Abstract:
A method for fabricating a light emitting device is provided. The method comprises forming a light emitting structure comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer and forming a mixed-period photonic crystal structure on the light emitting structure. And the forming of the mixed-period photonic crystal structure includes defining a first photonic crystal structure through a lithography process and a dry etching process, and forming a second photonic crystal structure through a wet etching process.
Abstract:
Provided are a light emitting device and a method of manufacturing the same. A light emitting device includes an active layer; a first conductive semiconductor layer on the active layer; a second conductive semiconductor layer on the active layer so that the active layer is disposed between the first and second conductive semiconductor layers; and a photonic crystal structure comprising a first light extraction pattern on the first conductive semiconductor layer having a first period, and second light extraction pattern on the first conductive semiconductor layer having a second period, the first period being greater than λ/n, and the second period being identical to or smaller than λ/n, where n is a refractive index of the first conductive semiconductor layer, and λ is a wavelength of light emitted from the active layer.
Abstract:
A light emitting device including a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a first photonic crystal structure on the light emitting structure; a lower encapsulant on the first photonic crystal structure; and a second photonic crystal structure on the lower encapsulant.
Abstract:
Disclosed are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes an electrode layer, a current density adjusting pattern on the electrode layer, and a light emitting structure on the electrode layer and the current density adjusting pattern. The light emitting structure includes a second conductive semiconductor layer, an active layer on the second conductive semiconductor layer, and a first conductive semiconductor layer on the active layer. The first conductive semiconductor layer includes an upper portion including a column pattern or a hole pattern serving as a structure of a resonant cavity and a lower portion having a thickness less than a thickness of the upper portion.
Abstract:
A light emitting device is provided. The light emitting device includes a reflective layer, a conductive dielectric layer on the reflective layer and a semiconductor layer including an active layer on the conductive dielectric layer. And a distance “d” between the reflective layer and a light emitting portion of the active layer corresponds to a constructive interference condition. And the conductive dielectric layer includes a lower conductive dielectric layer on the reflective layer; an intermediate layer on the lower conductive dielectric layer and an upper conductive dielectric layer on the intermediate layer.
Abstract:
Disclosed are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a substrate over the light emitting structure; a first reflective layer having a plurality of dielectric layers including a first dielectric layer having a first refractive index over the substrate, and a second dielectric layer having a second refractive index different from the first refractive index over the first dielectric layer; and a second reflective layer over the first reflective layer, the second reflective layer having a refractive index lower than the refractive index of each dielectric layer of the first reflective layer.
Abstract:
A terminal includes an image input unit, an image output unit, and a controller to transmit image frames generated by the image input unit to the image output unit in real time if a preview mode is activated. If an object is selected within an image displayed on the screen of the image output unit, the controller identifies the selected object, detects an image frame, in which an object matched to the identified object is present, processes the detected image frame, and transmits the processed image frame to the image output unit so that an image can be edited before the photographed image is recorded.
Abstract:
A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.
Abstract:
A light emitting device may include a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer. A first electrode including a plurality of openings may be provided on the light emitting structure. A filling factor, which is an area ratio of the first electrode relative to an area of a top surface of the light emitting structure, may be 20% or less.
Abstract:
Disclosed are a light emitting device package and a lighting system. The light emitting device package includes a semiconductor light emitting device, a first encapsulant over the semiconductor light emitting device, and a second encapsulant having a refractive index greater than a refractive index of the first encapsulant over the first encapsulant.