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    Method for producing a power semiconductor module, and power semiconductor module comprising a connection device
    2.
    发明授权
    Method for producing a power semiconductor module, and power semiconductor module comprising a connection device 有权
    功率半导体模块的制造方法以及包括连接装置的功率半导体模块

    公开(公告)号：US08283784B2

    公开(公告)日：2012-10-09

    申请号：US12797331

    申请日：2010-06-09

    申请人： Peter Beckedahl ,  Markus Knebel ,  Thomas Stockmeier

    发明人： Peter Beckedahl ,  Markus Knebel ,  Thomas Stockmeier

    IPC分类号： H01L23/52 ,  H01L21/768

    CPC分类号： H01L25/072 ,  H01L23/049 ,  H01L23/48 ,  H01L23/5387 ,  H01L24/24 ,  H01L24/32 ,  H01L2224/32188 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/014 ,  H01L2924/16195

    摘要： A method for making a power semiconductor module and a module produced by that method, wherein the module includes a substrate, a connection device and load terminal elements, wherein power semiconductor components are arranged on a conductor track of the substrate and connected to one of the load terminal element by the connection device. The power semiconductor module has auxiliary contact pads which can be connected to an external printed circuit board. The primary production step in this case is cohesively connecting respective first contact areas of the first conductor tracks to at least one second contact area of a power semiconductor component and at least one third contact area of a load terminal element; afterwards, the assemblage composed of at least one power semiconductor component of a connection device and load terminal elements is arranged to form a housing of the power semiconductor module.

    摘要翻译： 一种用于制造功率半导体模块和通过该方法制造的模块的方法，其中所述模块包括基板，连接装置和负载端子元件，其中功率半导体部件布置在所述基板的导体轨道上并连接到所述基板 通过连接装置加载终端元件。 功率半导体模块具有可连接到外部印刷电路板的辅助接触焊盘。 在这种情况下的主要生产步骤是将第一导体轨道的各个第一接触区域与功率半导体部件的至少一个第二接触区域和负载端子元件的至少一个第三接触区域内联连接; 之后，由连接装置的至少一个功率半导体部件和负载端子元件构成的组合被配置成形成功率半导体模块的壳体。

    Power semiconductor module with control functionality and integrated transformer
    3.
    发明授权
    Power semiconductor module with control functionality and integrated transformer 有权
    功率半导体模块具有控制功能和集成变压器

    公开(公告)号：US07982302B2

    公开(公告)日：2011-07-19

    申请号：US12622257

    申请日：2009-11-19

    申请人： Peter Beckedahl ,  Reinhard Herzer ,  Thomas Stockmeier

    发明人： Peter Beckedahl ,  Reinhard Herzer ,  Thomas Stockmeier

    IPC分类号： H01L23/52

    CPC分类号： H01F27/2804 ,  H01F2027/2809 ,  H01L23/50 ,  H01L23/645 ,  H01L25/072 ,  H01L25/16 ,  H01L2224/48091 ,  H01L2224/48472 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A power semiconductor module comprising: a substrate, a plurality of conductor tracks arranged thereon, the conductor tracks being electrically insulated from one another, and including power semiconductor components arranged thereon; a connecting device, composed of an alternating layer sequence of at least two electrically conductive layers and at least one electrically insulating layer disposed therebetween, for the circuit-conforming connection of the power semiconductor components, the conductor tracks and/or external contact devices. The electrically conductive layers form connecting tracks and at least one transformer is formed integrally with, and thus from the constituent parts of, the connecting device. The transformer is composed of at least one transmitter coil and at least one receiver coil, which are in each case arranged coaxially with respect to one another and are formed with spiral windings.

    摘要翻译： 一种功率半导体模块，包括：基板，布置在其上的多个导体轨道，所述导体轨道彼此电绝缘，并且包括布置在其上的功率半导体部件; 连接装置，由至少两个导电层的交替层序列和设置在其间的至少一个电绝缘层组成，用于功率半导体部件，导体轨道和/或外部接触装置的电路一致连接。 导电层形成连接轨道，并且至少一个变压器与连接装置一体形成，并且因此形成连接装置的组成部分。 变压器由至少一个发射器线圈和至少一个接收器线圈组成，每个接收器线圈在每种情况下彼此同轴地布置并且形成有螺旋绕组。

    Turn-off power semiconductor component, and also process for producing it
    7.
    发明授权
    Turn-off power semiconductor component, and also process for producing it 失效
    关断功率半导体元件，也是生产它的过程

    公开(公告)号：US5286981A

    公开(公告)日：1994-02-15

    申请号：US903947

    申请日：1992-06-26

    申请人： Klas Lilja ,  Kenneth Johansson ,  Thomas Stockmeier

    发明人： Klas Lilja ,  Kenneth Johansson ,  Thomas Stockmeier

    IPC分类号： H01L29/744 ,  E05B65/20 ,  H01L21/332 ,  H01L29/74 ,  H01L29/745 ,  H01L27/02 ,  H01L29/10

    CPC分类号： H01L29/7455

    摘要： A turn-off power semiconductor component subdivided into unit cells (EZ), including between an anode (A) and a cathode (K) in a semiconductor substrate (1) five layers in p-n-p-n-p sequence, namely an anode layer (10) an n-type base layer (9), a p-type base layer (8), a turn-off region (6), a cathode region (7) adjoining the turn-off region, and a p-doped short-circuit region (5). On the cathode side in every unit cell (EZ), a first MOSFET (M1) which can be driven via a first insulated gate electrode (G1) is provided for the purpose of switching between the five-layer structure and a conventional thyristor four-layer structure. A second MOSFET (M2) having a second gate electrode (G2) prevents a breakdown between the p-type short-circuit region (5) and the turn-off region (6) during turn-off. p-Type short-circuit region (5), turn-off region (6) and cathode region (7) are introduced in a self-aligning manner into the semiconductor substrate (1) through the windows (F1, F2) between the gate electrodes (G 1 and G2, respectively). Current filamentation during turn-off is effectively avoided by the switchable five-layer structure. The self-aligning production makes possible a component having precise patterning.

    摘要翻译： 提出了一种关闭功率半导体元件，其被细分为单元电池（EZ），并且在半导体衬底（1）中的阳极（A）和阴极（K）之间包括pnpnp序列中的五层，即 阳极层（10），n型基极层（9），p型基极层（8），截止区域（6），与截止区域相邻的阴极区域（7） p型p型短路区域（5）。 在每个单元电池（EZ）中，在阴极侧提供可通过第一绝缘栅电极（G1）触发的第一MOSFET（M1），用于在五层结构和常规晶闸管四 层结构。 具有第二栅电极（G2）的第二MOSFET（M2）防止在关断期间p型短路区域（5）和关断区域（6）之间的击穿。 p型短路区域（5），截止区域（6）和阴极区域（7）以自对准的方式通过窗口（F1，F2）引入到半导体衬底（1） 栅电极（G1和G2分别）。 可切换的五层结构有效地防止了关断时的电流丝线化。 自动对准生产使精确图案化的部件成为可能。

    Bidirectional semiconductor component that can be turned off
    8.
    发明授权
    Bidirectional semiconductor component that can be turned off 失效
    可以关闭的双向半导体元件

    公开(公告)号：US5040042A

    公开(公告)日：1991-08-13

    申请号：US514240

    申请日：1990-04-25

    申请人： Friedhelm Bauer ,  Thomas Stockmeier

    发明人： Friedhelm Bauer ,  Thomas Stockmeier

    IPC分类号： H01L29/744 ,  H01L29/74 ,  H01L29/745 ,  H01L29/747

    CPC分类号： H01L29/7455 ,  H01L29/747

    摘要： In the case of a symmetrically constructed TRIAC, which comprises a semiconductor substrate (20) with an internal n-base layer (9), two adjoining p-base layers (7, 11), two n-emitter regions (4, 12) let into the p-base layers (7, 11), two main electrodes (1, 17) arranged on the principal faces (29, 30), and two firing devices, a simplified control is achieved by means of MOS-controlled short circuits (3, 5, 6, 7 or 11, 13, 14, 16) at the n-emitter regions (4 or 12).

    摘要翻译： 在对称构造的TRIAC的情况下，其包括具有内部n基底层（9）的半导体衬底（20），两个相邻的p基底层（7,11），两个n个发射极区域（4,12） 放入p基层（7,11），布置在主面（29,30）上的两个主电极（1,17）和两个点火装置，通过MOS控制的短路实现简化的控制 （3，5，6，7或11，13，14，16）在n发射极区域（4或12）。

    Power semiconductor module with closed submodules
    9.
    发明授权
    Power semiconductor module with closed submodules 失效
    功率半导体模块封闭子模块

    公开(公告)号：US5982031A

    公开(公告)日：1999-11-09

    申请号：US102368

    申请日：1998-06-23

    申请人： Thomas Stockmeier

    发明人： Thomas Stockmeier

    IPC分类号： H01L25/10 ,  H01L25/11 ,  H01L25/16 ,  H01L25/18 ,  H01L23/34

    CPC分类号： H01L25/115 ,  H01L2224/48091 ,  H01L2224/4847 ,  H01L2224/48479 ,  H01L2224/8592 ,  H01L2924/1301 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/30107 ,  H01L2924/3011

    摘要： The present invention discloses a power semiconductor module 10 having encapsulated submodules 1 which, for example, is suitable for power switches, rectifiers for the like in industrial or traction drives. The submodules 1 have a sandwiched structure made up of a ceramic substrate, one or a few power semiconductor chips and a molybdenum wafer, and are potted in plastic. They are held in plug-in locations 19 on a common baseplate 11 and make contact via a stack arrangement of conductors 12, 14, 18. Retention and contact of the submodules 1 take place reversibly via pressure contacts 15, 16, 20, clamp contacts 21 or the like. Important advantages of the power semiconductor module 10 relate to the simple and easily scaleable structure, improved ability to withstand thermal load cycles, and the robustness and easy interchangeability of the submodules.

    摘要翻译： 本发明公开了一种具有封装的子模块1的功率半导体模块10，其例如适用于功率开关，工业或牵引驱动器中类似的整流器。 子模块1具有由陶瓷基板，一个或几个功率半导体芯片和钼晶片构成的夹层结构，并且被封装在塑料中。 它们被保持在公共基板11上的插入位置19中，并通过导体12,14,18的堆叠布置进行接触。子模块1的保持和接触通过压力接触15,16,20可逆地发生，夹紧触点 21等。 功率半导体模块10的重要优点涉及简单且易于缩放的结构，改进的承受热负荷循环的能力，以及子模块的鲁棒性和易互换性。

    Controllable power semiconductor component
    10.
    发明授权
    Controllable power semiconductor component 失效
    可控功率半导体元件

    公开(公告)号：US5661315A

    公开(公告)日：1997-08-26

    申请号：US579763

    申请日：1995-12-28

    申请人： Friedhelm Bauer ,  Reinhold Bayerer ,  Thomas Stockmeier

    发明人： Friedhelm Bauer ,  Reinhold Bayerer ,  Thomas Stockmeier

    IPC分类号： H01L29/423 ,  H01L29/739 ,  H01L29/74

    CPC分类号： H01L29/4238 ,  H01L29/7395

    摘要： In the case of a controllable power semiconductor component, which comprises at least one planar, essentially rectangular power semiconductor chip (13), which power semiconductor chip (13) has on its top side a large-area metallization layer (14) for the large-area electrical connection to a metal mating element (17, 19), and also a separate small-area connection region for the gate connection in the form of a gate pad (16), a simplified form of the metal mating element (17, 19) and adjustment thereof are achieved by virtue of the fact that the gate pad (16) is arranged in a corner of the power semiconductor chip (13).

    摘要翻译： 在可控功率半导体部件的情况下，其包括至少一个平面的，基本为矩形的功率半导体芯片（13），功率半导体芯片（13）在其顶侧具有大面积金属化层（14），用于大的 - 与金属配合元件（17,19）的电连接，以及用于栅极焊盘（16）形式的栅极连接的单独的小区域连接区域，金属配合元件（17,17）的简化形式， 通过栅极焊盘（16）布置在功率半导体芯片（13）的角部的事实来实现其调节。