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8 条记录 (耗时 0.021 秒)

    Forming metal silicide on silicon-containing features of a substrate
    1.
    发明授权
    Forming metal silicide on silicon-containing features of a substrate 失效
    在基底的含硅特征上形成金属硅化物

    公开(公告)号：US07485556B2

    公开(公告)日：2009-02-03

    申请号：US11084450

    申请日：2005-03-18

    申请人： Jeong Soo Byun ,  Jianxin Lei ,  Lisa Yang ,  Hien-Minh Huu Le

    发明人： Jeong Soo Byun ,  Jianxin Lei ,  Lisa Yang ,  Hien-Minh Huu Le

    IPC分类号： H01L21/28

    CPC分类号： C23C14/165 ,  H01L21/28518 ,  H01L21/2855 ,  H01L29/665 ,  H01L29/78

    摘要： A metal silicide layer is formed on silicon-containing features of a substrate in a chamber. A metal film is sputter deposited on the substrate and a portion of the sputter deposited metal film is silicided. In the process, sputtering gas is energized by applying an electrical bias potential across the metal sputtering target and the substrate support to sputter deposit metal from a target onto the substrate. At least a portion of the deposited sputtered metal is silicided by heating the substrate to a silicidation temperature exceeding about 200° C. to form a combined sputtered metal and metal silicide layer on the substrate. The remaining sputtered metal can be silicided by maintaining the substrate at the silicidation temperature to form the metal silicide layer.

    摘要翻译： 在室中的衬底的含硅特征上形成金属硅化物层。 金属膜被溅射沉积在衬底上，溅射沉积的金属膜的一部分被硅化。 在该过程中，溅射气体通过在金属溅射靶和衬底支撑件上施加电偏压来激发，以将金属从靶溅射到衬底上。 沉积的溅射金属的至少一部分通过将衬底加热到​​超过约200℃的硅化温度来硅化，以在衬底上形成组合的溅射金属和金属硅化物层。 剩余的溅射金属可以通过将衬底保持在硅化温度下来硅化，形成金属硅化物层。

    Forming metal silicide on silicon-containing features of a substrate
    2.
    发明申请
    Forming metal silicide on silicon-containing features of a substrate 失效
    在基底的含硅特征上形成金属硅化物

    公开(公告)号：US20060211202A1

    公开(公告)日：2006-09-21

    申请号：US11084450

    申请日：2005-03-18

    申请人： Jeong Byun ,  Jianxin Lei ,  Lisa Yang ,  Hien-Minh Le

    发明人： Jeong Byun ,  Jianxin Lei ,  Lisa Yang ,  Hien-Minh Le

    IPC分类号： H01L21/336

    CPC分类号： C23C14/165 ,  H01L21/28518 ,  H01L21/2855 ,  H01L29/665 ,  H01L29/78

    摘要： A metal suicide layer is formed on silicon-containing features of a substrate in a chamber. A metal film is sputter deposited on the substrate and a portion of the sputter deposited metal film is silicided. In the process, sputtering gas is energized by applying an electrical bias potential across the metal sputtering target and the substrate support to sputter deposit metal from a target onto the substrate. At least a portion of the deposited sputtered metal is silicided by heating the substrate to a silicidation temperature exceeding about 200° C. to form a combined sputtered metal and metal silicide layer on the substrate. The remaining sputtered metal can be silicided by maintaining the substrate at the silicidation temperature to form the metal silicide layer.

    摘要翻译： 在室中的衬底的含硅特征上形成金属硅化物层。 金属膜被溅射沉积在衬底上，溅射沉积的金属膜的一部分被硅化。 在该过程中，溅射气体通过在金属溅射靶和衬底支撑件上施加电偏压来激发，以将金属从靶溅射到衬底上。 沉积的溅射金属的至少一部分通过将衬底加热到​​超过约200℃的硅化温度来硅化，以在衬底上形成组合的溅射金属和金属硅化物层。 剩余的溅射金属可以通过将衬底保持在硅化温度下来硅化，形成金属硅化物层。

    Plasma treatment for ex-situ contact fill
    8.
    发明授权
    Plasma treatment for ex-situ contact fill 失效
    等离子体处理用于非原位接触填充

    公开(公告)号：US06297147B1

    公开(公告)日：2001-10-02

    申请号：US09092811

    申请日：1998-06-05

    申请人： Lisa Yang ,  Anish Tolia ,  Roderick Craig Mosely

    发明人： Lisa Yang ,  Anish Tolia ,  Roderick Craig Mosely

    IPC分类号： H01L214763

    CPC分类号： H01L21/76856 ,  C23C14/024 ,  C23C16/0272 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76873 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

    摘要： The present invention provides a method and apparatus for filling contacts, vias, trenches, and other patterns, in a substrate surface, particularly patterns having high aspect ratios. Generally, the present invention provides a method for removing oxygen from the surface of an oxidized metal layer prior to deposition of a subsequent metal. The oxidized metal is treated with a plasma consisting of nitrogen, hydrogen, or a mixture thereof. In one aspect of the invention, the metal layer is Ti, TiN, Ta, TaN, Ni, NiV, or V, and a subsequent wetting layer is deposited using either CVD techniques or electroplating, such as CVD aluminum (Al) or electroplating of copper (Cu). The metal layer can be exposed to oxygen or the atmosphere and then treated with a plasma of nitrogen and/or hydrogen in two or more cycles to remove or reduce oxidation of the surface of the metal layer and nucleate the growth of a subsequent metal layer thereon.

    摘要翻译： 本发明提供一种用于在衬底表面中填充触点，通孔，沟槽和其它图案的方法和装置，特别是具有高纵横比的图案。 通常，本发明提供了在沉积后续金属之前从氧化金属层的表面除去氧的方法。 用由氮，氢或其混合物组成的等离子体处理氧化金属。 在本发明的一个方面，金属层是Ti，TiN，Ta，TaN，Ni，NiV或V，并且随后的润湿层使用CVD技术或电镀，例如CVD铝（Al）或电镀 铜（Cu）。 金属层可以暴露于氧气或大气中，然后在两个或更多个循环中用氮和/或氢气等离子体处理以去除或减少金属层表面的氧化并使其后续金属层的生长成核 。