公开(公告)号：US06979579B1

公开(公告)日：2005-12-27

申请号：US10813913

申请日：2004-03-30

申请人： Jisoo Kim ,  Sangheon Lee ,  Sean Kang ,  Binet Worsham ,  Bi-Ming Yen ,  Reza Sadjadi ,  Peter K. Loewenhardt

发明人： Jisoo Kim ,  Sangheon Lee ,  Sean Kang ,  Binet Worsham ,  Bi-Ming Yen ,  Reza Sadjadi ,  Peter K. Loewenhardt

IPC分类号： G01B21/00 ,  H01J9/42 ,  H01L21/00 ,  H01L21/66

CPC分类号： H01J9/42 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a plasma processing system, a method of inspecting a contact opening of a contact formed in a first layer of the substrate to determine whether the contact reaches a metal layer that is disposed below the first layer is shown. The method includes flowing a gas mixture into a plasma reactor of the plasma processing system, the gas mixture comprising a flow of a chlorine containing gas. The method also includes striking a plasma from the gas mixture; and exposing the contact to the plasma. The method further includes detecting whether metal chloride is present in the contact opening after the exposing.

摘要翻译： 在等离子体处理系统中，示出了检查形成在基板的第一层中的接点的接触开口以确定接触是否到达设置在第一层下方的金属层的方法。 该方法包括将气体混合物流入等离子体处理系统的等离子体反应器，气体混合物包含含氯气体的流。 该方法还包括从气体混合物中冲击等离子体; 并将接触点暴露于等离子体。 该方法还包括在曝光后检测接触孔中是否存在金属氯化物。

公开(公告)号：US07632375B2

公开(公告)日：2009-12-15

申请号：US11024978

申请日：2004-12-30

申请人： Andras Kuthi ,  Jisoo Kim ,  Eric Lenz ,  Rajindar Dhindsa ,  Lumin Li ,  Reza Sadjadi

发明人： Andras Kuthi ,  Jisoo Kim ,  Eric Lenz ,  Rajindar Dhindsa ,  Lumin Li ,  Reza Sadjadi

IPC分类号： C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32623 ,  Y10S156/915

摘要： A vacuum plasma processor includes a chamber having a grounded wall and an outlet port. Plasma is excited at a first RF frequency in a chamber region spaced from the wall and outlet port. A structure confines the plasma to the region while enabling gas to flow from the region to the outlet port. RF electric power at a second frequency connected to the confining structure causes the confining structure to be at a potential different from ground to increase the size of a sheath between the plasma and confining structure and increase the confining structure effectiveness. The region includes an electrode connected to ground by a circuit that is series resonant to the first frequency and includes capacitance of the sheath.

摘要翻译： 真空等离子体处理器包括具有接地壁和出口的室。 等离子体在与壁和出口间隔开的室区域中以第一RF频率激发。 结构将等离子体限制在该区域上，同时使气体能够从该区域流出到出口。 连接到限制结构的第二频率的RF电力使得限制结构处于不同于地面的电位，以增加等离子体和限制结构之间的护套尺寸，并增加限制结构的有效性。 该区域包括通过与第一频率串联谐振并包括护套的电容的电路连接到地的电极。

公开(公告)号：US20090165954A1

公开(公告)日：2009-07-02

申请号：US11024978

申请日：2004-12-30

申请人： Andras Kuthi ,  Jisoo Kim ,  Eric Lenz ,  Rajindar Dhindsa ,  Lumin Li ,  Reza Sadjadi

发明人： Andras Kuthi ,  Jisoo Kim ,  Eric Lenz ,  Rajindar Dhindsa ,  Lumin Li ,  Reza Sadjadi

IPC分类号： H01L21/306 ,  C23F1/08 ,  C23C16/54

CPC分类号： H01J37/32623 ,  Y10S156/915

摘要： A vacuum plasma processor includes a chamber having a grounded wall and an outlet port. Plasma is excited at a first RF frequency in a chamber region spaced from the wall and outlet port. A. structure confines the plasma to the region while enabling gas to flow from the region to the outlet port. RF electric power at a second frequency connected to the confining structure causes the confining structure to be at a potential different from ground to increase the size of a sheath between the plasma and confining structure and increase the confining structure effectiveness. The region includes an electrode connected to ground by a circuit that is series resonant to the first frequency and includes capacitance of the sheath.

摘要翻译： 真空等离子体处理器包括具有接地壁和出口的室。 等离子体在与壁和出口间隔开的室区域中以第一RF频率激发。 A.结构将等离子体限制在该区域上，同时使气体能够从该区域流出到出口。 连接到限制结构的第二频率的RF电力使得限制结构处于不同于地面的电位，以增加等离子体和限制结构之间的护套尺寸，并增加限制结构的有效性。 该区域包括通过与第一频率串联谐振并包括护套的电容的电路连接到地的电极。

公开(公告)号：US07294580B2

公开(公告)日：2007-11-13

申请号：US10860833

申请日：2004-06-03

申请人： Seokmin Yun ,  Ji Zhu ,  Peter Cirigliano ,  Sangheon Lee ,  Thomas S. Choi ,  Peter Loewenhardt ,  Mark H. Wilcoxson ,  Reza Sadjadi ,  Eric A. Hudson ,  James V. Tietz

发明人： Seokmin Yun ,  Ji Zhu ,  Peter Cirigliano ,  Sangheon Lee ,  Thomas S. Choi ,  Peter Loewenhardt ,  Mark H. Wilcoxson ,  Reza Sadjadi ,  Eric A. Hudson ,  James V. Tietz

IPC分类号： H01L21/00

CPC分类号： H01L21/31116 ,  H01L21/31138 ,  H01L21/76802 ,  H01L21/76829

摘要： A method for etching a feature in a low-k dielectric layer through a photoresist etch mask over a substrate. A gas-modulated cyclic stripping process is performed for more than three cycles for stripping a single photoresist mask. Each cycle of the gas-modulated cyclic stripping process comprises performing a protective layer formation phase and a stripping phase. The protective layer forming phase using first gas chemistry with a deposition gas chemistry, wherein the protective layer forming phase is performed in about 0.005 to 10 seconds for each cycle. The performing the stripping phase for stripping the photoresist mask using a second gas chemistry using a stripping gas chemistry, where the first gas chemistry is different than the second gas chemistry, wherein the etching phase is performed in about 0.005 to 10 seconds for each cycle.

摘要翻译： 一种通过光刻胶蚀刻掩模在衬底上蚀刻低k电介质层中的特征的方法。 执行气体调制的循环剥离工艺超过三个循环以剥离单个光致抗蚀剂掩模。 气体调节循环汽提过程的每个循环包括进行保护层形成阶段和汽提阶段。 使用具有沉积气化学性质的第一气体化学物质的保护层形成阶段，其中保护层形成阶段在每个循环中以约0.005至10秒钟进行。 使用第二种气体化学法，使用剥离气体化学法，其中第一种气体化学物质与第二种气体化学物质不同，进行汽提阶段以剥离光致抗蚀剂掩模，其中每个循环在约0.005至10秒内进行蚀刻阶段。

公开(公告)号：US07192531B1

公开(公告)日：2007-03-20

申请号：US10603412

申请日：2003-06-24

申请人： Sean S. Kang ,  Sangheon Lee ,  Wan-Lin Chen ,  Eric A. Hudson ,  Reza Sadjadi

发明人： Sean S. Kang ,  Sangheon Lee ,  Wan-Lin Chen ,  Eric A. Hudson ,  Reza Sadjadi

IPC分类号： H01L21/302

CPC分类号： H01L21/76808 ,  H01L21/31138

摘要： A method for forming damascene features in a dielectric layer over a barrier layer over a substrate is provided. A plurality of vias are etched in the dielectric layer to the barrier layer with a plasma etching process in the plasma processing chamber. A patterned photoresist layer is formed with a trench pattern. Within a single plasma process chamber a combination via plug deposition to form plugs in the vias over the barrier layer and trench etch is provided.

摘要翻译： 提供了一种用于在衬底上的阻挡层上的介电层中形成镶嵌特征的方法。 在等离子体处理室中通过等离子体蚀刻工艺将多个通孔在电介质层中蚀刻到阻挡层。 形成具有沟槽图案的图案化的光致抗蚀剂层。 在单个等离子体处理室内，提供了通过插塞沉积的组合以在阻挡层上的通孔中形成插塞和沟槽蚀刻。

公开(公告)号：US07838086B2

公开(公告)日：2010-11-23

申请号：US12252887

申请日：2008-10-16

申请人： Douglas L. Keil ,  Lumin Li ,  Eric A. Hudson ,  Reza Sadjadi ,  Eric H. Lenz ,  Rajinder Dhindsa ,  Ji Soo Kim

发明人： Douglas L. Keil ,  Lumin Li ,  Eric A. Hudson ,  Reza Sadjadi ,  Eric H. Lenz ,  Rajinder Dhindsa ,  Ji Soo Kim

IPC分类号： H05H1/02 ,  C23C16/00

CPC分类号： H01J37/3266 ,  H01J37/32431 ,  H01J37/32623

摘要： A method for processing a substrate is provided. The substrate is placed in a process chamber. A gas is provided from a gas source to the process chamber. A plasma is generated from the gas in the process chamber. The gas flows through a gap adjacent to at least one confinement ring to provide physical confinement of the plasma. Magnetic confinement of the plasma is provided to enhance the physical confinement of the plasma.

摘要翻译： 提供了一种处理基板的方法。 将基板放置在处理室中。 从气体源向处理室提供气体。 从处理室中的气体产生等离子体。 气体流过与至少一个限制环相邻的间隙，以提供等离子体的物理限制。 提供等离子体的磁限制以增强等离子体的物理限制。

公开(公告)号：US20050241763A1

公开(公告)日：2005-11-03

申请号：US10835175

申请日：2004-04-30

申请人： Zhisong Huang ,  Jose Sam ,  Eric Lenz ,  Rajinder Dhindsa ,  Reza Sadjadi

发明人： Zhisong Huang ,  Jose Sam ,  Eric Lenz ,  Rajinder Dhindsa ,  Reza Sadjadi

IPC分类号： H01L21/306

CPC分类号： C23C16/45561 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449

摘要： A gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus is provided. The gas distribution system can include a gas supply section, a flow control section and a switching section. The gas supply section provides first and second gases, typically gas mixtures, to the flow control section, which controls the flows of the first and second gases to the chamber. The chamber can include multiple zones, and the flow control section can supply the first and second gases to the multiple zones at desired flow ratios of the gases. The gas distribution system can continuously supply the first and second gases to the switching section and the switching section is operable to switch the flows of the first and second gases, such that one of the first and second process gases is supplied to the chamber while the other of the first and second gases is supplied to a by-pass line, and then to switch the gas flows. The switching section preferably includes fast switching valves operable to quickly open and close to allow fast switching of the first and second gases, preferably without the occurrence of undesirable pressure surges or flow instabilities in the flow of either gas.

摘要翻译： 提供了一种用于将诸如等离子体处理装置的等离子体处理室之类的不同气体成分供应到腔室的气体分配系统。 气体分配系统可以包括气体供应部分，流量控制部分和切换部分。 气体供应部分将第一和第二气体（通常为气体混合物）提供给流量控制部分，该控制部分控制第一和第二气体流到室的流动。 腔室可以包括多个区域，并且流量控制部分可以以期望的气体流量比将第一和第二气体供应到多个区域。 气体分配系统可以将第一和第二气体连续地供应到切换部分，并且切换部分可操作地切换第一和第二气体的流动，使得第一和第二处理气体中的一个被供应到腔室，而 第一和第二气体中的另一个被供应到旁路管线，然后切换气体流。 切换部分优选地包括快速切换阀，其可操作以快速打开和关闭，以允许第一和第二气体的快速切换，优选地，在任一气体的流动中不发生不期望的压力波动或流动不稳定性。

公开(公告)号：US06518174B2

公开(公告)日：2003-02-11

申请号：US09746894

申请日：2000-12-22

申请人： Rao Annapragada ,  Reza Sadjadi

发明人： Rao Annapragada ,  Reza Sadjadi

IPC分类号： H01L214763

CPC分类号： H01L21/31116 ,  H01L21/31138 ,  H01L21/76807

摘要： A method of etching a stack is provided. Generally, a trench patterned resist layer is placed over a dielectric layer of the stack. A trench is partially etched into the dielectric layer. A simultaneous stripping of the trench patterned resist layer, etching the barrier layer, and etching the trench is then performed. As a result an etch stack may be provided with less damage. The method may be used to provide a dual damascene structure. The dual damascene structure may be provided by etching a via before placing the trench patterned resist layer over the dielectric layer of the stack.

公开(公告)号：US08673785B2

公开(公告)日：2014-03-18

申请号：US12716918

申请日：2010-03-03

申请人： Zhisong Huang ,  Jose Tong Sam ,  Eric H. Lenz ,  Rajinder Dhindsa ,  Reza Sadjadi

发明人： Zhisong Huang ,  Jose Tong Sam ,  Eric H. Lenz ,  Rajinder Dhindsa ,  Reza Sadjadi

IPC分类号： H01L21/311 ,  H01L21/302 ,  H01L21/461 ,  B44C1/22 ,  C03C15/00

CPC分类号： C23C16/45561 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449

摘要： A gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus is provided. The gas distribution system can include a gas supply section, a flow control section and a switching section. The gas supply section provides first and second gases, typically gas mixtures, to the flow control section, which controls the flows of the first and second gases to the chamber. The chamber can include multiple zones, and the flow control section can supply the first and second gases to the multiple zones at desired flow ratios of the gases. The gas distribution system can continuously supply the first and second gases to the switching section and the switching section is operable to switch the flows of the first and second gases, such that one of the first and second process gases is supplied to the chamber while the other of the first and second gases is supplied to a by-pass line, and then to switch the gas flows. The switching section preferably includes fast switching valves operable to quickly open and close to allow fast switching of the first and second gases, preferably without the occurrence of undesirable pressure surges or flow instabilities in the flow of either gas.

摘要翻译： 提供了一种用于将诸如等离子体处理装置的等离子体处理室之类的不同气体成分供应到腔室的气体分配系统。 气体分配系统可以包括气体供应部分，流量控制部分和切换部分。 气体供应部分将第一和第二气体（通常为气体混合物）提供给流量控制部分，该控制部分控制第一和第二气体流到室的流动。 腔室可以包括多个区域，并且流量控制部分可以以期望的气体流量比将第一和第二气体供应到多个区域。 气体分配系统可以将第一和第二气体连续地供应到切换部分，并且切换部分可操作地切换第一和第二气体的流动，使得第一和第二处理气体中的一个被供应到腔室，而 第一和第二气体中的另一个被供应到旁路管线，然后切换气体流。 切换部分优选地包括快速切换阀，其可操作以快速打开和关闭，以允许第一和第二气体的快速切换，优选地，在任一气体的流动中不发生不期望的压力波动或流动不稳定性。

公开(公告)号：US20100159707A1

公开(公告)日：2010-06-24

申请号：US12716918

申请日：2010-03-03

申请人： Zhisong Huang ,  Jose Tong Sam ,  Eric H. Lenz ,  Rajinder Dhindsa ,  Reza Sadjadi

发明人： Zhisong Huang ,  Jose Tong Sam ,  Eric H. Lenz ,  Rajinder Dhindsa ,  Reza Sadjadi

IPC分类号： H01L21/3065 ,  H01L21/312

CPC分类号： C23C16/45561 ,  C23C16/45565 ,  H01J37/3244 ,  H01J37/32449

摘要： A gas distribution system for supplying different gas compositions to a chamber, such as a plasma processing chamber of a plasma processing apparatus is provided. The gas distribution system can include a gas supply section, a flow control section and a switching section. The gas supply section provides first and second gases, typically gas mixtures, to the flow control section, which controls the flows of the first and second gases to the chamber. The chamber can include multiple zones, and the flow control section can supply the first and second gases to the multiple zones at desired flow ratios of the gases. The gas distribution system can continuously supply the first and second gases to the switching section and the switching section is operable to switch the flows of the first and second gases, such that one of the first and second process gases is supplied to the chamber while the other of the first and second gases is supplied to a by-pass line, and then to switch the gas flows. The switching section preferably includes fast switching valves operable to quickly open and close to allow fast switching of the first and second gases, preferably without the occurrence of undesirable pressure surges or flow instabilities in the flow of either gas.

摘要翻译： 提供了一种用于将诸如等离子体处理装置的等离子体处理室之类的不同气体成分供应到腔室的气体分配系统。 气体分配系统可以包括气体供应部分，流量控制部分和切换部分。 气体供应部分将第一和第二气体（通常为气体混合物）提供给流量控制部分，该控制部分控制第一和第二气体流到室的流动。 腔室可以包括多个区域，并且流量控制部分可以以期望的气体流量比将第一和第二气体供应到多个区域。 气体分配系统可以将第一和第二气体连续地供应到切换部分，并且切换部分可操作地切换第一和第二气体的流动，使得第一和第二处理气体中的一个被供应到腔室，而 第一和第二气体中的另一个被供应到旁路管线，然后切换气体流。 切换部分优选地包括快速切换阀，其可操作以快速打开和关闭，以允许第一和第二气体的快速切换，优选地，在任一气体的流动中不发生不期望的压力波动或流动不稳定性。