公开(公告)号：US20130062723A1

公开(公告)日：2013-03-14

申请号：US13229749

申请日：2011-09-11

申请人： Jason Patrick Henning ,  Qingchun Zhang ,  Sei-Hyung Ryu ,  Anant Agarwal ,  John Williams Palmour ,  Scott Allen

发明人： Jason Patrick Henning ,  Qingchun Zhang ,  Sei-Hyung Ryu ,  Anant Agarwal ,  John Williams Palmour ,  Scott Allen

IPC分类号： H01L29/872

CPC分类号： H01L29/872 ,  H01L29/0619 ,  H01L29/0661 ,  H01L29/1608 ,  H01L29/8611 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/00 ,  H01L2224/05552

摘要： The present disclosure generally relates to a Schottky diode that has a substrate, a drift layer provided over the substrate, and a Schottky layer provided over an active region of the drift layer. The metal for the Schottky layer and the semiconductor material for the drift layer are selected to provide a low barrier height Schottky junction between the drift layer and the Schottky layer.

公开(公告)号：US20130062619A1

公开(公告)日：2013-03-14

申请号：US13229750

申请日：2011-09-11

申请人： Jason Patrick Henning ,  Qingchun Zhang ,  Sei-Hyung Ryu ,  Anant Agarwal ,  John Williams Palmour ,  Scott Allen

发明人： Jason Patrick Henning ,  Qingchun Zhang ,  Sei-Hyung Ryu ,  Anant Agarwal ,  John Williams Palmour ,  Scott Allen

IPC分类号： H01L29/872

CPC分类号： H01L29/872 ,  H01L29/0619 ,  H01L29/0661 ,  H01L29/8611 ,  H01L2224/04042 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/00 ,  H01L2224/05552

摘要： Elements of an edge termination structure, such as multiple concentric guard rings, are effectively doped regions in a drift layer. To increase the depth of these doped regions, individual recesses may be formed in a surface of the drift layer where the elements of the edge termination structure are to be formed. Once the recesses are formed in the drift layer, these areas about and at the bottom of the recesses are doped to form the respective edge termination elements.

摘要翻译： 边缘终端结构的元件，例如多个同心保护环，是漂移层中的有效掺杂区域。 为了增加这些掺杂区域的深度，可以在要形成边缘终端结构的元件的漂移层的表面中形成各自的凹部。 一旦凹陷形成在漂移层中，凹槽周围和底部的这些区域被掺杂以形成相应的边缘终端元件。

公开(公告)号：US08618582B2

公开(公告)日：2013-12-31

申请号：US13229750

申请日：2011-09-11

申请人： Jason Patrick Henning ,  Qingchun Zhang ,  Sei-Hyung Ryu ,  Anant Agarwal ,  John Williams Palmour ,  Scott Allen

发明人： Jason Patrick Henning ,  Qingchun Zhang ,  Sei-Hyung Ryu ,  Anant Agarwal ,  John Williams Palmour ,  Scott Allen

IPC分类号： H01L29/66

CPC分类号： H01L29/872 ,  H01L29/0619 ,  H01L29/0661 ,  H01L29/8611 ,  H01L2224/04042 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/00 ,  H01L2224/05552

摘要： Elements of an edge termination structure, such as multiple concentric guard rings, are effectively doped regions in a drift layer. To increase the depth of these doped regions, individual recesses may be formed in a surface of the drift layer where the elements of the edge termination structure are to be formed. Once the recesses are formed in the drift layer, these areas about and at the bottom of the recesses are doped to form the respective edge termination elements.

摘要翻译： 边缘终端结构的元件，例如多个同心保护环，是漂移层中的有效掺杂区域。 为了增加这些掺杂区域的深度，可以在要形成边缘终端结构的元件的漂移层的表面中形成各自的凹部。 一旦凹陷形成在漂移层中，凹槽周围和底部的这些区域被掺杂以形成相应的边缘终端元件。

公开(公告)号：US20130062620A1

公开(公告)日：2013-03-14

申请号：US13229752

申请日：2011-09-11

申请人： Jason Patrick Henning ,  Qingchun Zhang ,  Sei-Hyung Ryu ,  Anant Agarwal ,  John Williams Palmour ,  Scott Allen

发明人： Jason Patrick Henning ,  Qingchun Zhang ,  Sei-Hyung Ryu ,  Anant Agarwal ,  John Williams Palmour ,  Scott Allen

IPC分类号： H01L29/872 ,  H01L29/24

CPC分类号： H01L29/872 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/66143 ,  H01L2224/02166 ,  H01L2924/13055 ,  H01L2924/00

摘要： The present disclosure generally relates to a Schottky diode that has a substrate, a drift layer provided over the substrate, and a Schottky layer provided over an active region of the substrate. A junction barrier array is provided in the drift layer just below the Schottky layer. The elements of the junction barrier array are generally doped regions in the drift layer. To increase the depth of these doped regions, individual recesses may be formed in the surface of the drift layer where the elements of the junction barrier array are to be formed. Once the recesses are formed in the drift layer, areas about and at the bottom of the recesses are doped to form the respective elements of the junction barrier array.

摘要翻译： 本发明一般涉及一种肖特基二极管，其具有衬底，设置在衬底上的漂移层以及设置在衬底的有源区上的肖特基层。 在位于肖特基层正下方的漂移层中提供了结屏障阵列。 结势垒阵列的元件通常是漂移层中的掺杂区域。 为了增加这些掺杂区域的深度，可以在要形成结屏障阵列的元件的漂移层的表面中形成单独的凹槽。 一旦凹陷形成在漂移层中，则凹部周围和底部的区域被掺杂以形成连接屏障阵列的相应元件。

公开(公告)号：US08680587B2

公开(公告)日：2014-03-25

申请号：US13229749

申请日：2011-09-11

申请人： Jason Patrick Henning ,  Qingchun Zhang ,  Sei-Hyung Ryu ,  Anant Agarwal ,  John Williams Palmour ,  Scott Allen

发明人： Jason Patrick Henning ,  Qingchun Zhang ,  Sei-Hyung Ryu ,  Anant Agarwal ,  John Williams Palmour ,  Scott Allen

IPC分类号： H01L29/66

CPC分类号： H01L29/872 ,  H01L29/0619 ,  H01L29/0661 ,  H01L29/1608 ,  H01L29/8611 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05567 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2924/12032 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/00 ,  H01L2224/05552

摘要： The present disclosure generally relates to a Schottky diode that has a substrate, a drift layer provided over the substrate, and a Schottky layer provided over an active region of the drift layer. The metal for the Schottky layer and the semiconductor material for the drift layer are selected to provide a low barrier height Schottky junction between the drift layer and the Schottky layer.

摘要翻译： 本公开总体上涉及具有衬底，设置在衬底上的漂移层和设置在漂移层的有源区上的肖特基层的肖特基二极管。 选择用于肖特基金属的金属和用于漂移层的半导体材料以在漂移层和肖特基层之间提供低势垒高度的肖特基结。

公开(公告)号：US08664665B2

公开(公告)日：2014-03-04

申请号：US13229752

申请日：2011-09-11

申请人： Jason Patrick Henning ,  Qingchun Zhang ,  Sei-Hyung Ryu ,  Anant Agarwal ,  John Williams Palmour ,  Scott Allen

发明人： Jason Patrick Henning ,  Qingchun Zhang ,  Sei-Hyung Ryu ,  Anant Agarwal ,  John Williams Palmour ,  Scott Allen

IPC分类号： H01L29/15

CPC分类号： H01L29/872 ,  H01L29/0619 ,  H01L29/1608 ,  H01L29/66143 ,  H01L2224/02166 ,  H01L2924/13055 ,  H01L2924/00

摘要： The present disclosure generally relates to a Schottky diode that has a substrate, a drift layer provided over the substrate, and a Schottky layer provided over an active region of the substrate. A junction barrier array is provided in the drift layer just below the Schottky layer. The elements of the junction barrier array are generally doped regions in the drift layer. To increase the depth of these doped regions, individual recesses may be formed in the surface of the drift layer where the elements of the junction barrier array are to be formed. Once the recesses are formed in the drift layer, areas about and at the bottom of the recesses are doped to form the respective elements of the junction barrier array.

摘要翻译： 本发明一般涉及一种肖特基二极管，其具有衬底，设置在衬底上的漂移层以及设置在衬底的有源区上的肖特基层。 在位于肖特基层正下方的漂移层中提供了结屏障阵列。 结势垒阵列的元件通常是漂移层中的掺杂区域。 为了增加这些掺杂区域的深度，可以在要形成结屏障阵列的元件的漂移层的表面中形成单独的凹槽。 一旦凹陷形成在漂移层中，则凹部周围和底部的区域被掺杂以形成连接屏障阵列的相应元件。

公开(公告)号：US20130207123A1

公开(公告)日：2013-08-15

申请号：US13588329

申请日：2012-08-17

申请人： Jason Patrick Henning ,  Qingchun Zhang ,  Sei-Hyung Ryu ,  Anant Kumar Agarwal ,  John Williams Palmour ,  Scott Allen

发明人： Jason Patrick Henning ,  Qingchun Zhang ,  Sei-Hyung Ryu ,  Anant Kumar Agarwal ,  John Williams Palmour ,  Scott Allen

IPC分类号： H01L29/16 ,  H01L27/06

CPC分类号： H01L29/7805 ,  H01L21/046 ,  H01L21/049 ,  H01L25/18 ,  H01L27/0629 ,  H01L29/045 ,  H01L29/0696 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/7806 ,  H01L2924/0002 ,  H01L2924/13091 ,  H02M7/003 ,  H02P7/04 ,  H01L2924/00

摘要： A power module is disclosed that includes a housing with an interior chamber wherein multiple switch modules are mounted within the interior chamber. The switch modules comprise multiple transistors and diodes that are interconnected to facilitate switching power to a load. In one embodiment, at least one of the switch modules supports a current density of at least 10 amperes per cm2.

摘要翻译： 公开了一种功率模块，其包括具有内部室的壳体，其中多个开关模块安装在内部室内。 开关模块包括多个晶体管和二极管，这些晶体管和二极管互连以便于将功率切换到负载。 在一个实施例中，至少一个开关模块支持每平方厘米至少10安培的电流密度。

公开(公告)号：US09673283B2

公开(公告)日：2017-06-06

申请号：US13588329

申请日：2012-08-17

申请人： Jason Patrick Henning ,  Qingchun Zhang ,  Sei-Hyung Ryu ,  Anant Kumar Agarwal ,  John Williams Palmour ,  Scott Allen

发明人： Jason Patrick Henning ,  Qingchun Zhang ,  Sei-Hyung Ryu ,  Anant Kumar Agarwal ,  John Williams Palmour ,  Scott Allen

IPC分类号： H01L29/16 ,  H01L29/739 ,  H01L29/78 ,  H01L29/06 ,  H01L21/04 ,  H01L27/06 ,  H01L25/18 ,  H01L29/66 ,  H01L29/04 ,  H02M7/00 ,  H02P7/03

CPC分类号： H01L29/7805 ,  H01L21/046 ,  H01L21/049 ,  H01L25/18 ,  H01L27/0629 ,  H01L29/045 ,  H01L29/0696 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/7806 ,  H01L2924/0002 ,  H01L2924/13091 ,  H02M7/003 ,  H02P7/04 ,  H01L2924/00

摘要： A power module is disclosed that includes a housing with an interior chamber wherein multiple switch modules are mounted within the interior chamber. The switch modules comprise multiple transistors and diodes that are interconnected to facilitate switching power to a load. In one embodiment, at least one of the switch modules supports a current density of at least 10 amperes per cm2.

公开(公告)号：US20120329216A1

公开(公告)日：2012-12-27

申请号：US13229266

申请日：2011-09-09

申请人： Sarit Dhar ,  Lin Cheng ,  Sei-Hyung Ryu ,  Anant Agarwal ,  John Williams Palmour ,  Erik Maki ,  Jason Gurganus ,  Daniel Jenner Lichtenwalner

发明人： Sarit Dhar ,  Lin Cheng ,  Sei-Hyung Ryu ,  Anant Agarwal ,  John Williams Palmour ,  Erik Maki ,  Jason Gurganus ,  Daniel Jenner Lichtenwalner

IPC分类号： H01L21/28 ,  H01L21/331 ,  H01L21/336

CPC分类号： H01L29/7802 ,  H01L21/02142 ,  H01L21/02164 ,  H01L21/02172 ,  H01L21/02175 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/02288 ,  H01L21/02378 ,  H01L21/045 ,  H01L21/049 ,  H01L29/0619 ,  H01L29/1606 ,  H01L29/1608 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/7395 ,  H01L29/78 ,  H01L29/7813

摘要： Embodiments of a semiconductor device having increased channel mobility and methods of manufacturing thereof are disclosed. In one embodiment, the semiconductor device includes a substrate including a channel region and a gate stack on the substrate over the channel region. The gate stack includes an alkaline earth metal. In one embodiment, the alkaline earth metal is Barium (Ba). In another embodiment, the alkaline earth metal is Strontium (Sr). The alkaline earth metal results in a substantial improvement of the channel mobility of the semiconductor device.

摘要翻译： 公开了具有增加的信道移动性的半导体器件及其制造方法的实施例。 在一个实施例中，半导体器件包括在沟道区上的衬底上包括沟道区和栅叠层的衬底。 栅极堆叠包括碱土金属。 在一个实施方案中，碱土金属是钡（Ba）。 在另一个实施方案中，碱土金属是锶（Sr）。 碱土金属导致半导体器件的沟道迁移率的显着改善。

公开(公告)号：US09396946B2

公开(公告)日：2016-07-19

申请号：US13229266

申请日：2011-09-09

申请人： Sarit Dhar ,  Lin Cheng ,  Sei-Hyung Ryu ,  Anant Agarwal ,  John Williams Palmour ,  Erik Maki ,  Jason Gurganus ,  Daniel Jenner Lichtenwalner

发明人： Sarit Dhar ,  Lin Cheng ,  Sei-Hyung Ryu ,  Anant Agarwal ,  John Williams Palmour ,  Erik Maki ,  Jason Gurganus ,  Daniel Jenner Lichtenwalner

IPC分类号： H01L21/3205 ,  H01L21/04 ,  H01L21/02 ,  H01L29/51 ,  H01L29/739 ,  H01L29/78 ,  H01L29/06 ,  H01L29/16

CPC分类号： H01L29/7802 ,  H01L21/02142 ,  H01L21/02164 ,  H01L21/02172 ,  H01L21/02175 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/02288 ,  H01L21/02378 ,  H01L21/045 ,  H01L21/049 ,  H01L29/0619 ,  H01L29/1606 ,  H01L29/1608 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/7395 ,  H01L29/78 ,  H01L29/7813

摘要： Embodiments of a semiconductor device having increased channel mobility and methods of manufacturing thereof are disclosed. In one embodiment, the semiconductor device includes a substrate including a channel region and a gate stack on the substrate over the channel region. The gate stack includes an alkaline earth metal. In one embodiment, the alkaline earth metal is Barium (Ba). In another embodiment, the alkaline earth metal is Strontium (Sr). The alkaline earth metal results in a substantial improvement of the channel mobility of the semiconductor device.

摘要翻译： 公开了具有增加的信道移动性的半导体器件及其制造方法的实施例。 在一个实施例中，半导体器件包括在沟道区上的衬底上包括沟道区和栅叠层的衬底。 栅极堆叠包括碱土金属。 在一个实施方案中，碱土金属是钡（Ba）。 在另一个实施方案中，碱土金属是锶（Sr）。 碱土金属导致半导体器件的沟道迁移率的显着改善。