公开(公告)号：US20130209672A1

公开(公告)日：2013-08-15

申请号：US13763223

申请日：2013-02-08

申请人： Jochen REINMUTH ,  Frank SCHNELL ,  Heribert WEBER ,  Erhard HIRTH ,  Yvonne BERGMANN

发明人： Jochen REINMUTH ,  Frank SCHNELL ,  Heribert WEBER ,  Erhard HIRTH ,  Yvonne BERGMANN

IPC分类号： H05K3/00

CPC分类号： H05K3/0094 ,  B81B2201/0235 ,  B81B2207/096 ,  B81C1/00301 ,  H01L21/743 ,  H01L21/76898 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05548 ,  H01L2924/1461 ,  H05K3/4061 ,  H05K2201/09563 ,  H01L2924/00

摘要： A method for manufacturing a component having a through-connection. The method includes providing a semiconductor substrate, forming a recess in the semiconductor substrate, and introducing into the recess a pourable starting material which has a metal. The method furthermore includes carrying out a heating process, an electrically conductive structure forming the through-connection being developed from the pourable starting material.

摘要翻译： 一种用于制造具有通过连接的部件的方法。 该方法包括提供半导体衬底，在半导体衬底中形成凹陷，并将具有金属的可倾倒起始材料引入凹槽中。 该方法还包括进行加热过程，形成从可倾倒起始材料形成的贯通连接的导电结构。

公开(公告)号：US20130341766A1

公开(公告)日：2013-12-26

申请号：US13915353

申请日：2013-06-11

申请人： Jochen REINMUTH ,  Heribert WEBER ,  Timo SCHARY ,  Yvonne BERGMANN

发明人： Jochen REINMUTH ,  Heribert WEBER ,  Timo SCHARY ,  Yvonne BERGMANN

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L23/481 ,  H01L21/7682 ,  H01L21/76898 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for producing a component having a semiconductor substrate with through-hole plating is provided, the through-plating being surrounded by a recess, and the semiconductor substrate having a first layer on one side, which covers the recess on the first side. The semiconductor substrate has a second layer on a second side, which covers the recess on the second side, and the through-hole plating is surrounded by a ring structure which is produced from the semiconductor substrate. The recess surrounding the ring structure is produced in the same process step or at the same time as the recess for the through-hole plating.

摘要翻译： 提供了具有带通孔电镀的半导体基板的部件的制造方法，所述贯通电镀被凹部包围，所述半导体基板在一侧具有覆盖所述第一侧的所述凹部的第一层。 半导体衬底在第二侧上具有覆盖第二侧的凹部的第二层，并且通孔电镀被由半导体衬底产生的环形结构包围。 围绕环结构的凹部在相同的工艺步骤中或与用于通孔电镀的凹槽同时产生。

公开(公告)号：US20140374853A1

公开(公告)日：2014-12-25

申请号：US14307662

申请日：2014-06-18

申请人： Heribert WEBER ,  Hartmut KUEPPERS ,  Jens FREY ,  Jochen REINMUTH ,  Neil DAVIES

发明人： Heribert WEBER ,  Hartmut KUEPPERS ,  Jens FREY ,  Jochen REINMUTH ,  Neil DAVIES

IPC分类号： B81C1/00 ,  B81B3/00

CPC分类号： B81B7/0048 ,  H01L2224/16225

摘要： Measures are provided for stress decoupling between a semiconductor component and its mounting support, these measures being implementable very easily, inexpensively and in a space-saving manner, regardless of the substrate thickness of the component, and not being limited to soldered connections but instead also being usable in conjunction with other mounting and joining techniques. These measures relate to components, which include at least one electrical and/or micromechanical functionality and at least one wiring level, which is formed in a layer structure on a main surface of the component substrate, at least one mounting surface being implemented in the wiring level to establish a mechanical and/or electrical connection of the component to a support. The at least one mounting surface is spring mounted and is separated from the layer structure in at least some areas for this purpose.

摘要翻译： 提供了用于半导体部件与其安装支撑件之间的应力解耦的措施，这些措施可以非常容易地，低成本地且以节省空间的方式实现，而不管部件的基板厚度如何，而不仅限于焊接连接，而且还包括 可与其他安装和连接技术结合使用。 这些措施涉及组件，其包括至少一个电和/或微机械功能和至少一个布线层，其形成在部件基板的主表面上的层结构中，至少一个安装表面被实施在布线 以建立部件与支撑件的机械和/或电连接。 为此，至少一个安装表面是弹簧安装的，并且在至少一些区域中与层结构分离。

公开(公告)号：US20130299924A1

公开(公告)日：2013-11-14

申请号：US13890450

申请日：2013-05-09

申请人： Heribert WEBER ,  Frank Fischer ,  Mirko Hattass ,  Yvonne Bergmann

发明人： Heribert WEBER ,  Frank Fischer ,  Mirko Hattass ,  Yvonne Bergmann

IPC分类号： B81B3/00 ,  B81C1/00

CPC分类号： B81B3/0021 ,  B81B2201/025 ,  B81B2207/096 ,  B81C1/00238 ,  B81C1/00261 ,  B81C1/00301 ,  B81C2203/0792 ,  H01L2224/13 ,  H01L2224/48463 ,  H01L2224/73257 ,  H01L2924/1461 ,  H01L2924/00

摘要： A component system includes at least one MEMS element, a cap for a micromechanical structure of the MEMS element, and at least one ASIC substrate. The micromechanical structure of the MEMS element is implemented in the functional layer of an SOI wafer. The MEMS element is mounted face down, with the structured functional layer on the ASIC substrate, and the cap is implemented in the substrate of the SOI wafer. The ASIC substrate includes a starting substrate provided with a layered structure on both sides. At least one circuit level is implemented in each case both in the MEMS-side layered structure and in the rear-side layered structure of the ASIC substrate. In the ASIC substrate, at least one ASIC through contact is implemented which electrically contacts at least one circuit level of the rear-side layered structure and/or at least one circuit level of the MEMS-side layered structure.

摘要翻译： 组件系统包括至少一个MEMS元件，用于MEMS元件的微机械结构的盖以及至少一个ASIC基板。 MEMS元件的微机械结构在SOI晶片的功能层中实现。 MEMS元件面朝下安装，ASIC结构上的结构化功能层，并且帽被实现在SOI晶片的衬底中。 ASIC基板包括在两侧设置有分层结构的起始衬底。 在ASIC基板的MEMS侧分层结构和后侧层叠结构中，每种情况都至少实现一个电路电平。 在ASIC基板中，实现至少一个ASIC接触，其电接触后侧分层结构的至少一个电路电平和/或MEMS侧分层结构的至少一个电路电平。

公开(公告)号：US20140374918A1

公开(公告)日：2014-12-25

申请号：US14307108

申请日：2014-06-17

申请人： Heribert WEBER ,  Hartmut KUEPPERS ,  Jens Reutlingen ,  Neil DAVIES

发明人： Heribert WEBER ,  Hartmut KUEPPERS ,  Jens Reutlingen ,  Neil DAVIES

IPC分类号： H01L23/48

CPC分类号： H01L23/481 ,  B81C1/00238 ,  B81C3/001 ,  B81C2203/0109 ,  B81C2203/0792 ,  G01C19/5783 ,  H01L2924/0002 ,  H01L2924/00

摘要： In an ASIC element, vias are integrated into the CMOS processing of an ASIC substrate. The ASIC element includes an active front side in which the circuit functions are implemented. The at least one via is intended to establish an electrical connection between the active front side and the rear side of the element. The front side of the via is defined by at least one front-side trench which is completely filled, and the rear side is defined by at least one rear-side trench which is not completely filled. The rear-side trench opens into the filled front-side trench.

摘要翻译： 在ASIC元件中，通孔被集成到ASIC基板的CMOS处理中。 ASIC元件包括其中实现电路功能的主动正面。 该至少一个通孔旨在在元件的主动前侧和后侧之间建立电连接。 通孔的前侧由完全填充的至少一个前侧沟槽限定，并且后侧由未完全填充的至少一个后侧沟槽限定。 后侧沟槽穿过填充的前侧沟槽。

公开(公告)号：US20140377933A1

公开(公告)日：2014-12-25

申请号：US14306164

申请日：2014-06-16

申请人： Heribert WEBER

发明人： Heribert WEBER

IPC分类号： H01L49/02

CPC分类号： H01L28/60 ,  B81B7/0006 ,  H01L21/7682 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/66 ,  H01L28/10 ,  H01L28/40 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for producing a metal structure in a semiconductor substrate includes: producing an opening in the rear side of the semiconductor substrate in the area of the metal structure to be produced, which extends to the front side layer structure; filling the opening at least partially with a metal so that a metal structure is created which extends from the rear side of the semiconductor substrate to the front side layer structure; masking the rear side of the semiconductor substrate for a trench process for exposing the metal structure in such a way that the trench mask includes a lattice structure in an area adjacent to the metal structure; producing an isolation trench adjacent to the metal structure, the metal structure acting as a lateral etch stop and the lattice structure being laterally undercut in the trench mask; and applying a sealing layer to the mask.

摘要翻译： 在半导体衬底中制造金属结构体的方法包括：在要制造的金属结构的区域中，在半导体衬底的后侧产生延伸到前侧层结构的开口; 至少部分地用金属填充开口，从而形成从半导体衬底的后侧延伸到前侧层结构的金属结构; 掩蔽用于沟槽工艺的半导体衬底的背面，用于暴露金属结构，使得沟槽掩模在与金属结构相邻的区域中包括晶格结构; 产生与金属结构相邻的隔离沟槽，金属结构用作横向蚀刻停止层，并且栅格结构在沟槽掩模中横向底切; 以及向所述掩模施加密封层。

公开(公告)号：US20130334626A1

公开(公告)日：2013-12-19

申请号：US13915249

申请日：2013-06-11

申请人： Heribert WEBER

发明人： Heribert WEBER

IPC分类号： B81B3/00 ,  B81C1/00

CPC分类号： B81B3/0018 ,  B81B2201/0257 ,  B81C1/00158 ,  B81C1/00246 ,  B81C2203/0109 ,  B81C2203/0735 ,  B81C2203/0771 ,  H01L2224/11 ,  H04R2201/003

摘要： A hybrid integrated component includes: at least one ASIC element having integrated circuit elements and a back-end stack; an MEMS element having a micromechanical structure, which extends over the entire thickness of the MEMS substrate; and a cap wafer. The hybrid integrated component is provided with an additional micromechanical function. The MEMS element is mounted on the ASIC element, so that a gap exists between the micromechanical structure and the back-end stack of the ASIC element. The cap wafer is mounted above the micromechanical structure of the MEMS element. A pressure-sensitive diaphragm structure having at least one deflectable electrode of a capacitor system is implemented in the back-end stack of the ASIC element, which diaphragm structure spans a pressure connection in the rear side of the ASIC element.

摘要翻译： 混合集成部件包括：至少一个具有集成电路元件和后端叠层的ASIC元件; 具有微机械结构的MEMS元件，其在MEMS基板的整个厚度上延伸; 和盖片。 混合集成组件具有额外的微机械功能。 MEMS元件安装在ASIC元件上，使得在微机械结构和ASIC元件的后端堆叠之间存在间隙。 盖晶片安装在MEMS元件的微机械结构上方。 在ASIC元件的后端堆叠中实现具有电容器系统的至少一个可偏转电极的压敏膜结构，该隔膜结构跨越ASIC元件后侧的压力连接。

公开(公告)号：US20130299928A1

公开(公告)日：2013-11-14

申请号：US13890363

申请日：2013-05-09

申请人： Johannes CLASSEN ,  Heribert WEBER ,  Mirko HATTASS ,  Daniel Christoph MEISEL

发明人： Johannes CLASSEN ,  Heribert WEBER ,  Mirko HATTASS ,  Daniel Christoph MEISEL

IPC分类号： B81B3/00 ,  B81C1/00

CPC分类号： B81B3/0075 ,  B81B2207/07 ,  B81B2207/096 ,  B81C1/00238 ,  B81C1/00674 ,  B81C2203/0109 ,  H01L2224/16225 ,  H01L2924/19105

摘要： A hybridly integrated component includes an ASIC element having a processed front side, a first MEMS element having a micromechanical structure extending over the entire thickness of the first MEMS substrate, and a first cap wafer mounted over the micromechanical structure of the first MEMS element. At least one structural element of the micromechanical structure of the first MEMS element is deflectable, and the first MEMS element is mounted on the processed front side of the ASIC element such that a gap exists between the micromechanical structure and the ASIC element. A second MEMS element is mounted on the rear side of the ASIC element. The micromechanical structure of the second MEMS element extends over the entire thickness of the second MEMS substrate and includes at least one deflectable structural element.

摘要翻译： 混合集成部件包括具有经处理的前侧的ASIC元件，具有在第一MEMS基板的整个厚度上延伸的微机械结构的第一MEMS元件和安装在第一MEMS元件的微机械结构上的第一盖晶片。 第一MEMS元件的微机械结构的至少一个结构元件是可偏转的，并且第一MEMS元件安装在ASIC元件的经处理的正面上，使得在微机械结构和ASIC元件之间存在间隙。 第二个MEMS元件安装在ASIC元件的后侧。 第二MEMS元件的微机械结构在第二MEMS基板的整个厚度上延伸，并且包括至少一个可偏转的结构元件。

公开(公告)号：US20150061049A1

公开(公告)日：2015-03-05

申请号：US14478117

申请日：2014-09-05

申请人： Heribert WEBER

发明人： Heribert WEBER

IPC分类号： G01L1/14 ,  H01L29/66

CPC分类号： G01L1/148 ,  B81B3/007 ,  B81B2201/0235 ,  B81B2201/0264 ,  G01L9/0073 ,  H01L29/66007

摘要： A micromechanical component for a capacitive sensor device includes first and second electrodes. The first electrode is at least partially formed from a first semiconductor layer and/or metal layer, and at least one inner side of the second electrode facing the first electrode is formed from a second semiconductor layer and/or metal layer. A cavity is between the first and second electrodes. Continuous recesses are structured into the inner side of the second electrode and sealed off with a closure layer. At least one reinforcing layer of the second electrode and at least one contact element which is electrically connected to the first electrode, to the layer of the second electrode which forms the inner side, to at least one printed conductor, and/or to a conductive substrate area, are formed from at least one epi-polysilicon layer. Also described is a micromechanical component manufacturing method for a capacitive sensor device.

摘要翻译： 用于电容传感器装置的微机械部件包括第一和第二电极。 第一电极至少部分地由第一半导体层和/或金属层形成，并且第二电极的面向第一电极的至少一个内侧由第二半导体层和/或金属层形成。 空腔在第一和第二电极之间。 连续的凹部被构造成第二电极的内侧并用闭合层密封。 至少一个第二电极的加强层和至少一个与第一电极电连接到形成内侧的第二电极层的至少一个接触元件到至少一个印刷导体和/或导电 衬底区域由至少一个外延多晶硅层形成。 还描述了一种用于电容式传感器装置的微机械部件制造方法。

公开(公告)号：US20140374917A1

公开(公告)日：2014-12-25

申请号：US14307055

申请日：2014-06-17

申请人： Heribert WEBER ,  Hartmut KUEPPERS ,  Jens Reutlingen ,  Neil DAVIES

发明人： Heribert WEBER ,  Hartmut KUEPPERS ,  Jens Reutlingen ,  Neil DAVIES

IPC分类号： H01L23/538 ,  H01L25/065

CPC分类号： H01L29/0657 ,  B81C1/00238 ,  B81C2203/0118 ,  B81C2203/0792 ,  H01L23/3114 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/48091 ,  H01L2224/48471 ,  H01L2225/06506 ,  H01L2225/06568 ,  H01L2924/00014

摘要： A vertically integrated hybrid component is implemented in the form of a wafer level package including: at least two element substrates assembled one above the other; a molded upper sealing layer made of an electrically insulating casting; and an external electrical contacting of the component being implemented on the top side via at least one contact stamp which is embedded in the sealing layer so that (i) its lower end is connected to a wiring level of an element substrate and (ii) its upper end is exposed in the surface of the sealing layer.

摘要翻译： 垂直集成的混合部件以晶片级封装的形式实现，包括：至少两个元件基板，一个彼此组装; 由电绝缘铸件制成的模制上密封层; 并且所述部件的外部电接触通过嵌入在所述密封层中的至少一个接触印模在顶侧上实现，使得（i）其下端连接到元件基板的布线层，以及（ii）其 上端暴露在密封层的表面。