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    Method of light enhanced atomic layer deposition
    1.
    发明申请
    Method of light enhanced atomic layer deposition 有权
    光增强原子层沉积的方法

    公开(公告)号：US20070218704A1

    公开(公告)日：2007-09-20

    申请号：US11378270

    申请日：2006-03-20

    申请人： Tadahiro Ishizaka ,  Frank Cerio ,  Jacques Faguet

    发明人： Tadahiro Ishizaka ,  Frank Cerio ,  Jacques Faguet

    IPC分类号： H01L21/31

    CPC分类号： H01L21/76843 ,  C23C16/32 ,  C23C16/36 ,  C23C16/45536 ,  C23C16/482 ,  H01L21/28562

    摘要： A method light enhanced atomic layer deposition for forming a film on a substrate. The method includes disposing the substrate in a process chamber of a light enhanced atomic layer deposition (LEALD) system configured to perform a LEALD process; and depositing a film on the substrate using the LEALD process, where the depositing includes (a) exposing the substrate to a first process material, (b) exposing the substrate to a second process material containing a reducing agent and irradiating the substrate with a first light radiation having either no or at least partial temporal overlap with the exposing of the substrate to the second process material, (c) repeating steps (a) and (b) until the desired film has been deposited. According to one embodiment of the invention, the deposited film can be a TaCN film or a TaC film.

    摘要翻译： 一种用于在基板上形成薄膜的光增强原子层沉积。 该方法包括将衬底设置在被配置为执行LEALD处理的光增强原子层沉积（LEALD）系统的处理室中; 以及使用LEALD工艺在衬底上沉积膜，其中沉积包括（a）将衬底暴露于第一工艺材料，（b）将衬底暴露于含有还原剂的第二工艺材料上，并用第一 具有或不至少部分时间重叠的光辐射与基板暴露于第二工艺材料，（c）重复步骤（a）和（b），直到所需的膜沉积为止。 根据本发明的一个实施例，沉积膜可以是TaCN膜或TaC膜。

    Method of light enhanced atomic layer deposition
    3.
    发明授权
    Method of light enhanced atomic layer deposition 有权
    光增强原子层沉积的方法

    公开(公告)号：US07727912B2

    公开(公告)日：2010-06-01

    申请号：US11378270

    申请日：2006-03-20

    申请人： Tadahiro Ishizaka ,  Frank M. Cerio, Jr. ,  Jacques Faguet

    发明人： Tadahiro Ishizaka ,  Frank M. Cerio, Jr. ,  Jacques Faguet

    IPC分类号： H01L21/469

    CPC分类号： H01L21/76843 ,  C23C16/32 ,  C23C16/36 ,  C23C16/45536 ,  C23C16/482 ,  H01L21/28562

    摘要： A method light enhanced atomic layer deposition for forming a film on a substrate. The method includes disposing the substrate in a process chamber of a light enhanced atomic layer deposition (LEALD) system configured to perform a LEALD process; and depositing a film on the substrate using the LEALD process, where the depositing includes (a) exposing the substrate to a first process material, (b) exposing the substrate to a second process material containing a reducing agent and irradiating the substrate with a first light radiation having either no or at least partial temporal overlap with the exposing of the substrate to the second process material, (c) repeating steps (a) and (b) until the desired film has been deposited. According to one embodiment of the invention, the deposited film can be a TaCN film or a TaC film.

    摘要翻译： 一种用于在基板上形成薄膜的光增强原子层沉积。 该方法包括将衬底设置在被配置为执行LEALD处理的光增强原子层沉积（LEALD）系统的处理室中; 以及使用LEALD工艺在衬底上沉积膜，其中沉积包括（a）将衬底暴露于第一工艺材料，（b）将衬底暴露于含有还原剂的第二工艺材料上，并用第一 具有或不至少部分时间重叠的光辐射与基板暴露于第二工艺材料，（c）重复步骤（a）和（b），直到所需的膜沉积为止。 根据本发明的一个实施例，沉积膜可以是TaCN膜或TaC膜。

    Method of integrating PEALD Ta- containing films into Cu metallization
    4.
    发明申请
    Method of integrating PEALD Ta- containing films into Cu metallization 有权
    将含有PEALD的含Ta膜的Cu合金化的方法

    公开(公告)号：US20070218683A1

    公开(公告)日：2007-09-20

    申请号：US11378263

    申请日：2006-03-20

    申请人： Tadahiro Ishizaka ,  Tsukasa Matsuda ,  Masamichi Hara ,  Jacques Faguet ,  Yasushi Mizusawa

    发明人： Tadahiro Ishizaka ,  Tsukasa Matsuda ,  Masamichi Hara ,  Jacques Faguet ,  Yasushi Mizusawa

    IPC分类号： C23C16/00 ,  H05H1/00

    CPC分类号： C23C16/45542 ,  C23C16/32 ,  C23C16/36 ,  C23C16/509 ,  C23C16/56

    摘要： A method for forming a modified TaC or TaCN film that may be utilized as a barrier film for Cu metallization. The method includes disposing a substrate in a process chamber of a plasma enhanced atomic layer deposition (PEALD) system configured to perform a PEALD process, depositing a TaC or TaCN film on the substrate using the PEALD process, and modifying the deposited TaC or TaCN film by exposing the deposited TaC or TaCN film to plasma excited hydrogen or atomic hydrogen or a combination thereof in order to remove carbon from at least the plasma exposed portion of the deposited TaCN film. The method further includes forming a metal film on the modified TaCN film, where the modified TaCN film provides stronger adhesion to the metal film than the deposited TaCN film. According to one embodiment, a TaCN film is deposited from alternating exposures of TAIMATA and plasma excited hydrogen.

    摘要翻译： 用于形成可用作Cu金属化阻挡膜的改性TaC或TaCN膜的方法。 该方法包括将基板设置在等离子体增强原子层沉积（PEALD）系统的处理室中，其被配置为执行PEALD工艺，使用PEALD工艺在基板上沉积TaC或TaCN膜，以及修改沉积的TaC或TaCN膜 通过将沉积的TaC或TaCN膜暴露于等离子体激发的氢或原子氢或其组合，以便从至少沉积的TaCN膜的等离子体暴露部分除去碳。 该方法还包括在改性的TaCN膜上形成金属膜，其中改性的TaCN膜比沉积的TaCN膜提供比金属膜更强的附着力。 根据一个实施方案，通过TAIMATA和等离子体激发氢的交替曝光沉积TaCN膜。

    Apparatus for thermal and plasma enhanced vapor deposition and method of operating
    5.
    发明申请
    Apparatus for thermal and plasma enhanced vapor deposition and method of operating 审中-公开
    用于热和等离子体增强气相沉积的装置和操作方法

    公开(公告)号：US20070116873A1

    公开(公告)日：2007-05-24

    申请号：US11281376

    申请日：2005-11-18

    申请人： Yicheng Li ,  Tadahiro Ishizaka ,  Kaoru Yamamoto ,  Atsushi Gomi ,  Masamichi Hara ,  Toshiaki Fujisato ,  Jacques Faguet ,  Yasushi Mizusawa

    发明人： Yicheng Li ,  Tadahiro Ishizaka ,  Kaoru Yamamoto ,  Atsushi Gomi ,  Masamichi Hara ,  Toshiaki Fujisato ,  Jacques Faguet ,  Yasushi Mizusawa

    IPC分类号： H05H1/24 ,  C23C16/00 ,  G06F19/00

    CPC分类号： C23C16/45517 ,  C23C16/4401 ,  C23C16/4412 ,  H01J37/32082 ,  H01J37/32495 ,  H01J37/32522

    摘要： A method, computer readable medium, and system for vapor deposition on a substrate that maintain a first assembly of the vapor deposition system at a first temperature, maintain a second assembly of the vapor deposition system at a reduced temperature lower than the first temperature, dispose the substrate in a process space of the first assembly that is vacuum isolated from a transfer space in the second assembly, and deposit a material on the substrate. As such, the system includes a first assembly having a process space configured to facilitate material deposition, a second assembly coupled to the first assembly and having a transfer space to facilitate transfer of the substrate into and out of the deposition system, a substrate stage connected to the second assembly and configured to support the substrate, and a sealing assembly configured to separate the process space from the transfer space. The first assembly is configured to be maintained at a first temperature and the second assembly is configured to be maintained at a reduced temperature lower than the first temperature.

    摘要翻译： 一种用于气相沉积在基板上的方法，计算机可读介质和系统，其将气相沉积系统的第一组件保持在第一温度，将气相沉积系统的第二组件保持在低于第一温度的降低的温度， 所述第一组件的处理空间中的所述衬底与所述第二组件中的传送空间真空隔离，并且将材料沉积在所述衬底上。 因此，该系统包括具有被配置为促进材料沉积的处理空间的第一组件，耦合到第一组件的第二组件，并且具有传输空间以促进衬底进入和离开沉积系统;衬底台连接 并且被配置为支撑所述基板，以及密封组件，其被配置为将所述处理空间与所述传送空间分离。 第一组件被配置为保持在第一温度，并且第二组件构造成保持在低于第一温度的降低的温度。

    Plasma enhanced atomic layer deposition system and method
    6.
    发明申请
    Plasma enhanced atomic layer deposition system and method 有权
    等离子体增强原子层沉积系统和方法

    公开(公告)号：US20060225655A1

    公开(公告)日：2006-10-12

    申请号：US11094461

    申请日：2005-03-31

    申请人： Jacques Faguet ,  Frank Cerio ,  Tsukasa Matsuda ,  Kaoru Yamamoto

    发明人： Jacques Faguet ,  Frank Cerio ,  Tsukasa Matsuda ,  Kaoru Yamamoto

    IPC分类号： H05H1/24 ,  C23C16/00

    CPC分类号： C23C16/45544 ,  C23C16/4401 ,  C23C16/4409 ,  C23C16/45542 ,  C23C16/5096 ,  H01J37/32477

    摘要： A plasma enhanced atomic layer deposition (PEALD) method and system, the system including a process chamber and a substrate holder provided within the processing chamber and configured to support a substrate on which a predetermined film will be formed. A first process material supply system is configured to supply a first process material to the process chamber, and a second process material supply system configured to supply a second process material to the process chamber in order to provide a reduction reaction with the first process material to form the predetermined film on the substrate. Also included is a power source configured to couple electromagnetic power to the process chamber to generate a plasma within the process chamber to facilitate the reduction reaction, and a chamber component exposed to the plasma and made from a film compatible material that is compatible with the predetermined film deposited on the substrate.

    摘要翻译： 等离子体增强原子层沉积（PEALD）方法和系统，该系统包括设置在处理室内的处理室和衬底保持器，并被配置为支撑将在其上形成预定膜的衬底。 第一处理材料供应系统被配置为将第一处理材料供应到处理室，以及第二处理材料供应系统，其被配置为将第二处理材料供应到处理室，以便提供与第一处理材料的还原反应 在基板上形成预定的膜。 还包括被配置为将电磁功率耦合到处理室以在处理室内产生等离子体以促进还原反应的电源，以及暴露于等离子体并由与薄膜相容的材料制成的室组件，其与预定的 膜沉积在基底上。

    Method of integrating PEALD Ta-containing films into Cu metallization
    7.
    发明授权
    Method of integrating PEALD Ta-containing films into Cu metallization 有权
    将含有PEALD的含Ta的膜整合到Cu金属化中的方法

    公开(公告)号：US07959985B2

    公开(公告)日：2011-06-14

    申请号：US11378263

    申请日：2006-03-20

    申请人： Tadahiro Ishizaka ,  Tsukasa Matsuda ,  Masamichi Hara ,  Jacques Faguet ,  Yasushi Mizusawa

    发明人： Tadahiro Ishizaka ,  Tsukasa Matsuda ,  Masamichi Hara ,  Jacques Faguet ,  Yasushi Mizusawa

    IPC分类号： C23C16/00 ,  H05H1/00

    CPC分类号： C23C16/45542 ,  C23C16/32 ,  C23C16/36 ,  C23C16/509 ,  C23C16/56

    摘要： A method for forming a modified TaC or TaCN film that may be utilized as a barrier film for Cu metallization. The method includes disposing a substrate in a process chamber of a plasma enhanced atomic layer deposition (PEALD) system configured to perform a PEALD process, depositing a TaC or TaCN film on the substrate using the PEALD process, and modifying the deposited TaC or TaCN film by exposing the deposited TaC or TaCN film to plasma excited hydrogen or atomic hydrogen or a combination thereof in order to remove carbon from at least the plasma exposed portion of the deposited TaCN film. The method further includes forming a metal film on the modified TaCN film, where the modified TaCN film provides stronger adhesion to the metal film than the deposited TaCN film. According to one embodiment, a TaCN film is deposited from alternating exposures of TAIMATA and plasma excited hydrogen.

    摘要翻译： 用于形成可用作Cu金属化阻挡膜的改性TaC或TaCN膜的方法。 该方法包括将基板设置在等离子体增强原子层沉积（PEALD）系统的处理室中，其被配置为执行PEALD工艺，使用PEALD工艺在基板上沉积TaC或TaCN膜，以及修改沉积的TaC或TaCN膜 通过将沉积的TaC或TaCN膜暴露于等离子体激发的氢或原子氢或其组合，以便从至少沉积的TaCN膜的等离子体暴露部分除去碳。 该方法还包括在改性的TaCN膜上形成金属膜，其中改性的TaCN膜比沉积的TaCN膜提供比金属膜更强的附着力。 根据一个实施方案，通过TAIMATA和等离子体激发氢的交替曝光沉积TaCN膜。

    Ionized PVD with sequential deposition and etching
    8.
    发明授权
    Ionized PVD with sequential deposition and etching 有权
    电离PVD具有顺序沉积和蚀刻

    公开(公告)号：US07744735B2

    公开(公告)日：2010-06-29

    申请号：US10795093

    申请日：2004-03-05

    申请人： Rodney Lee Robison ,  Jacques Faguet ,  Bruce Gittleman ,  Tugrul Yasar ,  Frank Cerio ,  Jozef Brcka

    发明人： Rodney Lee Robison ,  Jacques Faguet ,  Bruce Gittleman ,  Tugrul Yasar ,  Frank Cerio ,  Jozef Brcka

    IPC分类号： C23C14/00 ,  C23C14/32 ,  C25B11/00 ,  C25B13/00

    CPC分类号： H01L21/76843 ,  C23C14/046 ,  C23C14/345 ,  C23C14/358 ,  H01J37/321 ,  H01J37/34 ,  H01L21/2855 ,  H01L21/32131 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76873 ,  H01L21/76877

    摘要： An iPVD apparatus (20) is programmed to deposit material (10) onto semiconductor substrates (21) by cycling between deposition and etch modes within a vacuum chamber (30). Static magnetic fields are kept to a minimum during at least the etch modes, at least less than 150 Gauss, typically less than 50 Gauss, and preferably in the range of 0-10 Gauss. Static magnetic fields during deposition modes may be more than 150 Gauss, in the range of 0-50 Gauss, or preferably 20-30 Gauss, and may be the same as during etch modes or switched between a higher level during deposition modes and a lower level, including zero, during etch modes. Such switching may be by switching electromagnet current or by moving permanent magnets, by translation or rotation. Static magnetic fields are kept to a minimum during at least the etch modes, at least less than 150 Gauss, typically less than 50 Gauss, and preferably in the range of 1-10 Gauss. The modes may operate at different power and pressure parameters. Pressure of more than 50 mTorr are preferred for deposition in a thermalized plasma while pressure of less than a few mTorr is preferred for etching.

    摘要翻译： iPVD装置（20）被编程为通过在真空室（30）内的沉积和蚀刻模式之间循环来将材料（10）沉积到半导体衬底（21）上。 至少在蚀刻模式下，静态磁场保持最小，至少小于150高斯，通常小于50高斯，优选在0-10高斯范围内。 在沉积模式期间的静磁场可以大于150高斯，范围为0-50高斯，或优选为20-30高斯，并且可以与蚀刻模式相同或在沉积模式期间在较高水平之间切换， 在蚀刻模式期间包括零。 这种切换可以是通过切换电磁体电流或通过平移或旋转来移动永磁体。 至少在蚀刻模式下，静态磁场保持最小，至少小于150高斯，通常小于50高斯，优选在1-10高斯范围内。 这些模式可以在不同的功率和压力参数下工作。 超过50mTorr的压力优选用于在热化等离子体中沉积，而对于蚀刻来说优选少于几mTorr的压力。