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    TWO-STAGE OZONE CURE FOR DIELECTRIC FILMS
    1.
    发明申请
    TWO-STAGE OZONE CURE FOR DIELECTRIC FILMS 审中-公开
    用于电介质膜的两级氧化固化

    公开(公告)号：US20120238108A1

    公开(公告)日：2012-09-20

    申请号：US13227161

    申请日：2011-09-07

    申请人： Xiaolin Chen ,  Jingmei Liang ,  Nitin K. Ingle ,  Shankar Venkataraman

    发明人： Xiaolin Chen ,  Jingmei Liang ,  Nitin K. Ingle ,  Shankar Venkataraman

    IPC分类号： H01L21/316

    CPC分类号： H01L21/02164 ,  C23C16/345 ,  C23C16/56 ,  H01L21/02219 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/31111

    摘要： A method of forming a silicon oxide layer is described. The method increases the oxygen content of a dielectric layer by curing the layer in a two-step ozone cure. The first step involves exposing the dielectric layer to ozone while the second step involves exposing the dielectric layer to ozone excited by a local plasma. This sequence can reduce or eliminate the need for a subsequent anneal following the cure step. The two-step ozone cures may be applied to silicon-and-nitrogen-containing film to convert the films to silicon oxide.

    摘要翻译： 描述形成氧化硅层的方法。 该方法通过在两步臭氧固化中固化该层来增加电介质层的氧含量。 第一步涉及将介电层暴露于臭氧，而第二步涉及将电介质层暴露于由局部等离子体激发的臭氧。 该顺序可以减少或消除在固化步骤之后的后续退火的需要。 两步臭氧治疗可以应用于含硅和氮的膜以将膜转化为氧化硅。

    SURFACE TREATMENT AND DEPOSITION FOR REDUCED OUTGASSING
    3.
    发明申请
    SURFACE TREATMENT AND DEPOSITION FOR REDUCED OUTGASSING 有权
    表面处理和沉积减少出口

    公开(公告)号：US20130149462A1

    公开(公告)日：2013-06-13

    申请号：US13494341

    申请日：2012-06-12

    申请人： Jingmei Liang ,  Xiaolin Chen ,  Nitin K. Ingle ,  Shankar Venkataraman

    发明人： Jingmei Liang ,  Xiaolin Chen ,  Nitin K. Ingle ,  Shankar Venkataraman

    IPC分类号： C23C16/40

    CPC分类号： C23C16/401 ,  C23C16/345 ,  C23C16/452 ,  C23C16/45514 ,  C23C16/45565 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02274

    摘要： A method of forming a dielectric layer is described. The method first deposits a silicon-nitrogen-and-hydrogen-containing (polysilazane) layer by radical-component chemical vapor deposition (CVD). The silicon-nitrogen-and-hydrogen-containing layer is formed by combining a radical precursor (excited in a remote plasma) with an unexcited carbon-free silicon precursor. A silicon oxide capping layer may be formed from a portion of the carbon-free silicon-nitrogen-and-hydrogen-containing layer to avoid time-evolution of underlying layer properties prior to conversion into silicon oxide. Alternatively, the silicon oxide capping layer is formed over the silicon-nitrogen-and-hydrogen-containing layer. Either method of formation involves the formation of a local plasma within the substrate processing region.

    摘要翻译： 描述形成电介质层的方法。 该方法首先通过自由基组分化学气相沉积（CVD）沉积含硅氮和氢的（聚硅氮烷）层。 通过将自由基前体（在远程等离子体中激发）与未煅烧的无碳硅前体组合而形成含硅和氮的层。 氧化硅覆盖层可以由一部分无碳硅 - 含氮和氢的层形成，以避免在转化成氧化硅之前下层性质的时间演变。 或者，氧化硅覆盖层形成在含硅 - 氮和氢的层之上。 任一种形成方法都涉及在衬底处理区域内形成局部等离子体。

    Stress management for tensile films
    6.
    发明授权
    Stress management for tensile films 有权
    拉伸薄膜的应力管理

    公开(公告)号：US07935643B2

    公开(公告)日：2011-05-03

    申请号：US12604332

    申请日：2009-10-22

    申请人： Jingmei Liang ,  Anjana M. Patel ,  Nitin K. Ingle ,  Shankar Venkataraman

    发明人： Jingmei Liang ,  Anjana M. Patel ,  Nitin K. Ingle ,  Shankar Venkataraman

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： H01L21/31608 ,  C23C16/401 ,  C23C16/452 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02326 ,  H01L21/02362 ,  H01L21/3185 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76837

    摘要： The formation of a gap-filling silicon oxide layer with reduced tendency towards cracking is described. The deposition involves the formation of a flowable silicon-containing layer which facilitates the filling of trenches. Subsequent processing at high substrate temperature causes less cracking in the dielectric film than flowable films formed in accordance with methods in the prior art. A compressive liner layer deposited prior to the formation of the gap-filling silicon oxide layer is described and reduces the tendency for the subsequently deposited film to crack. A compressive capping layer deposited after a flowable silicon-containing layer has also been determined to reduce cracking. Compressive liner layers and compressive capping layers can be used alone or in combination to reduce and often eliminate cracking. Compressive capping layers in disclosed embodiments have additionally been determined to enable an underlying layer of silicon nitride to be transformed into a silicon oxide layer.

    摘要翻译： 描述了具有降低的开裂倾向的间隙填充氧化硅层的形成。 沉积涉及形成有助于填充沟槽的可流动的含硅层。 在基板温度高的情况下，与根据现有技术中的方法形成的可流动膜相比，电介质膜中的裂纹少。 描述在形成间隙填充氧化硅层之前沉积的压缩衬垫层，并且降低随后沉积的膜破裂的倾向。 在可流动的含硅层之后沉积的压缩覆盖层也被确定以减少开裂。 压缩衬里层和压缩覆盖层可以单独使用或组合使用以减少并经常消除开裂。 已经确定了所公开的实施例中的压缩覆盖层，以使氮化硅的下层能够转变成氧化硅层。

    Post-planarization densification
    8.
    发明授权
    Post-planarization densification 失效
    后平面化致密化

    公开(公告)号：US08329587B2

    公开(公告)日：2012-12-11

    申请号：US12787791

    申请日：2010-05-26

    申请人： Jingmei Liang ,  Nitin K. Ingle ,  Shankar Venkataraman

    发明人： Jingmei Liang ,  Nitin K. Ingle ,  Shankar Venkataraman

    IPC分类号： H01L21/311

    CPC分类号： H01L21/3105 ,  C23C16/345 ,  C23C16/452 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02337 ,  H01L21/31055 ,  H01L21/316 ,  H01L21/67207 ,  H01L21/76229

    摘要： Processes for forming high density gap-filling silicon oxide on a patterned substrate are described. The processes increase the density of gap-filling silicon oxide particularly in narrow trenches. The density may also be increased in wide trenches and recessed open areas. The densities of the gap-filling silicon oxide in the narrow and wide trenches/open areas become more similar following the treatment which allows the etch rates to match more closely. This effect may also be described as a reduction in the pattern loading effect. The process involves forming then planarizing silicon oxide. Planarization exposes a new dielectric interface disposed closer to the narrow trenches. The newly exposed interface facilitates a densification treatment by annealing and/or exposing the planarized surface to a plasma.

    摘要翻译： 描述了在图案化衬底上形成高密度间隙填充氧化硅的工艺。 这些工艺增加了间隙填充氧化硅的密度，特别是在狭窄的沟槽中。 在宽的沟槽和凹入的开放区域中，密度也可以增加。 狭缝和宽沟槽/开放区域中填充间隙的氧化硅的密度在处理之后变得更加相似，这允许蚀刻速率更紧密地匹配。 这种效果也可以被描述为模式加载效应的降低。 该方法涉及形成二氧化硅平坦化。 平面化暴露出更靠近窄沟槽设置的新介质界面。 新暴露的界面通过将平坦化表面退火和/或暴露于等离子体来促进致密化处理。

    POST-PLANARIZATION DENSIFICATION
    9.
    发明申请
    POST-PLANARIZATION DENSIFICATION 有权
    后期平面化差异

    公开(公告)号：US20110212620A1

    公开(公告)日：2011-09-01

    申请号：US13043131

    申请日：2011-03-08

    申请人： Jingmei Liang ,  Nitin K. Ingle ,  Shankar Venkataraman

    发明人： Jingmei Liang ,  Nitin K. Ingle ,  Shankar Venkataraman

    IPC分类号： H01L21/306

    CPC分类号： H01L21/02164 ,  H01L21/02337 ,  H01L21/3105 ,  H01L21/31055 ,  H01L21/316 ,  H01L21/76229

    摘要： Processes for forming high density gap-filling silicon oxide on a patterned substrate are described. The processes increase the density of gap-filling silicon oxide particularly in narrow trenches. The density may also be increased in wide trenches and recessed open areas. The densities of the gap-filling silicon oxide in the narrow and wide trenches/open areas become more similar following the treatment which allows the etch rates to match more closely. This effect may also be described as a reduction in the pattern loading effect. The process involves forming then planarizing silicon oxide. Planarization exposes a new dielectric interface disposed closer to the narrow trenches. The newly exposed interface facilitates a densification treatment by annealing and/or exposing the planarized surface to a plasma.

    摘要翻译： 描述了在图案化衬底上形成高密度间隙填充氧化硅的工艺。 这些工艺增加了间隙填充氧化硅的密度，特别是在狭窄的沟槽中。 在宽的沟槽和凹入的开放区域中，密度也可以增加。 狭缝和宽沟槽/开放区域中填充间隙的氧化硅的密度在处理之后变得更加相似，这允许蚀刻速率更紧密地匹配。 这种效果也可以被描述为模式加载效应的降低。 该方法涉及形成二氧化硅平坦化。 平面化暴露出更靠近窄沟槽设置的新介质界面。 新暴露的界面通过将平坦化表面退火和/或暴露于等离子体来促进致密化处理。