公开(公告)号：US20060225655A1

公开(公告)日：2006-10-12

申请号：US11094461

申请日：2005-03-31

申请人： Jacques Faguet ,  Frank Cerio ,  Tsukasa Matsuda ,  Kaoru Yamamoto

发明人： Jacques Faguet ,  Frank Cerio ,  Tsukasa Matsuda ,  Kaoru Yamamoto

IPC分类号： H05H1/24 ,  C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/4401 ,  C23C16/4409 ,  C23C16/45542 ,  C23C16/5096 ,  H01J37/32477

摘要： A plasma enhanced atomic layer deposition (PEALD) method and system, the system including a process chamber and a substrate holder provided within the processing chamber and configured to support a substrate on which a predetermined film will be formed. A first process material supply system is configured to supply a first process material to the process chamber, and a second process material supply system configured to supply a second process material to the process chamber in order to provide a reduction reaction with the first process material to form the predetermined film on the substrate. Also included is a power source configured to couple electromagnetic power to the process chamber to generate a plasma within the process chamber to facilitate the reduction reaction, and a chamber component exposed to the plasma and made from a film compatible material that is compatible with the predetermined film deposited on the substrate.

摘要翻译： 等离子体增强原子层沉积（PEALD）方法和系统，该系统包括设置在处理室内的处理室和衬底保持器，并被配置为支撑将在其上形成预定膜的衬底。 第一处理材料供应系统被配置为将第一处理材料供应到处理室，以及第二处理材料供应系统，其被配置为将第二处理材料供应到处理室，以便提供与第一处理材料的还原反应 在基板上形成预定的膜。 还包括被配置为将电磁功率耦合到处理室以在处理室内产生等离子体以促进还原反应的电源，以及暴露于等离子体并由与薄膜相容的材料制成的室组件，其与预定的 膜沉积在基底上。

公开(公告)号：US20060213438A1

公开(公告)日：2006-09-28

申请号：US11090256

申请日：2005-03-28

申请人： Tadahiro Ishizaka ,  Tsukasa Matsuda ,  Frank Cerio ,  Kaoru Yamamoto

发明人： Tadahiro Ishizaka ,  Tsukasa Matsuda ,  Frank Cerio ,  Kaoru Yamamoto

IPC分类号： C23C16/00

CPC分类号： C23C16/4409 ,  C23C16/4404 ,  C23C16/4412 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/5096

摘要： A plasma enhanced atomic layer deposition (PEALD) system includes a first chamber component coupled to a second chamber component to provide a processing chamber defining an isolated processing space within the processing chamber. A substrate holder is provided within the processing chamber and configured to support a substrate, a first process material supply system is configured to supply a first process material to the processing chamber and a second process material supply system is configured to supply a second process material to the processing chamber. A power source is configured to couple electromagnetic power to the processing chamber, and a sealing assembly interposed between the first and second chamber components. The sealing assembly includes a plurality of sealing members configured to reduce the amount of external contaminants permeating through an interface of the first and second components into the isolated processing space of the processing chamber, wherein the film is formed on the substrate by alternatingly introducing the first process material and the second process material.

摘要翻译： 等离子体增强原子层沉积（PEALD）系统包括耦合到第二室部件的第一室部件，以提供限定处理室内的隔离处理空间的处理室。 衬底保持器设置在处理室内并被配置为支撑衬底，第一处理材料供应系统被配置为将第一处理材料供应到处理室，第二处理材料供应系统被配置为将第二处理材料供应到 处理室。 电源被配置为将电磁功率耦合到处理室，以及插入在第一和第二室部件之间的密封组件。 密封组件包括多个密封构件，其被配置为将渗透通过第一和第二组件的界面的外部污染物的量减少到处理室的隔离处理空间中，其中通过交替地引入第一 工艺材料和第二工艺材料。

公开(公告)号：US20070218704A1

公开(公告)日：2007-09-20

申请号：US11378270

申请日：2006-03-20

申请人： Tadahiro Ishizaka ,  Frank Cerio ,  Jacques Faguet

发明人： Tadahiro Ishizaka ,  Frank Cerio ,  Jacques Faguet

IPC分类号： H01L21/31

CPC分类号： H01L21/76843 ,  C23C16/32 ,  C23C16/36 ,  C23C16/45536 ,  C23C16/482 ,  H01L21/28562

摘要： A method light enhanced atomic layer deposition for forming a film on a substrate. The method includes disposing the substrate in a process chamber of a light enhanced atomic layer deposition (LEALD) system configured to perform a LEALD process; and depositing a film on the substrate using the LEALD process, where the depositing includes (a) exposing the substrate to a first process material, (b) exposing the substrate to a second process material containing a reducing agent and irradiating the substrate with a first light radiation having either no or at least partial temporal overlap with the exposing of the substrate to the second process material, (c) repeating steps (a) and (b) until the desired film has been deposited. According to one embodiment of the invention, the deposited film can be a TaCN film or a TaC film.

摘要翻译： 一种用于在基板上形成薄膜的光增强原子层沉积。 该方法包括将衬底设置在被配置为执行LEALD处理的光增强原子层沉积（LEALD）系统的处理室中; 以及使用LEALD工艺在衬底上沉积膜，其中沉积包括（a）将衬底暴露于第一工艺材料，（b）将衬底暴露于含有还原剂的第二工艺材料上，并用第一 具有或不至少部分时间重叠的光辐射与基板暴露于第二工艺材料，（c）重复步骤（a）和（b），直到所需的膜沉积为止。 根据本发明的一个实施例，沉积膜可以是TaCN膜或TaC膜。

公开(公告)号：US07744735B2

公开(公告)日：2010-06-29

申请号：US10795093

申请日：2004-03-05

申请人： Rodney Lee Robison ,  Jacques Faguet ,  Bruce Gittleman ,  Tugrul Yasar ,  Frank Cerio ,  Jozef Brcka

发明人： Rodney Lee Robison ,  Jacques Faguet ,  Bruce Gittleman ,  Tugrul Yasar ,  Frank Cerio ,  Jozef Brcka

IPC分类号： C23C14/00 ,  C23C14/32 ,  C25B11/00 ,  C25B13/00

CPC分类号： H01L21/76843 ,  C23C14/046 ,  C23C14/345 ,  C23C14/358 ,  H01J37/321 ,  H01J37/34 ,  H01L21/2855 ,  H01L21/32131 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76873 ,  H01L21/76877

摘要： An iPVD apparatus (20) is programmed to deposit material (10) onto semiconductor substrates (21) by cycling between deposition and etch modes within a vacuum chamber (30). Static magnetic fields are kept to a minimum during at least the etch modes, at least less than 150 Gauss, typically less than 50 Gauss, and preferably in the range of 0-10 Gauss. Static magnetic fields during deposition modes may be more than 150 Gauss, in the range of 0-50 Gauss, or preferably 20-30 Gauss, and may be the same as during etch modes or switched between a higher level during deposition modes and a lower level, including zero, during etch modes. Such switching may be by switching electromagnet current or by moving permanent magnets, by translation or rotation. Static magnetic fields are kept to a minimum during at least the etch modes, at least less than 150 Gauss, typically less than 50 Gauss, and preferably in the range of 1-10 Gauss. The modes may operate at different power and pressure parameters. Pressure of more than 50 mTorr are preferred for deposition in a thermalized plasma while pressure of less than a few mTorr is preferred for etching.

摘要翻译： iPVD装置（20）被编程为通过在真空室（30）内的沉积和蚀刻模式之间循环来将材料（10）沉积到半导体衬底（21）上。 至少在蚀刻模式下，静态磁场保持最小，至少小于150高斯，通常小于50高斯，优选在0-10高斯范围内。 在沉积模式期间的静磁场可以大于150高斯，范围为0-50高斯，或优选为20-30高斯，并且可以与蚀刻模式相同或在沉积模式期间在较高水平之间切换， 在蚀刻模式期间包括零。 这种切换可以是通过切换电磁体电流或通过平移或旋转来移动永磁体。 至少在蚀刻模式下，静态磁场保持最小，至少小于150高斯，通常小于50高斯，优选在1-10高斯范围内。 这些模式可以在不同的功率和压力参数下工作。 超过50mTorr的压力优选用于在热化等离子体中沉积，而对于蚀刻来说优选少于几mTorr的压力。

公开(公告)号：US20050211545A1

公开(公告)日：2005-09-29

申请号：US10811326

申请日：2004-03-26

申请人： Frank Cerio ,  Jacques Faguet ,  Bruce Gittleman ,  Rodney Robison

发明人： Frank Cerio ,  Jacques Faguet ,  Bruce Gittleman ,  Rodney Robison

IPC分类号： C23C14/02 ,  C23C14/04 ,  C23C14/34 ,  H01L21/285 ,  H01L21/768

CPC分类号： H01L21/2855 ,  C23C14/025 ,  C23C14/046 ,  C23C14/345 ,  C23C14/3492 ,  H01J37/32706 ,  H01J2237/3327 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76873 ,  H01L2221/1078 ,  H01L2221/1089

摘要： An iPVD system is programmed to deposit uniform material, such as barrier material, into high aspect ratio nano-size features on semiconductor substrates using a process which enhances the sidewall coverage compared to the field and bottom coverage(s) while minimizing or eliminating overhang within a vacuum chamber. The iPVD system is operated at low target power and high pressure >50 mT to sputter material from the target. RF energy is coupled into the chamber to form a high density plasma. A small RF bias (less than a few volts) can be applied to aid in enhancing the coverage, especially at the bottom.

摘要翻译： iPVD系统被编程为使用与场和底部覆盖相比增强侧壁覆盖度的方法将均匀的材料（例如阻挡材料）沉积到半导体衬底上的高纵横比纳米尺寸特征中，同时最小化或消除 一个真空室。 iPVD系统以低目标功率和高压> 50 mT运行，以从目标溅射材料。 RF能量耦合到腔室中以形成高密度等离子体。 可以应用小的RF偏压（小于几伏）来帮助增强覆盖范围，特别是在底部。

公开(公告)号：US20070238279A1

公开(公告)日：2007-10-11

申请号：US11279039

申请日：2006-04-07

申请人： Frank Cerio

发明人： Frank Cerio

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  C23C14/046 ,  C23C14/0641 ,  H01J37/321 ,  H01L21/2855

摘要： An iPVD system uses a high density inductively coupled plasma (ICP) at high pressure of at least 50 mTorr to deposit uniform ultra-thin layer of a tantalum nitride material barrier material onto the sidewalls of high aspect ratio nano-size features on semiconductor substrates, preferably less than 2 nm thick with less than 4 nm in the field areas. The process includes depositing an ultra-thin TaN barrier layer having a high nitrogen concentration that produces high resistivity, preferably at least 1000 micro-ohm-cm. The ultra-thin TaN film is deposited by a low deposition rate process of less than 20 nm/minute, preferably 2-10 nm/min, to produce the high N/Ta ratio layer without nitriding the tantalum target. The layer provides a barrier to copper (Cu) diffusion and a high etch resistant etch-stop layer for subsequent deposition-etch processes.

摘要翻译： iPVD系统在至少50mTorr的高压下使用高密度电感耦合等离子体（ICP），以将均匀的氮化钽材料阻挡材料的超薄层沉积到半导体衬底上的高纵横比纳米尺寸特征的侧壁上， 优选小于2nm厚，场区域小于4nm。 该方法包括沉积具有高氮浓度的超薄TaN阻挡层，其产生高电阻率，优选至少1000微欧姆厘米。 通过小于20nm /分钟，优选2-10nm / min的低沉积速率工艺沉积超薄TaN膜，以产生高N / Ta比例层而不氮化钽靶。 该层为铜（Cu）扩散提供了屏障，并为后续沉积蚀刻工艺提供了高耐蚀刻蚀刻停止层。

公开(公告)号：US20070224793A1

公开(公告)日：2007-09-27

申请号：US11389511

申请日：2006-03-24

申请人： Frank Cerio

发明人： Frank Cerio

IPC分类号： H01L21/44

CPC分类号： H01L21/2855 ,  C23C14/046 ,  C23C14/32 ,  H01L21/76843 ,  H01L21/76877

摘要： A method for performing ionized physical vapor deposition (iPVD) is described, whereby the substrate temperature can be rapidly changed to control a metal deposition process and increase the quality of the metal deposited. In one embodiment, a copper deposition process can be performed.

摘要翻译： 描述了一种用于进行电离物理气相沉积（iPVD）的方法，由此可以快速地改变衬底温度以控制金属沉积过程并提高沉积金属的质量。 在一个实施例中，可以执行铜沉积工艺。

公开(公告)号：US20070235319A1

公开(公告)日：2007-10-11

申请号：US11279066

申请日：2006-04-07

申请人： Frank Cerio

发明人： Frank Cerio

IPC分类号： C23C14/32 ,  C23C14/00

CPC分类号： C23C16/45542 ,  C23C16/45529 ,  C23C16/5096 ,  H01J37/32431 ,  H01J2237/33

摘要： A method and system for performing multiple depositions on a substrate using an improved Ionized Physical Vapor Deposition (IPVD) system that allows IPVD processes and plasma-enhanced processes, such as PEALD and PECVD, to be performed in a single processing chamber. A determination of the state of an in-coming substrate can be made by sensing the substrate automatically or interrogating data relating to the state of the substrate to arrive at the determination. A controller selects and executes a process in response to the determination using a processing apparatus configured to alternatively perform multiple processes in response to commands from the controller.

摘要翻译： 使用改进的电离物理气相沉积（IPVD）系统在基板上进行多次沉积的方法和系统，其允许IPVD工艺和等离子体增强过程如PEALD和PECVD在单个处理室中进行。 可以通过自动检测衬底或询问与衬底的状态相关的数据来进行确定，从而进行入射衬底的状态的确定。 控制器响应于使用配置为响应于来自控制器的命令交替执行多个处理的处理装置来选择并执行处理。

公开(公告)号：US20070235321A1

公开(公告)日：2007-10-11

申请号：US11279064

申请日：2006-04-07

申请人： Frank Cerio

发明人： Frank Cerio

IPC分类号： C23C14/00

CPC分类号： C23C14/046 ,  C23C14/18 ,  C23C14/354

摘要： An iPVD system is programmed to deposit a barrier and/or seed layer using a Ru-containing material into high aspect ratio nano-size features on semiconductor substrates using a process which enhances the sidewall coverage compared to the field and bottom coverage(s) while minimizing or eliminating overhang within an IPVD processing chamber. In the preferred embodiment, an IPVD apparatus having a frusto-conical ruthenium target equipped with a high density ICP source is provided.

摘要翻译： iPVD系统被编程为使用包含Ru的材料在半导体衬底上沉积高纵横比纳米尺寸特征的屏障和/或种子层，使用与场和底部覆盖相比增强侧壁覆盖的过程，而 最小化或消除IPVD处理室内的突出。 在优选实施例中，提供了具有配备有高密度ICP源的截头圆锥形钌靶的IPVD装置。

公开(公告)号：US06755945B2

公开(公告)日：2004-06-29

申请号：US10138049

申请日：2002-05-03

申请人： Tugrul Yasar ,  Glyn Reynolds ,  Frank Cerio ,  Bruce Gittleman ,  Michael Grapperhaus ,  Rodney Robison

发明人： Tugrul Yasar ,  Glyn Reynolds ,  Frank Cerio ,  Bruce Gittleman ,  Michael Grapperhaus ,  Rodney Robison

IPC分类号： C23C1434

CPC分类号： H01L21/76843 ,  C23C14/046 ,  C23C14/345 ,  C23C14/358 ,  H01J37/321 ,  H01J37/34 ,  H01L21/2855 ,  H01L21/32131 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76873 ,  H01L21/76877

摘要： An iPVD apparatus (20) is programmed to deposit material (10) into high aspect ratio submicron features (11) on semiconductor substrates (21) by cycling between deposition and etch modes within a vacuum chamber (30). The modes operate at different power and pressure parameters. Pressure of more than 50 mTorr, for example, is used for sputtering material from a target while pressure of less than a few mTorr, for example, is used to etch. Bias power on the substrate is an order of magnitude higher for etching, producing several hundred volt bias for etching, but only a few tens of volts for deposition. The alternating etching modes remove deposited material that overhangs edges of features on the substrate, removes some of the deposited material from the bottoms (15) of the features, and resputters the removed deposited material onto sidewalls (16) of the features. The substrate (21) is cooled during deposition and etching, and particularly during etching to substantially below 0° C. RF energy is coupled into the chamber (30) to form a high density plasma, with substantially higher RF power coupled during deposition than during etching. The substrate (21) is moved closer to the plasma source during etching than during deposition.

摘要翻译： iPVD装置（20）被编程为通过在真空室（30）内的沉积和蚀刻模式之间循环来将材料（10）沉积到半导体衬底（21）上的高纵横比亚微米特征（11）中。 这些模式在不同的功率和压力参数下工作。 例如，使用超过50mTorr的压力用于从目标溅射材料，例如使用小于几mTorr的压力来蚀刻。 衬底上的偏置功率对于蚀刻而言高出一个数量级，产生几百伏的蚀刻偏压，但只有几十伏的电压用于沉积。 交替的蚀刻模式去除沉积在衬底上的特征边缘的沉积材料，从特征的底部（15）去除一些沉积的材料，并将去除的沉积材料重新计算到特征的侧壁（16）上。 衬底（21）在沉积和蚀刻期间被冷却，特别是在蚀刻期间基本上低于0℃.RF能耦合到腔室（30）中以形成高密度等离子体，在沉积期间具有比在 蚀刻。 在蚀刻期间，衬底（21）比沉积期间更靠近等离子体源。