CMP SLURRY COMPOSITION FOR TUNGSTEN
    2.
    发明申请
    CMP SLURRY COMPOSITION FOR TUNGSTEN 有权
    CMP浆料组合物

    公开(公告)号:US20130214199A1

    公开(公告)日:2013-08-22

    申请号:US13643375

    申请日:2012-07-06

    IPC分类号: C23F1/30

    CPC分类号: C23F1/30 C09G1/02 C23F3/06

    摘要: The present invention relates to a CMP slurry composition for polishing tungsten comprising a abrasive and a polishing chemical, wherein the abrasive comprises colloidal silica dispersed in ultra-pure water, and the polishing chemical comprises hydrogen peroxide, ammonium persulfate and iron nitrate. The slurry composition is not discolored and has good etching selectivity, so as to be applied to a CMP process.

    摘要翻译: 本发明涉及一种用于抛光钨的CMP浆料组合物,其包括研磨剂和抛光化学品,其中磨料包含分散在超纯水中的胶体二氧化硅,抛光化学品包括过氧化氢,过硫酸铵和硝酸铁。 浆料组合物不变色并且具有良好的蚀刻选择性,从而适用于CMP工艺。

    MULTI-SELECTIVE POLISHING SLURRY COMPOSITION AND A SEMICONDUCTOR ELEMENT PRODUCTION METHOD USING THE SAME
    3.
    发明申请
    MULTI-SELECTIVE POLISHING SLURRY COMPOSITION AND A SEMICONDUCTOR ELEMENT PRODUCTION METHOD USING THE SAME 审中-公开
    多选择性抛光浆料组合物和使用其的半导体元件生产方法

    公开(公告)号:US20120190201A1

    公开(公告)日:2012-07-26

    申请号:US13386494

    申请日:2010-07-09

    IPC分类号: H01L21/306 C09K13/00

    摘要: Provided are a multi-selective polishing slurry composition and a semiconductor element production method using the same. A silicon film provided with element patterns is formed on the uppermost part of a substrate having a first region and a second region. The element pattern density on the first region is higher than the element pattern density on the second region. Formed in sequence on top of the element patterns are a first silicon oxide film, a silicon nitride film and a second silicon oxide film. The substrate is subjected to chemical-mechanical polishing until the silicon film is exposed, by using a polishing slurry composition containing a polishing agent, a silicon nitride film passivation agent and a silicon film passivation agent. The polishing slurry composition may be a mixture of 100 parts by weight of a polishing agent suspension, containing a polishing agent, and from 40 to 120 parts by weight of an additive solution, and the additive solution can contain 100 parts by weight of a solvent, from 0.01 to 5 parts by weight of a silicon nitride film passivation agent and from 0.01 to 5 parts by weight of a silicon film passivation agent.

    摘要翻译: 提供多选择性研磨浆料组合物和使用其的半导体元件制造方法。 具有元件图案的硅膜形成在具有第一区域和第二区域的基板的最上部。 第一区域上的元件图案密度高于第二区域上的元件图案密度。 在元件图案顶部依次形成第一氧化硅膜,氮化硅膜和第二氧化硅膜。 通过使用包含抛光剂,氮化硅膜钝化剂和硅膜钝化剂的抛光浆料组合物,对基材进行化学机械抛光,直到暴露硅膜。 抛光浆料组合物可以是100重量份的含有抛光剂的抛光剂悬浮液和40至120重量份的添加剂溶液的混合物,并且添加剂溶液可以包含100重量份的溶剂 ,0.01〜5重量份的氮化硅膜钝化剂和0.01〜5重量份的硅膜钝化剂。

    Gamma ray detecting apparatus and method for detecting gamma ray using the same
    4.
    发明授权
    Gamma ray detecting apparatus and method for detecting gamma ray using the same 有权
    γ射线检测装置及使用其的γ射线检测方法

    公开(公告)号:US08993975B2

    公开(公告)日:2015-03-31

    申请号:US14111103

    申请日:2012-02-02

    摘要: There are provided a gamma ray detecting apparatus, including: a secondary electron emitter causing a Compton scattering reaction with an incident gamma ray to emit secondary electrons in a progress direction of the gamma ray; a first radiation detector provided to be opposed to the secondary electron emitter with respect to an emission progress direction of the secondary electrons and detecting the position and transfer energy of the secondary electron; a second radiation detector provided to be opposed to the first radiation detector with respect to the emission progress direction of the secondary electron and detecting the position and the transfer energy of the secondary electron passing through the first radiation detector; a third radiation detector provided to be opposed to the second radiation detector with respect to the emission progress direction of the secondary electron and detecting residual energy of the secondary electron by absorbing the secondary electron passing through the second radiation detector; and a data processor having a coincidence circuit judging whether the secondary electrons simultaneously react in the first to third radiation detectors, and the data processor back traces trajectories of the secondary electrons detected by the first and second radiation detectors to detect the position of a ray source of the gamma ray, and a gamma ray detecting method.

    摘要翻译: 提供了一种伽马射线检测装置,包括:二次电子发射器,其使入射伽马射线的康普顿散射反应在伽马射线的进行方向上发射二次电子; 第一辐射检测器,被设置为相对于二次电子的发射进行方向与二次电子发射体相对,并且检测二次电子的位置和转移能量; 第二辐射检测器,被设置为相对于所述第二辐射检测器与所述第二辐射检测器的发射进行方向相对,并且检测通过所述第一辐射检测器的二次电子的位置和转移能; 第三辐射检测器,被设置为相对于所述二次电子的发射进行方向与所述第二辐射检测器相对,并且通过吸收通过所述第二辐射检测器的二次电子来检测所述二次电子的剩余能量; 以及数据处理器,其具有判断二次电子是否在第一至第三辐射检测器中同时反应的符合电路,并且数据处理器返回跟踪由第一和第二辐射检测器检测到的二次电子的轨迹,以检测射线源的位置 的γ射线和伽马射线检测方法。

    Chromeless photomask and exposure apparatus including the chromeless photomask
    6.
    发明授权
    Chromeless photomask and exposure apparatus including the chromeless photomask 失效
    无色光掩模和包括无色光掩模的曝光设备

    公开(公告)号:US07084950B2

    公开(公告)日:2006-08-01

    申请号:US10407462

    申请日:2003-04-07

    IPC分类号: G03B27/32 G03B27/42 G03F1/00

    CPC分类号: G03F1/34

    摘要: A chromeless photomask includes a main pattern portion and a complementary pattern portion formed in the surface of the transparent mask substrate adjacent to an outer peripheral edge of the main pattern portion. The main and complementary pattern portions are each formed by recessing a surface of a transparent mask substrate to produce respective protrusions and recesses that induce a phase difference of 180 degrees in light rays passing therethrough. The complementary pattern portion is designed to produce interference that prevents distortion in the photoresist pattern formed at a region by and corresponding to the edge of the main pattern portion of the photomask. Accordingly, the present invention provides for a relatively large secondary mask alignment margin.

    摘要翻译: 无铬光掩模包括形成在与图案部分的外周边缘相邻的透明掩模基板的表面中的主图案部分和互补图案部分。 主要和互补图案部分各自通过使透明掩模基板的表面凹陷而形成相应的突出和凹陷,其在通过其的光线中引起180度的相位差。 互补图案部分被设计成产生干涉,防止在光掩模的主图案部分的边缘处形成的区域处形成的光致抗蚀剂图案的失真。 因此,本发明提供了相对较大的二次掩模对准边缘。

    GAMMA RAY DETECTING APPARATUS AND METHOD FOR DETECTING GAMMA RAY USING THE SAME
    8.
    发明申请
    GAMMA RAY DETECTING APPARATUS AND METHOD FOR DETECTING GAMMA RAY USING THE SAME 有权
    伽马射线检测装置和使用其检测伽玛射线的方法

    公开(公告)号:US20140021362A1

    公开(公告)日:2014-01-23

    申请号:US14111103

    申请日:2012-02-02

    IPC分类号: G01T1/20

    摘要: There are provided a gamma ray detecting apparatus, including: a secondary electron emitter causing a Compton scattering reaction with an incident gamma ray to emit secondary electrons in a progress direction of the gamma ray; a first radiation detector provided to be opposed to the secondary electron emitter with respect to an emission progress direction of the secondary electrons and detecting the position and transfer energy of the secondary electron; a second radiation detector provided to be opposed to the first radiation detector with respect to the emission progress direction of the secondary electron and detecting the position and the transfer energy of the secondary electron passing through the first radiation detector; a third radiation detector provided to be opposed to the second radiation detector with respect to the emission progress direction of the secondary electron and detecting residual energy of the secondary electron by absorbing the secondary electron passing through the second radiation detector; and a data processor having a coincidence circuit judging whether the secondary electrons simultaneously react in the first to third radiation detectors, and the data processor back traces trajectories of the secondary electrons detected by the first and second radiation detectors to detect the position of a ray source of the gamma ray, and a gamma ray detecting method.

    摘要翻译: 提供了一种伽马射线检测装置,包括:二次电子发射器,其使入射伽马射线的康普顿散射反应在伽马射线的进行方向上发射二次电子; 第一辐射检测器,被设置为相对于二次电子的发射进行方向与二次电子发射体相对,并且检测二次电子的位置和转移能量; 第二辐射检测器,被设置为相对于所述第二辐射检测器与所述第二辐射检测器的发射进行方向相对,并且检测通过所述第一辐射检测器的二次电子的位置和转移能; 第三辐射检测器,被设置为相对于所述二次电子的发射进行方向与所述第二辐射检测器相对,并且通过吸收通过所述第二辐射检测器的二次电子来检测所述二次电子的剩余能量; 以及数据处理器,其具有判断二次电子是否在第一至第三辐射检测器中同时反应的符合电路,并且数据处理器返回跟踪由第一和第二辐射检测器检测到的二次电子的轨迹,以检测射线源的位置 的γ射线和伽马射线检测方法。

    THREE-DIMENSIONAL MEASUREMENT SYSTEM AND RESCALING METHOD USING INDOOR GPS
    9.
    发明申请
    THREE-DIMENSIONAL MEASUREMENT SYSTEM AND RESCALING METHOD USING INDOOR GPS 有权
    三维测量系统和使用室内GPS的重建方法

    公开(公告)号:US20100020305A1

    公开(公告)日:2010-01-28

    申请号:US12442669

    申请日:2007-09-21

    IPC分类号: G01C3/00

    CPC分类号: G01C3/00 G01B11/14 G01S1/70

    摘要: A three-dimensional measurement system using an IGPS includes a rescale bar having linear scales thereon, a linear encoder for measuring an absolute length within which the linear encoder moves on the rescale bar, a plurality of optical transmitters that radiates pan beams, and a vector bar having one end attached to the linear encoder, and having a receiver to detect the pan beams radiated from the optical transmitters, the vector bar acquiring coordinates of two points where the vector bar moves by using the receiver, and measuring a relative length from the coordinates. A ratio between the absolute length and the relative length is applied in rescaling an actual distance between two positions to be measured.

    摘要翻译: 使用IGPS的三维测量系统包括其上具有线性刻度的重定标杆,用于测量线性编码器在重定标杆上移动的绝对长度的线性编码器,辐射泛光束的多个光发射器,以及矢量 杆,其一端连接到线性编码器,并具有用于检测从光学发射器辐射的摇摄光束的接收器,矢量条获取通过使用接收器移动矢量条的两个点的坐标,以及测量从 坐标 绝对长度和相对长度之间的比率应用于两个测量位置之间的实际距离的重新缩放。