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    CMP SLURRY COMPOSITION FOR TUNGSTEN
    2.
    发明申请
    CMP SLURRY COMPOSITION FOR TUNGSTEN 有权
    CMP浆料组合物

    公开(公告)号：US20130214199A1

    公开(公告)日：2013-08-22

    申请号：US13643375

    申请日：2012-07-06

    申请人： Jea-Gun Park ,  Jin-Hyung Park ,  Jae-Hyung Lim ,  Jong-Young Cho ,  Ho Choi ,  Hee-Sub Hwang

    发明人： Jea-Gun Park ,  Jin-Hyung Park ,  Jae-Hyung Lim ,  Jong-Young Cho ,  Ho Choi ,  Hee-Sub Hwang

    IPC分类号： C23F1/30

    CPC分类号： C23F1/30 ,  C09G1/02 ,  C23F3/06

    摘要： The present invention relates to a CMP slurry composition for polishing tungsten comprising a abrasive and a polishing chemical, wherein the abrasive comprises colloidal silica dispersed in ultra-pure water, and the polishing chemical comprises hydrogen peroxide, ammonium persulfate and iron nitrate. The slurry composition is not discolored and has good etching selectivity, so as to be applied to a CMP process.

    摘要翻译： 本发明涉及一种用于抛光钨的CMP浆料组合物，其包括研磨剂和抛光化学品，其中磨料包含分散在超纯水中的胶体二氧化硅，抛光化学品包括过氧化氢，过硫酸铵和硝酸铁。 浆料组合物不变色并且具有良好的蚀刻选择性，从而适用于CMP工艺。

    MULTI-SELECTIVE POLISHING SLURRY COMPOSITION AND A SEMICONDUCTOR ELEMENT PRODUCTION METHOD USING THE SAME
    3.
    发明申请
    MULTI-SELECTIVE POLISHING SLURRY COMPOSITION AND A SEMICONDUCTOR ELEMENT PRODUCTION METHOD USING THE SAME 审中-公开
    多选择性抛光浆料组合物和使用其的半导体元件生产方法

    公开(公告)号：US20120190201A1

    公开(公告)日：2012-07-26

    申请号：US13386494

    申请日：2010-07-09

    申请人： Jea-Gun Park ,  Un-Gyu Paik ,  Jin-Hyung Park ,  Hao Cui ,  Jong-Young Cho ,  Hee-Sub Hwang ,  Jae-Hyung Lim ,  Ye-Hwan Kim

    发明人： Jea-Gun Park ,  Un-Gyu Paik ,  Jin-Hyung Park ,  Hao Cui ,  Jong-Young Cho ,  Hee-Sub Hwang ,  Jae-Hyung Lim ,  Ye-Hwan Kim

    IPC分类号： H01L21/306 ,  C09K13/00

    CPC分类号： H01L21/31056 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053 ,  H01L21/3212

    摘要： Provided are a multi-selective polishing slurry composition and a semiconductor element production method using the same. A silicon film provided with element patterns is formed on the uppermost part of a substrate having a first region and a second region. The element pattern density on the first region is higher than the element pattern density on the second region. Formed in sequence on top of the element patterns are a first silicon oxide film, a silicon nitride film and a second silicon oxide film. The substrate is subjected to chemical-mechanical polishing until the silicon film is exposed, by using a polishing slurry composition containing a polishing agent, a silicon nitride film passivation agent and a silicon film passivation agent. The polishing slurry composition may be a mixture of 100 parts by weight of a polishing agent suspension, containing a polishing agent, and from 40 to 120 parts by weight of an additive solution, and the additive solution can contain 100 parts by weight of a solvent, from 0.01 to 5 parts by weight of a silicon nitride film passivation agent and from 0.01 to 5 parts by weight of a silicon film passivation agent.

    摘要翻译： 提供多选择性研磨浆料组合物和使用其的半导体元件制造方法。 具有元件图案的硅膜形成在具有第一区域和第二区域的基板的最上部。 第一区域上的元件图案密度高于第二区域上的元件图案密度。 在元件图案顶部依次形成第一氧化硅膜，氮化硅膜和第二氧化硅膜。 通过使用包含抛光剂，氮化硅膜钝化剂和硅膜钝化剂的抛光浆料组合物，对基材进行化学机械抛光，直到暴露硅膜。 抛光浆料组合物可以是100重量份的含有抛光剂的抛光剂悬浮液和40至120重量份的添加剂溶液的混合物，并且添加剂溶液可以包含100重量份的溶剂 ，0.01〜5重量份的氮化硅膜钝化剂和0.01〜5重量份的硅膜钝化剂。

    Method of fabricating liquid crystal display device
    4.
    发明授权
    Method of fabricating liquid crystal display device 有权
    制造液晶显示装置的方法

    公开(公告)号：US08399182B2

    公开(公告)日：2013-03-19

    申请号：US12941835

    申请日：2010-11-08

    申请人： Jae-Hyung Lim ,  Dong-Guk Kim ,  Jong-Hwae Lee

    发明人： Jae-Hyung Lim ,  Dong-Guk Kim ,  Jong-Hwae Lee

    IPC分类号： G03F7/20

    CPC分类号： H01L27/1288 ,  G02F1/133555 ,  G02F1/134363 ,  G02F1/1362 ,  G02F2201/50 ,  H01L27/1214

    摘要： A method of fabricating a transflective type liquid crystal display device includes: forming gate and data lines with a gate insulating layer therebetween on a substrate and crossing each other to define a pixel region that includes a switching region, a reflective region, and a transmissive region; forming a thin film transistor corresponding to the switching region and connected to the gate and data lines; forming a first passivation layer on the thin film transistor; forming a reflective plate on the first passivation layer in the reflective region; forming a second passivation layer on the reflective plate; forming a pixel electrode on the second passivation layer and connected to a drain electrode of the thin film transistor; forming a third passivation layer on the pixel electrode.

    摘要翻译： 一种半透射型液晶显示装置的制造方法，其特征在于，在基板上形成栅极绝缘层和数据线，并且彼此交叉以形成包括开关区域，反射区域和透射区域的像素区域 ; 形成对应于开关区域并连接到栅极和数据线的薄膜晶体管; 在所述薄膜晶体管上形成第一钝化层; 在所述反射区域中的所述第一钝化层上形成反射板; 在所述反射板上形成第二钝化层; 在所述第二钝化层上形成像素电极，并连接到所述薄膜晶体管的漏电极; 在像素电极上形成第三钝化层。