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公开(公告)号：US20060225655A1
公开(公告)日：2006-10-12
申请号：US11094461
申请日：2005-03-31
申请人： Jacques Faguet , Frank Cerio , Tsukasa Matsuda , Kaoru Yamamoto
发明人： Jacques Faguet , Frank Cerio , Tsukasa Matsuda , Kaoru Yamamoto
CPC分类号： C23C16/45544 , C23C16/4401 , C23C16/4409 , C23C16/45542 , C23C16/5096 , H01J37/32477
摘要： A plasma enhanced atomic layer deposition (PEALD) method and system, the system including a process chamber and a substrate holder provided within the processing chamber and configured to support a substrate on which a predetermined film will be formed. A first process material supply system is configured to supply a first process material to the process chamber, and a second process material supply system configured to supply a second process material to the process chamber in order to provide a reduction reaction with the first process material to form the predetermined film on the substrate. Also included is a power source configured to couple electromagnetic power to the process chamber to generate a plasma within the process chamber to facilitate the reduction reaction, and a chamber component exposed to the plasma and made from a film compatible material that is compatible with the predetermined film deposited on the substrate.
摘要翻译： 等离子体增强原子层沉积（PEALD）方法和系统，该系统包括设置在处理室内的处理室和衬底保持器，并被配置为支撑将在其上形成预定膜的衬底。 第一处理材料供应系统被配置为将第一处理材料供应到处理室，以及第二处理材料供应系统，其被配置为将第二处理材料供应到处理室，以便提供与第一处理材料的还原反应 在基板上形成预定的膜。 还包括被配置为将电磁功率耦合到处理室以在处理室内产生等离子体以促进还原反应的电源，以及暴露于等离子体并由与薄膜相容的材料制成的室组件，其与预定的 膜沉积在基底上。
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公开(公告)号：US08163087B2
公开(公告)日：2012-04-24
申请号：US11094461
申请日：2005-03-31
IPC分类号： C23C16/00
CPC分类号： C23C16/45544 , C23C16/4401 , C23C16/4409 , C23C16/45542 , C23C16/5096 , H01J37/32477
摘要： A plasma enhanced atomic layer deposition (PEALD) method and system, the system including a process chamber and a substrate holder provided within the processing chamber and configured to support a substrate on which a predetermined film will be formed. A first process material supply system is configured to supply a first process material to the process chamber, and a second process material supply system configured to supply a second process material to the process chamber in order to provide a reduction reaction with the first process material to form the predetermined film on the substrate. Also included is a power source configured to couple electromagnetic power to the process chamber to generate a plasma within the process chamber to facilitate the reduction reaction, and a chamber component exposed to the plasma and made from a film compatible material that is compatible with the predetermined film deposited on the substrate.
摘要翻译： 等离子体增强原子层沉积（PEALD）方法和系统，该系统包括设置在处理室内的处理室和衬底保持器，并被配置为支撑将在其上形成预定膜的衬底。 第一处理材料供应系统被配置为将第一处理材料供应到处理室，以及第二处理材料供应系统，其被配置为将第二处理材料供应到处理室，以便提供与第一处理材料的还原反应 在基板上形成预定的膜。 还包括被配置为将电磁功率耦合到处理室以在处理室内产生等离子体以促进还原反应的电源，以及暴露于等离子体并由与薄膜相容的材料制成的室组件，其与预定的 膜沉积在基底上。
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公开(公告)号：US20060213438A1
公开(公告)日：2006-09-28
申请号：US11090256
申请日：2005-03-28
IPC分类号： C23C16/00
CPC分类号： C23C16/4409 , C23C16/4404 , C23C16/4412 , C23C16/45542 , C23C16/45544 , C23C16/5096
摘要： A plasma enhanced atomic layer deposition (PEALD) system includes a first chamber component coupled to a second chamber component to provide a processing chamber defining an isolated processing space within the processing chamber. A substrate holder is provided within the processing chamber and configured to support a substrate, a first process material supply system is configured to supply a first process material to the processing chamber and a second process material supply system is configured to supply a second process material to the processing chamber. A power source is configured to couple electromagnetic power to the processing chamber, and a sealing assembly interposed between the first and second chamber components. The sealing assembly includes a plurality of sealing members configured to reduce the amount of external contaminants permeating through an interface of the first and second components into the isolated processing space of the processing chamber, wherein the film is formed on the substrate by alternatingly introducing the first process material and the second process material.
摘要翻译： 等离子体增强原子层沉积（PEALD）系统包括耦合到第二室部件的第一室部件，以提供限定处理室内的隔离处理空间的处理室。 衬底保持器设置在处理室内并被配置为支撑衬底，第一处理材料供应系统被配置为将第一处理材料供应到处理室，第二处理材料供应系统被配置为将第二处理材料供应到 处理室。 电源被配置为将电磁功率耦合到处理室，以及插入在第一和第二室部件之间的密封组件。 密封组件包括多个密封构件，其被配置为将渗透通过第一和第二组件的界面的外部污染物的量减少到处理室的隔离处理空间中，其中通过交替地引入第一 工艺材料和第二工艺材料。
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4.发明申请公开(公告)号：US20070218683A1
公开(公告)日：2007-09-20
申请号：US11378263
申请日：2006-03-20
CPC分类号： C23C16/45542 , C23C16/32 , C23C16/36 , C23C16/509 , C23C16/56
摘要： A method for forming a modified TaC or TaCN film that may be utilized as a barrier film for Cu metallization. The method includes disposing a substrate in a process chamber of a plasma enhanced atomic layer deposition (PEALD) system configured to perform a PEALD process, depositing a TaC or TaCN film on the substrate using the PEALD process, and modifying the deposited TaC or TaCN film by exposing the deposited TaC or TaCN film to plasma excited hydrogen or atomic hydrogen or a combination thereof in order to remove carbon from at least the plasma exposed portion of the deposited TaCN film. The method further includes forming a metal film on the modified TaCN film, where the modified TaCN film provides stronger adhesion to the metal film than the deposited TaCN film. According to one embodiment, a TaCN film is deposited from alternating exposures of TAIMATA and plasma excited hydrogen.
摘要翻译： 用于形成可用作Cu金属化阻挡膜的改性TaC或TaCN膜的方法。 该方法包括将基板设置在等离子体增强原子层沉积（PEALD）系统的处理室中，其被配置为执行PEALD工艺，使用PEALD工艺在基板上沉积TaC或TaCN膜，以及修改沉积的TaC或TaCN膜 通过将沉积的TaC或TaCN膜暴露于等离子体激发的氢或原子氢或其组合，以便从至少沉积的TaCN膜的等离子体暴露部分除去碳。 该方法还包括在改性的TaCN膜上形成金属膜，其中改性的TaCN膜比沉积的TaCN膜提供比金属膜更强的附着力。 根据一个实施方案，通过TAIMATA和等离子体激发氢的交替曝光沉积TaCN膜。
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5.发明授权公开(公告)号：US07959985B2
公开(公告)日：2011-06-14
申请号：US11378263
申请日：2006-03-20
CPC分类号： C23C16/45542 , C23C16/32 , C23C16/36 , C23C16/509 , C23C16/56
摘要： A method for forming a modified TaC or TaCN film that may be utilized as a barrier film for Cu metallization. The method includes disposing a substrate in a process chamber of a plasma enhanced atomic layer deposition (PEALD) system configured to perform a PEALD process, depositing a TaC or TaCN film on the substrate using the PEALD process, and modifying the deposited TaC or TaCN film by exposing the deposited TaC or TaCN film to plasma excited hydrogen or atomic hydrogen or a combination thereof in order to remove carbon from at least the plasma exposed portion of the deposited TaCN film. The method further includes forming a metal film on the modified TaCN film, where the modified TaCN film provides stronger adhesion to the metal film than the deposited TaCN film. According to one embodiment, a TaCN film is deposited from alternating exposures of TAIMATA and plasma excited hydrogen.
摘要翻译： 用于形成可用作Cu金属化阻挡膜的改性TaC或TaCN膜的方法。 该方法包括将基板设置在等离子体增强原子层沉积（PEALD）系统的处理室中，其被配置为执行PEALD工艺，使用PEALD工艺在基板上沉积TaC或TaCN膜，以及修改沉积的TaC或TaCN膜 通过将沉积的TaC或TaCN膜暴露于等离子体激发的氢或原子氢或其组合，以便从至少沉积的TaCN膜的等离子体暴露部分除去碳。 该方法还包括在改性的TaCN膜上形成金属膜，其中改性的TaCN膜比沉积的TaCN膜提供比金属膜更强的附着力。 根据一个实施方案，通过TAIMATA和等离子体激发氢的交替曝光沉积TaCN膜。
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公开(公告)号：US07651568B2
公开(公告)日：2010-01-26
申请号：US11090256
申请日：2005-03-28
IPC分类号： C23C16/505 , C23C16/503 , H01L21/306
CPC分类号： C23C16/4409 , C23C16/4404 , C23C16/4412 , C23C16/45542 , C23C16/45544 , C23C16/5096
摘要： A plasma enhanced atomic layer deposition (PEALD) system includes a first chamber component coupled to a second chamber component to provide a processing chamber defining an isolated processing space within the processing chamber. A substrate holder is provided within the processing chamber and configured to support a substrate, a first process material supply system is configured to supply a first process material to the processing chamber and a second process material supply system is configured to supply a second process material to the processing chamber. A power source is configured to couple electromagnetic power to the processing chamber, and a sealing assembly interposed between the first and second chamber components. The sealing assembly includes a plurality of sealing members configured to reduce the amount of external contaminants permeating through an interface of the first and second components into the isolated processing space of the processing chamber, wherein the film is formed on the substrate by alternatingly introducing the first process material and the second process material.
摘要翻译： 等离子体增强原子层沉积（PEALD）系统包括耦合到第二室部件的第一室部件，以提供限定处理室内的隔离处理空间的处理室。 衬底保持器设置在处理室内并被配置为支撑衬底，第一处理材料供应系统被配置为将第一处理材料供应到处理室，第二处理材料供应系统被配置为将第二处理材料供应到 处理室。 电源被配置为将电磁功率耦合到处理室，以及插入在第一和第二室部件之间的密封组件。 密封组件包括多个密封构件，其被配置为将渗透通过第一和第二组件的界面的外部污染物的量减少到处理室的隔离处理空间中，其中通过交替地引入第一 工艺材料和第二工艺材料。
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公开(公告)号：US08486845B2
公开(公告)日：2013-07-16
申请号：US11084024
申请日：2005-03-21
申请人： Tsukasa Matsuda
发明人： Tsukasa Matsuda
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/45544 , C23C16/4554 , C23C16/515 , H01J37/32009 , H01J37/32532 , H01L21/28562
摘要： A method for depositing a film on a substrate using a plasma enhanced atomic layer deposition (PEALD) process includes disposing the substrate in a process chamber configured to facilitate the PEALD process, introducing a first process material within the process chamber and introducing a second process material within the process chamber. Also included is coupling electromagnetic power to the process chamber during introduction of the second process material in order to generate a plasma that facilitates a reduction reaction between the first and second process materials at a surface of the substrate. A reactive gas is introduced within the process chamber, the reactive gas chemically reacting with contaminants in the process chamber to release the contaminants from at least one of a process chamber component or the substrate.
摘要翻译： 使用等离子体增强原子层沉积（PEALD）工艺在衬底上沉积膜的方法包括将衬底布置在处理室中，该处理室被配置为便于PEALD工艺，在处理室内引入第一工艺材料并引入第二工艺材料 在处理室内。 还包括在引入第二工艺材料期间将电磁功率耦合到处理室，以便产生促进第一和第二工艺材料在衬底表面处的还原反应的等离子体。 反应性气体被引入处理室内，反应气体与处理室中的污染物质化学反应以从处理室组件或衬底中的至少一个释放污染物。
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公开(公告)号：US08100147B2
公开(公告)日：2012-01-24
申请号：US11782090
申请日：2007-07-24
申请人： Hayashi Otsuki , Tsukasa Matsuda , Kyoko Ikeda
发明人： Hayashi Otsuki , Tsukasa Matsuda , Kyoko Ikeda
IPC分类号： B01F5/18
CPC分类号： G01N1/24 , C23C16/4405 , C23C16/4412 , G01N15/06 , G01N2015/0693 , H01L21/67069 , H01L21/67115 , H01L21/67253 , H01L21/68742 , Y10T137/8593 , Y10T137/87652 , Y10T137/8766
摘要： The present invention provides a particle measuring system which is provided in a processing system 40 which generates an atmosphere obtained by exhausting air or a gas in a processing chamber 48 by a vacuum pump 98 and applies a process concerning semiconductor manufacture to a wafer W in the atmosphere, attached to an exhaust pipe 90 which connects an exhaust opening 86 of the processing chamber 48 with the vacuum pump 98, and measures the number of the particles in the exhaust gas, and a measuring method thereof, the system and method providing a processing system and a cleaning method which terminate etching process by determining an end point based on the number of the particles in the exhaust gas and perform cleaning of unnecessary films.
摘要翻译： 本发明提供一种粒子测量系统，其设置在处理系统40中，该处理系统40产生通过真空泵98排出处理室48中的空气或气体而获得的气氛，并将与半导体制造有关的工艺应用于晶片W 附着在排气管90上，排气管90将处理室48的排气口86与真空泵98连接，并测量废气中的颗粒数量及其测量方法，该系统和方法提供处理 系统和清洁方法，其通过基于废气中的颗粒数量确定终点并执行不需要的膜的清洁来终止蚀刻工艺。
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公开(公告)号：US07834739B2
公开(公告)日：2010-11-16
申请号：US12076337
申请日：2008-03-17
申请人： Shoji Yamaguchi , Mario Fuse , Yasunori Koda , Kunihiro Takahashi , Hiroyoshi Inoue , Tsukasa Matsuda
发明人： Shoji Yamaguchi , Mario Fuse , Yasunori Koda , Kunihiro Takahashi , Hiroyoshi Inoue , Tsukasa Matsuda
CPC分类号： G01R33/02
摘要： A baggage management gate includes a first reading device and a second reading device, a detecting device, a determining unit, a first opening and closing device and a second opening and closing device. The baggage management gate manages baggage that is restricted to be carried in or out from a predetermined region. And in order away from the region in which the baggage is managed, the first reading device, the second opening and closing device, the detecting device for both the first person and the second person, the first opening and closing device, and the second reading device are arranged in an entrance direction from the passage to the management region in which the baggage is managed.
摘要翻译： 行李管理门包括第一读取装置和第二读取装置，检测装置，确定装置，第一打开和关闭装置以及第二打开和关闭装置。 行李管理门管理被限制在预定区域内进出的行李。 并且为了远离管理行李的区域，第一读取装置，第二打开和关闭装置，用于第一人和第二人的检测装置，第一打开和关闭装置以及第二读取 设备沿着通道行进管理区域的入口方向排列。
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公开(公告)号：US07667840B2
公开(公告)日：2010-02-23
申请号：US11965357
申请日：2007-12-27
申请人： Hayashi Otsuki , Tsukasa Matsuda , Kyoko Ikeda
发明人： Hayashi Otsuki , Tsukasa Matsuda , Kyoko Ikeda
IPC分类号： G01N21/00
CPC分类号： G01N1/24 , C23C16/4405 , C23C16/4412 , G01N15/06 , G01N2015/0693 , H01L21/67069 , H01L21/67115 , H01L21/67253 , H01L21/68742 , Y10T137/8593 , Y10T137/87652 , Y10T137/8766
摘要： The present invention provides a particle measuring system which is provided in a processing system that generates an atmosphere obtained by exhausting air or a gas in a processing chamber by a vacuum pump and applies a process concerning semiconductor manufacture to a wafer W in the atmosphere, attached to an exhaust pipe which connects an exhaust opening of the processing chamber with the vacuum pump, and measures the number of the particles in the exhaust gas, and a measuring method thereof, the system and method providing a processing system and a cleaning method which terminate etching process by determining an end point based on the number of the particles in the exhaust gas and perform cleaning of unnecessary films.
摘要翻译： 本发明提供一种粒子测量系统，其设置在处理系统中，该处理系统产生通过真空泵排出处理室中的空气或气体而获得的气氛，并将关于半导体制造的处理应用于大气中的晶片W，附着 涉及将处理室的排气口与真空泵连接并测量排气中的颗粒数的排气管及其测量方法，提供处理系统的系统和方法以及终止的处理室的清洁方法 通过基于排气中的颗粒数确定终点并执行不需要的膜的清洁来进行蚀刻处理。
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