摘要:
The present invention relates to a CMP slurry composition for polishing tungsten comprising a abrasive and a polishing chemical, wherein the abrasive comprises colloidal silica dispersed in ultra-pure water, and the polishing chemical comprises hydrogen peroxide, ammonium persulfate and iron nitrate. The slurry composition is not discolored and has good etching selectivity, so as to be applied to a CMP process.
摘要:
The present invention relates to a CMP slurry composition for polishing tungsten comprising a abrasive and a polishing chemical, wherein the abrasive comprises colloidal silica dispersed in ultra-pure water, and the polishing chemical comprises hydrogen peroxide, ammonium persulfate and iron nitrate. The slurry composition is not discolored and has good etching selectivity, so as to be applied to a CMP process.
摘要:
Provided are a multi-selective polishing slurry composition and a semiconductor element production method using the same. A silicon film provided with element patterns is formed on the uppermost part of a substrate having a first region and a second region. The element pattern density on the first region is higher than the element pattern density on the second region. Formed in sequence on top of the element patterns are a first silicon oxide film, a silicon nitride film and a second silicon oxide film. The substrate is subjected to chemical-mechanical polishing until the silicon film is exposed, by using a polishing slurry composition containing a polishing agent, a silicon nitride film passivation agent and a silicon film passivation agent. The polishing slurry composition may be a mixture of 100 parts by weight of a polishing agent suspension, containing a polishing agent, and from 40 to 120 parts by weight of an additive solution, and the additive solution can contain 100 parts by weight of a solvent, from 0.01 to 5 parts by weight of a silicon nitride film passivation agent and from 0.01 to 5 parts by weight of a silicon film passivation agent.
摘要:
There are provided a gamma ray detecting apparatus, including: a secondary electron emitter causing a Compton scattering reaction with an incident gamma ray to emit secondary electrons in a progress direction of the gamma ray; a first radiation detector provided to be opposed to the secondary electron emitter with respect to an emission progress direction of the secondary electrons and detecting the position and transfer energy of the secondary electron; a second radiation detector provided to be opposed to the first radiation detector with respect to the emission progress direction of the secondary electron and detecting the position and the transfer energy of the secondary electron passing through the first radiation detector; a third radiation detector provided to be opposed to the second radiation detector with respect to the emission progress direction of the secondary electron and detecting residual energy of the secondary electron by absorbing the secondary electron passing through the second radiation detector; and a data processor having a coincidence circuit judging whether the secondary electrons simultaneously react in the first to third radiation detectors, and the data processor back traces trajectories of the secondary electrons detected by the first and second radiation detectors to detect the position of a ray source of the gamma ray, and a gamma ray detecting method.
摘要:
A reference pattern for creating a defect recognition level comprises a blank region formed on a transparent substrate and a grating region formed adjacent to the blank region, wherein the grating region includes a plurality of parallel trench lines.
摘要:
A chromeless photomask includes a main pattern portion and a complementary pattern portion formed in the surface of the transparent mask substrate adjacent to an outer peripheral edge of the main pattern portion. The main and complementary pattern portions are each formed by recessing a surface of a transparent mask substrate to produce respective protrusions and recesses that induce a phase difference of 180 degrees in light rays passing therethrough. The complementary pattern portion is designed to produce interference that prevents distortion in the photoresist pattern formed at a region by and corresponding to the edge of the main pattern portion of the photomask. Accordingly, the present invention provides for a relatively large secondary mask alignment margin.
摘要:
A reference pattern for creating a defect recognition level comprises a blank region formed on a transparent substrate and a grating region formed adjacent to the blank region, wherein the grating region includes a plurality of parallel trench lines.
摘要:
There are provided a gamma ray detecting apparatus, including: a secondary electron emitter causing a Compton scattering reaction with an incident gamma ray to emit secondary electrons in a progress direction of the gamma ray; a first radiation detector provided to be opposed to the secondary electron emitter with respect to an emission progress direction of the secondary electrons and detecting the position and transfer energy of the secondary electron; a second radiation detector provided to be opposed to the first radiation detector with respect to the emission progress direction of the secondary electron and detecting the position and the transfer energy of the secondary electron passing through the first radiation detector; a third radiation detector provided to be opposed to the second radiation detector with respect to the emission progress direction of the secondary electron and detecting residual energy of the secondary electron by absorbing the secondary electron passing through the second radiation detector; and a data processor having a coincidence circuit judging whether the secondary electrons simultaneously react in the first to third radiation detectors, and the data processor back traces trajectories of the secondary electrons detected by the first and second radiation detectors to detect the position of a ray source of the gamma ray, and a gamma ray detecting method.
摘要:
A three-dimensional measurement system using an IGPS includes a rescale bar having linear scales thereon, a linear encoder for measuring an absolute length within which the linear encoder moves on the rescale bar, a plurality of optical transmitters that radiates pan beams, and a vector bar having one end attached to the linear encoder, and having a receiver to detect the pan beams radiated from the optical transmitters, the vector bar acquiring coordinates of two points where the vector bar moves by using the receiver, and measuring a relative length from the coordinates. A ratio between the absolute length and the relative length is applied in rescaling an actual distance between two positions to be measured.
摘要:
A method, apparatus, and system track an object in an image or a video. Pose information is extracted using a relation of at least one feature point extracted in a first Region of Interest (RoI). A pose is estimated using the pose information. A secpmd RoI is set using the pose. And the second RoI is estimated using a filtering scheme.