公开(公告)号：US6015503A

公开(公告)日：2000-01-18

申请号：US860071

申请日：1997-09-02

申请人： Jeffery W. Butterbaugh ,  David C. Gray ,  Robert T. Fayfield ,  Kevin Siefering ,  John Heitzinger ,  Fred C. Hiatt

发明人： Jeffery W. Butterbaugh ,  David C. Gray ,  Robert T. Fayfield ,  Kevin Siefering ,  John Heitzinger ,  Fred C. Hiatt

IPC分类号： B08B7/00 ,  H01L21/00 ,  H01L21/306 ,  H01L21/311 ,  C23F1/12

CPC分类号： H01L21/02046 ,  B08B7/0057 ,  H01L21/31116 ,  H01L21/67017 ,  H01L21/67115 ,  Y10S438/935

摘要： Apparatus and process for conditioning a generally planar substrate, contained in a chamber isolatable from the ambient environment and fed with a conditioning gas which includes a reactive gas. The apparatus includes a support for supporting the substrate in the chamber, the substrate being in a lower pressure reaction region of the chamber. A gas inlet is provided for feeding conditioning gas into a gas inlet region of the chamber which is at a higher pressure than the lower pressure reaction region so that the pressure differential causes the conditioning gas to flow toward the surface of the substrate wherein the conditioning gas component will chemically react with and condition the substrate surface, both said higher and lower pressure regions operating in a viscous flow regime. The substrate is supported such that a pressure bias is created across the surface of the substrate so that the gas, after it has chemically reacted with the substrate surface, flows outward from where it has reacted, off the substrate toward the periphery of the chamber and out a peripheral or central underside exhaust outlet. Gas feed may be provided to one or both sides of the substrate and light activation of the substrate or conditioning gas may be provided on one or both sides.

摘要翻译： PCT No.PCT / US95 / 16649 Sec。 371日期：1997年9月2日 102（e）1997年9月2日PCT 1995年12月21日PCT PCT。 公开号WO96 / 198252 日期1996年6月27日用于调节大体上平面的基板的装置和工艺，该基板包含在可与周围环境隔离并且供给包括反应气体的调节气体的室中。 该装置包括用于在腔室中支撑衬底的支撑件，衬底处于室的较低压力反应区域中。 提供了一个气体入口，用于将调节气体输送到腔室的气体入口区域中，该气体入口区域处于比低压反应区域更高的压力，使得压力差导致调节气体朝向衬底的表面流动，其中调节气体 所述组分将在粘性流动状态下操作的所述较高压力区域和较低压力区域将与底物表面发生化学反应和调节。 支撑衬底使得跨越衬底的表面产生压力偏压，使得气体在其与衬底表面发生化学反应之后从其已经反应的气体向外流出，离开衬底朝向室的周边，并且 外围或中央下侧排气口。 可以将气体进料提供到基底的一侧或两侧，并且可以在一侧或两侧设置基底或调理气体的光激活。

公开(公告)号：US07025831B1

公开(公告)日：2006-04-11

申请号：US09443663

申请日：1999-11-19

申请人： Jeffery W. Butterbaugh ,  David C. Gray ,  Robert T. Fayfield ,  Kevin Siefering ,  John Heitzinger ,  Fred C. Hiatt

发明人： Jeffery W. Butterbaugh ,  David C. Gray ,  Robert T. Fayfield ,  Kevin Siefering ,  John Heitzinger ,  Fred C. Hiatt

IPC分类号： C23C16/48 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/31116 ,  C03C15/00 ,  C03C23/0075 ,  C23F1/00 ,  C23F1/12 ,  C23G5/00 ,  H01L21/02046 ,  H01L21/67115

摘要： Apparatus and process for conditioning a generally planar substrate, contained in a chamber isolatable from the ambient environment and fed with a conditioning gas which includes reactive gas. The apparatus includes a support for supporting the substrate in the chamber, the substrate being in a lower pressure reaction region of the chamber. A gas inlet is provided for feeding conditioning gas into a gas inlet region of the chamber which is at a higher pressure than the lower pressure reaction region so that the pressure differential causes the conditioning gas to flow toward the surface of the substrate wherein the conditioning gas component will chemically react with and condition the substrate surface, both said higher and lower pressure regions operating in a viscous flow regime. The substrate is supported such that a pressure bias is created across the surface of this substrate so that the gas, after it has chemically reacted with the substrate surface, flows outward from where it has reacted, off the substrate toward the periphery of the chamber and out a peripheral or central underside exhaust outlet. Gas feed may be provided to one or both sides the substrate and light activation of the substrate or conditioning gas may be provided on one or both sides.

摘要翻译： 用于调理大体上平面的基底的装置和方法，包含在可与周围环境隔离的室中并供给包括反应气体的调节气体。 该装置包括用于在腔室中支撑衬底的支撑件，衬底处于室的较低压力反应区域中。 提供了一个气体入口，用于将调节气体输送到腔室的气体入口区域中，该气体入口区域处于比低压反应区域更高的压力，使得压力差导致调节气体朝向衬底的表面流动，其中调节气体 所述组分将在粘性流动状态下操作的所述较高压力区域和较低压力区域将与底物表面发生化学反应和调节。 支撑衬底，使得在该衬底的表面上形成压力偏压，使得气体在其与衬底表面发生化学反应之后从其已经反应的位置向外流动，离开衬底朝向腔室的周边，并且 外围或中央下侧排气口。 可以将气体进料提供给基材的一侧或两侧，并且可以在一侧或两侧设置基材或调理气体的光活化。

公开(公告)号：US06124211A

公开(公告)日：2000-09-26

申请号：US541634

申请日：1995-10-10

申请人： Jeffery W. Butterbaugh ,  David C. Gray ,  Robert T. Fayfield

发明人： Jeffery W. Butterbaugh ,  David C. Gray ,  Robert T. Fayfield

IPC分类号： C30B33/12 ,  B08B7/00 ,  C03C15/00 ,  C03C23/00 ,  C23C16/02 ,  C23F1/12 ,  C23F4/00 ,  C23G5/00 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/32 ,  H01L21/3213 ,  H01L21/00

CPC分类号： H01L21/02046 ,  B08B7/0057 ,  C03C15/00 ,  C03C23/002 ,  C23C16/0236 ,  H01L21/02063 ,  H01L21/31116 ,  H01L21/32

摘要： A method for removing native oxides and other contaminants from a wafer surface while minimizing the loss of a desired film on the wafer surface. The method is carried out in a hermetically sealed reactor. A fluorine-containing gas or gas mixture is passed over the wafer during simultaneous exposure to ultraviolet radiation in the absence of added water, hydrogen, hydrogen fluoride or hydrogen containing organics, thereby avoiding the production of water as a reaction product. The addition of ultraviolet radiation and the elimination of water, hydrogen, hydrogen fluoride and hydrogen containing organics provides for the nearly equivalent (non-selective) removal of various forms of oxide and also provides for improved process control.

摘要翻译： 一种从晶片表面去除天然氧化物和其它污染物同时最小化晶片表面上期望的膜的损耗的方法。 该方法在密封的反应器中进行。 在不加入水，氢气，氟化氢或含氢的有机物的同时暴露于紫外线辐射下，含氟气体或气体混合物通过晶片，从而避免产生作为反应产物的水。 添加紫外线辐射和消除​​水，氢，氟化氢和含氢有机物提供了几乎等同（非选择性）去除各种形式的氧化物，并且还提供改进的过程控制。

公开(公告)号：US5716495A

公开(公告)日：1998-02-10

申请号：US621538

申请日：1996-03-25

申请人： Jeffery W. Butterbaugh ,  David C. Gray

发明人： Jeffery W. Butterbaugh ,  David C. Gray

IPC分类号： C30B33/12 ,  B08B7/00 ,  C03C15/00 ,  C03C23/00 ,  C23C16/02 ,  C23F1/12 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/32 ,  B44C1/22 ,  C03C25/06

CPC分类号： H01L21/02046 ,  B08B7/0057 ,  C03C15/00 ,  C03C23/002 ,  C23C16/0236 ,  H01L21/02063 ,  H01L21/31116 ,  H01L21/32

摘要： A method for removing native oxides and other contaminants from a wafer surface while minimizing the loss of a desired film on the wafer surface. The method is carried out in a hermetically sealed reactor. A fluorine-containing gas or gas mixture is passed over the wafer during simultaneous exposure to ultraviolet radiation in the absence of added water, hydrogen, hydrogen fluoride or hydrogen containing organics, thereby avoiding the production of water as a reaction product. The addition of ultraviolet radiation and the elimination of water, hydrogen, hydrogen fluoride and hydrogen containing organics provides for the nearly equivalent (non-selective) removal of various forms of oxide and also provides for improved process control.

公开(公告)号：US5534107A

公开(公告)日：1996-07-09

申请号：US292359

申请日：1994-08-18

申请人： David C. Gray ,  Jeffery W. Butterbaugh

发明人： David C. Gray ,  Jeffery W. Butterbaugh

IPC分类号： C30B33/12 ,  B08B7/00 ,  C03C15/00 ,  C03C23/00 ,  C23C16/02 ,  C23F1/12 ,  C23F4/00 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/32 ,  H01L21/00 ,  B44C1/22

CPC分类号： H01L21/32 ,  B08B7/0057 ,  C03C15/00 ,  C03C23/002 ,  C23C16/0236 ,  H01L21/02046 ,  H01L21/02063 ,  H01L21/31116

摘要： A UV light-enhanced process for rapidly stripping films of silicon nitride in a dry reaction environment, which may be free of plasma or plasma effluents. This process is carried out in a sealed reactor which allows simultaneous exposure of a substrate wafer to a polyatomic fluorine containing gas which can be photodissociated by UV radiation to produce atomic fluorine and to UV radiation. Silicon nitride stripping rates in excess of 500 .ANG./min are readily obtainable with UV-stimulated fluorine-based processes, while maintaining the bulk wafer temperature below 300.degree. C. Selectivities for silicon nitride-to-silicon oxide etching of greater than 30 can be achieved for the stripping of silicon nitride LOCOS mask layers in the presence of field oxide and pad oxide layers when a chlorine or bromine containing gas which can be photodissociated by UV radiation to produce atomic chlorine or bromine is used in mixture with the fluorine containing gas. Selectivity and etch rate are controlled through UV lamp exposure, substrate temperature, and additions of nitrogen diluent, and photodissociable chlorine or bromine containing gases. The process addresses many of the limitations of plasma-downstream etch tools for dry silicon nitride stripping, including complete elimination of charged particles and sputtered contaminants associated with plasma effluents.

摘要翻译： 用于在干燥反应环境中快速剥离氮化硅膜的UV光增强方法，其可以不含等离子体或等离子体流出物。 该过程在密封的反应器中进行，其允许将衬底晶片同时暴露于可以通过UV辐射光分解以产生原子氟和UV辐射的多原子含氟气体。 超过500安培/分钟的氮化硅剥离速率可以通过紫外线刺激的氟基方法获得，同时保持体晶片温度低于300℃。大于30的氮化硅 - 氧化硅蚀刻的选择性可以是 在含氟气体的混合物中使用含有氯或溴的气体时，通过紫外线辐照而产生原子氯或溴，可以在存在场氧化物和氧化层的情况下，剥离氮化硅LOCOS掩模层。 选择性和蚀刻速率通过紫外线灯曝光，底物温度和氮稀释剂以及光分解的含氯或溴的气体进行控制。 该过程解决了用于干式氮化硅剥离的等离子体 - 下游蚀刻工具的许多限制，包括完全消除带电粒子和与等离子体流出物相关的溅射污染物。

公开(公告)号：US5782986A

公开(公告)日：1998-07-21

申请号：US584179

申请日：1996-01-11

申请人： Jeffery W. Butterbaugh ,  David C. Gray

发明人： Jeffery W. Butterbaugh ,  David C. Gray

IPC分类号： C23F1/12 ,  H01L21/302 ,  H01L21/306 ,  H01L21/308 ,  B08B7/00

CPC分类号： H01L21/02046 ,  C23F1/12

摘要： UV irradiation enhances oxidation of metal and/or formation of sublimable ligand compounds using beta-diketone or beta-ketoimine ligand forming compounds. A UV/halogen gas or UV/ozone treatment can be used to efficiently oxidize the metallic material to a suitable form for reaction with the ligand forming compound and UV irradiation can be used during exposure to the ligand forming compound to enhance the formation of sublimable ligand compounds. Oxidization and ligand compound formation can be run sequentially or simultaneously. The process can be used for bulk metals removal, metal film patterning or trace metals removal.

摘要翻译： UV照射使用β-二酮或β-酮亚胺配体形成化合物增强金属的氧化和/或可升华配体化合物的形成。 可以使用UV /卤素气体或UV /臭氧处理来有效地将金属材料氧化成与配体形成化合物反应的合适形式，并且可以在暴露于配体形成化合物期间使用UV辐射以增强升华配体的形成 化合物。 氧化和配体化合物的形成可以顺序或同时进行。 该方法可用于块状金属去除，金属膜图案化或痕量金属去除。

公开(公告)号：US5580421A

公开(公告)日：1996-12-03

申请号：US360387

申请日：1994-12-21

申请人： C. Fred Hiatt ,  David C. Gray ,  Jeffery W. Butterbaugh

发明人： C. Fred Hiatt ,  David C. Gray ,  Jeffery W. Butterbaugh

IPC分类号： H01L21/302 ,  B08B7/00 ,  C23C16/02 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/32

CPC分类号： H01L21/02046 ,  B08B7/0057 ,  C23C16/0236 ,  H01L21/31116 ,  H01L21/32 ,  H01L21/67017 ,  H01L21/67115 ,  Y10S438/935

摘要： Apparatus and process for conditioning a substrate, contained in a hermetically sealed chamber fed with a conditioning gas which includes a reactive gas, the apparatus including a support for supporting the substrate in the chamber, the substrate being in a lower pressure reaction region of the chamber. A gas inlet is provided for feeding conditioning gas into a gas inlet region of the chamber which is at a higher pressure than the lower pressure reaction region so that the pressure differential causes the conditioning gas to flow toward the surface of the substrate wherein the conditioning gas component will chemically react with and condition the substrate surface, both said higher and lower pressure regions operating in a viscous flow regime. The substrate is supported such that a pressure bias is created across the surface of the substrate such that the gas, after it has chemically reacted with the substrate surface, flows radially outward from where it has reacted, toward the nearest edge of the substrate and out an exhaust outlet.

摘要翻译： 用于调节衬底的装置和方法，所述衬底包含在馈送有包括反应性气体的调节气体的气密密封室中，所述设备包括用于在腔室中支撑衬底的支撑件，衬底处于腔室的较低压力反应区域 。 提供了一个气体入口，用于将调节气体输送到腔室的气体入口区域中，该气体入口区域处于比低压反应区域更高的压力，使得压力差导致调节气体朝向衬底的表面流动，其中调节气体 所述组分将在粘性流动状态下操作的所述较高压力区域和较低压力区域将与底物表面发生化学反应和调节。 支撑衬底，使得在衬底的表面上产生压力偏压，使得气体在与衬底表面发生化学反应之后，已经从其已经反应的位置径向向外流动到衬底的最接近的边缘 排气口。

公开(公告)号：US09059104B2

公开(公告)日：2015-06-16

申请号：US13312148

申请日：2011-12-06

申请人： Anthony S. Ratkovich ,  Jeffery W. Butterbaugh ,  David Scott Becker

发明人： Anthony S. Ratkovich ,  Jeffery W. Butterbaugh ,  David Scott Becker

IPC分类号： B44C1/22 ,  H01L21/311 ,  H01L21/67

CPC分类号： H01L21/31111 ,  H01L21/67051 ,  H01L21/6708

摘要： A method of selectively removing silicon nitride from a substrate comprises providing a substrate having silicon nitride on a surface thereof; and dispensing phosphoric acid and sulfuric acid onto the surface of the substrate as a mixed acid liquid stream at a temperature greater than about 150° C. In this method, water is added to a liquid solution of the mixed acid liquid stream as or after the liquid solution of the mixed acid liquid stream passes through a nozzle.

摘要翻译： 从衬底选择性地去除氮化硅的方法包括在其表面上提供具有氮化硅的衬底; 并在高于约150℃的温度下将磷酸和硫酸作为混合酸液体流分配到基材表面上。在该方法中，将水加入混合酸液体液体的液体溶液中 混合酸液体液体的液体溶液通过喷嘴。

公开(公告)号：US20080006303A1

公开(公告)日：2008-01-10

申请号：US11825508

申请日：2007-07-06

申请人： Jeffery W. Butterbaugh ,  Tracy A. Gast

发明人： Jeffery W. Butterbaugh ,  Tracy A. Gast

IPC分类号： B08B3/00

CPC分类号： B08B3/02 ,  B05B7/0853 ,  H01L21/02052 ,  H01L21/67051

摘要： Particles are removed from a surface of a substrate by a method comprising causing liquid aerosol droplets comprising water and a tensioactive compound to contact the surface with sufficient force to remove particles from the surface.

摘要翻译： 通过包括使包含水和张力活性化合物的液体气雾剂液滴以足够的力与表面接触以从表面除去颗粒的方法从基材表面除去颗粒。

公开(公告)号：US06465374B1

公开(公告)日：2002-10-15

申请号：US09482222

申请日：2000-01-13

申请人： Jeffery W. Butterbaugh ,  Brent Schwab

发明人： Jeffery W. Butterbaugh ,  Brent Schwab

IPC分类号： H01L2100

CPC分类号： H01L21/02046 ,  C23C16/481 ,  H01L21/67115 ,  Y10S438/906 ,  Y10S977/841

摘要： A semiconductor substrate is heated via exposure to ultraviolet radiation substantially in the absence of a halogen containing chemical and subsequently exposed to a halogen-containing gas in the absence of ultraviolet radiation to remove contaminants therefrom.

摘要翻译： 通过暴露于基本上不含卤素化学品的紫外线辐射来加热半导体衬底，随后在不存在紫外线辐射的情况下暴露于含卤素气体以除去其中的污染物。