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公开(公告)号：US20100148195A1
公开(公告)日：2010-06-17
申请号：US12710181
申请日：2010-02-22
申请人： John F. Kaeding , Dong-Seon Lee , Michael Iza , Troy J. Baker , Hiroshi Sato , Benjamin A. Haskell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： John F. Kaeding , Dong-Seon Lee , Michael Iza , Troy J. Baker , Hiroshi Sato , Benjamin A. Haskell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L33/00 , H01L29/205
CPC分类号： H01L21/02433 , C30B23/025 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/02378 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/007
摘要： A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
摘要翻译： 使用有意识的基板改善半极性（Al，In，Ga，B）N半导体薄膜生长的方法。 具体地说，该方法包括有意地将基板，基板加载到反应器中，在氮气和/或氢气和/或氨气流下加热基板，在加热的基板上沉积In x Ga 1-x N成核层，沉积半极性氮化物 半导体薄膜在InxGa1-xN成核层上，并在氮气过压下冷却衬底。
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公开(公告)号：US08110482B2
公开(公告)日：2012-02-07
申请号：US12710181
申请日：2010-02-22
申请人： John F. Kaeding , Dong-Seon Lee , Michael Iza , Troy J. Baker , Hitoshi Sato , Benjamin A. Haskell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： John F. Kaeding , Dong-Seon Lee , Michael Iza , Troy J. Baker , Hitoshi Sato , Benjamin A. Haskell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
CPC分类号： H01L21/02433 , C30B23/025 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/02378 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/007
摘要： A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
摘要翻译： 使用有意识的基板改善半极性（Al，In，Ga，B）N半导体薄膜生长的方法。 具体地说，该方法包括有意地将基板，基板加载到反应器中，在氮气和/或氢气和/或氨气流下加热基板，在加热的基板上沉积In x Ga 1-x N成核层，沉积半极性氮化物 半导体薄膜在InxGa1-xN成核层上，并在氮气过压下冷却衬底。
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公开(公告)号：US20140183579A1
公开(公告)日：2014-07-03
申请号：US13732532
申请日：2013-01-02
申请人： John F. Kaeding , Dong-Seon Lee , Michael Iza , Troy J. Baker , Hitoshi Sato , Benjamin A. Haskell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： John F. Kaeding , Dong-Seon Lee , Michael Iza , Troy J. Baker , Hitoshi Sato , Benjamin A. Haskell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
CPC分类号： H01L33/0075 , H01L33/16
摘要： A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
摘要翻译： 使用有意识的基板改善半极性（Al，In，Ga，B）N半导体薄膜生长的方法。 具体地说，该方法包括有意地将基板，基板加载到反应器中，在氮气和/或氢气和/或氨气流下加热基板，在加热的基板上沉积In x Ga 1-x N成核层，沉积半极性氮化物 半导体薄膜在InxGa1-xN成核层上，并在氮气过压下冷却衬底。
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公开(公告)号：US20120074525A1
公开(公告)日：2012-03-29
申请号：US13311986
申请日：2011-12-06
申请人： John F. Kaeding , Dong-Seon Lee , Michael Iza , Troy J. Baker , Hitoshi Sato , Benjamin A. Haskell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： John F. Kaeding , Dong-Seon Lee , Michael Iza , Troy J. Baker , Hitoshi Sato , Benjamin A. Haskell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
CPC分类号： H01L21/02433 , C30B23/025 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/02378 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/007
摘要： A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
摘要翻译： 使用有意识的基板改善半极性（Al，In，Ga，B）N半导体薄膜生长的方法。 具体地说，该方法包括有意地将基板，基板加载到反应器中，在氮气和/或氢气和/或氨气流下加热基板，在加热的基板上沉积In x Ga 1-x N成核层，沉积半极性氮化物 半导体薄膜在InxGa1-xN成核层上，并在氮气过压下冷却衬底。
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公开(公告)号：US07691658B2
公开(公告)日：2010-04-06
申请号：US11655573
申请日：2007-01-19
申请人： John F. Kaeding , Dong-Seon Lee , Michael Iza , Troy J. Baker , Hitoshi Sato , Benjamin A. Haskell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： John F. Kaeding , Dong-Seon Lee , Michael Iza , Troy J. Baker , Hitoshi Sato , Benjamin A. Haskell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
CPC分类号： H01L21/02433 , C30B23/025 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/02378 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/007
摘要： A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1−xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1−xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
摘要翻译： 使用有意识的基板改善半极性（Al，In，Ga，B）N半导体薄膜生长的方法。 具体地说，该方法包括有意地将基板，基板加载到反应器中，在氮气和/或氢气和/或氨气流下加热基板，在加热的基板上沉积In x Ga 1-x N成核层，沉积半极性氮化物 半导体薄膜在InxGa1-xN成核层上，并在氮气过压下冷却衬底。
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公开(公告)号：US08368179B2
公开(公告)日：2013-02-05
申请号：US13311986
申请日：2011-12-06
申请人： John F. Kaeding , Dong-Seon Lee , Michael Iza , Troy J. Baker , Hitoshi Sato , Benjamin A. Haskell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： John F. Kaeding , Dong-Seon Lee , Michael Iza , Troy J. Baker , Hitoshi Sato , Benjamin A. Haskell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L29/20
CPC分类号： H01L21/02433 , C30B23/025 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/02378 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/007
摘要： A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
摘要翻译： 使用有意识的基板改善半极性（Al，In，Ga，B）N半导体薄膜生长的方法。 具体地说，该方法包括有意地将基板，基板加载到反应器中，在氮气和/或氢气和/或氨气流下加热基板，在加热的基板上沉积In x Ga 1-x N成核层，沉积半极性氮化物 半导体薄膜在InxGa1-xN成核层上，并在氮气过压下冷却衬底。
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7.发明授权Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition 有权通过金属有机化学气相沉积来增强半极性（Al，In，Ga，B）N生长的方法公开(公告)号：US07687293B2
公开(公告)日：2010-03-30
申请号：US11655572
申请日：2007-01-19
申请人： Hiroshi Sato , John F. Kaeding , Michael Iza , Troy J. Baker , Benjamin A. Haskell , Steven P. DenBaars , Shuji Nakamura
发明人： Hiroshi Sato , John F. Kaeding , Michael Iza , Troy J. Baker , Benjamin A. Haskell , Steven P. DenBaars , Shuji Nakamura
CPC分类号： H01L29/045 , C30B25/02 , C30B29/403 , C30B29/406 , H01L21/02365 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/02516 , H01L21/0254 , H01L21/0262
摘要： A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al,In,Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
摘要翻译： 通过使用含有至少一些铟的（Al，In，Ga）N成核层，通过金属有机化学气相沉积（MOCVD）增强器件质量的平面半极性半导体薄膜的生长的方法。 具体地，该方法包括将衬底装载到反应器中，在氮气和/或氢气和/或氨气流下加热衬底，在加热衬底上沉积In x Ga 1-x N成核层，在半导体衬底上沉积半极性氮化物半导体薄膜 In x Ga 1-x N成核层，并在氮气过压下冷却该衬底。
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8.发明授权Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition 有权通过金属有机化学气相沉积来增强半极性（Al，In，Ga，B）N生长的方法公开(公告)号：US08405128B2
公开(公告)日：2013-03-26
申请号：US12716670
申请日：2010-03-03
申请人： Hitoshi Sato , John F. Kaeding , Michael Iza , Benjamin A. Haskell , Troy J. Baker , Steven P. DenBaars , Shuji Nakamura
发明人： Hitoshi Sato , John F. Kaeding , Michael Iza , Benjamin A. Haskell , Troy J. Baker , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L31/06
CPC分类号： H01L29/045 , C30B25/02 , C30B29/403 , C30B29/406 , H01L21/02365 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/02516 , H01L21/0254 , H01L21/0262
摘要： A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al, In, Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
摘要翻译： 通过使用含有至少一些铟的（Al，In，Ga）N成核层，通过金属有机化学气相沉积（MOCVD）增强器件质量的平面半极性半导体薄膜的生长的方法。 具体地，该方法包括将衬底装载到反应器中，在氮气和/或氢气和/或氨气流下加热衬底，在加热衬底上沉积In x Ga 1-x N成核层，在半导体衬底上沉积半极性氮化物半导体薄膜 In x Ga 1-x N成核层，并在氮气过压下冷却该衬底。
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9.发明申请METHOD FOR ENHANCING GROWTH OF SEMIPOLAR (AL,IN,GA,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION 有权用于增强半成品（AL，IN，GA，B）N生长的方法通过金属化学气相沉积公开(公告)号：US20100155778A1
公开(公告)日：2010-06-24
申请号：US12716670
申请日：2010-03-03
申请人： Hitoshi Sato , John F. Kaeding , Michael Iza , Troy J. Baker , Benjamin A. Haskell , Steven P. DenBaars , Shuji Nakamura
发明人： Hitoshi Sato , John F. Kaeding , Michael Iza , Troy J. Baker , Benjamin A. Haskell , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L29/20 , H01L21/203
CPC分类号： H01L29/045 , C30B25/02 , C30B29/403 , C30B29/406 , H01L21/02365 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/02516 , H01L21/0254 , H01L21/0262
摘要： A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al, In, Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
摘要翻译： 通过使用含有至少一些铟的（Al，In，Ga）N成核层，通过金属有机化学气相沉积（MOCVD）增强器件质量的平面半极性半导体薄膜的生长的方法。 具体地，该方法包括将衬底装载到反应器中，在氮气和/或氢气和/或氨气流下加热衬底，在加热衬底上沉积In x Ga 1-x N成核层，在半导体衬底上沉积半极性氮化物半导体薄膜 In x Ga 1-x N成核层，并在氮气过压下冷却该衬底。
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10.发明申请METHOD FOR ENHANCING GROWTH OF SEMIPOLAR (Al,In,Ga,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION 审中-公开用于增强二氧化硅生长的方法（Al，In，Ga，B）N通过金属化学气相沉积公开(公告)号：US20130168833A1
公开(公告)日：2013-07-04
申请号：US13776446
申请日：2013-02-25
申请人： Hitoshi Sato , John F. Kaeding , Michael Iza , Benjamin A. Haskell , Troy J. Baker , Steven P. DenBaars , Shuji Nakamura
发明人： Hitoshi Sato , John F. Kaeding , Michael Iza , Benjamin A. Haskell , Troy J. Baker , Steven P. DenBaars , Shuji Nakamura
CPC分类号： H01L29/045 , C30B25/02 , C30B29/403 , C30B29/406 , H01L21/02365 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/02516 , H01L21/0254 , H01L21/0262
摘要： A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al,In,Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
摘要翻译： 通过使用含有至少一些铟的（Al，In，Ga）N成核层，通过金属有机化学气相沉积（MOCVD）增强器件质量的平面半极性半导体薄膜的生长的方法。 具体地，该方法包括将衬底装载到反应器中，在氮气和/或氢气和/或氨气流下加热衬底，在加热衬底上沉积In x Ga 1-x N成核层，在半导体衬底上沉积半极性氮化物半导体薄膜 In x Ga 1-x N成核层，并在氮气过压下冷却该衬底。
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