摘要:
Disclosed is a battery cell voltage measuring apparatus and method. The battery cell voltage measuring apparatus comprises a plurality of floating capacitors provided corresponding to a plurality of cells contained in a battery pack; a plurality of switching units provided corresponding to each cell of the battery pack and switchable into a charge mode or a measurement mode; and a cell voltage detector for measuring the voltage of each cell by switching each switching unit into a charge mode to charge the voltage of each cell on each corresponding floating capacitor and time-differentially switching each switching unit into a measurement mode to apply the cell voltage charged on the floating capacitor between a reference potential and a common cell voltage measuring line.
摘要:
A cell voltage measuring apparatus of a battery pack comprises a plurality of multiplexers connected corresponding to each cell group of the battery pack and operated to output a voltage signal of each cell in each cell group based on a reference potential applied from a corresponding cell group; a plurality of floating capacitors connected corresponding to each cell in each cell group and on which the voltage of each cell is charged and held; a switching means for enabling the voltage of each cell to be charged and held on each corresponding floating capacitor; and a controller for controlling the switching means per each cell group to enable the voltage of each cell to be charged and held on each corresponding floating capacitor and controlling each multiplexer to measure the cell voltage held on each floating capacitor of each cell group connected to each corresponding multiplexer.
摘要:
The energy distribution of exposure light directed passing through the slit of an exposure apparatus is determined. A photoresist layer on a substrate is exposed over a plurality of shots while changing the intensity of the exposure light for each shot. Then the photoresist layer is developed to form a sample photoresist layer. An image of the developed sample photoresist layer is analyzed for color intensity. Values of the color intensity across a selected one of the shots are correlated with values of the intensity of the exposure light to produce an energy distribution of the exposure light along the length of the slit. The energy distribution is used to change the slit so that a more desirable energy distribution may be realized when the slit is used in a process of manufacturing a semiconductor device.
摘要:
Provided is an apparatus for generating extreme ultraviolet light. The apparatus includes a collector mirror unit, a gas supply unit configured to supply a processing gas to the collector mirror unit, a gas supply nozzle arranged in at least one area of the collector mirror unit and configured to supply the processing gas to a surface of the collector mirror unit, and a controller configured to adjust a shape of a spray hole of the gas supply nozzle. The shape of the spray hole may be changed according to a control operation of the controller.
摘要:
A method of manufacturing a mask includes dividing an upper surface of a template having a design pattern into a plurality of regions, the template being arranged over a polymer layer on a mask substrate, correcting a distorted region among the regions, pressing the polymer layer with the template to form a mask pattern corresponding to the design pattern on the polymer layer; and curing the mask pattern.
摘要:
Provided is an apparatus for generating extreme ultraviolet light. The apparatus includes a collector mirror unit, a gas supply unit configured to supply a processing gas to the collector mirror unit, a gas supply nozzle arranged in at least one area of the collector mirror unit and configured to supply the processing gas to a surface of the collector mirror unit, and a controller configured to adjust a shape of a spray hole of the gas supply nozzle. The shape of the spray hole may be changed according to a control operation of the controller.
摘要:
A method of measuring an overlay of an object is provided. In the method, first information of a first structure may be obtained. A preliminary structure may be formed on the first structure. Second information of the preliminary structure may be obtained. The first information and the second information may be processed to obtain virtual information of a second structure that would be formed on the first structure if a process is performed on the preliminary structure. A virtual overlay between the first structure and the second structure may be measured using the virtual information.
摘要:
Provided are a reflective reticle chuck, a reflective illumination system including the chuck, a method of controlling the flatness of a reflective reticle using the chuck, and a method of manufacturing a semiconductor device using the chuck. The reflective reticle chuck includes a fixed portion and a mobile portion that together provide a securing surface for the reflective reticle. The mobile portion may alter a height of the securing surface relative to the fixed portion.
摘要:
The energy distribution of exposure light directed passing through the slit of an exposure apparatus is determined. A photoresist layer on a substrate is exposed over a plurality of shots while changing the intensity of the exposure light for each shot. Then the photoresist layer is developed to form a sample photoresist layer. An image of the developed sample photoresist layer is analyzed for color intensity. Values of the color intensity across a selected one of the shots are correlated with values of the intensity of the exposure light to produce an energy distribution of the exposure light along the length of the slit. The energy distribution is used to change the slit so that a more desirable energy distribution may be realized when the slit is used in a process of manufacturing a semiconductor device.
摘要:
A method of measuring an overlay of an object is provided. In the method, first information of a first structure may be obtained. A preliminary structure may be formed on the first structure. Second information of the preliminary structure may be obtained. The first information and the second information may be processed to obtain virtual information of a second structure that would be formed on the first structure if a process is performed on the preliminary structure. A virtual overlay between the first structure and the second structure may be measured using the virtual information.