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公开(公告)号：US06407626B1
公开(公告)日：2002-06-18
申请号：US09715759
申请日：2000-11-17
IPC分类号： H03K500
CPC分类号： H03K5/1252 , H03K5/082
摘要： Provided is a symmetrical filter that uses a single comparator. In addition to a voltage divider, a current regulator, and a comparator, the filter of the invention provides control logic that turns on or off a pull up switch and/or pull down switch in order to fully charge or fully discharge a capacitor. Accordingly, in one aspect, the invention is a control logic for a symmetrical filter. Furthermore, timing logic is provided to provide for a more rigorous symmetrical filter performance.
摘要翻译： 提供了使用单个比较器的对称滤波器。 除了分压器，电流调节器和比较器之外，本发明的滤波器还提供控制逻辑，其接通或断开上拉开关和/或下拉开关以便完全充电或完全放电电容器。 因此，一方面，本发明是用于对称滤波器的控制逻辑。 此外，提供定时逻辑以提供更严格的对称滤波器性能。
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公开(公告)号：US06215637B1
公开(公告)日：2001-04-10
申请号：US09290283
申请日：1999-04-13
IPC分类号： H02H322
CPC分类号： H01L27/0259
摘要： A internal circuitry protection scheme which protects on-IC circuitry when an external pin is shorted to a higher than normal voltage. The disclosed solution eliminates cross-talk due to a parasitic NPN.
摘要翻译： 内部电路保护方案，当外部引脚短路到高于正常电压时，保护IC上的电路。 所公开的解决方案消除了由于寄生NPN引起的串扰。
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公开(公告)号：US6111737A
公开(公告)日：2000-08-29
申请号：US267490
申请日：1999-03-11
CPC分类号： H01L27/0251
摘要： An internal circuitry protection scheme which protects on-IC circuitry when an external regulator voltage pin is shorted to a higher voltage. The circuit prevents damage to the on-die circuitry that is on the internal voltage rail, by clamping the received voltage, thereby eliminating the chance of damaging the on die circuitry. The circuit offers protection even if the voltage difference is large, but the difference remains small between the internal rail and the external regulated voltage under normal operation.
摘要翻译： 内部电路保护方案，当外部稳压器电压引脚短路到较高电压时，保护IC内部电路。 该电路通过钳位接收到的电压来防止损坏内部电压轨上的片上电路，从而消除了损坏管芯电路的可能性。 即使电压差大，电路也能提供保护，但在正常工作状态下，内部轨道与外部调节电压之间的差异仍然很小。
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公开(公告)号：US06376870B1
公开(公告)日：2002-04-23
申请号：US09658202
申请日：2000-09-08
IPC分类号： H01L2972
CPC分类号： H01L21/823493 , H01L27/088 , H01L29/1087
摘要： A high-breakdown voltage transistor (30; 30′) is disclosed. The transistor (30; 30′) is formed into a well arrangement in which a shallow, heavily doped, well (44) is disposed at least partially within a deeper, more lightly-doped well (50), both formed into an epitaxial layer (43) of the substrate (42). The deep well (50) is also used, by itself, for the formation of high-voltage transistors, while the shallower well (44) is used by itself in low-voltage, high-performance transistors. This construction permits the use of high-performance, and precisely matching, transistors in high bias voltage applications, without fear of body-to-substrate (or “back-gate-to-substrate”) junction breakdown.
摘要翻译： 公开了一种高耐压晶体管（30; 30'）。 晶体管（30; 30'）形成为阱布置，其中浅的，重掺杂的阱（44）至少部分地设置在更深，更轻掺杂的阱（50）内，两者都形成为外延层 （42）的（43）。 深阱（50）本身也用于形成高压晶体管，而较浅的阱（44）本身用于低电压，高性能的晶体管。 这种结构允许在高偏压应用中使用高性能和精确匹配的晶体管，而不用担心体对衬底（或“背栅极到衬底”）结击穿。
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公开(公告)号：US06373094B1
公开(公告)日：2002-04-16
申请号：US09908024
申请日：2001-07-18
IPC分类号： H01L29788
摘要： An EEPROM cell (10) formed on a substrate (18) using conventional process steps is provided. The cell (10) includes first (12) and second (14) conductive regions in the substrate (18) below the substrate's outer surface (28), and the first (12) and second (14) conductive regions are laterally displaced from one another by a predetermined distance (32). The cell (10) also includes an insulating layer (20) outwardly from the outer surface (28) of the substrate (18) positioned so that its edges are substantially in alignment between the first (12) and second (14) conductive regions. The cell (10) further includes a floating gate layer (22) outwardly from the insulating layer (20) and in substantially the same shape as the insulating layer (20). The cell (10) also includes a diffusion region (24 or 26) that extends laterally from at least one of the first (12) and second (14) conductive regions so as to overlap with the insulating layer (20). The diffusion region (24 or 26) provides a source of charge for placement on the floating gate layer (22) when programming the EEPROM cell (10).
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公开(公告)号：US5812006A
公开(公告)日：1998-09-22
申请号：US739375
申请日：1996-10-29
申请人： Ross E. Teggatz , Joseph A. Devore , Kenneth G. Buss , Thomas A. Schmidt , Taylor R. Efland , Stephen C. Kwan
发明人： Ross E. Teggatz , Joseph A. Devore , Kenneth G. Buss , Thomas A. Schmidt , Taylor R. Efland , Stephen C. Kwan
IPC分类号： H03K17/06 , H03K17/082 , H03K5/08
CPC分类号： H03K17/063 , H03K17/0822
摘要： An optimized power output clamping structure, includes a power output transistor having a first breakdown voltage and a breakdown structure having a second breakdown voltage coupled to the power output transistor. The second breakdown voltage is less than the first breakdown voltage and follows the first breakdown voltage across all temperature and semiconductor process variations. This feature allows a reduction in breakdown voltage guardbanding and increases output structure reliability. A method of protecting a circuit from inductive flyback is also disclosed. The method includes the steps of driving an inductive load with drive circuitry, turning off the inductive load, and clamping an inductive voltage at a voltage magnitude that protects the drive circuitry from breakdown across all temperature and processing variations.
摘要翻译： 优化的功率输出钳位结构包括具有第一击穿电压的功率输出晶体管和具有耦合到功率输出晶体管的第二击穿电压的击穿结构。 第二击穿电压小于第一击穿电压，并且遵循所有温度和半导体工艺变化的第一击穿电压。 该特征允许降低击穿电压保护带并增加输出结构的可靠性。 还公开了一种保护电路免受感应回扫的方法。 该方法包括以下步骤：利用驱动电路驱动感性负载，关闭感性负载，以及钳位感应电压，电压幅度保护驱动电路不受所有温度和处理变化的影响。
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公开(公告)号：US5675241A
公开(公告)日：1997-10-07
申请号：US672125
申请日：1996-06-27
CPC分类号： G05F3/247
摘要： A circuit and method for providing a low drop out voltage regulator. A source follower circuit is provided having a transistor (MD1) with an output terminal for driving a load at its source terminal and a voltage supply coupled to the drain terminal. At least one diode (D1) is coupled between the gate terminal and a ground reference to provide a predetermined voltage at the gate of the transistor (MD1). A voltage multiplier circuit is provided having an input (IN) for receiving an oscillating input voltage and a charge storage device (39) coupled between the oscillating input and a voltage reference (Vref), and being further coupled in series with the voltage reference and then to the gate terminal of the transistor (MD1). The oscillating input voltage is used to charge the charge storage device (39) to a voltage approximately equal to the voltage reference. When the supply voltage falls below the normal level, the series combination of the voltage reference and the charge storage device provides a multiplied voltage at the gate of the transistor, for example a voltage of twice the reference voltage. This high gate voltage keeps the output at the source of the transistor at a high voltage that is approximately equal to the supply voltage, such that the circuit provides a low drop out voltage under low supply voltage conditions.
摘要翻译： 一种用于提供低压降稳压器的电路和方法。 源极跟随器电路具有晶体管（MD1），其具有用于驱动其源极端子处的负载的输出端子和耦合到漏极端子的电压源。 至少一个二极管（D1）耦合在栅极端子和接地基准之间，以在晶体管（MD1）的栅极处提供预定的电压。 提供了具有用于接收振荡输入电压的输入（IN）和耦合在振荡输入和电压参考（Vref）之间的电荷存储装置（39）的电压倍增器电路，并进一步与电压基准串联耦合， 然后到晶体管（MD1）的栅极端子。 振荡输入电压用于将电荷存储装置（39）充电至大致等于电压基准的电压。 当电源电压低于正常电平时，电压基准和电荷存储装置的串联组合在晶体管的栅极处提供倍增电压，例如两倍于参考电压的电压。 该高栅极电压将晶体管源极处的输出保持在大致等于电源电压的高电压，使得该电路在低电源电压条件下提供低压降电压。
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公开(公告)号：US5710515A
公开(公告)日：1998-01-20
申请号：US480063
申请日：1995-06-07
IPC分类号： G01K7/01 , G01R31/28 , G01R31/30 , G01R31/3167 , H01L23/34 , G01R31/02 , G01R31/00 , G08B21/00
CPC分类号： H01L23/34 , G01K7/01 , G01R31/30 , G01R31/3167 , H01L2924/0002
摘要： A testable temperature warning circuit (120) in an integrated circuit substrate (124) provides a warning if the substrate temperature exceeds a critical temperature. A programming circuit (140) controls a selection, circuit (128) to establish a programmably selectable temperature at either the critical temperature or a second predetermined temperature lower than the critical temperature to enable the warning circuit operation to be tested at a temperature lower than the critical temperature. In one embodiment, the selection circuit 128 comprises a current source that produces a voltage drop across the resistor 121 and base-emitter of the transistor 122 produces a substrate temperature indicating current of magnitude related to the temperature of the substrate. The substrate temperature indicating current at the second temperature is extrapolatingly related to the substrate temperature indicating current at the critical temperature. A method is also presented for testing a temperature warning circuit fabricated in an integrated circuit substrate.
摘要翻译： 如果衬底温度超过临界温度，则集成电路衬底（124）中的可测温度警告电路（120）提供警告。 编程电路（140）控制选择电路（128）在临界温度或低于临界温度的第二预定温度下建立可编程选择的温度，以使报警电路操作能够在低于 临界温度。 在一个实施例中，选择电路128包括在电阻器121上产生电压降的电流源，并且晶体管122的基极 - 发射极产生指示与衬底温度相关的电流幅度的衬底温度。 指示在第二温度下的电流的衬底温度与指示临界温度下的电流的衬底温度外推相关。 还提出了一种用于测试在集成电路基板中制造的温度警告电路的方法。
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公开(公告)号：US06373343B1
公开(公告)日：2002-04-16
申请号：US09649367
申请日：2000-08-28
IPC分类号： H03B524
CPC分类号： H03K3/0231
摘要： An integrated circuit (10) is disclosed comprising a fundamental frequency oscillator comprising a reference node (32) whose voltage varies between a high threshold and a low threshold. The fundamental frequency oscillator is operable to generate a first output at the fundamental frequency on a first output node (36). The integrated circuit (10) also comprises a circuit (C2) coupled to the reference node. The circuit (C2) is operable to sense the voltage at the reference node (32), to determine when the voltage exceeds an intermediate threshold between the high threshold and the low threshold, and to generate a second output in response to the determination. The integrated circuit (10) also comprises logic (40) coupled to the circuit (C2) and load circuitry (50) coupled to the logic (40). The logic (40) is operable to generate an output signal at an output frequency greater than the fundamental frequency in response to the second output and the first output.
摘要翻译： 公开了一种集成电路（10），其包括基频振荡器，其包括其电压在高阈值和低阈值之间变化的参考节点（32）。 基频振荡器可操作以在第一输出节点（36）上产生基频处的第一输出。 集成电路（10）还包括耦合到参考节点的电路（C2）。 电路（C2）可操作以感测参考节点（32）处的电压，以确定电压何时超过高阈值和低阈值之间的中间阈值，并响应于该确定产生第二输出。 集成电路（10）还包括耦合到电路（C2）的逻辑（40）和耦合到逻辑（40）的负载电路（50）。 逻辑（40）可操作以响应于第二输出和第一输出而以大于基频的输出频率产生输出信号。
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10.发明授权Reducing the natural current limit in a power MOS device by reducing the gate-source voltage 失效通过降低栅源电压降低功率MOS器件的自然电流限制
公开(公告)号：US5579193A
公开(公告)日：1996-11-26
申请号：US486926
申请日：1995-06-07
IPC分类号： H03K17/082 , H02H7/10
CPC分类号： H03K17/0822
摘要： In accordance with the present invention, an output current limit circuit for protecting a power MOS output device of an integrated circuit from an excessive drain current comprises a power MOS device 110, sensing circuitry 30 to sense a predetermined trigger current, and limitation circuitry 20 to reduce a gate-source voltage on MOS output device 110 to a predetermined approximately fixed value. A drain current I.sub.D flows through power MOS device 110 from output terminal 102 in response to the gate-source voltage. A short circuit condition may allow an excessive amount of drain current I.sub.D to flow through output terminal 102. The gate-source voltage is reduced in response to sensing the trigger current. Reducing the gate-source voltage raises a drain-source resistance of MOS device 110 and reduces drain current I.sub.D so that MOS device 110 is not damaged by the short circuit condition.
摘要翻译： 根据本发明，用于保护集成电路的功率MOS输出装置与过剩漏极电流的输出限流电路包括功率MOS器件110，检测电路30以感测预定的触发电流，以及限制电路20至 将MOS输出装置110上的栅极 - 源极电压降低到预定的大致固定值。 漏极电流ID响应于栅极 - 源极电压从输出端子102流过功率MOS器件110。 短路状态可允许过量的漏极电流ID流过输出端子102.响应于感测触发电流，栅极 - 源极电压被降低。 降低栅极 - 源极电压会提高MOS器件110的漏极 - 源极电阻并且减少漏极电流ID，使得MOS器件110不会被短路状态损坏。
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