公开(公告)号：US08202753B2

公开(公告)日：2012-06-19

申请号：US12877652

申请日：2010-09-08

申请人： Jong Wook Kim ,  Jae Wan Choi ,  Hyun Kyong Cho ,  Jong Ho Na ,  Jun Ho Jang

发明人： Jong Wook Kim ,  Jae Wan Choi ,  Hyun Kyong Cho ,  Jong Ho Na ,  Jun Ho Jang

IPC分类号： H01L21/00

CPC分类号： H01L33/0079 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L33/20

摘要： A light emitting diode (LED) having a vertical structure and a method for fabricating the same. The light emitting diode (LED) having a vertical structure includes a support layer; a first electrode formed on the support layer; a plurality of semiconductor layers formed on the first electrode; a conductive semiconductor layer formed on the plurality of semiconductor layers, and provided with an outer surface having a tilt angle of a designated degree; and a second electrode formed on the conductive semiconductor layer.

摘要翻译： 具有垂直结构的发光二极管（LED）及其制造方法。 具有垂直结构的发光二极管（LED）包括支撑层; 形成在所述支撑层上的第一电极; 形成在所述第一电极上的多个半导体层; 导电半导体层，形成在所述多个半导体层上，并且具有指定度的倾斜角的外表面; 以及形成在导电半导体层上的第二电极。

公开(公告)号：US07812357B2

公开(公告)日：2010-10-12

申请号：US11639430

申请日：2006-12-15

申请人： Jong Wook Kim ,  Jae Wan Choi ,  Hyun Kyong Cho ,  Jong Ho Na ,  Jun Ho Jang

发明人： Jong Wook Kim ,  Jae Wan Choi ,  Hyun Kyong Cho ,  Jong Ho Na ,  Jun Ho Jang

IPC分类号： H01L29/22

CPC分类号： H01L33/0079 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L33/20

摘要： A light emitting diode (LED) having a vertical structure and a method for fabricating the same. The light emitting diode (LED) having a vertical structure includes a support layer; a first electrode formed on the support layer; a plurality of semiconductor layers formed on the first electrode; a conductive semiconductor layer formed on the plurality of semiconductor layer and provided with an outer surface having a tilt angle of a designated degree; and a second electrode formed on the conductive semiconductor layer.

摘要翻译： 具有垂直结构的发光二极管（LED）及其制造方法。 具有垂直结构的发光二极管（LED）包括支撑层; 形成在所述支撑层上的第一电极; 形成在所述第一电极上的多个半导体层; 导电半导体层，形成在所述多个半导体层上，并具有指定度的倾斜角的外表面; 以及形成在导电半导体层上的第二电极。

公开(公告)号：US20070164298A1

公开(公告)日：2007-07-19

申请号：US11639430

申请日：2006-12-15

申请人： Jong Wook Kim ,  Jae Wan Choi ,  Hyun Kyong Cho ,  Jong Ho Na ,  Jun Jang

发明人： Jong Wook Kim ,  Jae Wan Choi ,  Hyun Kyong Cho ,  Jong Ho Na ,  Jun Jang

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L33/20

摘要： A light emitting diode (LED) having a vertical structure and a method for fabricating the same. The light emitting diode (LED) having a vertical structure includes a support layer; a first electrode formed on the support layer; a plurality of semiconductor layers formed on the first electrode; a conductive semiconductor layer formed on the plurality of semiconductor layer and provided with an outer surface having a tilt angel of a designated degree; and a second electrode formed on the conductive semiconductor layer.

摘要翻译： 具有垂直结构的发光二极管（LED）及其制造方法。 具有垂直结构的发光二极管（LED）包括支撑层; 形成在所述支撑层上的第一电极; 形成在所述第一电极上的多个半导体层; 导电半导体层，形成在所述多个半导体层上，并具有指定度的倾斜角的外表面; 以及形成在导电半导体层上的第二电极。

公开(公告)号：US07768025B2

公开(公告)日：2010-08-03

申请号：US11898368

申请日：2007-09-11

申请人： Jun Ho Jang ,  Jae Wan Choi ,  Duk Kyu Bae ,  Hyun Kyong Cho ,  Jong Kook Park ,  Sun Jung Kim ,  Jeong Soo Lee

发明人： Jun Ho Jang ,  Jae Wan Choi ,  Duk Kyu Bae ,  Hyun Kyong Cho ,  Jong Kook Park ,  Sun Jung Kim ,  Jeong Soo Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/405 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0083

摘要： An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.

公开(公告)号：US20070295952A1

公开(公告)日：2007-12-27

申请号：US11708133

申请日：2007-02-20

申请人： Jun Ho Jang ,  Jae Wan Choi ,  Duk Kyu Bae ,  Hyun Kyong Cho ,  Jong Kook Park ,  Sun Jung Kim ,  Jeong Soo Lee

发明人： Jun Ho Jang ,  Jae Wan Choi ,  Duk Kyu Bae ,  Hyun Kyong Cho ,  Jong Kook Park ,  Sun Jung Kim ,  Jeong Soo Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/405 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0083

摘要： An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.

摘要翻译： 具有垂直拓扑结构的LED及其制造方法能够提高发光效率和可靠性，并且还能够实现批量生产。 该方法包括在衬底上形成半导体层; 在所述半导体层上形成第一电极; 在所述第一电极上形成支撑层; 在衬底和半导体层之间的界面处产生声应力波，从而将衬底与半导体层分离; 以及在通过所述衬底的分离而暴露的所述半导体层上形成第二电极。

公开(公告)号：US20120018700A1

公开(公告)日：2012-01-26

申请号：US13219356

申请日：2011-08-26

申请人： Jun Ho Jang ,  Jae Wan Choi ,  Duk Kyu Bae ,  Hyun Kyong Cho ,  Jong Kook Park ,  Sun Jung Kim ,  Jeong Soo Lee

发明人： Jun Ho Jang ,  Jae Wan Choi ,  Duk Kyu Bae ,  Hyun Kyong Cho ,  Jong Kook Park ,  Sun Jung Kim ,  Jeong Soo Lee

IPC分类号： H01L33/04

CPC分类号： H01L33/405 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0083

摘要： An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.

摘要翻译： 具有垂直拓扑结构的LED及其制造方法能够提高发光效率和可靠性，并且还能够实现批量生产。 该方法包括在衬底上形成半导体层; 在所述半导体层上形成第一电极; 在所述第一电极上形成支撑层; 在衬底和半导体层之间的界面处产生声应力波，从而将衬底与半导体层分离; 以及在通过所述衬底的分离而暴露的所述半导体层上形成第二电极。

公开(公告)号：US07834374B2

公开(公告)日：2010-11-16

申请号：US11708133

申请日：2007-02-20

申请人： Jun Ho Jang ,  Jae Wan Choi ,  Duk Kyu Bae ,  Hyun Kyong Cho ,  Jong Kook Park ,  Sun Jung Kim ,  Jeong Soo Lee

发明人： Jun Ho Jang ,  Jae Wan Choi ,  Duk Kyu Bae ,  Hyun Kyong Cho ,  Jong Kook Park ,  Sun Jung Kim ,  Jeong Soo Lee

IPC分类号： H01L33/40 ,  H01L33/44

CPC分类号： H01L33/405 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0083

摘要： An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.

摘要翻译： 具有垂直拓扑结构的LED及其制造方法能够提高发光效率和可靠性，并且还能够实现批量生产。 该方法包括在衬底上形成半导体层; 在所述半导体层上形成第一电极; 在所述第一电极上形成支撑层; 在衬底和半导体层之间的界面处产生声应力波，从而将衬底与半导体层分离; 以及在通过所述衬底的分离而暴露的所述半导体层上形成第二电极。

公开(公告)号：US08624288B2

公开(公告)日：2014-01-07

申请号：US13219356

申请日：2011-08-26

申请人： Jun Ho Jang ,  Jae Wan Choi ,  Duk Kyu Bae ,  Hyun Kyong Cho ,  Jong Kook Park ,  Sun Jung Kim ,  Jeong Soo Lee

发明人： Jun Ho Jang ,  Jae Wan Choi ,  Duk Kyu Bae ,  Hyun Kyong Cho ,  Jong Kook Park ,  Sun Jung Kim ,  Jeong Soo Lee

IPC分类号： H01L33/36 ,  H01L33/44

CPC分类号： H01L33/405 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0083

摘要： An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.

摘要翻译： 具有垂直拓扑结构的LED及其制造方法能够提高发光效率和可靠性，并且还能够实现批量生产。 该方法包括在衬底上形成半导体层; 在所述半导体层上形成第一电极; 在所述第一电极上形成支撑层; 在衬底和半导体层之间的界面处产生声应力波，从而将衬底与半导体层分离; 以及在通过所述衬底的分离而暴露的所述半导体层上形成第二电极。

公开(公告)号：US20110003416A1

公开(公告)日：2011-01-06

申请号：US12880809

申请日：2010-09-13

申请人： Jun Ho JANG ,  Jae Wan Choi ,  Duk Kyu Bae ,  Hyun Kyong Cho ,  Jong Kook Park ,  Sun Jung Kim ,  Jeong Soo Lee

发明人： Jun Ho JANG ,  Jae Wan Choi ,  Duk Kyu Bae ,  Hyun Kyong Cho ,  Jong Kook Park ,  Sun Jung Kim ,  Jeong Soo Lee

IPC分类号： H01L33/30

CPC分类号： H01L33/405 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0083

摘要： An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.

摘要翻译： 具有垂直拓扑结构的LED及其制造方法能够提高发光效率和可靠性，并且还能够实现批量生产。 该方法包括在衬底上形成半导体层; 在所述半导体层上形成第一电极; 在所述第一电极上形成支撑层; 在衬底和半导体层之间的界面处产生声应力波，从而将衬底与半导体层分离; 以及在通过所述衬底的分离而暴露的所述半导体层上形成第二电极。

公开(公告)号：US08039281B2

公开(公告)日：2011-10-18

申请号：US12880809

申请日：2010-09-13

申请人： Jun Ho Jang ,  Jae Wan Choi ,  Duk Kyu Bae ,  Hyun Kyong Cho ,  Jong Kook Park ,  Sun Jung Kim ,  Jeong Soo Lee

发明人： Jun Ho Jang ,  Jae Wan Choi ,  Duk Kyu Bae ,  Hyun Kyong Cho ,  Jong Kook Park ,  Sun Jung Kim ,  Jeong Soo Lee

IPC分类号： H01L33/36

CPC分类号： H01L33/405 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/04 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0083

摘要： An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.

摘要翻译： 具有垂直拓扑结构的LED及其制造方法能够提高发光效率和可靠性，并且还能够实现批量生产。 该方法包括在衬底上形成半导体层; 在所述半导体层上形成第一电极; 在所述第一电极上形成支撑层; 在衬底和半导体层之间的界面处产生声应力波，从而将衬底与半导体层分离; 以及在通过所述衬底的分离而暴露的所述半导体层上形成第二电极。