳米线阵列的模板，其中纳米线电化学沉积到模板的孔中。 通过图案化导电粘合层，可以独立地解决模板的不同区域中的孔，并且可以通过不同的材料电化学填充。 通过这种方法，可以在硅衬底上组装由n型和p型纳米线组成的单级和多级纳米线型热电装置。
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公开(公告)号：US06452206B1
公开(公告)日：2002-09-17
申请号：US09039602
申请日：1998-03-16
申请人： Theodore C. Harman , Mildred S. Dresselhaus , David L. Spears , Michael P. Walsh , Stephen B. Cronin , Xiangzhong Sun , Takaaki Koga
发明人： Theodore C. Harman , Mildred S. Dresselhaus , David L. Spears , Michael P. Walsh , Stephen B. Cronin , Xiangzhong Sun , Takaaki Koga
IPC分类号： H01L29225
CPC分类号： H01L35/16 , H01L2924/0002 , Y10S257/93 , H01L2924/00
摘要： A superlattice structure for thermoelectric power generation includes m monolayers of a first barrier material alternating with n monolayers of a second quantum well material with a pair of monolayers defining a superlattice period and each of the materials having a relatively smooth interface therebetween. Each of the quantum well layers have a thickness which is less than the thickness of the barrier layer by an amount which causes substantial confinement of conduction carriers to the quantum well layer and the alternating layers provide a superlattice structure having a figure of merit which increases with increasing temperature.
摘要翻译： 用于热电发电的超晶格结构包括与第二量子阱材料的n个单层交替的第一屏障材料的m个单层，其中一对单层限定超晶格周期，并且每个材料之间具有相对平滑的界面。 每个量子阱层的厚度小于阻挡层的厚度，其量导致导电载体对量子阱层的实质性限制，并且交替层提供具有随着 温度升高。
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