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公开(公告)号：US5924277A
公开(公告)日：1999-07-20
申请号：US767920
申请日：1996-12-17
CPC分类号： F03H1/0043
摘要： Ion erosion of grids is reduced in an ion thruster with a multiple-grid ion-optics system. The thruster has an array of aperture sets in which aperture areas change in a perimeter region of the array. In one ion-optics system embodiment, a screen aperture area is reduced and a decelerator aperture area is increased in aperture sets that are proximate to the perimeter of the array. Prototype tests of this embodiment have illustrated significant reduction of ion erosion.
摘要翻译： 使用多栅离子光学系统的离子推进器减小了栅格的离子侵蚀。 推进器具有一组孔径组，其中孔径区域在阵列的周边区域中变化。 在一个离子光学系统实施例中，屏幕孔径面积减小，并且靠近阵列周边的孔径组中的减速器孔径面积增加。 该实施例的原型测试表明离子侵蚀显着减少。
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公开(公告)号：US5048457A
公开(公告)日：1991-09-17
申请号：US531711
申请日：1990-05-31
申请人： Julius Hyman, Jr. , John R. Beattie , Jesse N. Matossian , Owen K. Wu , Juan F. Lam , Lawrence Anderson
发明人： Julius Hyman, Jr. , John R. Beattie , Jesse N. Matossian , Owen K. Wu , Juan F. Lam , Lawrence Anderson
IPC分类号： C30B23/02
摘要： A molecular beam epitaxy (MBE) growth method and apparatus is disclosed which achieves a significantly improved sticking coefficient for materials like Hg upon a substrate, and thus a higher efficiency. A highly ionized, low pressure plasma is formed consisting of a mixture of ions of one substance of a compound to be epitaxially grown, neutral particles of the substance and electrons, and also preferably both ionization and excitation radiation. The plasma is directed onto a substrate together with a flux of the other substance in the compound; the flux can be in the form of either a vapor, or a second plasma. Radiation assisted epitaxial growth for Hg compounds in which ionization and excitation radiation are formed from Hg vapor and used to assist epitaxial growth with neutral Hg particles is also described. The plasma is formed in a special discharge chamber having a hollow cathode with an emissive-mix-free cathode insert. The source is preferably a refractory metal such as rolled tantalum foil, which is substantially emissive-material-free and does not contaminate the plasma. Good results are obtained by allowing the plasma to simply diffuse out through an exit port in the discharge chamber, without special extraction assemblies required by prior ion thrusters. Hg sticking coefficients have been improved by a factor of 40 or more.
摘要翻译： 公开了一种分子束外延（MBE）生长方法和装置，其实现了对衬底上的诸如Hg的材料的显着改善的粘附系数，并且因此具有更高的效率。 形成高离子化的低压等离子体，其由外延生长的化合物的一种物质的离子和物质的中性粒子和电子的混合物组成，并且还优选电离和激发辐射。 等离子体与化合物中另一种物质的助熔剂一起引导到基底上; 通量可以是蒸汽或第二等离子体的形式。 还描述了汞化合物的辐射辅助外延生长，其中电离和激发辐射由Hg蒸气形成并用于辅助外延生长与中性Hg颗粒。 等离子体形成在具有空心阴极的特殊放电室中，其具有无发射混合阴极插入物。 来源优选是难熔金属，例如轧制钽箔，其基本上不发射材料，并且不污染等离子体。 通过允许等离子体简单地通过放电室中的出口扩散出来，而不需要先前的离子推进器所需的特殊提取组件，可获得良好的结果。 Hg粘附系数提高了40倍以上。
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公开(公告)号：US5152866A
公开(公告)日：1992-10-06
申请号：US532144
申请日：1990-05-31
申请人： Julius Hyman, Jr. , John R. Beattie , Jesse N. Matossian , Owen K. Wu , Juan F. Lam , Lawrence Anderson
发明人： Julius Hyman, Jr. , John R. Beattie , Jesse N. Matossian , Owen K. Wu , Juan F. Lam , Lawrence Anderson
IPC分类号： C30B23/02
摘要： A molecular beam epitaxy (MBE) growth method and apparatus is disclosed which achieves a significantly improved sticking coefficient for materials like Hg upon a substrate, and thus a higher efficiency. A highly ionized, low pressure plasma is formed consisting of a mixture of ions of one substance of a compound to be epitaxially grown, neutral particles of the substance and electrons, and also preferably both ionization and excitation radiation. The plasma is directed onto a substrate together with a flux of the other substance in the compound; the flux can be in the form of either a vapor, or a second plasma. Radiation assisted epitaxial growth for Hg compounds in which ionization and excitation radiation are formed from Hg vapor and used to assist epitaxial growth with neutral Hg particles is also described. The plasma is formed in a special discharge chamber having a hollow cathode with an emissive-mix-free cathode insert. The source is preferably a refractory metal such as rolled tantalum foil, which is substantially emissive-material-free and does not contaminate the plasma. Good results are obtained by allowing the plasma to simply diffuse out through an exit port in the discharge chamber, without special extraction assemblies required by prior ion thrusters. Hg sticking coefficients have been improved by a factor of 40 or more.
摘要翻译： 公开了一种分子束外延（MBE）生长方法和装置，其实现了对衬底上的诸如Hg的材料的显着改善的粘附系数，并且因此具有更高的效率。 形成高离子化的低压等离子体，其由外延生长的化合物的一种物质的离子和物质的中性粒子和电子的混合物组成，并且还优选电离和激发辐射。 等离子体与化合物中另一种物质的助熔剂一起引导到基底上; 通量可以是蒸汽或第二等离子体的形式。 还描述了汞化合物的辐射辅助外延生长，其中电离和激发辐射由Hg蒸气形成并用于辅助外延生长与中性Hg颗粒。 等离子体形成在具有空心阴极的特殊放电室中，其具有无发射混合阴极插入物。 来源优选是难熔金属，例如轧制钽箔，其基本上不发射材料，并且不污染等离子体。 通过允许等离子体简单地通过放电室中的出口扩散出来，而不需要先前的离子推进器所需的特殊提取组件，可获得良好的结果。 Hg粘附系数提高了40倍以上。
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公开(公告)号：US5833918A
公开(公告)日：1998-11-10
申请号：US672133
申请日：1996-06-27
IPC分类号： C21D1/09 , C21D1/18 , C21D1/28 , C21D1/38 , C21D1/613 , C21D1/773 , C21D9/32 , C23C8/36 , C21D1/06
摘要： A workpiece is heated by first forming an ionized gas plasma around the workpiece. A positive potential is applied to the workpiece to accelerate electrons from the plasma into the workpiece. The workpiece is uniformly surface heated by the energy directed into the workpiece by the electrons. The workpiece is cooled by providing a flow of a pressurized liquid material such as carbon dioxide having a triple point. The liquid material is expanded through a nozzle to form solid particles that contact the surface of the workpiece and remove heat from it by subliming.
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5.发明授权
公开(公告)号：US5868878A
公开(公告)日：1999-02-09
申请号：US113550
申请日：1993-08-27
摘要： A workpiece is heated by first forming an ionized gas plasma around the workpiece. A positive potential is applied to the workpiece to accelerate electrons from the plasma into the workpiece. The workpiece is uniformly surface heated by the energy directed into the workpiece by the electrons. The workpiece is cooled by providing a flow of a pressurized liquid material such as carbon dioxide having a triple point. The liquid material is expanded through a nozzle to form solid particles that contact the surface of the workpiece and remove heat from it by subliming.
摘要翻译： 首先在工件周围形成电离气体等离子体来加热工件。 对工件施加正电位以将电子从等离子体加速到工件中。 工件由电子被引入工件的能量均匀地表面加热。 通过提供加压液体材料（例如具有三重点的二氧化碳）的流动来冷却工件。 液体材料通过喷嘴膨胀以形成接触工件表面的固体颗粒，并通过升华从其中除去热量。
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公开(公告)号：US5498290A
公开(公告)日：1996-03-12
申请号：US113552
申请日：1993-08-27
IPC分类号： C23C14/48 , H01J27/04 , H01J37/08 , H01J37/317 , H01J37/32 , H01L21/265 , C23C16/00
CPC分类号： H01J37/32412 , C23C14/48 , H01J37/3233 , H01J2237/026
摘要： A plasma ion implantation apparatus includes a vacuum chamber that receives the object within its walls. The object is supported upon an electrically conductive base that is electrically isolated from the wall of the vacuum chamber. An electrically conductive enclosure is positioned between the object and the wall of the vacuum chamber and supported upon the base. The enclosure is made of an electrically conductive material. A plasma source is positioned so as to create a plasma in the vicinity of the object to be implanted. A voltage source applies an electrical voltage to the base and thence the enclosure relative to the wall of the vacuum chamber. Secondary electrons emitted from the object during implantation are reflected back into the plasma by the enclosure, reducing X-ray production and improving plasma efficiency.
摘要翻译： 等离子体离子注入装置包括在其壁内接收物体的真空室。 该物体被支撑在与真空室的壁电绝缘的导电基底上。 导电外壳位于物体和真空室的壁之间，并被支撑在基座上。 外壳由导电材料制成。 等离子体源被定位成在待植入物体附近产生等离子体。 电压源将电压施加到基座，并且从而将外壳相对于真空室的壁施加电压。 在植入期间从物体发射的二次电子被外壳反射回等离子体，减少X射线产生并提高等离子体效率。
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公开(公告)号：US5330800A
公开(公告)日：1994-07-19
申请号：US971433
申请日：1992-11-04
IPC分类号： C23C14/48 , H01J37/317 , H01J37/32 , H01L21/265 , H01L21/324 , B05D3/06
CPC分类号： H01J37/32412
摘要： A high dose rate, high impedance plasma ion implantation method and apparatus to apply high voltage pulses to a target cathode within an ionization chamber to both sustain a plasma in the gas surrounding the target, and to implant ions from the plasma into the target during at least a portion of each pulse. Operating at voltages in excess of 50 kV that are too high for the reliable formation of a conventional glow discharge, the plasma is instead sustained through a beam-plasma instability interaction between secondary electrons emitted from the target and a background pulsed plasma. The voltage pulses are at least about 50 kV, and preferably 100 kV or more. Pulse durations are preferably less than 8 microseconds, with a frequency in the 50-1,000 Hz range. The preferred gas pressure range is 1.times.10.sup.-4 -1.times.10.sup.-3 Torr; auxiliary electrodes can be used at the lower pressures to provide sufficient seed electrons for initiating a plasma, which is sustained by the beam-plasma instability interaction.
摘要翻译： 一种高剂量率，高阻抗等离子体离子注入方法和装置，用于向电离室内的目标阴极施加高电压脉冲以维持目标周围的气体中的等离子体，并且在时间段期间将离子从等离子体注入靶中 每个脉冲的最小部分。 在超过50kV的电压下工作，对于可靠地形成常规的辉光放电来说太高，等离子体被维持通过从靶发射的二次电子和背景脉冲等离子体之间的束 - 等离子体不稳定性相互作用。 电压脉冲为至少约50kV，优选为100kV以上。 脉冲持续时间优选小于8微秒，频率在50-1,000Hz范围内。 优选的气体压力范围是1×10-4-1×10-3乇; 可以在较低的压力下使用辅助电极以提供充足的种子电子来引发等离子体，其由束 - 等离子体不稳定性相互作用所持续。
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8.发明授权
公开(公告)号：US5455061A
公开(公告)日：1995-10-03
申请号：US372793
申请日：1994-12-23
申请人： Jesse N. Matossian , John J. Vajo
发明人： Jesse N. Matossian , John J. Vajo
摘要： Plasma processing treatment characteristics of an object are determined nondestructively, prior to plasma processing the object, by placing an indicator layer over at least a portion of the plasma processing surface of the object, so as to generally conform to the shape of the surface. An electrically conductive grid is placed over the indicator layer, and made electrically common with the object. The indicator layer is implanted through the conductive grid, and changes properties responsive to the plasma processing treatment. The implanted indicator layer is thereafter analyzed to determine the treatment characteristics of the indicator layer. Plasma processing spatial distribution and total dosage are determined nondestructively from this information and used to establish the plasma processing program for the object and adjust the plasma processing apparatus as needed.
摘要翻译： 通过在对象的等离子体处理表面的至少一部分上设置指示层，以等于对该物体的形状进行等离子体处理，非物理地确定物体的等离子体处理处理特性，从而大体上符合表面的形状。 导电栅格放置在指示层上方，并与物体电气共用。 指示层通过导电栅格植入，并且响应于等离子体处理处理而改变特性。 此后分析植入的指示剂层以确定指示剂层的处理特性。 从该信息非破坏性地确定等离子体处理空间分布和总剂量，并用于建立对象的等离子体处理程序，并根据需要调整等离子体处理装置。
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公开(公告)号：US5374456A
公开(公告)日：1994-12-20
申请号：US995864
申请日：1992-12-23
IPC分类号： B29C35/08 , B29C59/14 , C23C8/36 , C23C14/32 , C23C14/48 , H01J37/317 , H01L21/265 , B05D3/06
CPC分类号： C23C8/36 , B29C59/14 , C23C14/32 , C23C14/48 , B29C2035/0872 , B29C2035/0877
摘要： An object (30) is plasma processed by placing an electrically conducting grid (34) over all or a portion of the surface (32) of the object (30) so that the grid (34) generally follows the contours of the surface (32) but is displaced outwardly from the surface (32). Ions or electrons from a plasma surrounding the object (30) are accelerated into the surface (32) of the object (30) using as a processing driving force an electrical potential applied to the electrically conducting grid (34). The use of a contoured conducting grid (34) allows plasma processing of large, electrically nonconducting objects and objects having sharp surface features or recesses.
摘要翻译： 通过将导电栅格（34）放置在物体（30）的表面（32）的全部或一部分上，使得栅格（34）大致遵循表面（32）的轮廓，等离子体处理物体 ），但是从表面（32）向外移位。 使用作为施加到导电栅极（34）的电位的处理驱动力将来自围绕物体（30）的等离子体的离子或电子加速到物体（30）的表面（32）中。 使用成形的导电栅格（34）允许等离子体处理具有尖锐表面特征或凹陷的大的非导电物体和物体。
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10.发明授权Method and apparatus for plasma processing a workpiece in an enveloping plasma 失效用于在包络等离子体中等离子体处理工件的方法和装置
公开(公告)号：US5859404A
公开(公告)日：1999-01-12
申请号：US543860
申请日：1995-10-12
CPC分类号： H01J37/32 , C23C16/50 , C23C8/36 , H01J2237/336 , H01J2237/338
摘要： A plasma heating apparatus for heating a workpiece includes a chamber of sufficient size to receive a workpiece therein and a source of a reduced gas pressure within the chamber of from about 0.01 to about 100 millitorr. The plasma heating apparatus further includes a plasma source of an enveloping plasma. Optionally, a workpiece voltage may be applied between the workpiece and the wall of the chamber, and a source of a reactive gas can be provided to backfill the chamber, and radiant heaters can be provided to independently heat portions of the workpiece. In operation, the plasma source produces a plasma that surrounds and heats the workpiece. The plasma and the heating of the workpiece are tailored to achieve controllably uniform or nonuniform heat treatment and/or surface treatment of the workpiece. The apparatus can be used to heat treat the workpiece in vacuum, or a reactive gas such as a gaseous source of nitrogen, carbon, or boron can be backfilled into the chamber to alter the surface chemistry of the workpiece.
摘要翻译： 用于加热工件的等离子体加热装置包括具有足够尺寸的腔室以容纳其中的工件，并且室内的减小的气体压力源为约0.01至约100毫托。 等离子体加热装置还包括等离子体的等离子体源。 可选地，可以在工件和室的壁之间施加工件电压，并且可以提供反应气体源来回填室，并且可以提供辐射加热器以独立地加热工件的部分。 在操作中，等离子体源产生围绕并加热工件的等离子体。 工件的等离子体和加热被定制以实现工件的可控均匀或不均匀的热处理和/或表面处理。 该装置可以用于在真空中对工件进行加热处理，或者可以将诸如氮气，碳或硼的气态源的反应气体回填到室中以改变工件的表面化学性质。
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