INTEGRATED SENSOR ARRAYS FOR BIOLOGICAL AND CHEMICAL ANALYSIS
    2.
    发明申请
    INTEGRATED SENSOR ARRAYS FOR BIOLOGICAL AND CHEMICAL ANALYSIS 有权
    用于生物和化学分析的集成传感器阵列

    公开(公告)号:US20110263463A1

    公开(公告)日:2011-10-27

    申请号:US13125133

    申请日:2009-10-22

    IPC分类号: C40B60/12 B82Y15/00

    摘要: The invention is directed to apparatus and chips comprising a large scale chemical field effect transistor arrays that include an array of sample-retaining regions capable of retaining a chemical or biological sample from a sample fluid for analysis. In one aspect such transistor arrays have a pitch of 10 μm or less and each sample-retaining region is positioned on at least one chemical field effect transistor which is configured to generate at least one output signal related to a characteristic of a chemical or biological sample in such sample-retaining region. In one embodiment, the characteristic of said chemical or biological sample is a concentration of a charged species and wherein each of said chemical field effect transistors is an ion-sensitive field effect transistor having a floating gate with a dielectric layer on a surface thereof, the dielectric layer contacting said sample fluid and being capable of accumulating charge in proportion to a concentration of the charged species in said sample fluid. In one embodiment such charged species is a hydrogen ion such that the sensors measure changes in pH of the sample fluid in or adjacent to the sample-retaining region thereof. Apparatus and chips of the invention may be adapted for large scale pH-based DNA sequencing and other bioscience and biomedical applications.

    摘要翻译: 本发明涉及包括大规模化学场效应晶体管阵列的装置和芯片,其包括能够保留来自样品流体的化学或生物样品用于分析的样品保持区阵列。 在一个方面,这种晶体管阵列具有10μm或更小的间距,并且每个采样保持区域位于至少一个化学场效应晶体管上,该晶体管被配置为产生与化学或生物样品的特性相关的至少一个输出信号 在这样的样品保留区域中。 在一个实施方案中,所述化学或生物样品的特征是带电物质的浓度,并且其中每个所述化学场效应晶体管是离子敏感场效应晶体管,其具有在其表面上具有介电层的浮置栅极, 电介质层与所述样品流体接触并且能够与所述样品流体中的带电物质的浓度成比例地积累电荷。 在一个实施方案中,这种带电物质是氢离子,使得传感器测量样品流体在其样品保持区域中或其附近的pH值的变化。 本发明的装置和芯片可适用于大规模的基于pH的DNA测序和其他生物科学和生物医学应用。

    Integrated sensor arrays for biological and chemical analysis
    3.
    发明授权
    Integrated sensor arrays for biological and chemical analysis 有权
    用于生物和化学分析的集成传感器阵列

    公开(公告)号:US08936763B2

    公开(公告)日:2015-01-20

    申请号:US13125133

    申请日:2009-10-22

    摘要: The invention is directed to apparatus and chips comprising a large scale chemical field effect transistor arrays that include an array of sample-retaining regions capable of retaining a chemical or biological sample from a sample fluid for analysis. In one aspect such transistor arrays have a pitch of 10 μm or less and each sample-retaining region is positioned on at least one chemical field effect transistor which is configured to generate at least one output signal related to a characteristic of a chemical or biological sample in such sample-retaining region. In one embodiment, the characteristic of said chemical or biological sample is a concentration of a charged species and wherein each of said chemical field effect transistors is an ion-sensitive field effect transistor having a floating gate with a dielectric layer on a surface thereof, the dielectric layer contacting said sample fluid and being capable of accumulating charge in proportion to a concentration of the charged species in said sample fluid. In one embodiment such charged species is a hydrogen ion such that the sensors measure changes in pH of the sample fluid in or adjacent to the sample-retaining region thereof. Apparatus and chips of the invention may be adapted for large scale pH-based DNA sequencing and other bioscience and biomedical applications.

    摘要翻译: 本发明涉及包括大规模化学场效应晶体管阵列的装置和芯片,其包括能够保留来自样品流体的化学或生物样品用于分析的样品保持区阵列。 在一个方面,这种晶体管阵列具有10μm或更小的间距,并且每个采样保持区域位于至少一个化学场效应晶体管上,该晶体管被配置为产生与化学或生物样品的特性相关的至少一个输出信号 在这样的样品保留区域中。 在一个实施方案中,所述化学或生物样品的特征是带电物质的浓度,并且其中每个所述化学场效应晶体管是离子敏感场效应晶体管,其具有在其表面上具有介电层的浮置栅极, 电介质层与所述样品流体接触并且能够与所述样品流体中的带电物质的浓度成比例地积累电荷。 在一个实施方案中,这种带电物质是氢离子,使得传感器测量样品流体在其样品保持区域中或其附近的pH值的变化。 本发明的装置和芯片可适用于大规模的基于pH的DNA测序和其他生物科学和生物医学应用。

    Titanium nitride as sensing layer for microwell structure
    9.
    发明授权
    Titanium nitride as sensing layer for microwell structure 有权
    氮化钛作为微孔结构的传感层

    公开(公告)号:US08821798B2

    公开(公告)日:2014-09-02

    申请号:US13354072

    申请日:2012-01-19

    IPC分类号: G01N27/00

    摘要: A method of fabricating a microwell in an array structure is disclosed herein. The array structure can include a plurality of field effect transistors (FETs), where each FET has a gate structure. The method can include disposing a titanium nitride (TiN) layer on at least one conductive layer coupled to the gate structure of at least one FET. A insulation layer can also be disposed on the array structure, where the insulation layer lies above the TiN layer. Further, an opening above the gate structure of the at least one FET can be etched to remove the insulation layer above the gate structure and to expose the TiN layer. A microwell with at least one sidewall formed from the insulation layer and with a bottom surface formed from the TiN layer is a result of the etching process.

    摘要翻译: 本文公开了一种制造阵列结构中的微孔的方法。 阵列结构可以包括多个场效应晶体管(FET),其中每个FET具有栅极结构。 该方法可以包括在耦合到至少一个FET的栅极结构的至少一个导电层上设置氮化钛(TiN)层。 绝缘层也可以设置在阵列结构上,其中绝缘层位于TiN层之上。 此外,可以蚀刻在至少一个FET的栅极结构之上的开口以去除栅极结构上方的绝缘层并暴露TiN层。 具有由绝缘层形成的至少一个侧壁和由TiN层形成的底表面的微孔是蚀刻工艺的结果。

    TITANIUM NITRIDE AS SENSING LAYER FOR MICROWELL STRUCTURE
    10.
    发明申请
    TITANIUM NITRIDE AS SENSING LAYER FOR MICROWELL STRUCTURE 有权
    硝酸钛作为感光层用于微结构

    公开(公告)号:US20130190211A1

    公开(公告)日:2013-07-25

    申请号:US13354072

    申请日:2012-01-19

    IPC分类号: C40B40/18 C40B50/14

    摘要: A method of fabricating a microwell in an array structure is disclosed herein. The array structure can include a plurality of field effect transistors (FETs), where each FET has a gate structure. The method can include disposing a titanium nitride (TiN) layer on at least one conductive layer coupled to the gate structure of at least one FET. A insulation layer can also be disposed on the array structure, where the insulation layer lies above the TiN layer. Further, an opening above the gate structure of the at least one FET can be etched to remove the insulation layer above the gate structure and to expose the TiN layer. A microwell with at least one sidewall formed from the insulation layer and with a bottom surface formed from the TiN layer is a result of the etching process.

    摘要翻译: 本文公开了一种制造阵列结构中的微孔的方法。 阵列结构可以包括多个场效应晶体管(FET),其中每个FET具有栅极结构。 该方法可以包括在耦合到至少一个FET的栅极结构的至少一个导电层上设置氮化钛(TiN)层。 绝缘层也可以设置在阵列结构上,其中绝缘层位于TiN层之上。 此外,可以蚀刻在至少一个FET的栅极结构之上的开口以去除栅极结构上方的绝缘层并暴露TiN层。 具有由绝缘层形成的至少一个侧壁和由TiN层形成的底表面的微孔是蚀刻工艺的结果。