公开(公告)号：US06429458B1

公开(公告)日：2002-08-06

申请号：US09628905

申请日：2000-07-31

Applicant: Jason W. Weigold ,  Stella W. Pang

Inventor： Jason W. Weigold ,  Stella W. Pang

IPC: H01L27108

CPC classification number: B81C1/00246 ,  B81B2201/0271 ,  B81C2201/0136 ,  B81C2203/0735

Abstract: A monolithic sensor including a doped mechanical structure is movably supported by but electrically isolated from a single crystal semiconductor substrate of the sensor through a relatively simple process. The sensor is preferably made from a single crystal silicon substrate using front-side release etch-diffusion. Thick single crystal Si micromechanical devices are combined with a conventional bipolar complimentary metal oxide semiconductor (BiCMOS) integrated circuit process. This merged process allows the integration of Si mechanical resonators as thick as 15 &mgr;m thick or more with any conventional integrated circuit process with the addition of only a single masking step. The process does not require the use of Si on insulator wafers or any type of wafer bonding. The Si resonators are etched in an inductively coupled plasma source which allows deep trenches to be fabricated with high aspect ratios and smooth sidewall surfaces. Clamped-clamped beam Si resonators 500 &mgr;m long, 5 &mgr;m wide, and 11 &mgr;m thick are disclosed. A typical resonator had a resonance frequency of 28.9 kHz and an amplitude of vibration at resonance of 4.6 &mgr;m in air. Working NMOS transistors are fabricated on the same chip as the resonator with measured threshold voltages of 0.6 V and an output conductance of 2.0×10−5&OHgr;−1 for a gage voltage of 4 V.

Abstract translation: 包括掺杂机械结构的单片传感器通过相对简单的过程可移动地支撑，但是与传感器的单晶半导体衬底电隔离。 该传感器优选由使用前侧释放蚀刻扩散的单晶硅衬底制成。 厚单晶Si微机械器件与传统的双极互补金属氧化物半导体（BiCMOS）集成电路工艺相结合。 这种合并过程允许将Si机械谐振器与任何传统的集成电路过程一体化，厚度为15μm或更大，仅添加单个掩蔽步骤。 该方法不需要使用绝缘体上硅晶片或任何类型的晶片接合。 Si谐振器在电感耦合等离子体源中蚀刻，其允许以高纵横比和平滑的侧壁表面制造深沟槽。 公开了500毫米长，5微米宽和11微米厚的夹紧夹紧光束Si谐振器。 典型的谐振器的共振频率为28.9kHz，共振振幅在空气中为4.6mum。 工作的NMOS晶体管制造在与谐振器相同的芯片上，测量的阈值电压为0.6 V，输出电导率为2.0x10-5OMEGA-1，表示电压为4 V.

公开(公告)号：US6136630A

公开(公告)日：2000-10-24

申请号：US325204

申请日：1999-06-03

Applicant: Jason W. Weigold ,  Stella W. Pang

Inventor： Jason W. Weigold ,  Stella W. Pang

IPC: B81B3/00 ,  H01L21/00

CPC classification number: B81C1/00246 ,  B81B2201/0271 ,  B81C2201/0136 ,  B81C2203/0735

Abstract: A monolithic sensor including a doped mechanical structure is movably supported by but electrically isolated from a single crystal semiconductor substrate of the sensor through a relatively simple process. The sensor is preferably made from a single crystal silicon substrate using front-side release etch-diffusion. Thick single crystal Si micromechanical devices are combined with a conventional bipolar complimentary metal oxide semiconductor (BiCMOS) integrated circuit process. This merged process allows the integration of Si mechanical resonators as thick as 15 .mu.m thick or more with any conventional integrated circuit process with the addition of only a single masking step. The process does not require the use of Si on insulator wafers or any type of wafer bonding. The Si resonators are etched in an inductively coupled plasma source which allows deep trenches to be fabricated with high aspect ratios and smooth sidewall surfaces. Clamped-clamped beam Si resonators 500 .mu.m long, 5 .mu.m wide, and 11 .mu.m thick are disclosed. A typical resonator had a resonance frequency of 28.9 kHz and an amplitude of vibration at resonance of 4.6 .mu.m in air. Working NMOS transistors are fabricated on the same chip as the resonator with measured threshold voltages of 0.6 V and an output conductance of 2.0.times.10.sup.-5 .OMEGA..sup.-1 for a gage voltage of 4 V.

Abstract translation: 包括掺杂机械结构的单片传感器通过相对简单的过程可移动地支撑，但是与传感器的单晶半导体衬底电隔离。 该传感器优选由使用前侧释放蚀刻扩散的单晶硅衬底制成。 厚单晶Si微机械器件与传统的双极互补金属氧化物半导体（BiCMOS）集成电路工艺相结合。 这种合并过程允许将Si机械谐振器与任何传统的集成电路工艺一样厚到15微米或更厚，只加上一个掩蔽步骤。 该方法不需要使用绝缘体上硅晶片或任何类型的晶片接合。 Si谐振器在电感耦合等离子体源中蚀刻，其允许以高纵横比和平滑的侧壁表面制造深沟槽。 公开了长500米，宽5微米，厚11微米的夹紧束式Si共振器。 典型的谐振器的共振频率为28.9kHz，共振振幅为4.6μm。 工作的NMOS晶体管制造在与谐振器相同的芯片上，其测量的阈值电压为0.6V，输出电导为2.0×10-5ΩEGA-1，对于量具电压为4V。

公开(公告)号：US07633360B2

公开(公告)日：2009-12-15

申请号：US11535807

申请日：2006-09-27

Applicant: Jason W. Weigold

Inventor： Jason W. Weigold

IPC: H03H9/24 ,  H03H9/46 ,  H03H9/50 ,  H03B5/30

CPC classification number: H03H9/2431 ,  H03H2009/02354 ,  H03H2009/02496 ,  H03H2009/02503

Abstract: A MEMS resonator has an outer element having an inner surface, the inner surface defining an area and a inner element coupled to the outer element and disposed within the area. The MEMS resonator also has an actuation electrode, in communication with the outer element, for generating electrostatic signals that cause the inner element to flex in a periodic manner.

Abstract translation: MEMS谐振器具有外部元件，其具有内表面，内表面限定区域，内部元件联接到外部元件并且设置在该区域内。 MEMS谐振器还具有与外部元件连通的致动电极，用于产生使内部元件以周期性方式弯曲的静电信号。

公开(公告)号：US08169042B2

公开(公告)日：2012-05-01

申请号：US12845348

申请日：2010-07-28

Applicant: Jason W. Weigold ,  John R. Martin ,  Timothy J. Brosnihan

Inventor： Jason W. Weigold ,  John R. Martin ,  Timothy J. Brosnihan

IPC: G01L9/00 ,  H01L21/00 ,  G10K13/00

CPC classification number: H04R19/005 ,  B81B2201/0257 ,  B81C1/00246 ,  B81C2203/0728 ,  H04R1/04 ,  H04R19/04 ,  H04R31/006

Abstract: A method of forming a microphone having a variable capacitance first deposits high temperature deposition material on a die. The high temperature material ultimately forms structure that contributes to the variable capacitance. The method then forms circuitry on the die after depositing the deposition material. The circuitry is configured to detect the variable capacitance.

Abstract translation: 形成具有可变电容的麦克风的方法首先将高温沉积材料沉积在模具上。 高温材料最终形成有助于可变电容的结构。 该方法然后在沉积沉积材料之后在管芯上形成电路。 电路被配置为检测可变电容。

公开(公告)号：US07961897B2

公开(公告)日：2011-06-14

申请号：US11476378

申请日：2006-06-28

Applicant: Jason W. Weigold

Inventor： Jason W. Weigold

IPC: H04R25/00

CPC classification number: H04R31/003 ,  G01L9/0042 ,  H04R7/14 ,  H04R19/005 ,  H04R19/04 ,  H04R27/00 ,  H04R31/00 ,  H04R2499/11 ,  Y10T29/43 ,  Y10T29/49005

Abstract: A microphone is formed to have a diaphragm that is configured to improve signal to noise ratio. To that end, the microphone has a backplate having a hole therethrough, and a diaphragm movably coupled with the backplate. The diaphragm has a bottom surface (facing the backplate) with a convex portion aligned with the hole in the backplate.

Abstract translation: 麦克风被形成为具有被配置为提高信噪比的隔膜。 为此，麦克风具有穿过其中的孔的背板，以及与该背板可移动地联接的隔膜。 隔膜具有与背板中的孔对准的凸部的底面（面对背板）。

公开(公告)号：US20110103622A1

公开(公告)日：2011-05-05

申请号：US12981949

申请日：2010-12-30

Applicant: Jason W. Weigold

Inventor： Jason W. Weigold

IPC: H04R11/04

CPC classification number: H04R3/00 ,  B81B2201/0235 ,  B81B2201/0257 ,  B81C1/00182 ,  H01L2224/48137 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2924/15151 ,  H04R19/005 ,  H04R2499/11

Abstract: A microphone includes a diaphragm assembly supported by a substrate. The diaphragm assembly includes at least one carrier, a diaphragm, and at least one spring coupling the diaphragm to the at least one carrier such that the diaphragm is spaced from the at least one carrier. An insulator (or separate insulators) between the substrate and the at least one carrier electrically isolates the diaphragm and the substrate.

Abstract translation: 麦克风包括由基板支撑的隔膜组件。 隔膜组件包括至少一个载体，隔膜和至少一个弹簧，其将隔膜耦合到至少一个载体，使得隔膜与至少一个载体间隔开。 衬底和至少一个载体之间的绝缘体（或单独的绝缘体）电隔离隔膜和衬底。

公开(公告)号：US07795695B2

公开(公告)日：2010-09-14

申请号：US11535804

申请日：2006-09-27

Applicant: Jason W. Weigold ,  John R. Martin ,  Timothy J. Brosnihan

Inventor： Jason W. Weigold ,  John R. Martin ,  Timothy J. Brosnihan

IPC: H01L29/84 ,  H04R25/00

CPC classification number: H04R19/005 ,  B81B2201/0257 ,  B81C1/00246 ,  B81C2203/0728 ,  H04R1/04 ,  H04R19/04 ,  H04R31/006

Abstract: A method of forming a microphone having a variable capacitance first deposits high temperature deposition material on a die. The high temperature material ultimately forms structure that contributes to the variable capacitance. The method then forms circuitry on the die after depositing the deposition material. The circuitry is configured to detect the variable capacitance.

Abstract translation: 形成具有可变电容的麦克风的方法首先将高温沉积材料沉积在模具上。 高温材料最终形成有助于可变电容的结构。 该方法然后在沉积沉积材料之后在管芯上形成电路。 电路被配置为检测可变电容。

公开(公告)号：US20090029501A1

公开(公告)日：2009-01-29

申请号：US12244840

申请日：2008-10-03

Applicant: Jason W. Weigold

Inventor： Jason W. Weigold

IPC: H01L21/00

CPC classification number: B81C1/00944 ,  B81B2201/0257 ,  H04R19/005

Abstract: A method of forming a microphone forms a backplate, and a flexible diaphragm on at least a portion of a wet etch removable sacrificial layer. The method adds a wet etch resistant material, where a portion of the wet etch resistant material is positioned between the diaphragm and the backplate to support the diaphragm. Some of the wet etch resistant material is not positioned between the diaphragm and backplate. The method then removes the sacrificial material before removing any of the wet etch resistant material added during the prior noted act of adding. The wet etch resistant material then is removed substantially in its entirety after removing at least part of the sacrificial material.

Abstract translation: 形成麦克风的方法在湿蚀刻可移除牺牲层的至少一部分上形成背板和柔性隔膜。 该方法添加了耐湿蚀刻材料，其中一部分耐湿蚀刻材料位于隔膜和背板之间以支撑隔膜。 一些耐湿蚀刻材料不位于隔膜和背板之间。 然后，该方法在去除在先前提及的添加作用之前添加的任何耐湿蚀蚀材料之前，去除牺牲材料。 然后在去除至少部分牺牲材料之后基本上全部除去耐湿蚀刻材料。

公开(公告)号：US08358793B2

公开(公告)日：2013-01-22

申请号：US13047220

申请日：2011-03-14

Applicant: Jason W. Weigold

Inventor： Jason W. Weigold

IPC: H04R25/00

CPC classification number: H04R31/003 ,  G01L9/0042 ,  H04R7/14 ,  H04R19/005 ,  H04R19/04 ,  H04R27/00 ,  H04R31/00 ,  H04R2499/11 ,  Y10T29/43 ,  Y10T29/49005

Abstract: A microphone is formed to have a diaphragm that is configured to improve signal to noise ratio. To that end, the microphone has a backplate having a hole therethrough, and a diaphragm movably coupled with the backplate. The diaphragm has a bottom surface (facing the backplate) with a convex portion aligned with the hole in the backplate.

Abstract translation: 麦克风被形成为具有被配置为提高信噪比的隔膜。 为此，麦克风具有穿过其中的孔的背板，以及与该背板可移动地联接的隔膜。 隔膜具有与背板中的孔对准的凸部的底面（面对背板）。

公开(公告)号：US08309386B2

公开(公告)日：2012-11-13

申请号：US12244840

申请日：2008-10-03

Applicant: Jason W. Weigold

Inventor： Jason W. Weigold

IPC: H01L21/00

CPC classification number: B81C1/00944 ,  B81B2201/0257 ,  H04R19/005

Abstract: A method of forming a microphone forms a backplate, and a flexible diaphragm on at least a portion of a wet etch removable sacrificial layer. The method adds a wet etch resistant material, where a portion of the wet etch resistant material is positioned between the diaphragm and the backplate to support the diaphragm. Some of the wet etch resistant material is not positioned between the diaphragm and backplate. The method then removes the sacrificial material before removing any of the wet etch resistant material added during the prior noted act of adding. The wet etch resistant material then is removed substantially in its entirety after removing at least part of the sacrificial material.

Abstract translation: 形成麦克风的方法在湿蚀刻可移除牺牲层的至少一部分上形成背板和柔性隔膜。 该方法添加了耐湿蚀刻材料，其中一部分耐湿蚀刻材料位于隔膜和背板之间以支撑隔膜。 一些耐湿蚀刻材料不位于隔膜和背板之间。 然后，该方法在去除在先前提及的添加作用之前添加的任何耐湿蚀蚀材料之前，去除牺牲材料。 然后在去除至少部分牺牲材料之后基本上全部除去耐湿蚀刻材料。