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    Devices containing carbon nanomaterial electrical interconnects overcoated with metal nitride films and methods for production thereof
    1.
    发明授权
    Devices containing carbon nanomaterial electrical interconnects overcoated with metal nitride films and methods for production thereof 有权
    包含用金属氮化物膜覆盖的碳纳米材料电互连的装置及其生产方法

    公开(公告)号：US08618662B1

    公开(公告)日：2013-12-31

    申请号：US13398771

    申请日：2012-02-16

    申请人： Garo J. Derderian ,  Jonathan W. Ward

    发明人： Garo J. Derderian ,  Jonathan W. Ward

    IPC分类号： H01L21/44

    CPC分类号： H05K3/28 ,  B82Y10/00 ,  B82Y99/00 ,  H01L21/76834 ,  H01L21/76862 ,  H01L23/53276 ,  H01L23/573 ,  H01L29/0669 ,  H01L51/0048 ,  H01L2221/1094 ,  H01L2924/0002 ,  H05K1/09 ,  H01L2924/00

    摘要： Metal nitride coatings containing carbon can be either electrically conductive or substantially non-conductive depending on the degree to which they have been exposed to an oxidative environment. Substantially non-conductive metal nitride coatings can be used as protective layers in electrical devices. Particularly in an electrical device containing carbon nanomaterials, the metal nitride coatings can be used to mask the device's operational characteristics. Such devices can contain an electrical interconnect containing a carbon nanomaterial and a substantially non-conductive coating on the carbon nanomaterial. The substantially non-conductive coating can contain at least one substantially non-conductive metal nitride layer and at least some carbon. Methods for making such devices and metal nitride coatings are also described herein.

    摘要翻译： 包含碳的金属氮化物涂层可以是导电的或基本上不导电的，这取决于它们暴露于氧化环境的程度。 基本上不导电的金属氮化物涂层可用作电气设备中的保护层。 特别是在含有碳纳米材料的电气装置中，金属氮化物涂层可用于掩蔽该装置的操作特性。 这种装置可以包含在碳纳米材料上含有碳纳米材料和基本不导电的涂层的电互连。 基本上不导电的涂层可以包含至少一个基本上不导电的金属氮化物层和至少一些碳。 本文还描述了制造这种装置和金属氮化物涂层的方法。

    High density stacked CNT memory cube arrays with memory selectors
    2.
    发明授权
    High density stacked CNT memory cube arrays with memory selectors 有权
    具有存储器选择器的高密度堆叠CNT存储器立方体阵列

    公开(公告)号：US09159418B1

    公开(公告)日：2015-10-13

    申请号：US13301521

    申请日：2011-11-21

    申请人： Jonathan W. Ward ,  Adrian N. Robinson ,  Garo J. Derderian

    发明人： Jonathan W. Ward ,  Adrian N. Robinson ,  Garo J. Derderian

    IPC分类号： G11C11/00 ,  G11C13/02

    CPC分类号： G11C13/025 ,  G11C13/003 ,  G11C2213/17 ,  G11C2213/33 ,  G11C2213/70 ,  G11C2213/71 ,  G11C2213/76 ,  H01L51/0048 ,  H01L51/0591

    摘要： A three-dimensional (3-D) memory stack and a method of formation thereof are described. The 3-D memory stack includes a number of vertically stacked memory devices. Each memory device includes one or more memory cells. Each of the memory cells can be formed on a conductive material. Each memory device further includes one or more selector elements each configured to couple a memory cell of the one or more memory cells to a respective bit line. None of the selector elements is configured as a diode or a transistor element.

    摘要翻译： 描述三维（3-D）存储器堆栈及其形成方法。 3-D存储器堆叠包括多个垂直堆叠的存储器件。 每个存储器件包括一个或多个存储器单元。 每个存储单元可以形成在导电材料上。 每个存储器件还包括一个或多个选择器元件，每个选择器元件被配置为将一个或多个存储器单元的存储器单元耦合到相应的位线。 没有选择器元件被配置为二极管或晶体管元件。

    Electrical devices containing a carbon nanotube switching layer with a passivation layer disposed thereon and methods for production thereof
    3.
    发明授权
    Electrical devices containing a carbon nanotube switching layer with a passivation layer disposed thereon and methods for production thereof 有权
    包含其上设置有钝化层的碳纳米管切换层的电气装置及其制造方法

    公开(公告)号：US08604459B1

    公开(公告)日：2013-12-10

    申请号：US13491550

    申请日：2012-06-07

    申请人： Jonathan W. Ward ,  Garo J. Derderian

    发明人： Jonathan W. Ward ,  Garo J. Derderian

    IPC分类号： H01L29/06

    CPC分类号： H01L29/0673 ,  B82Y10/00 ,  H01L51/0048 ,  H01L51/0558 ,  H01L51/107

    摘要： Electrical devices containing carbon nanotubes can be passivated to protect the carbon nanotubes from degradation while substantially preserving the carbon nanotubes' electrical conductivity and switching characteristics. Such electrical devices can include a first metal contact, a switching layer containing a plurality of carbon nanotubes disposed on the first metal contact, a passivation layer containing amorphous carbon, a metal carbide, or any combination thereof that is disposed on at least a top surface of the switching layer, and a second metal contact disposed upon the passivation layer. Methods for forming the electrical devices can include disposing a passivation layer containing amorphous carbon on at least a top surface of the switching layer, and optionally heating to at least partially convert the amorphous carbon within the passivation layer into a metal carbide.

    摘要翻译： 可以钝化包含碳纳米管的电子器件以保护碳纳米管免受降解，同时基本上保留碳纳米管的电导率和开关特性。 这样的电气装置可以包括第一金属触点，包含设置在第一金属触点上的多个碳纳米管的开关层，包含无定形碳的钝化层，金属碳化物或其任何组合，其设置在至少一个顶表面 以及设置在钝化层上的第二金属触点。 用于形成电气装置的方法可以包括在开关层的至少顶表面上设置含有无定形碳的钝化层，以及任选地加热至少部分地将钝化层内的无定形碳转化为金属碳化物。

    Two terminal nanotube switch, memory array incorporating the same and method of making
    4.
    发明授权
    Two terminal nanotube switch, memory array incorporating the same and method of making 有权
    两端子纳米管开关，内存阵列及其制作方法

    公开(公告)号：US08253171B1

    公开(公告)日：2012-08-28

    申请号：US12857494

    申请日：2010-08-16

    申请人： Garo J. Derderian ,  Michael J. O'Connor ,  Adrian N. Robinson ,  Jonathan W. Ward

    发明人： Garo J. Derderian ,  Michael J. O'Connor ,  Adrian N. Robinson ,  Jonathan W. Ward

    IPC分类号： H01L27/118

    CPC分类号： B82Y10/00 ,  H01L27/2436 ,  H01L27/2463 ,  H01L29/413 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/149 ,  H01L45/1641

    摘要： A two terminal switching device includes a first conductive terminal, a second conductive terminal in spaced relation to the first terminal, the first terminal encompassed by the second terminal. The device also includes an electrically insulating spacer that encompasses the first terminal and provides the spaced relation between the second terminal and the first terminal. It also includes a nanotube article comprising at least one carbon nanotube, the nanotube article being arranged to overlap at least a portion of each of the first and second terminals. The device also includes a stimulus circuit in electrical communication with at least one of the first and second terminals that is capable of applying a first electrical stimulus to at least one of the first and second terminals to change the resistance of the device between the first and second terminals from a relatively low resistance to a relatively high resistance.

    摘要翻译： 双端开关装置包括第一导电端子，与第一端子间隔开的第二导电端子，由第二端子包围的第一端子。 该装置还包括电绝缘间隔件，其包围第一端子并且提供第二端子和第一端子之间的间隔关系。 其还包括包含至少一个碳纳米管的纳米管制品，所述纳米管制品被布置成与所述第一和第二端子中的每一个的至少一部分重叠。 该装置还包括与第一和第二端子中的至少一个电连通的刺激电路，其能够对第一和第二端子中的至少一个施加第一电刺激，以改变装置在第一和第二端子之间的电阻 第二端子从相对较低的电阻到相对较高的电阻。

    Reconfigurable devices containing carbon nanomaterials and methods for using same
    5.
    发明授权
    Reconfigurable devices containing carbon nanomaterials and methods for using same 有权
    含有碳纳米材料的可重构装置及其使用方法

    公开(公告)号：US08816706B1

    公开(公告)日：2014-08-26

    申请号：US13220592

    申请日：2011-08-29

    申请人： Jonathan W. Ward ,  Brent M. Segal ,  Elwood J. Egerton

    发明人： Jonathan W. Ward ,  Brent M. Segal ,  Elwood J. Egerton

    IPC分类号： G01R27/26 ,  G01N27/00

    CPC分类号： H01L23/57 ,  G06F21/86 ,  H01L2924/0002 ,  H05K1/0275 ,  H05K1/0292 ,  H05K1/0293 ,  H05K1/167 ,  H05K2201/0323 ,  H01L2924/00

    摘要： Methods for using carbon nanomaterials to alter the operational output of a device are described herein. The methods can include providing a device that contains a carbon nanomaterial in a first state, and applying an input stimulus to the carbon nanomaterial so as to change the first state into a second state. In the first state, the carbon nanomaterial can be used to produce a normal operational output of the device, whereas the device can produce an altered operational output when the carbon nanomaterial is in the second state. When producing an altered operational output, the device can continue operating, but the altered operational output can be non-indicative of the true operational state of the device. Devices containing a carbon nanomaterial that can be reconfigured from a normal operational output to an altered operational output are also described herein.

    摘要翻译： 本文描述了使用碳纳米材料来改变设备的操作输出的方法。 所述方法可以包括提供包含处于第一状态的碳纳米材料的装置，以及向碳纳米材料施加输入刺激以将第一状态改变为第二状态。 在第一状态下，碳纳米材料可用于产生器件的正常工作输出，而当碳纳米材料处于第二状态时，器件可以产生改变的工作输出。 当产生改变的操作输出时，设备可以继续操作，但改变的操作输出可以不指示设备的真实操作状态。 本文还描述了包含可从正常操作输出重新配置为改变的操作输出的碳纳米材料的装置。

    Latch circuits and operation circuits having scalable nonvolatile nanotube switches as electronic fuse replacement elements
    8.
    发明授权
    Latch circuits and operation circuits having scalable nonvolatile nanotube switches as electronic fuse replacement elements 有权
    锁存电路和操作电路具有可扩展的非易失性纳米管开关作为电子保险丝更换元件

    公开(公告)号：US08008745B2

    公开(公告)日：2011-08-30

    申请号：US11835583

    申请日：2007-08-08

    申请人： Claude L. Bertin ,  Thomas Rueckes ,  Jonathan W. Ward ,  Frank Guo ,  Steven L. Konsek ,  Mitchell Meinhold

    发明人： Claude L. Bertin ,  Thomas Rueckes ,  Jonathan W. Ward ,  Frank Guo ,  Steven L. Konsek ,  Mitchell Meinhold

    IPC分类号： H01L23/52

    CPC分类号： B82Y10/00 ,  G11C13/025 ,  G11C17/14 ,  G11C17/143 ,  G11C17/16 ,  G11C17/165 ,  G11C17/18 ,  G11C2213/19 ,  H01L23/5256 ,  H01L27/101 ,  H01L27/1052 ,  H01L27/112 ,  H01L27/11206 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/3011 ,  Y10S977/943 ,  H01L2924/00

    摘要： A non-volatile latch circuit is provided. The non-volatile latch circuit includes a nanotube switching element capable of switching between resistance states and non-volatilely retaining the resistance state. The non-volatile latch circuit includes a volatile latch circuit is capable of receiving and volatilely storing a logic state. When the nanotube switching element is a resistance state, the volatile latch circuit retains a corresponding logic state and outputs that corresponding logic state at an output terminal. A non-volatile register file configuration circuit for use with a plurality of non-volatile register files is also provided. The non-volatile register file configuration circuit includes a selection circuitry and a plurality of nanotube fuse elements, each in electrical communication with one of a plurality of non-volatile register files. The selection circuitry is capable of applying electrical stimulus to each of the selected nanotube fuse elements to selectively bypass the corresponding register file.

    摘要翻译： 提供非易失性锁存电路。 非易失性锁存电路包括能够在电阻状态之间切换并且非易失性地保持电阻状态的纳米管开关元件。 非易失性锁存电路包括易失性锁存电路，其能够接收和不稳定地存储逻辑状态。 当纳米管开关元件为电阻状态时，易失性锁存电路保持相应的逻辑状态，并在输出端输出相应的逻辑状态。 还提供了与多个非易失性寄存器文件一起使用的非易失性寄存器文件配置电路。 非易失性寄存器文件配置电路包括选择电路和多个纳米管熔丝元件，每个纳米管熔丝元件与多个非易失性寄存器文件中的一个电气通信。 选择电路能够对每个选定的纳米管熔丝元件施加电刺激以选择性地绕过相应的寄存器文件。

    Carbon nanotube resonators comprising a non-woven fabric of unaligned nanotubes
    9.
    发明授权
    Carbon nanotube resonators comprising a non-woven fabric of unaligned nanotubes 有权
    碳纳米管谐振器包括非对准纳米管的无纺织物

    公开(公告)号：US07965156B2

    公开(公告)日：2011-06-21

    申请号：US12065854

    申请日：2006-09-05

    申请人： Jonathan W. Ward ,  Brent M. Segal

    发明人： Jonathan W. Ward ,  Brent M. Segal

    IPC分类号： H03H9/24 ,  H03H9/00 ,  H03H9/46

    CPC分类号： C09D5/14 ,  A01N37/36 ,  Y10S977/724 ,  Y10S977/742 ,  Y10S977/75 ,  Y10S977/752 ,  Y10S977/932 ,  A01N25/10 ,  A01N37/02 ,  A01N37/04 ,  A01N37/06 ,  A01N37/10 ,  A01N59/16 ,  A01N59/20 ,  A01N2300/00

    摘要： Under one aspect, a resonator 400 includes a nanotube element 410 including a non-woven fabric of unaligned nanotubes and having a thickness, and a support structure 404 defining a gap 406 over which the nanotube element 410 is suspended, the thickness of the nanotube element 410 and the length of the gap 406 being selected to provide a pre-specified resonance frequency for the resonator 400 The resonator 400 also includes a conductive element 412 in electrical contact with the nanotube element 410, a drive electrode 408 in spaced relation to the nanotube element 410, and power logic in electrical contact with die at least one drive electrode 408 The power logic provides a series of electrical pulses at a frequency selected to be about the same as the pre-specified resonance frequency of the resonator 400 to the drive electrode 408 during operation of the resonator 400, such that the nanotube element 410 responds to the series of electrical pulses applied to the drive electrode 408 by making a series of mechanical motions at the resonance frequency of the resonator 400.

    摘要翻译： 在一个方面，谐振器400包括纳米管元件410，纳米管元件410包括非对准纳米管的非织造织物并具有厚度，以及支撑结构404，其限定了纳米管元件410悬挂在其上的间隙406，纳米管元件的厚度 410，并且间隙406的长度被选择为谐振器400提供预定的谐振频率。谐振器400还包括与纳米管元件410电接触的导电元件412，与纳米管相隔离的驱动电极408 元件410以及与裸片至少一个驱动电极408电接触的功率逻辑功率逻辑提供一系列电脉冲，频率选择为与谐振器400的预先指定的谐振频率相对于驱动电极 在谐振器400的操作期间，使得纳米管元件410响应于施加到驱动电极408的一系列电脉冲 在共振器400的共振频率下进行一系列机械运动。

    Devices having vertically-disposed nanofabric articles and methods of making the same
    10.
    发明授权
    Devices having vertically-disposed nanofabric articles and methods of making the same 有权
    具有垂直布置的纳米制品的装置及其制造方法

    公开(公告)号：US07719067B2

    公开(公告)日：2010-05-18

    申请号：US11526364

    申请日：2006-09-25

    申请人： Venkatachalam C. Jaiprakash ,  Jonathan W. Ward ,  Thomas Rueckes ,  Brent M. Segal

    发明人： Venkatachalam C. Jaiprakash ,  Jonathan W. Ward ,  Thomas Rueckes ,  Brent M. Segal

    IPC分类号： H01L27/14

    CPC分类号： G11C23/00 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/16 ,  G11C2213/81 ,  H01H1/0094 ,  H01L21/76838 ,  H01L27/10 ,  Y10S977/724 ,  Y10S977/742 ,  Y10S977/796 ,  Y10S977/856 ,  Y10S977/888 ,  Y10S977/943 ,  Y10T428/24893 ,  Y10T428/24917

    摘要： Electro-mechanical switches and memory cells using vertically-oriented nanofabric articles and methods of making the same. Under one aspect, a nanotube device includes a substantially horizontal substrate having a vertically oriented feature; and a nanotube film substantially conforming to a horizontal feature of the substrate and also to at least the vertically oriented feature. Under another aspect, an electromechanical device includes a structure having a major horizontal surface and a channel formed therein, the channel having first and second wall electrodes defining at least a portion of first and second vertical walls of the channel; first and second nanotube articles vertically suspended in the channel and in spaced relation to a corresponding first and second wall electrode, and electromechanically deflectable in a horizontal direction toward or away from the corresponding first and second wall electrode in response to electrical stimulation.

    摘要翻译： 使用垂直取向的纳米制品的机电开关和存储单元及其制造方法。 在一个方面，纳米管装置包括具有垂直取向特征的基本水平的基底; 以及基本上符合衬底的水平特征以及至少垂直取向的特征的纳米管膜。 在另一方面，机电装置包括具有主要水平表面和形成在其中的通道的结构，所述通道具有限定通道的第一和第二垂直壁的至少一部分的第一和第二壁电极; 垂直悬挂在通道中并且与对应的第一和第二壁电极间隔开的第一和第二纳米管制品，并且响应于电刺激而在水平方向上以机电方式偏向或远离对应的第一和第二壁电极。