公开(公告)号：US07103484B1

公开(公告)日：2006-09-05

申请号：US10698222

申请日：2003-10-31

申请人： Jianou Shi ,  Steve Yifeng Cui ,  Shiyou Pei ,  Zhiwei (Steve) Xu ,  Haiyong (Howard) Wang

发明人： Jianou Shi ,  Steve Yifeng Cui ,  Shiyou Pei ,  Zhiwei (Steve) Xu ,  Haiyong (Howard) Wang

IPC分类号： G01R15/00 ,  G01R31/26

CPC分类号： G01N27/205 ,  G01R31/305 ,  H01L22/14 ,  H01L2924/0002 ,  H01L2924/00

摘要： Non-contact methods for determining a parameter of an insulating film are provided. One method includes measuring at least two surface voltages of the insulating film. The surface voltages are measured after different charge depositions. Measuring the surface voltages is performed in two or more sequences. The method also includes determining individual parameters for the two or more sequences from the surface voltages and the charge depositions. In addition, the method includes determining the parameter of the insulating film as an average of the individual parameters. The parameter is substantially independent of leakage in the insulating film. Another method includes determining a characteristic of nitrogen in an insulating film using two parameters of the insulating film selected from equivalent oxide thickness, optical thickness, and a measure of leakage through the insulating film. The characteristic may be a nitrogen dose, a nitrogen percentage, or a presence of nitrogen in the insulating film.

摘要翻译： 提供了用于确定绝缘膜的参数的非接触方法。 一种方法包括测量绝缘膜的至少两个表面电压。 在不同的电荷沉积之后测量表面电压。 以两个或更多个顺序进行表面电压的测量。 该方法还包括从表面电压和电荷沉积确定两个或多个序列的各个参数。 此外，该方法包括将绝缘膜的参数确定为各个参数的平均值。 该参数基本上与绝缘膜中的泄漏无关。 另一种方法包括使用选自等效氧化物厚度，光学厚度和通过绝缘膜的泄漏的测量的绝缘膜的两个参数来确定绝缘膜中的氮的特性。 该特性可以是绝缘膜中的氮剂量，氮百分比或氮的存在。

公开(公告)号：US06909291B1

公开(公告)日：2005-06-21

申请号：US10606066

申请日：2003-06-24

申请人： Zhiwei (Steve) Xu ,  Jianou Shi ,  Shiyou Pei ,  Mahmood Mirzaaghaeian ,  Jeffrey A. Rzepiela

发明人： Zhiwei (Steve) Xu ,  Jianou Shi ,  Shiyou Pei ,  Mahmood Mirzaaghaeian ,  Jeffrey A. Rzepiela

IPC分类号： G01N27/00 ,  G01R35/00 ,  G01R31/02

CPC分类号： G01N27/002

摘要： A method and a system for calibrating the work function of a non-contact voltage sensor are provided. The method includes preparing a reference sample to have a stable work function, measuring a voltage of the sample using a non-contact voltage sensor, and determining a work function correction factor of the sensor from the measured voltage. In turn, the calibrated work function may be used to adjust voltages of substrates measured by the sensor. A corona gun which includes a first electrode and one or more conductive rods is provided. In some embodiments, the conductive rods may be angled between 0 and 90 degrees with respect to a first electrode sidewall and/or be concentrically arranged less than 90 degrees from each other. In addition or alternatively, the corona gun may be adapted to alter its length and/or include a second electrode partially inset within a space surrounded by the first electrode.

摘要翻译： 提供了一种用于校准非接触式电压传感器的功能的方法和系统。 该方法包括制备参考样品以具有稳定的功函数，使用非接触电压传感器测量样品的电压，以及根据测量的电压确定传感器的功函数校正因子。 反过来，校准的功函数可以用于调节由传感器测量的衬底的电压。 提供包括第一电极和一个或多个导电棒的电晕枪。 在一些实施例中，导电棒相对于第一电极侧壁可以在0度和90度之间成角度和/或彼此同心布置成小于90度。 另外或替代地，电晕枪可以适于改变其长度和/或包括在由第一电极包围的空间内部分插入的第二电极。

公开(公告)号：US07110238B1

公开(公告)日：2006-09-19

申请号：US11154991

申请日：2005-06-16

申请人： Zhiwei (Steve) Xu ,  Jianou Shi ,  Shiyou Pei ,  Mahmood Mirzaaghaeian ,  Jeffrey A. Rzepiela

发明人： Zhiwei (Steve) Xu ,  Jianou Shi ,  Shiyou Pei ,  Mahmood Mirzaaghaeian ,  Jeffrey A. Rzepiela

IPC分类号： H01H47/00

CPC分类号： G01N27/002

摘要： A method and a system for calibrating the work function of a non-contact voltage sensor are provided. The method includes preparing a reference sample to have a stable work function, measuring a voltage of the sample using a non-contact voltage sensor, and determining a work function correction factor of the sensor from the measured voltage. In turn, the calibrated work function may be used to adjust voltages of substrates measured by the sensor. A corona gun which includes a first electrode and one or more conductive rods is provided. In some embodiments, the conductive rods may be angled between 0 and 90 degrees with respect to a first electrode sidewall and/or be concentrically arranged less than 90 degrees from each other. In addition or alternatively, the corona gun may be adapted to alter its length and/or include a second electrode partially inset within a space surrounded by the first electrode.

摘要翻译： 提供了一种用于校准非接触式电压传感器的功能的方法和系统。 该方法包括制备参考样品以具有稳定的功函数，使用非接触电压传感器测量样品的电压，以及根据测量的电压确定传感器的功函数校正因子。 反过来，校准的功函数可以用于调节由传感器测量的衬底的电压。 提供包括第一电极和一个或多个导电棒的电晕枪。 在一些实施例中，导电棒相对于第一电极侧壁可以在0度和90度之间成角度和/或彼此同心布置成小于90度。 另外或替代地，电晕枪可以适于改变其长度和/或包括在由第一电极包围的空间内部分插入的第二电极。

公开(公告)号：US07075318B1

公开(公告)日：2006-07-11

申请号：US10754332

申请日：2004-01-09

申请人： Xiafang (Michelle) Zhang ,  Zhiwei (Steve) Xu ,  Jianou Shi ,  Bao Vu ,  Thomas G. Miller ,  Gregory S. Horner

发明人： Xiafang (Michelle) Zhang ,  Zhiwei (Steve) Xu ,  Jianou Shi ,  Bao Vu ,  Thomas G. Miller ,  Gregory S. Horner

IPC分类号： G01R31/302 ,  G01R27/26

CPC分类号： G01R31/2648 ,  G01R27/26 ,  G01R31/312

摘要： Methods for determining an electrical parameter of an insulating film are provided. One method includes measuring a surface potential of a leaky insulating film without inducing leakage across the insulating film and determining the electrical parameter from the surface potential. Another method includes applying an electrical field across the insulating film. Leakage across the insulating film caused by the electrical field is negligible. The method also includes measuring a surface potential of the specimen and determining a potential of the substrate. In addition, the method includes determining a pure voltage across the insulating film from the surface potential and the substrate potential. The method further includes determining the electrical parameter from the pure voltage. The electrical parameter may be capacitance or electrical thickness of the insulating film.

摘要翻译： 提供了确定绝缘膜的电参数的方法。 一种方法包括测量泄漏绝缘膜的表面电位，而不会导致绝缘膜上的泄漏并且从表面电位确定电参数。 另一种方法包括在绝缘膜上施加电场。 由电场引起的绝缘膜上的泄漏可忽略不计。 该方法还包括测量样品的表面电位并确定衬底的电位。 此外，该方法包括从表面电位和衬底电位确定绝缘膜两端的纯电压。 该方法还包括从纯电压确定电参数。 电气参数可以是绝缘膜的电容或电气厚度。

公开(公告)号：US07397254B1

公开(公告)日：2008-07-08

申请号：US11277053

申请日：2006-03-21

申请人： Xiafang (Michelle) Zhang ,  Zhiwei (Steve) Xu ,  Jianou Shi ,  Quoc-Bao Vu ,  Thomas G. Miller ,  Gregory S. Horner

发明人： Xiafang (Michelle) Zhang ,  Zhiwei (Steve) Xu ,  Jianou Shi ,  Quoc-Bao Vu ,  Thomas G. Miller ,  Gregory S. Horner

IPC分类号： G01R31/302

CPC分类号： G01R31/2648 ,  G01R27/26 ,  G01R31/312

摘要： Methods for determining an electrical parameter of an insulating film are provided. One method includes measuring a surface potential of a leaky insulating film without inducing leakage across the insulating film and determining the electrical parameter from the surface potential. Another method includes applying an electrical field across the insulating film. Leakage across the insulating film caused by the electrical field is negligible. The method also includes measuring a surface potential of the specimen and determining a potential of the substrate. In addition, the method includes determining a pure voltage across the insulating film from the surface potential and the substrate potential. The method further includes determining the electrical parameter from the pure voltage. The electrical parameter may be capacitance or electrical thickness of the insulating film.

摘要翻译： 提供了确定绝缘膜的电参数的方法。 一种方法包括测量泄漏绝缘膜的表面电位，而不会导致绝缘膜上的泄漏并且从表面电位确定电参数。 另一种方法包括在绝缘膜上施加电场。 由电场引起的绝缘膜上的泄漏可忽略不计。 该方法还包括测量样品的表面电位并确定衬底的电位。 此外，该方法包括从表面电位和衬底电位确定绝缘膜两端的纯电压。 该方法还包括从纯电压确定电参数。 电气参数可以是绝缘膜的电容或电气厚度。

公开(公告)号：US20070109003A1

公开(公告)日：2007-05-17

申请号：US11465888

申请日：2006-08-21

申请人： Jianou Shi ,  Xiafang Zhang ,  Shiyou Pei ,  Shu Huang ,  Dennis Yeh ,  Jeffrey Rzepiela ,  Yiping Feng ,  Ahmad Khan

发明人： Jianou Shi ,  Xiafang Zhang ,  Shiyou Pei ,  Shu Huang ,  Dennis Yeh ,  Jeffrey Rzepiela ,  Yiping Feng ,  Ahmad Khan

IPC分类号： G01R31/02

CPC分类号： G01R31/2831 ,  G01R31/2856 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： Test pads, methods, and systems for measuring properties of a wafer are provided. One test pad formed on a wafer includes a test structure configured such that one or more electrical properties of the test structure can be measured. The test pad also includes a conductive layer formed between the test structure and the wafer. The conductive layer prevents structures located under the test structure between the conductive layer and the wafer from affecting the one or more electrical properties of the test structure during measurement. One method for assessing plasma damage of a wafer includes measuring one or more electrical properties of a test structure formed on the wafer and determining an index characterizing the plasma damage of the test structure using the one or more electrical properties.

摘要翻译： 提供了用于测量晶片性能的测试垫，方法和系统。 形成在晶片上的一个测试焊盘包括测试结构，其被配置为使得可以测量测试结构的一个或多个电特性。 测试垫还包括在测试结构和晶片之间形成的导电层。 导电层防止在测量期间位于导电层和晶片之间的测试结构下方的结构影响测试结构的一个或多个电性能。 用于评估晶片的等离子体损伤的一种方法包括测量形成在晶片上的测试结构的一个或多个电特性，并使用一个或多个电性质确定表征测试结构的等离子体损伤的指标。

公开(公告)号：US07187186B2

公开(公告)日：2007-03-06

申请号：US11078669

申请日：2005-03-10

申请人： Jianou Shi ,  Jeffrey Rzepiela ,  Shiyou Pei ,  Zhiwei Xu ,  John Alexander

发明人： Jianou Shi ,  Jeffrey Rzepiela ,  Shiyou Pei ,  Zhiwei Xu ,  John Alexander

IPC分类号： G01R31/302

CPC分类号： G01R31/311 ,  G01R31/2648

摘要： Various methods and systems for determining one or more properties of a specimen are provided. One system for determining a property of a specimen is configured to illuminate a specimen with different wavelengths of light substantially simultaneously. The different wavelengths of light are modulated at substantially the same frequency. The system is also configured to perform at least two measurements on the specimen. A minority carrier diffusion length of the specimen may be determined from the measurements and absorption coefficients of the specimen at the different wavelengths. Another system for detecting defects on a specimen is configured to deposit a charge at multiple locations on an upper surface of the specimen. This system is also configured to measure a vibration of a probe at the multiple locations. Defects may be detected on the specimen using a two-dimensional map of the specimen generated from the measured surface voltages.

摘要翻译： 提供了用于确定样本的一个或多个属性的各种方法和系统。 用于确定样本特性的一个系统被配置为基本上同时照射具有不同波长的光的样本。 不同波长的光以基本上相同的频率被调制。 该系统还被配置为对样本进行至少两次测量。 样品的少数载流子扩散长度可以根据不同波长的样品的测量和吸收系数来确定。 用于检测样本上的缺陷的另一系统被配置为在样本的上表面上的多个位置沉积电荷。 该系统还被配置为测量在多个位置处的探针的振动。 可以使用从测量的表面电压产生的样本的二维图来在样本上检测缺陷。

公开(公告)号：US07893703B2

公开(公告)日：2011-02-22

申请号：US11465893

申请日：2006-08-21

申请人： Jeffrey A. Rzepiela ,  Yiping Feng ,  Shiyou Pei ,  Alexander Kagan ,  Jianou Shi ,  Sergio Edelstein

发明人： Jeffrey A. Rzepiela ,  Yiping Feng ,  Shiyou Pei ,  Alexander Kagan ,  Jianou Shi ,  Sergio Edelstein

IPC分类号： G01R31/308

CPC分类号： G01R31/2831 ,  G01R31/2856 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： Systems and methods for controlling deposition of a charge on a wafer for measurement of one or more electrical properties of the wafer are provided. One system includes a corona source configured to deposit the charge on the wafer and a sensor configured to measure one or more conditions within the corona source. This system also includes a control subsystem configured to alter one or more parameters of the corona source based on the one or more conditions. Another system includes a corona source configured to deposit the charge on the wafer and a mixture of gases disposed within a discharge chamber of the corona source during the deposition of the charge. The mixture of gases alters one or more parameters of the charge deposited on the wafer.

摘要翻译： 提供了用于控制晶片上的电荷沉积以测量晶片的一个或多个电性能的系统和方法。 一个系统包括配置成将电荷沉积在晶片上的电晕源和配置成测量电晕源内的一个或多个条件的传感器。 该系统还包括配置为基于一个或多个条件来改变电晕源的一个或多个参数的控制子系统。 另一种系统包括电晕源，其被配置为在电荷沉积期间将电荷沉积在晶片上以及布置在电晕源的放电室内的气体混合物。 气体混合物改变沉积在晶片上的电荷的一个或多个参数。

公开(公告)号：US20070126458A1

公开(公告)日：2007-06-07

申请号：US11669209

申请日：2007-01-31

申请人： Jianou Shi ,  Jeffrey Rzepiela ,  Shiyou Pei ,  Zhiwei Xu ,  John Alexander

发明人： Jianou Shi ,  Jeffrey Rzepiela ,  Shiyou Pei ,  Zhiwei Xu ,  John Alexander

IPC分类号： G01R31/26

CPC分类号： G01R31/311 ,  G01R31/2648

摘要： Various methods and systems for determining one or more properties of a specimen are provided. One system for determining a property of a specimen is configured to illuminate a specimen with different wavelengths of light substantially simultaneously. The different wavelengths of light are modulated at substantially the same frequency. The system is also configured to perform at least two measurements on the specimen. A minority carrier diffusion length of the specimen may be determined from the measurements and absorption coefficients of the specimen at the different wavelengths. Another system for detecting defects on a specimen is configured to deposit a charge at multiple locations on an upper surface of the specimen. This system is also configured to measure a vibration of a probe at the multiple locations. Defects may be detected on the specimen using a two-dimensional map of the specimen generated from the measured surface voltages.

摘要翻译： 提供了用于确定样本的一个或多个属性的各种方法和系统。 用于确定样本特性的一个系统被配置为基本上同时照射具有不同波长的光的样本。 不同波长的光以基本上相同的频率被调制。 该系统还被配置为对样本进行至少两次测量。 样品的少数载流子扩散长度可以根据不同波长的样品的测量和吸收系数来确定。 用于检测样本上的缺陷的另一系统被配置为在样本的上表面上的多个位置沉积电荷。 该系统还被配置为测量在多个位置处的探针的振动。 可以使用从测量的表面电压产生的样本的二维图来在样本上检测缺陷。

公开(公告)号：US07345306B1

公开(公告)日：2008-03-18

申请号：US11421855

申请日：2006-06-02

申请人： Sergio Edelstein ,  Eric F. Bouche ,  Jianou Shi ,  Shiyou Pei ,  Xiafang Zhang

发明人： Sergio Edelstein ,  Eric F. Bouche ,  Jianou Shi ,  Shiyou Pei ,  Xiafang Zhang

IPC分类号： H01L23/58

CPC分类号： G01R31/303 ,  G01R31/2648 ,  H01L22/14

摘要： A method of measuring electrical characteristics of a gate dielectric. The gate dielectric is local annealed by directing a highly localized energy source at the measurement area, such that the measurement area is brought to an annealing temperature while surrounding structures are not significantly heated. While heating the measurement area, a flow of a gas containing a percentage of hydrogen, deuterium, or water vapor at a flow rate is directed to the measurement area. A charge is inducted on the measurement area and the electrical characteristics of the gate dielectric are measured using non contact electrical probing.

摘要翻译： 测量栅极电介质的电特性的方法。 栅极电介质通过在测量区域处引导高度局部化的能量源进行局部退火，使得测量区域达到退火温度，而周围结构不被显着加热。 在加热测量区域的同时，以一定的流量将含有一定百分比的氢，氘或水蒸汽的气体流动到测量区域。 在测量区域上引入电荷，并且使用非接触电探测来测量栅极电介质的电特性。