公开(公告)号：US6060215A

公开(公告)日：2000-05-09

申请号：US49056

申请日：1998-03-27

申请人： Jin Amanokura ,  Fumihiko Ota ,  Ritsuko Obata ,  Toshihiko Akahori ,  Kenji Suzuki ,  Hiroshi Nishizawa ,  Katsunori Tsuchiya ,  Takao Hirayama ,  Hiroaki Hirakura

发明人： Jin Amanokura ,  Fumihiko Ota ,  Ritsuko Obata ,  Toshihiko Akahori ,  Kenji Suzuki ,  Hiroshi Nishizawa ,  Katsunori Tsuchiya ,  Takao Hirayama ,  Hiroaki Hirakura

IPC分类号： G03F7/037 ,  H05K3/28

CPC分类号： G03F7/037 ,  H05K3/287

摘要： A photosensitive resin composition comprising (A) a resin having an amide bond, an oxyalkylene group and a carboxyl group, (B) a photopolymerizable compound having an ethylenically unsaturated group and (C) a photopolymerization initiator has an alkali developability, good sensitivity and photocurability, an efficient pattern formability by photolithography, a good application workability to a film and is capable of producing cured products having good folding endurance, solder reflow heat resistance, solvent resistance, bondability and nonflammability and suitable for producing a photosensitive element, a photosensitive laminate and a flexible printed circuit board.

摘要翻译： 包含（A）具有酰胺键，氧化烯基和羧基的树脂的感光树脂组合物，（B）具有烯属不饱和基团的光聚合性化合物和（C）光聚合引发剂具有碱显影性，良好的灵敏度和光固化性 通过光刻法有效的图案成形性，对膜的良好的应用可加工性，并且能够生产具有良好的耐折性，耐回焊耐热性，耐溶剂性，粘合性和不燃性的固化产物，并且适用于制备感光元件，感光层压板和 柔性印刷电路板。

公开(公告)号：US20120238094A1

公开(公告)日：2012-09-20

申请号：US13510273

申请日：2011-01-04

申请人： Hisataka Minami ,  Jin Amanokura ,  Sou Anzai

发明人： Hisataka Minami ,  Jin Amanokura ,  Sou Anzai

IPC分类号： C09K13/06 ,  H01L21/306

CPC分类号： H01L21/3212 ,  B24B37/044 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/30625 ,  H01L21/32115 ,  H01L21/7684

摘要： The CMP polishing liquid of the invention comprises a metal salt containing at least one type of metal selected from the group consisting of metals of Groups 8, 11, 12 and 13, 1,2,4-triazole, a phosphorus acid, an oxidizing agent and abrasive grains. The polishing method of the invention comprises a step of polishing at least a palladium layer with an abrasive cloth while supplying a CMP polishing liquid between the palladium layer of a substrate having the palladium layer and the abrasive cloth, wherein the CMP polishing liquid comprises a metal salt containing at least one type of metal selected from the group consisting of metals of Groups 8, 11, 12 and 13, 1,2,4-triazole, a phosphorus acid, an oxidizing agent and abrasive grains.

摘要翻译： 本发明的CMP抛光液包含含有选自第8,11,12和13族金属中的至少一种金属的金属盐，1,2,4-三唑，磷酸，氧化剂 和磨粒。 本发明的抛光方法包括在具有研磨布的至少一层钯层上抛光，同时在具有钯层的基底的钯层与研磨布之间提供CMP抛光液的步骤，其中CMP抛光液包括金属 含有选自第8,11,12和13族金属中的至少一种金属的盐，1,2,4-三唑，磷酸，氧化剂和磨料颗粒。

公开(公告)号：US20090156007A1

公开(公告)日：2009-06-18

申请号：US12320752

申请日：2009-02-04

申请人： Jin Amanokura ,  Takafumi Sakurada ,  Sou Anzai ,  Masato Fukasawa ,  Shouichi Sasaki

发明人： Jin Amanokura ,  Takafumi Sakurada ,  Sou Anzai ,  Masato Fukasawa ,  Shouichi Sasaki

IPC分类号： H01L21/304

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463

摘要： The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive of which surface has been modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.

摘要翻译： 本发明涉及用于形成半导体器件布线的工艺中的抛光用抛光浆料和抛光方法等。 提供抛光浆料，即使抛光表面由两种或更多种物质制成，并且还能够抑制抛光后的金属残留和划痕，并且使用这种方法进行化学机械抛光，从而提供具有高平整度的抛光表面。 本发明的研磨浆是研磨含有表面活性剂和有机溶剂中的至少一种，金属氧化物溶解剂和水的研磨浆料，或含有表面经烷基改性的水和研磨剂的研磨浆料， 优选地，其还含有金属氧化剂，水溶性聚合物和金属抑制剂。

公开(公告)号：US08821750B2

公开(公告)日：2014-09-02

申请号：US12527607

申请日：2008-02-22

申请人： Jin Amanokura ,  Takafumi Sakurada ,  Sou Anzai ,  Takashi Shinoda ,  Shigeru Nobe

发明人： Jin Amanokura ,  Takafumi Sakurada ,  Sou Anzai ,  Takashi Shinoda ,  Shigeru Nobe

IPC分类号： C09G1/02 ,  C23F1/18 ,  C23F1/26 ,  H01L21/304 ,  H01L21/306

CPC分类号： C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  C23F1/18 ,  C23F1/26 ,  H01L21/30625 ,  H01L21/3212

摘要： The present invention relates to a metal polishing slurry containing abrasive grains, a metal-oxide-dissolving agent, and water, wherein the abrasive grains contain two or more abrasive grain species different from each other in average secondary particle diameter. Using the metal polishing slurry of the present invention, a metal polishing slurry can be obtained which gives a large polishing rate of an interlayer dielectric layer, and is high in the flatness of the polished surface. This metal polishing slurry can provide suitable method for a semiconductor device which is excellent in being made finer and thinner and in dimension precision and in electric characteristics, is high in reliability, and can attain a decrease in costs.

摘要翻译： 本发明涉及含有磨粒，金属氧化物溶解剂和水的金属抛光浆料，其中磨粒含有平均二次粒径彼此不同的两种或更多种磨粒。 使用本发明的金属研磨浆，可以得到层状电介质层的研磨速度高的金属研磨浆料，并且抛光面的平坦度高。 这种金属抛光浆料可以提供适合于制造更细和更薄，尺寸精度和电特性优异的可靠性高的半导体器件的方法，并且可以降低成本。

公开(公告)号：US08084362B2

公开(公告)日：2011-12-27

申请号：US11802813

申请日：2007-05-25

申请人： Jin Amanokura ,  Takafumi Sakurada ,  Sou Anzai ,  Masato Fukasawa ,  Shouichi Sasaki

发明人： Jin Amanokura ,  Takafumi Sakurada ,  Sou Anzai ,  Masato Fukasawa ,  Shouichi Sasaki

IPC分类号： H01L21/302

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463

摘要： The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive, wherein the surface of the abrasive is modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.

摘要翻译： 本发明涉及用于形成半导体器件布线的工艺中的抛光用抛光浆料和抛光方法等。 提供抛光浆料，即使抛光表面由两种或更多种物质制成，并且还能够抑制抛光后的金属残留和划痕，并且使用这种方法进行化学机械抛光，从而提供具有高平整度的抛光表面。 本发明的研磨浆是研磨含有表面活性剂和有机溶剂中的至少一种，金属氧化物溶解剂和水的研磨浆料，或含有水和研磨剂的研磨浆料，其中研磨剂的表面用烷基 并且优选还包含金属氧化剂，水溶性聚合物和金属抑制剂。

公开(公告)号：US20100323584A1

公开(公告)日：2010-12-23

申请号：US12668096

申请日：2008-07-08

申请人： Kouji Haga ,  Masato Fukasawa ,  Jin Amanokura ,  Hiroshi Nakagawa

发明人： Kouji Haga ,  Masato Fukasawa ,  Jin Amanokura ,  Hiroshi Nakagawa

IPC分类号： B24B1/00 ,  C09K13/00

CPC分类号： H01L21/30625 ,  C09G1/02 ,  H01L21/3212

摘要： The invention relates to a polishing liquid for metal film comprising 7.0% by weight or more of an oxidizer for metal, a water-soluble polymer, an oxidized metal dissolving agent, a metal anticorrosive agent and water, provided that the total amount of the polishing liquid for metal film is 100% by weight, wherein the water-soluble polymer has a weight average molecular weight of 150,000 or more and is at least one member selected from among a polycarboxylic acid, a salt of a polycarboxylic acid, and a polycarboxylic acid ester. According to the invention, provided is a polishing liquid for metal film, by which polishing can be performed at a high rate even under a polishing pressure as low as 1 psi or lower, and such that a polished film after polishing is excellent in planarity, furthermore, with which a high polishing rate can be obtained even in an initial stage of polishing, and provided is a polishing method using the polishing liquid.

摘要翻译： 本发明涉及一种用于金属膜的抛光液，其包含7.0重量％或更多的金属氧化剂，水溶性聚合物，氧化金属溶解剂，金属防腐剂和水，条件是抛光总量 金属膜用液体为100重量％，其中，所述水溶性聚合物的重均分子量为15万以上，为选自多元羧酸，多元羧酸和多元羧酸中的至少1种 酯。 根据本发明，提供了一种用于金属膜的抛光液，即使在低至1psi或更低的抛光压力下也可以以高速率进行抛光，并且抛光后的抛光膜的平面度优异， 此外，即使在研磨的初始阶段也可以获得高抛光速率，并且提供了使用抛光液的抛光方法。

公开(公告)号：US10796921B2

公开(公告)日：2020-10-06

申请号：US13377457

申请日：2010-02-05

申请人： Hisataka Minami ,  Ryouta Saisyo ,  Jin Amanokura ,  Yuuhei Okada ,  Hiroshi Ono

发明人： Hisataka Minami ,  Ryouta Saisyo ,  Jin Amanokura ,  Yuuhei Okada ,  Hiroshi Ono

IPC分类号： H01L21/321 ,  C09G1/02

摘要： The CMP polishing liquid for polishing palladium of this invention comprises an organic solvent, 1,2,4-triazole, a phosphorus acid compound, an oxidizing agent and an abrasive. The substrate polishing method is a method for polishing a substrate with a polishing cloth while supplying a CMP polishing liquid between the substrate and the polishing cloth, wherein the substrate is a substrate with a palladium layer on the side facing the polishing cloth, and the CMP polishing liquid is a CMP polishing liquid comprising an organic solvent, 1,2,4-triazole, a phosphorus acid compound, an oxidizing agent and an abrasive.

公开(公告)号：US08481428B2

公开(公告)日：2013-07-09

申请号：US13299699

申请日：2011-11-18

申请人： Jin Amanokura ,  Takafumi Sakurada ,  Sou Anzai ,  Masato Fukasawa ,  Shouichi Sasaki

发明人： Jin Amanokura ,  Takafumi Sakurada ,  Sou Anzai ,  Masato Fukasawa ,  Shouichi Sasaki

IPC分类号： H01L21/302

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463

摘要： The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive of which surface has been modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.

公开(公告)号：US20110027997A1

公开(公告)日：2011-02-03

申请号：US12937463

申请日：2009-04-16

申请人： Takashi Shinoda ,  Takaaki Tanaka ,  Mamiko Kanamaru ,  Jin Amanokura

发明人： Takashi Shinoda ,  Takaaki Tanaka ,  Mamiko Kanamaru ,  Jin Amanokura

IPC分类号： H01L21/302 ,  C09K3/14

CPC分类号： C09K3/1463 ,  B24B37/044 ,  C09G1/02 ,  H01L21/31053 ,  H01L21/3212

摘要： The present invention can provide a polishing liquid for CMP having good dispersion stability and a high polishing rate in polishing of interlayer insulating films and a polishing method. Disclosed a polishing liquid for CMP comprising: a medium; and colloidal silica particles dispersed in the medium, a blending amount of the colloidal silica particles being 2.0 to 8.0% by mass relative to 100% by mass of the polishing liquid, wherein the colloidal silica particles satisfy the following conditions (1) to (3): (1) a two-axis average primary particle diameter (R1) obtained from images of twenty arbitrarily selected colloidal silica particles observed by a scanning electron microscope is within the range of 35 to 55 nm; (2) a value S1/S0 obtained by dividing a specific surface area (S1) of a colloidal silica particle measured by BET method by a calculated specific surface area (S0) of a true sphere having the same particle diameter as the two-axis average primary particle diameter (R1) determined by (1) above is 1.20 or less; and (3) a ratio, association degree: RS/R1, of a secondary particle diameter (RS) of the colloidal silica particles measured with a dynamic light scattering particle size distribution analyzer and the two-axis average primary particle diameter (R1) determined by (1) above in the polishing liquid for CMP is 1.30 or less.

摘要翻译： 本发明可以提供一种用于CMP的抛光液，其具有在层间绝缘膜的研磨中具有良好的分散稳定性和高抛光速率以及抛光方法。 公开了一种用于CMP的抛光液，包括：介质; 和分散在该介质中的胶体二氧化硅粒子，相对于100质量％的研磨液，胶体二氧化硅粒子的配合量为2.0〜8.0质量％，其中胶态二氧化硅粒子满足下述条件（1）〜（3） ）：（1）通过扫描电子显微镜观察到的20个任意选择的胶体二氧化硅粒子的图像得到的2轴平均一次粒径（R1）在35〜55nm的范围内， （2）将通过BET法测定的胶体二氧化硅粒子的比表面积（S1）除以与两轴相同粒径的真球的计算比表面积（S0）得到的值S1 / S0 由（1）确定的平均一次粒径（R1）为1.20以下; 和（3）用动态光散射粒度分布分析仪测定的胶体二氧化硅粒子的二次粒径（RS）与双轴平均一次粒径（R1）的比例，相关度：RS / R1 在CMP抛光液中的（1）以上为1.30以下。

公开(公告)号：US20120100718A1

公开(公告)日：2012-04-26

申请号：US13377457

申请日：2010-02-05

申请人： Hisataka Minami ,  Ryouta Saisyo ,  Jin Amanokura ,  Yuuhei Okada ,  Hiroshi Ono

发明人： Hisataka Minami ,  Ryouta Saisyo ,  Jin Amanokura ,  Yuuhei Okada ,  Hiroshi Ono

IPC分类号： H01L21/304 ,  C09K13/06

CPC分类号： H01L21/3212 ,  C09G1/02

摘要： The CMP polishing liquid for polishing palladium of this invention comprises an organic solvent, 1,2,4-triazole, a phosphorus acid compound, an oxidizing agent and an abrasive. The substrate polishing method is a method for polishing a substrate with a polishing cloth while supplying a CMP polishing liquid between the substrate and the polishing cloth, wherein the substrate is a substrate with a palladium layer on the side facing the polishing cloth, and the CMP polishing liquid is a CMP polishing liquid comprising an organic solvent, 1,2,4-triazole, a phosphorus acid compound, an oxidizing agent and an abrasive.

摘要翻译： 用于抛光本发明钯的CMP抛光液包括有机溶剂，1,2,4-三唑，磷酸化合物，氧化剂和研磨剂。 基板研磨方法是在基板和研磨布之间供给CMP抛光液的同时用抛光布对基板进行研磨的方法，其中基板是在面向研磨布的一侧上具有钯层的基板，CMP 抛光液是包含有机溶剂，1,2,4-三唑，磷酸化合物，氧化剂和研磨剂的CMP抛光液。