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1.发明申请公开(公告)号：US20100226404A1
公开(公告)日：2010-09-09
申请号：US12781935
申请日：2010-05-18
CPC分类号： H01L33/18 , H01L25/0756 , H01L33/105 , H01L33/32 , H01L33/405 , H01L33/46 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： A semiconductor light emitting device includes an in-plane active region that emits linearly-polarized light. An in-plane active region may include, for example, a {11 20} or {10 10} InGaN light emitting layer. In some embodiments, a polarizer oriented to pass light of a polarization of a majority of light emitted by the active region serves as a contact. In some embodiments, two active regions emitting the same or different colored light are separated by a polarizer oriented to pass light of a polarization of a majority of light emitted by the bottom active region, and to reflect light of a polarization of a majority of light emitted by the top active region. In some embodiments, a polarizer reflects light scattered by a wavelength converting layer.
摘要翻译： 半导体发光器件包括发射线偏振光的面内有源区域。 面内有源区可以包括例如{11 20}或{10 10} InGaN发光层。 在一些实施例中，定向为使得由有源区域发射的大部分光的偏振的光通过的偏振片用作接触。 在一些实施例中，发射相同或不同有色光的两个有源区域被定向成使得通过由底部有源区域发射的大部分光的偏振光通过的偏振器分离，并且反射多数光的偏振光 由顶部活动区域发射。 在一些实施例中，偏振器反射由波长转换层散射的光。
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2.发明授权公开(公告)号：US07808011B2
公开(公告)日：2010-10-05
申请号：US10805424
申请日：2004-03-19
IPC分类号： H01L33/00
CPC分类号： H01L33/18 , H01L25/0756 , H01L33/105 , H01L33/32 , H01L33/405 , H01L33/46 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： A semiconductor light emitting device includes an in-plane active region that emits linearly-polarized light. An in-plane active region may include, for example, a {11 20} or {10 10} InGaN light emitting layer. In some embodiments, a polarizer oriented to pass light of a polarization of a majority of light emitted by the active region serves as a contact. In some embodiments, two active regions emitting the same or different colored light are separated by a polarizer oriented to pass light of a polarization of a majority of light emitted by the bottom active region, and to reflect light of a polarization of a majority of light emitted by the top active region. In some embodiments, a polarizer reflects light scattered by a wavelength converting layer.
摘要翻译： 半导体发光器件包括发射线偏振光的面内有源区域。 面内有源区可以包括例如{11 20}或{10 10} InGaN发光层。 在一些实施例中，定向为使得由有源区域发射的大部分光的偏振的光通过的偏振片用作接触。 在一些实施例中，发射相同或不同有色光的两个有源区域被定向成使得通过由底部有源区域发射的大部分光的偏振光通过的偏振器分离，并且反射多数光的偏振光 由顶部活动区域发射。 在一些实施例中，偏振器反射由波长转换层散射的光。
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公开(公告)号：US07442965B2
公开(公告)日：2008-10-28
申请号：US11373636
申请日：2006-03-09
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/10 , H01L33/22 , H01L33/382 , H01L33/62 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： A photonic crystal structure is formed in an n-type region of a III-nitride semiconductor structure including an active region sandwiched between an n-type region and a p-type region. A reflector is formed on a surface of the p-type region opposite the active region. In some embodiments, the growth substrate on which the n-type region, active region, and p-type region are grown is removed, in order to facilitate forming the photonic crystal in an an-type region of the device, and to facilitate forming the reflector on a surface of the p-type region underlying the photonic crystal. The photonic crystal and reflector form a resonant cavity, which may allow control of light emitted by the active region.
摘要翻译： 在包括夹在n型区域和p型区域之间的有源区域的III族氮化物半导体结构的n型区域中形成光子晶体结构。 在与有源区相对的p型区域的表面上形成反射体。 在一些实施例中，除去其上生长n型区域，活性区域和p型区域的生长衬底，以便于在器件的类型区域中形成光子晶体，并且有利于形成 在光子晶体下面的p型区域的表面上的反射器。 光子晶体和反射器形成谐振腔，其可以允许控制由有源区发射的光。
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公开(公告)号：US07804100B2
公开(公告)日：2010-09-28
申请号：US11080022
申请日：2005-03-14
IPC分类号： H01L27/15
CPC分类号： H01L33/32 , H01L33/0079 , H01L33/16 , H01S5/0213 , H01S5/0215 , H01S5/0217 , H01S5/02208 , H01S5/3202 , H01S5/32341 , H01S2304/00
摘要： A device structure includes a III-nitride wurtzite semiconductor light emitting region disposed between a p-type region and an n-type region. A bonded interface is disposed between two surfaces, one of the surfaces being a surface of the device structure. The bonded interface facilitates an orientation of the wurtzite c-axis in the light emitting region that confines carriers in the light emitting region, potentially increasing efficiency at high current density.
摘要翻译： 器件结构包括设置在p型区域和n型区域之间的III族氮化物纤锌矿半导体发光区域。 键合界面设置在两个表面之间，其中一个表面是器件结构的表面。 结合界面有利于限制发光区域中的载流子的发光区域中的纤锌矿c轴的取向，在高电流密度下潜在地提高效率。
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公开(公告)号：US07675084B2
公开(公告)日：2010-03-09
申请号：US12259120
申请日：2008-10-27
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/10 , H01L33/22 , H01L33/382 , H01L33/62 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： A photonic crystal structure is formed in an n-type region of a III-nitride semiconductor structure including an active region sandwiched between an n-type region and a p-type region. A reflector is formed on a surface of the p-type region opposite the active region. In some embodiments, the growth substrate on which the n-type region, active region, and p-type region are grown is removed, in order to facilitate forming the photonic crystal in an n-type region of the device, and to facilitate forming the reflector on a surface of the p-type region underlying the photonic crystal. The photonic crystal and reflector form a resonant cavity, which may allow control of light emitted by the active region.
摘要翻译： 在包括夹在n型区域和p型区域之间的有源区域的III族氮化物半导体结构的n型区域中形成光子晶体结构。 在与有源区相对的p型区域的表面上形成反射体。 在一些实施例中，除去其上生长n型区域，活性区域和p型区域的生长衬底，以便于在器件的n型区域中形成光子晶体，并且有助于形成 在光子晶体下面的p型区域的表面上的反射器。 光子晶体和反射器形成谐振腔，其可以允许控制由有源区发射的光。
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公开(公告)号：US20090045427A1
公开(公告)日：2009-02-19
申请号：US12259120
申请日：2008-10-27
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/10 , H01L33/22 , H01L33/382 , H01L33/62 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： A photonic crystal structure is formed in an n-type region of a III-nitride semiconductor structure including an active region sandwiched between an n-type region and a p-type region. A reflector is formed on a surface of the p-type region opposite the active region. In some embodiments, the growth substrate on which the n-type region, active region, and p-type region are grown is removed, in order to facilitate forming the photonic crystal in an n-type region of the device, and to facilitate forming the reflector on a surface of the p-type region underlying the photonic crystal. The photonic crystal and reflector form a resonant cavity, which may allow control of light emitted by the active region.
摘要翻译： 在包括夹在n型区域和p型区域之间的有源区域的III族氮化物半导体结构的n型区域中形成光子晶体结构。 在与有源区相对的p型区域的表面上形成反射体。 在一些实施例中，除去其上生长n型区域，活性区域和p型区域的生长衬底，以便于在器件的n型区域中形成光子晶体，并且有助于形成 在光子晶体下面的p型区域的表面上的反射器。 光子晶体和反射器形成谐振腔，其可以允许控制由有源区发射的光。
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7.发明授权Resonant cavity III-nitride light emitting devices fabricated by growth substrate removal 有权通过生长衬底去除制造的谐振腔III族氮化物发光器件公开(公告)号：US06956246B1
公开(公告)日：2005-10-18
申请号：US10861745
申请日：2004-06-03
CPC分类号： H01L33/465 , H01L33/007 , H01L33/0079 , H01L33/22
摘要： A semiconductor light emitting device includes an n-type region, a p-type region, and light emitting region disposed between the n- and p-type regions. The n-type, p-type, and light emitting regions form a cavity having a top surface and a bottom surface. Both the top surface and the bottom surface of the cavity may have a rough surface. For example, the surface may have a plurality of peaks separated by a plurality of valleys. In some embodiments, the thickness of the cavity is kept constant by incorporating an etch-stop layer into the device, then thinning the layers of the device by a process that terminates on the etch-stop layer.
摘要翻译： 半导体发光器件包括n型区域，p型区域和设置在n型区域和p型区域之间的发光区域。 n型，p型和发光区形成具有顶表面和底表面的空腔。 空腔的顶表面和底表面都可以具有粗糙的表面。 例如，表面可以具有由多个谷分隔的多个峰。 在一些实施例中，通过将蚀刻停止层并入该器件中，使空腔的厚度保持恒定，然后通过终止于蚀刻停止层上的工艺使器件的层变薄。
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公开(公告)号：US08288186B2
公开(公告)日：2012-10-16
申请号：US12887853
申请日：2010-09-22
IPC分类号： H01L21/20 , H01L21/301
CPC分类号： H01L21/76256 , C30B25/183 , C30B29/40 , C30B29/403 , H01L21/76254 , H01L33/007 , H01L33/0079
摘要： A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.
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公开(公告)号：US20110027975A1
公开(公告)日：2011-02-03
申请号：US12887853
申请日：2010-09-22
IPC分类号： H01L21/20
CPC分类号： H01L21/76256 , C30B25/183 , C30B29/40 , C30B29/403 , H01L21/76254 , H01L33/007 , H01L33/0079
摘要： A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.
摘要翻译： 提供了包括与主体结合的主体和种子层的基板，然后在种子层上生长包括设置在n型区域和p型区域之间的发光层的半导体结构。 在一些实施方案中，结合层将主体结合到种子层。 种子层可以比用于缓和半导体结构中的应变的临界厚度薄，使得半导体结构中的应变由种子层中形成的位错或通过在种子层和结合层之间滑动而消除， 两层。 在一些实施例中，可以通过蚀刻掉粘合层来将主体与半导体结构和种子层分离。
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公开(公告)号：US08334155B2
公开(公告)日：2012-12-18
申请号：US11237164
申请日：2005-09-27
CPC分类号： H01L21/76256 , C30B25/183 , C30B29/40 , C30B29/403 , H01L21/76254 , H01L33/007 , H01L33/0079
摘要： A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.
摘要翻译： 提供了包括与主体结合的主体和种子层的基板，然后在种子层上生长包括设置在n型区域和p型区域之间的发光层的半导体结构。 在一些实施方案中，结合层将主体结合到种子层。 种子层可以比用于缓和半导体结构中的应变的临界厚度薄，使得半导体结构中的应变由种子层中形成的位错或通过在种子层和结合层之间滑动而消除， 两层。 在一些实施例中，可以通过蚀刻掉粘合层来将主体与半导体结构和种子层分离。
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