公开(公告)号：US20120064508A1

公开(公告)日：2012-03-15

申请号：US13249426

申请日：2011-09-30

申请人： Jason D. Licamele ,  Carl L. White

发明人： Jason D. Licamele ,  Carl L. White

IPC分类号： C12Q3/00 ,  A01G1/00 ,  C12N1/12

CPC分类号： A01G33/00 ,  C12M21/02 ,  C12M23/02 ,  C12M23/34 ,  C12M27/00 ,  C12M29/00 ,  C12M29/24 ,  C12M31/02 ,  C12M31/10 ,  Y02A40/88

摘要： Disclosed herein are photobioreactor systems for high productivity aquaculture or aquafarming for growing of algae or other organisms in an aquatic environment featuring aspects that favor improved growth rates by achieving control over the contents of the growth medium, including carbon source, nitrogen source, and essential trace elements necessary for growth.

摘要翻译： 本文公开了用于生产水产养殖或水产养殖的光生物反应器系统，用于在水生环境中生长藻类或其他生物，其特征在于通过实现对生长培养基的含量的控制来改善生长速度的方面，包括碳源，氮源和必需痕迹 成长所必需的元素

公开(公告)号：US08365462B2

公开(公告)日：2013-02-05

申请号：US13149463

申请日：2011-05-31

申请人： Jason D. Licamele ,  Carl L. White

发明人： Jason D. Licamele ,  Carl L. White

IPC分类号： A01G7/02

CPC分类号： A01G33/00 ,  C12M21/02 ,  C12M23/02 ,  C12M23/34 ,  C12M27/00 ,  C12M29/00 ,  C12M29/24 ,  C12M31/02 ,  C12M31/10 ,  Y02A40/88

摘要： Disclosed herein are photobioreactor systems for high productivity aquaculture or aquafarming for growing of algae or other organisms in an aquatic environment featuring aspects that favor improved growth rates by achieving control over the contents of the growth medium, including carbon source, nitrogen source, and essential trace elements necessary for growth.

摘要翻译： 本文公开了用于生产水产养殖或水产养殖的光生物反应器系统，用于在水生环境中生长藻类或其他生物，其特征在于通过实现对生长培养基的含量的控制来改善生长速度的方面，包括碳源，氮源和必需痕迹 成长所必需的元素

公开(公告)号：US08341877B2

公开(公告)日：2013-01-01

申请号：US13249426

申请日：2011-09-30

申请人： Jason D. Licamele ,  Carl L. White

发明人： Jason D. Licamele ,  Carl L. White

IPC分类号： A01G7/02

CPC分类号： A01G33/00 ,  C12M21/02 ,  C12M23/02 ,  C12M23/34 ,  C12M27/00 ,  C12M29/00 ,  C12M29/24 ,  C12M31/02 ,  C12M31/10 ,  Y02A40/88

摘要： Disclosed herein are photobioreactor systems for high productivity aquaculture or aquafarming for growing of algae or other organisms in an aquatic environment featuring aspects that favor improved growth rates by achieving control over the contents of the growth medium, including carbon source, nitrogen source, and essential trace elements necessary for growth.

摘要翻译： 本文公开了用于生产水产养殖或水产养殖的光生物反应器系统，用于在水生环境中生长藻类或其他生物，其特征在于通过实现对生长培养基的含量的控制来改善生长速度的方面，包括碳源，氮源和必需痕迹 成长所必需的元素

公开(公告)号：US20130160709A1

公开(公告)日：2013-06-27

申请号：US13337604

申请日：2011-12-27

申请人： Carl L. White ,  Eric Shero

发明人： Carl L. White ,  Eric Shero

IPC分类号： C23C16/455

CPC分类号： C23C16/45525 ,  C23C16/4402 ,  C23C16/4408 ,  C23C16/45544 ,  C23C16/45561

摘要： A device for performing ALD includes a housing having a vacuum chamber that surrounds a horizontal flow reactor. The device further includes a gas distribution system for delivering gases to the reactor. The gas distribution system includes at least one of a high temperature valve and a high temperature filter disposed inside the vacuum chamber. The high temperature valve (and/or filter) controls (and/or filters) a supply of a precursor/reactant gas, inert gas, or precursor/reactant and inert gas mixture before it enters the horizontal flow reactor.

摘要翻译： 用于执行ALD的装置包括具有围绕水平流动反应器的真空室的壳体。 该装置还包括用于将气体输送到反应器的气体分配系统。 气体分配系统包括设置在真空室内的高温阀和高温过滤器中的至少一个。 在进入水平流动反应器之前，高温阀（和/或过滤器）控制（和/或过滤）前体/反应物气体，惰性气体或前体/反应物和惰性气体混合物的供应。

公开(公告)号：US5370739A

公开(公告)日：1994-12-06

申请号：US899826

申请日：1992-06-15

申请人： Robert F. Foster ,  Helen E. Rebenne ,  Rene E. LeBlanc ,  Carl L. White ,  Rikhit Arora

发明人： Robert F. Foster ,  Helen E. Rebenne ,  Rene E. LeBlanc ,  Carl L. White ,  Rikhit Arora

IPC分类号： C23C16/14 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/48 ,  C23C16/54 ,  H01L21/285 ,  H01L21/683 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/45508 ,  C23C16/45521 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/466 ,  C23C16/54 ,  H01L21/6838

摘要： A semiconductor wafer processing apparatus or module for a cluster tool is provided with a single wafer rotating susceptor that thins the gas boundary layer to facilitate the transfer of material to or from the wafer, in, for example, CVD for blanket or selective deposition of tungsten or titanium nitride, and degassing and annealing processes. Preferably, a downwardly facing showerhead directs a gas mixture from a cooled mixing chamber onto a rapidly rotating wafer, for example at from 500 to 1500 RPM, thinning a boundary layer for gas flowing radially outwardly from a stagnation point at the wafer center. Smoothly shaped interior reactor surfaces include baffles and plasma cleaning electrodes to minimize turbulence. Inert gases from within the rotating susceptor minimize turbulence by filling gaps in structure, prevent contamination of moving parts, conduct heat between the susceptor and the wafer, and vacuum clamp the wafer to the susceptor. A susceptor lip surrounds the wafer and is removable for cleaning, to accommodate different size wafers, and allows change of lip materials to for different processes, such as, one which will resist deposits during selective CVD, or one which scavenges unspent gases in blanket CVD. The lip smooths gas flow, reduces thermal gradients at the wafer edge.

摘要翻译： 用于集群工具的半导体晶片处理装置或模块设置有单个晶片旋转基座，其使气体边界层变薄，以便于将材料转移到晶片或从晶片转移，例如用于覆盖或选择性沉积钨的CVD 或氮化钛，以及脱气和退火工艺。 优选地，面向下的喷头将来自冷却的混合室的气体混合物引导到快速旋转的晶片上，例如以500至1500RPM，从而在晶片中心的停滞点径向向外流动的气体的边界层变薄。 平滑形状的内部反应器表面包括挡板和等离子体清洁电极，以最小化湍流。 来自旋转基座内的惰性气体通过填充结构间隙来最小化湍流，防止运动部件的污染，在基座和晶片之间传导热量，并将晶片真空夹紧到基座。 感受体唇缘围绕晶片并且可移除以用于清洁，以适应不同尺寸的晶片，并且允许将唇缘材料改变为用于不同过程的唇缘材料，例如在选择性CVD期间将抵抗沉积物的唇缘材料，或者在毯式CVD中清除未使用气体的那些 。 唇缘平滑气流，降低了晶片边缘的热梯度。

公开(公告)号：US5356476A

公开(公告)日：1994-10-18

申请号：US898800

申请日：1992-06-15

申请人： Robert F. Foster ,  Helen E. Rebenne ,  Rene E. LeBlanc ,  Carl L. White ,  Rikhit Arora

发明人： Robert F. Foster ,  Helen E. Rebenne ,  Rene E. LeBlanc ,  Carl L. White ,  Rikhit Arora

IPC分类号： H01L21/205 ,  C23C16/14 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/54 ,  H01L21/00 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/14 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/4405 ,  C23C16/455 ,  C23C16/45502 ,  C23C16/45512 ,  C23C16/45521 ,  C23C16/45591 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/466 ,  C23C16/54 ,  H01L21/67109

摘要： A semiconductor wafer processing apparatus is provided with a susceptor for supporting a wafer for CVD of films such as blanket or selective deposition of tungsten or titanium nitride, and degassing and annealing processes. Preferably, a downwardly facing showerhead directs a gas mixture from a cooled mixing chamber onto an upwardly facing wafer on the susceptor. Smooth interior reactor surfaces include baffles and a susceptor lip and wall shaped to minimize turbulence. Inert gases flow to minimize turbulence by filling gaps in susceptor structure, prevent contamination of moving parts, conduct heat between the susceptor and the wafer, and vacuum clamp the wafer to the susceptor. A susceptor lip surrounds the wafer and is removable for cleaning, to accommodate different size wafers, and allows change of lip materials to for different processes, such as, one which will resist deposits during selective CVD, or one which scavenges unspent gases in blanket CVD. The lip smooths gas flow, reduces thermal gradients at the wafer edge. The susceptor design reduces heat flow from the susceptor to other reactor parts by conduction or radiation.

摘要翻译： 半导体晶片处理装置设置有用于支撑诸如覆盖或选择性沉积钨或氮化钛的膜的CVD晶片的基座，以及脱气和退火工艺。 优选地，面向下的喷头将来自冷却的混合室的气体混合物引导到基座上的朝上的晶片上。 平滑的内部反应器表面包括挡板和基座唇缘和壁形，以最小化湍流。 惰性气体通过填充基座结构中的间隙来减少湍流，防止运动部件的污染，在基座和晶片之间传导热量，并将晶片真空夹紧到基座。 感受体唇缘围绕晶片并且可移除以用于清洁，以适应不同尺寸的晶片，并且允许将唇缘材料改变为用于不同过程的唇缘材料，例如在选择性CVD期间将抵抗沉积物的唇缘材料，或者在毯式CVD中清除未使用气体的那些 。 唇缘平滑气流，降低了晶片边缘的热梯度。 基座设计通过传导或辐射减少从基座到其他反应器部件的热流。

公开(公告)号：US20100266765A1

公开(公告)日：2010-10-21

申请号：US12427690

申请日：2009-04-21

申请人： Carl L. White ,  Eric J. Shero

发明人： Carl L. White ,  Eric J. Shero

IPC分类号： C23C16/44 ,  C23C16/54

CPC分类号： C23C16/45527 ,  C23C16/45544 ,  C23C16/45561

摘要： An apparatus and method of growing a thin film onto a substrate comprises placing a substrate in a reaction chamber and subjecting the substrate to surface reactions of a plurality of vapor-phase reactants according to the ALD method. Non-fully closing valves are placed into the reactant feed conduit and backsuction conduit of an ALD system. The non-fully closed valves are operated such that one valve is open and the other valve is closed during the purge or pulse cycle of the ALD process.

摘要翻译： 将薄膜生长到基板上的装置和方法包括将基板放置在反应室中，并使基板根据ALD方法对多个气相反应物进行表面反应。 非完全关闭阀被放置在ALD系统的反应物进料管道和反向导管中。 操作非完全关闭的阀门，使得一个阀门打开，另一个阀门在ALD过程的清洗或脉冲循环期间关闭。

公开(公告)号：US20080085226A1

公开(公告)日：2008-04-10

申请号：US11870374

申请日：2007-10-10

申请人： Kyle Fondurulia ,  Eric Shero ,  Mohith E. Verghese ,  Carl L. White

发明人： Kyle Fondurulia ,  Eric Shero ,  Mohith E. Verghese ,  Carl L. White

IPC分类号： B01J19/00 ,  F28D21/00

CPC分类号： C23C16/4481 ,  C23C16/4401 ,  C23C16/4402

摘要： A precursor source vessel comprises a vessel body, a passage within the vessel body, and a valve attached to a surface of the body. An internal chamber is adapted to contain a chemical reactant, and the passage extends from outside the body to the chamber. The valve regulates flow through the passage. The vessel has inlet and outlet valves, and optionally a vent valve for venting internal gas. An external gas panel can include at least one valve fluidly interposed between the outlet valve and a substrate reaction chamber. Gas panel valves can each be positioned along a plane that is generally parallel to, and no more than about 10.0 cm from, a flat surface of the vessel. Filters in a vessel lid or wall filter gas flow through the vessel's valves. A quick-connection assembly allows fast and easy connection of the vessel to a gas panel.

摘要翻译： 前体源容器包括容器主体，容器主体内的通道和附接到主体表面的阀。 内部腔室适于容纳化学反应物，并且通道从身体外部延伸到腔室。 阀调节通过通道的流量。 容器具有入口和出口阀，并且可选地用于排放内部气体的排气阀。 外部气体面板可以包括流体地介于出口阀和基板反应室之间的至少一个阀。 气体面板阀可以分别沿着与容器的平坦表面大致平行且不超过约10.0cm的平面定位。 容器盖中的过滤器或壁过滤气体流过容器的阀门。 快速连接组件允许快速和容易地将容器连接到气体面板。

公开(公告)号：US20100322604A1

公开(公告)日：2010-12-23

申请号：US12763037

申请日：2010-04-19

申请人： Kyle Fondurulia ,  Eric Shero ,  Mohith E. Verghese ,  Carl L. White

发明人： Kyle Fondurulia ,  Eric Shero ,  Mohith E. Verghese ,  Carl L. White

IPC分类号： F24H1/20

CPC分类号： C23C16/4481

摘要： A precursor source vessel for providing vaporized precursor to a reaction chamber is provided. The precursor source vessel includes a lid having a first port, a second port, and a third port. The precursor source vessel also includes a base removably attached to the lid. The base includes a recessed region formed therein. One of the first, second, and third ports is a burp port configured to relieve the head pressure within the source vessel after the source vessel is installed but prior to use of the source vessel in semiconductor processing.

摘要翻译： 提供了一种用于向反应室提供蒸发的前体的前体源容器。 前体源容器包括具有第一端口，第二端口和第三端口的盖。 前体源容器还包括可移除地附接到盖的基座。 底座包括形成在其中的凹陷区域。 第一，第二和第三端口之一是打孔口，其构造成在源容器安装之后但在半导体加工中使用源容器之前减轻源容器内的头部压力。

公开(公告)号：US07571893B2

公开(公告)日：2009-08-11

申请号：US11560771

申请日：2006-11-16

申请人： Carl L. White ,  Paul G. Curry

发明人： Carl L. White ,  Paul G. Curry

IPC分类号： F16K1/42

CPC分类号： F16K7/12 ,  C23C16/44 ,  C23C16/45561 ,  F16K25/005

摘要： A valve comprises a valve seat and a movable diaphragm. The valve seat defines a fluid orifice and is formed at least partially of polybenzimidazole. The diaphragm is sized and configured to bear against the fluid orifice to substantially block fluid flow through the orifice. The valve is advantageously used in a hot zone of a semiconductor processing system.

摘要翻译： 阀包括阀座和可移动隔膜。 阀座限定了流体孔，并且至少部分地由聚苯并咪唑形成。 隔膜的尺寸和构造适于承受流体孔口，以基本上阻挡流过孔的流体流动。 该阀有利地用于半导体处理系统的热区。