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公开(公告)号：US08288186B2
公开(公告)日：2012-10-16
申请号：US12887853
申请日：2010-09-22
IPC分类号： H01L21/20 , H01L21/301
CPC分类号： H01L21/76256 , C30B25/183 , C30B29/40 , C30B29/403 , H01L21/76254 , H01L33/007 , H01L33/0079
摘要： A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.
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公开(公告)号：US20110027975A1
公开(公告)日：2011-02-03
申请号：US12887853
申请日：2010-09-22
IPC分类号： H01L21/20
CPC分类号： H01L21/76256 , C30B25/183 , C30B29/40 , C30B29/403 , H01L21/76254 , H01L33/007 , H01L33/0079
摘要： A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.
摘要翻译： 提供了包括与主体结合的主体和种子层的基板，然后在种子层上生长包括设置在n型区域和p型区域之间的发光层的半导体结构。 在一些实施方案中，结合层将主体结合到种子层。 种子层可以比用于缓和半导体结构中的应变的临界厚度薄，使得半导体结构中的应变由种子层中形成的位错或通过在种子层和结合层之间滑动而消除， 两层。 在一些实施例中，可以通过蚀刻掉粘合层来将主体与半导体结构和种子层分离。
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3.发明申请公开(公告)号：US20100226404A1
公开(公告)日：2010-09-09
申请号：US12781935
申请日：2010-05-18
CPC分类号： H01L33/18 , H01L25/0756 , H01L33/105 , H01L33/32 , H01L33/405 , H01L33/46 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： A semiconductor light emitting device includes an in-plane active region that emits linearly-polarized light. An in-plane active region may include, for example, a {11 20} or {10 10} InGaN light emitting layer. In some embodiments, a polarizer oriented to pass light of a polarization of a majority of light emitted by the active region serves as a contact. In some embodiments, two active regions emitting the same or different colored light are separated by a polarizer oriented to pass light of a polarization of a majority of light emitted by the bottom active region, and to reflect light of a polarization of a majority of light emitted by the top active region. In some embodiments, a polarizer reflects light scattered by a wavelength converting layer.
摘要翻译： 半导体发光器件包括发射线偏振光的面内有源区域。 面内有源区可以包括例如{11 20}或{10 10} InGaN发光层。 在一些实施例中，定向为使得由有源区域发射的大部分光的偏振的光通过的偏振片用作接触。 在一些实施例中，发射相同或不同有色光的两个有源区域被定向成使得通过由底部有源区域发射的大部分光的偏振光通过的偏振器分离，并且反射多数光的偏振光 由顶部活动区域发射。 在一些实施例中，偏振器反射由波长转换层散射的光。
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4.发明授权公开(公告)号：US07808011B2
公开(公告)日：2010-10-05
申请号：US10805424
申请日：2004-03-19
IPC分类号： H01L33/00
CPC分类号： H01L33/18 , H01L25/0756 , H01L33/105 , H01L33/32 , H01L33/405 , H01L33/46 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： A semiconductor light emitting device includes an in-plane active region that emits linearly-polarized light. An in-plane active region may include, for example, a {11 20} or {10 10} InGaN light emitting layer. In some embodiments, a polarizer oriented to pass light of a polarization of a majority of light emitted by the active region serves as a contact. In some embodiments, two active regions emitting the same or different colored light are separated by a polarizer oriented to pass light of a polarization of a majority of light emitted by the bottom active region, and to reflect light of a polarization of a majority of light emitted by the top active region. In some embodiments, a polarizer reflects light scattered by a wavelength converting layer.
摘要翻译： 半导体发光器件包括发射线偏振光的面内有源区域。 面内有源区可以包括例如{11 20}或{10 10} InGaN发光层。 在一些实施例中，定向为使得由有源区域发射的大部分光的偏振的光通过的偏振片用作接触。 在一些实施例中，发射相同或不同有色光的两个有源区域被定向成使得通过由底部有源区域发射的大部分光的偏振光通过的偏振器分离，并且反射多数光的偏振光 由顶部活动区域发射。 在一些实施例中，偏振器反射由波长转换层散射的光。
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公开(公告)号：US08334155B2
公开(公告)日：2012-12-18
申请号：US11237164
申请日：2005-09-27
CPC分类号： H01L21/76256 , C30B25/183 , C30B29/40 , C30B29/403 , H01L21/76254 , H01L33/007 , H01L33/0079
摘要： A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.
摘要翻译： 提供了包括与主体结合的主体和种子层的基板，然后在种子层上生长包括设置在n型区域和p型区域之间的发光层的半导体结构。 在一些实施方案中，结合层将主体结合到种子层。 种子层可以比用于缓和半导体结构中的应变的临界厚度薄，使得半导体结构中的应变由种子层中形成的位错或通过在种子层和结合层之间滑动而消除， 两层。 在一些实施例中，可以通过蚀刻掉粘合层来将主体与半导体结构和种子层分离。
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公开(公告)号：US07488621B2
公开(公告)日：2009-02-10
申请号：US11421350
申请日：2006-05-31
申请人： John E. Epler , Paul S. Martin , Michael R. Krames
发明人： John E. Epler , Paul S. Martin , Michael R. Krames
IPC分类号： H01L21/00
CPC分类号： H01L33/48 , H01L24/73 , H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/486 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48464 , H01L2224/73265 , H01L2224/92247 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features. There is very little absorption of light by the thinned epitaxial layer, there is high thermal conductivity to the package because the LED layers are directly bonded to the package substrate without any support substrate therebetween, and there is little electrical resistance between the package and the LED layers so efficiency (light output vs. power input) is high. The light extraction features of the LED layer further improves efficiency.
摘要翻译： 在衬底上生长LED外延层（n型，p型和有源层）。 对于每个管芯，n和p层电连接到延伸超过LED管芯边界的封装衬底，使得LED层位于封装衬底和生长衬底之间。 封装衬底提供电触头和导体，导致可焊接的封装连接。 然后除去生长底物。 因为精细的LED层在附着于生长衬底的同时与封装衬底结合，所以不需要用于LED层的中间支撑衬底。 然后将与去除的生长衬底相邻的较厚的LED外延层变薄，并将其顶表面加工成掺入光提取特征。 通过减薄的外延层对光的吸收非常小，因为LED层直接接合到封装基板上而没有任何支撑基板，因此封装和LED之间的电阻很小，因此封装的导热性很高 层效率（光输出与功率输入）高。 LED层的光提取特性进一步提高了效率。
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公开(公告)号：US09911896B2
公开(公告)日：2018-03-06
申请号：US12830885
申请日：2010-07-06
CPC分类号： H01L33/007 , H01L33/08 , H01L33/12 , H01L33/22
摘要： In accordance with embodiments of the invention, at least partial strain relief in a light emitting layer of a III-nitride light emitting device is provided by configuring the surface on which at least one layer of the device grows such that the layer expands laterally and thus at least partially relaxes. This layer is referred to as the strain-relieved layer. In some embodiments, the light emitting layer itself is the strain-relieved layer, meaning that the light emitting layer is grown on a surface that allows the light emitting layer to expand laterally to relieve strain. In some embodiments, a layer grown before the light emitting layer is the strain-relieved layer. In a first group of embodiments, the strain-relieved layer is grown on a textured surface.
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公开(公告)号：US08163575B2
公开(公告)日：2012-04-24
申请号：US11156105
申请日：2005-06-17
IPC分类号： H01L21/00
CPC分类号： C30B29/60 , B82Y20/00 , G02B6/1225 , H01L33/08 , H01L33/18 , H01L33/24 , H01L2933/0083 , H01S5/105 , H01S5/34333
摘要： A photonic crystal is grown within a semiconductor structure, such as a III-nitride structure, which includes a light emitting region disposed between an n-type region and a p-type region. The photonic crystal may be multiple regions of semiconductor material separated by a material having a different refractive index than the semiconductor material. For example, the photonic crystal may be posts of semiconductor material grown in the structure and separated by air gaps or regions of masking material. Growing the photonic crystal, rather than etching a photonic crystal into an already-grown semiconductor layer, avoids damage caused by etching which may reduce efficiency, and provides uninterrupted, planar surfaces on which to form electric contacts.
摘要翻译： 光子晶体在诸如III族氮化物结构的半导体结构内生长，其包括设置在n型区域和p型区域之间的发光区域。 光子晶体可以是由具有与半导体材料不同的折射率的材料分离的半导体材料的多个区域。 例如，光子晶体可以是在结构中生长并由气隙或掩模材料区域分离的半导体材料的柱。 生长光子晶体，而不是将光子晶体蚀刻成已经生长的半导体层，避免了蚀刻造成的损伤，这可能降低效率，并提供不间断的平面，在其上形成电触点。
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9.发明授权Method of forming a composite substrate and growing a III-V light emitting device over the composite substrate 有权形成复合衬底并在复合衬底上生长III-V发光器件的方法公开(公告)号：US08105852B2
公开(公告)日：2012-01-31
申请号：US12688382
申请日：2010-01-15
CPC分类号： H01L33/007 , H01L21/02458
摘要： A method according to embodiments of the invention includes providing a substrate comprising a host and a seed layer bonded to the host. The seed layer comprises a plurality of regions. A semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region is grown on the substrate. A top surface of a semiconductor layer grown on the seed layer has a lateral extent greater than each of the plurality of seed layer regions.
摘要翻译： 根据本发明的实施方案的方法包括提供包含与宿主结合的宿主和种子层的底物。 种子层包括多个区域。 在衬底上生长包括设置在n型区域和p型区域之间的发光层的半导体结构。 在种子层上生长的半导体层的顶表面的横向范围大于多个种子层区域中的每一个。
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10.发明授权Semiconductor light emitting devices with graded composition light emitting layers 有权具有渐变成分发光层的半导体发光器件公开(公告)号：US07122839B2
公开(公告)日：2006-10-17
申请号：US10977867
申请日：2004-10-29
IPC分类号： H01L27/15
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3205 , H01S5/34333
摘要： A III-nitride light emitting layer in a semiconductor light emitting device has a graded composition. The composition of the light emitting layer may be graded such that the change in the composition of a first element is at least 0.2% per angstrom of light emitting layer. Grading in the light emitting layer may reduce problems associated with polarization fields in the light emitting layer. The light emitting layer may be, for example InxGa1−xN, AlxGa1−xN, or InxAlyGa1−x−yN.
摘要翻译： 半导体发光器件中的III族氮化物发光层具有渐变组成。 发光层的组成可以分级，使得第一元素的组成的变化为每发光层的至少0.2％。 在发光层中的分级可以减少与发光层中的极化场相关的问题。 发光层可以是例如在N 1 Ga 1-x N，Al x Ga 1-x N 2 > N，或在<！ - SIPO
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