公开(公告)号：US07270884B2

公开(公告)日：2007-09-18

申请号：US10408339

申请日：2003-04-07

申请人： Jingyu Lian ,  Kwong Hon Wong ,  Michael Wise ,  Young Limb ,  Nicolas Nagel

发明人： Jingyu Lian ,  Kwong Hon Wong ,  Michael Wise ,  Young Limb ,  Nicolas Nagel

IPC分类号： B32B9/06

CPC分类号： H01L28/65 ,  Y10T428/12597 ,  Y10T428/12875

摘要： Si, Al, Al plus TiN, and IrO2 are used as adhesion layers to prevent peeling of noble metal electrodes, such as Pt, from a silicon dioxide (SiO2) substrate in capacitor structures of memory devices.

摘要翻译： 使用Si，Al，Al，TiN和IrO 2作为粘合层，以防止诸如Pt的贵金属电极从存储器件的电容器结构中的二氧化硅（SiO 2）衬底剥离。

公开(公告)号：US5268590A

公开(公告)日：1993-12-07

申请号：US958583

申请日：1992-10-08

申请人： James R. Pfiester ,  Thomas C. Mele ,  Young Limb

发明人： James R. Pfiester ,  Thomas C. Mele ,  Young Limb

IPC分类号： H01L21/336 ,  H01L21/768 ,  H01L21/8238 ,  H01L27/092 ,  H01L27/02

CPC分类号： H01L29/665 ,  H01L21/76885 ,  H01L21/8238 ,  H01L27/092 ,  Y10S257/915

摘要： A CMOS device and a method for its fabrication are disclosed. In one embodiment the CMOS device includes an NMOS transistor and a PMOS transistor each of which has silicided source and drain regions and a silicon gate electrode which includes a titanium nitride barrier layer. The NMOS transistor and PMOS transistors are coupled together by a silicon layer which is capped by a layer of titanium nitride barrier material. The source and drain regions are silicided with cobalt or other metal silicide which is prevented from reacting with the silicon gate electrode and interconnect by the presence of the titanium nitride barrier layer.

摘要翻译： 公开了一种CMOS器件及其制造方法。 在一个实施例中，CMOS器件包括NMOS晶体管和PMOS晶体管，每个NMOS晶体管和PMOS晶体管都具有硅化源极和漏极区域，以及包括氮化钛阻挡层的硅栅电极。 NMOS晶体管和PMOS晶体管通过由氮化钛屏障材料层覆盖的硅层耦合在一起。 源极和漏极区域被钴或其它金属硅化物硅化，其被防止与硅栅电极反应并且通过存在氮化钛阻挡层而互连。

公开(公告)号：US5352615A

公开(公告)日：1994-10-04

申请号：US185351

申请日：1994-01-24

申请人： Young Limb ,  Philip J. Tobin

发明人： Young Limb ,  Philip J. Tobin

IPC分类号： C30B33/00 ,  H01L21/00 ,  H01L21/322 ,  H01L21/306

CPC分类号： H01L21/67115 ,  C30B33/00 ,  H01L21/3225 ,  Y10S148/06

摘要： A semiconductor substrate is denuded using a reducing gas mixture including carbon monoxide and carbon dioxide. Use of the reducing gas mixture allows very low oxygen partial pressure to be achieved in a furnace tube during the step of denuding. Oxygen partial pressure lower than 1E-9 atmosphere may be achieved by adjusting the relative ratio of carbon monoxide and carbon dioxide. Precipitates are grown after forming nucleating sites. Both CZ and FZ substrates may use the process, and the process can be used with silicon, germanium, or other semiconductor materials.

摘要翻译： 使用包括一氧化碳和二氧化碳的还原气体混合物来剥蚀半导体衬底。 使用还原气体混合物允许在剥离步骤期间在炉管中实现非常低的氧分压。 低于1E-9气氛的氧气分压可以通过调节一氧化碳和二氧化碳的相对比例来实现。 沉淀物在形成成核位点后生长。 CZ和FZ基板都可以使用该工艺，该工艺可以与硅，锗或其他半导体材料一起使用。

公开(公告)号：US4987102A

公开(公告)日：1991-01-22

申请号：US445220

申请日：1989-12-04

申请人： Bich-Yen Nguyen ,  Jen-Jiang Lee ,  Hoang K. Nguyen ,  Young Limb ,  Philip J. Tobin

发明人： Bich-Yen Nguyen ,  Jen-Jiang Lee ,  Hoang K. Nguyen ,  Young Limb ,  Philip J. Tobin

IPC分类号： H01L21/31 ,  H01L21/316 ,  H01L21/318

CPC分类号： H01L21/02164 ,  H01L21/02129 ,  H01L21/0217 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/022 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/318 ,  H01L21/3185

摘要： A method is described for the formation of high purity thin films on a semiconductor substrate. In the preferred embodiment of the invention a thin film is formed on a semiconductor substrate in a plasma enhanced chemical vapor deposition system. Energized silicon ions are obtained by mass analysis and are accelerated into a hydrogen-free plasma. A reaction occurs between energized atoms within the plasma and the energized silicon ions resulting in the deposition of a thin film on the semiconductor substrate.

公开(公告)号：US06214661B1

公开(公告)日：2001-04-10

申请号：US09489771

申请日：2000-01-21

申请人： Heon Lee ,  Young-Jin Park ,  Young Limb ,  Brian Lee ,  Kilho Lee ,  Satish Athavale ,  Jai-hoon Sim

发明人： Heon Lee ,  Young-Jin Park ,  Young Limb ,  Brian Lee ,  Kilho Lee ,  Satish Athavale ,  Jai-hoon Sim

IPC分类号： H01L218242

CPC分类号： H01L28/75 ,  H01L27/10852 ,  H01L28/55

摘要： In a method of forming a microelectronic structure of a Pt/BSTO/Pt capacitor stack for use in a DRAM device, the improvement comprising substantially eliminating or preventing oxygen out-diffusion from the BSTO material layer, comprising: a) preparing a bottom Pt electrode formation; b) subjecting the bottom Pt electrode formation to an oxygen plasma treatment to form an oxygen enriched Pt layer on the bottom Pt electrode; c) depositing a BSTO layer on said oxygen enriched Pt layer; d) depositing an upper Pt electrode layer on the BSTO layer; e) subjecting the upper Pt electrode layer to an oxygen plasma treatment to form an oxygen incorporated Pt layer; and f) depositing a Pt layer on the oxygen incorporated Pt layer upper Pt elect.

摘要翻译： 在形成用于DRAM器件的Pt / BSTO / Pt电容器堆叠的微电子结构的方法中，改进包括基本上消除或防止BSTO材料层的氧扩散，包括：a）制备底部Pt电极 b）使底Pt层电极形成氧气等离子体处理，在底Pt电极上形成富氧Pt层; c）在所述富氧Pt层上沉积BSTO层; d）将上Pt电极层沉积在 BSTO层; e）使上Pt电极层进行氧等离子体处理以形成掺入氧的Pt层; 以及）在配有氧的Pt层上部Pt上沉积Pt层。

公开(公告)号：US5300187A

公开(公告)日：1994-04-05

申请号：US940108

申请日：1992-09-03

申请人： Israel A. Lesk ,  Young Limb ,  Philip J. Tobin ,  John Franka ,  Paul T. Lin ,  Jonathan C. Dahm ,  Gary L. Huffman ,  Bich-Yen Nguyen

发明人： Israel A. Lesk ,  Young Limb ,  Philip J. Tobin ,  John Franka ,  Paul T. Lin ,  Jonathan C. Dahm ,  Gary L. Huffman ,  Bich-Yen Nguyen

IPC分类号： H01L21/306 ,  B44C1/22

CPC分类号： H01L21/02046 ,  Y10S438/906

摘要： Contaminants are removed from a semiconductor material by heating the semiconductor material to temperature within the range of a minimum temperature where a halogen compound will decompose to halogen atoms without the use of ultraviolet irradiation and react with contaminants present on the semiconductor material and a maximum temperature of 800.degree. C., wherein less than or equal to approximately 50 Angstroms of oxide is formed on the semiconductor material. The ambient in which the semiconductor material is heated is an ambient comprised of a nonreactive gas and a halogen compound for at least a time sufficient to remove a substantial amount of contaminants from the semiconductor material.

摘要翻译： 通过将半导体材料加热到卤素化合物将分解成卤素原子的最低温度的范围内的温度而不使用紫外线照射并与存在于半导体材料上的污染物反应并且与半导体材料的最高温度 800℃，其中在半导体材料上形成小于或等于约50埃的氧化物。 其中半导体材料被加热的环境是由非反应性气体和卤素化合物组成的环境，其至少足以从半导体材料中除去大量污染物的时间。