公开(公告)号：US20130341738A1

公开(公告)日：2013-12-26

申请号：US13921419

申请日：2013-06-19

申请人： Jochen REINMUTH ,  Jens FREY ,  Yvonne BERGMANN

发明人： Jochen REINMUTH ,  Jens FREY ,  Yvonne BERGMANN

IPC分类号： B81C1/00 ,  B81B3/00

CPC分类号： B81C1/00134 ,  B81B3/0018 ,  B81B7/007 ,  B81B2207/095

摘要： A method for manufacturing a component having an electrical through-connection includes: providing a semiconductor substrate having a front side and a back side opposite from the front side; producing, on the front side of the semiconductor substrate, an insulating trench which annularly surrounds a contact area; introducing an insulating material into the insulating trench; producing a contact hole on the front side of the semiconductor substrate by removing the semiconductor material surrounded by the insulating trench in the contact area; and depositing a metallic material in the contact hole.

摘要翻译： 一种用于制造具有电穿通连接的部件的方法包括：提供具有前侧和与前侧相对的后侧的半导体衬底; 在所述半导体衬底的前侧产生环形地围绕接触区域的绝缘沟槽; 将绝缘材料引入绝缘沟槽中; 通过去除由接触区域中的绝缘沟槽围绕的半导体材料，在半导体衬底的正面上产生接触孔; 以及在所述接触孔中沉积金属材料。

公开(公告)号：US20130209672A1

公开(公告)日：2013-08-15

申请号：US13763223

申请日：2013-02-08

申请人： Jochen REINMUTH ,  Frank SCHNELL ,  Heribert WEBER ,  Erhard HIRTH ,  Yvonne BERGMANN

发明人： Jochen REINMUTH ,  Frank SCHNELL ,  Heribert WEBER ,  Erhard HIRTH ,  Yvonne BERGMANN

IPC分类号： H05K3/00

CPC分类号： H05K3/0094 ,  B81B2201/0235 ,  B81B2207/096 ,  B81C1/00301 ,  H01L21/743 ,  H01L21/76898 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05548 ,  H01L2924/1461 ,  H05K3/4061 ,  H05K2201/09563 ,  H01L2924/00

摘要： A method for manufacturing a component having a through-connection. The method includes providing a semiconductor substrate, forming a recess in the semiconductor substrate, and introducing into the recess a pourable starting material which has a metal. The method furthermore includes carrying out a heating process, an electrically conductive structure forming the through-connection being developed from the pourable starting material.

摘要翻译： 一种用于制造具有通过连接的部件的方法。 该方法包括提供半导体衬底，在半导体衬底中形成凹陷，并将具有金属的可倾倒起始材料引入凹槽中。 该方法还包括进行加热过程，形成从可倾倒起始材料形成的贯通连接的导电结构。

公开(公告)号：US20140027927A1

公开(公告)日：2014-01-30

申请号：US13923035

申请日：2013-06-20

申请人： Jochen REINMUTH ,  Jens FREY ,  Yvonne BERGMANN

发明人： Jochen REINMUTH ,  Jens FREY ,  Yvonne BERGMANN

IPC分类号： H01L23/48 ,  H01L21/762

CPC分类号： H01L21/76224 ,  B81B7/007 ,  B81B2207/096 ,  B81C1/00095 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/02 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L2224/02311 ,  H01L2224/05009 ,  H01L2224/29111 ,  H01L2224/29117 ,  H01L2224/29124 ,  H01L2224/29147 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/83193 ,  H01L2224/83805 ,  H01L2224/92 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/351 ,  H01L2224/0231 ,  H01L2224/83 ,  H01L21/78 ,  H01L2924/00014 ,  H01L2924/01032 ,  H01L2924/00

摘要： A method for manufacturing a component having an electrical through-connection is described. The method includes the following steps: providing a semiconductor substrate having a front side and a back side opposite from the front side, producing an insulating trench, which annularly surrounds a contact area, on the front side of the semiconductor substrate, filling the insulating trench with an insulating material, producing an electrical contact structure on the front side of the semiconductor substrate by depositing an electrically conductive material in the contact area, removing the semiconductor material remaining in the contact area on the back side of the semiconductor substrate in order to produce a contact hole which opens up the bottom side of the contact structure, and depositing a metallic material in the contact hole in order to electrically connect the electrical contact structure to the back side of the semiconductor substrate.

摘要翻译： 描述了一种用于制造具有电穿通连接的部件的方法。 该方法包括以下步骤：提供具有与前侧相反的前侧和后侧的半导体衬底，在半导体衬底的正面上产生环形地包围接触区域的绝缘沟槽，填充绝缘沟槽 具有绝缘材料，通过在接触区域中沉积导电材料，在半导体衬底的正面上产生电接触结构，去除残留在半导体衬底背面接触区域中的半导体材料，以便产生 接触孔，其向开放接触结构的底侧开口，并且在接触孔中沉积金属材料，以将电接触结构电连接到半导体衬底的背面。

公开(公告)号：US20130189483A1

公开(公告)日：2013-07-25

申请号：US13744611

申请日：2013-01-18

申请人： Jochen REINMUTH ,  Yvonne BERGMANN

发明人： Jochen REINMUTH ,  Yvonne BERGMANN

IPC分类号： H05K13/00

CPC分类号： H05K13/00 ,  B81B2201/0264 ,  B81B2207/095 ,  B81C1/00301 ,  H01L21/7682 ,  H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H05K3/002 ,  H05K3/4076 ,  H05K3/421 ,  H05K2201/068 ,  Y10T29/49165 ,  Y10T428/24322 ,  H01L2924/00

摘要： A method is described for manufacturing a component having a through-connection. The method includes providing a substrate; forming a trench structure in the substrate, a substrate area which is completely surrounded by the trench structure being produced; forming a closing layer for closing off the trench structure, a cavity girded by the closing layer being formed in the area of the trench structure; removing substrate material from the substrate area surrounded by the closed-off trench structure; and at least partially filling the substrate area surrounded by the closed-off trench structure with a metallic material. A component having a through-connection is also described.

摘要翻译： 描述了用于制造具有贯通连接的部件的方法。 该方法包括提供基板; 在衬底中形成沟槽结构，被正被制造的沟槽结构完全包围的衬底区域; 形成用于封闭所述沟槽结构的封闭层，由所述封闭层围绕的腔体形成在所述沟槽结构的区域中; 从由封闭沟槽结构包围的衬底区域中去除衬底材料; 并且用金属材料至少部分地填充由封闭沟槽结构包围的衬底区域。 还描述了具有贯通连接的部件。

公开(公告)号：US20150001653A1

公开(公告)日：2015-01-01

申请号：US14314624

申请日：2014-06-25

申请人： Christoph SCHELLING ,  Yvonne BERGMANN ,  Jochen REINMUTH

发明人： Christoph SCHELLING ,  Yvonne BERGMANN ,  Jochen REINMUTH

IPC分类号： B81C1/00 ,  B81B3/00

CPC分类号： B81C1/00158 ,  B81B3/0021 ,  B81B2201/0257

摘要： For simplifying the manufacture of a MEMS structural component including a deflectable diaphragm which spans an opening in the rear side of the structural component, and including a fixed counter-element, which is provided with passage openings, the counter-element from the base substrate of the MEMS structural component is patterned and the deflectable diaphragm is implemented in a layered structure on the base substrate. These measures are intended to improve the diaphragm properties and reduce the overall height of the MEMS structural component.

摘要翻译： 为了简化MEMS结构部件的制造，该MEMS结构部件包括跨越结构部件的后侧的开口的可偏转隔膜，并且包括设置有通道开口的固定的相对元件，来自基底基板的相对元件 MEMS结构部件被图案化，并且可偏转膜片以基底衬底上的分层结构实现。 这些措施旨在改善隔膜性能并降低MEMS结构部件的整体高度。

公开(公告)号：US20130341766A1

公开(公告)日：2013-12-26

申请号：US13915353

申请日：2013-06-11

申请人： Jochen REINMUTH ,  Heribert WEBER ,  Timo SCHARY ,  Yvonne BERGMANN

发明人： Jochen REINMUTH ,  Heribert WEBER ,  Timo SCHARY ,  Yvonne BERGMANN

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L23/481 ,  H01L21/7682 ,  H01L21/76898 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for producing a component having a semiconductor substrate with through-hole plating is provided, the through-plating being surrounded by a recess, and the semiconductor substrate having a first layer on one side, which covers the recess on the first side. The semiconductor substrate has a second layer on a second side, which covers the recess on the second side, and the through-hole plating is surrounded by a ring structure which is produced from the semiconductor substrate. The recess surrounding the ring structure is produced in the same process step or at the same time as the recess for the through-hole plating.

摘要翻译： 提供了具有带通孔电镀的半导体基板的部件的制造方法，所述贯通电镀被凹部包围，所述半导体基板在一侧具有覆盖所述第一侧的所述凹部的第一层。 半导体衬底在第二侧上具有覆盖第二侧的凹部的第二层，并且通孔电镀被由半导体衬底产生的环形结构包围。 围绕环结构的凹部在相同的工艺步骤中或与用于通孔电镀的凹槽同时产生。